• Korean Journal of Environmental Agriculture
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• v.6 no.2
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• pp.66-72
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• 1987

Sensitivity of the three freshwater fish, Cyprinus carpio, Oryzias latipes (wildtype indigenous to Korea), and O. latipes (Japanese killifish) to 30 pesticide formulations were studied in terms of 48 hr $LC_{50}$ determined with the static method. The correlation between C. carpio and O. latipes (Japanese killifish) was higher than that between C. carpio and O. latipes with correlation coefficients of 0.89 and 0.80, respectively. The sensitivity of O. latipes and O. latipes (Japanese killifish) to pesticides showed very high correlation with a coefficient of 0.93. Therefore, it is suggested that the acute toxicity data concerning O. latipes (Japanese killifish) could represent those C. carpio or O. latipes which are indigenous species in Korea. Also, it is found that the present protocol for the toxicity test with carp in Korea has difficulties in maintaining the proper concentration of dissolved oxygen in the test chamber because of the abrupt decrease of dissolved oxygen to 2mg/l, which is not acceptable according to general guidelines of foreign countries.

• Journal of Navigation and Port Research
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• v.38 no.5
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• pp.503-509
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• 2014

In this study, a new concept perforated breakwater is proposed, which is having resonant channels. In the channel, perforated plate is installed for dissipating wave energy induced by flow separations. The breakwater has two advantages compared with conventional perforated breakwater having wave chamber with slotted walls. One is easy to control the target wave condition for dissipating wave energy, and the other is having the high structural safety because the structural members are not exposed to impact waves, directly. To evaluate wave reflection characteristics of the proposed breakwater, numerical experiment was carried out by using Galerkin's finite element model based on the linear potential theory. The results indicated that considerable energy dissipation occurs near the resonant period of channel, and wave reflection characteristics are affected by channel shape, location and opening ratio.

• Resources Recycling
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• v.25 no.3
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• pp.49-54
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• 2016

In this study, zircon sand is separated into zirconia and silica by using the Ar-$H_2$ arc plasma refining. And then silica is removed from it by the microwave leaching method to produce a high pure zirconia. Plasma melting consist of two sequential processes; reduction process with Ar gas only followed by refining process with Ar-$H_2$ gas. After cooling in chamber. The solid phase obtained at $240^{\circ}C$ were found to be composed of 20% sulfuric acid solution. The solution was used as a leaching solution with microwave irradiation to obtain a high purity zirconia.

• Journal of the Korean Geosynthetics Society
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• v.3 no.1
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• pp.17-25
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• 2004

A horizontal drain method, which applies vacuum pressure at the end of a horizontal drain for discharging pore water, is used often for improving surface reclaimed clay in the field. In this study, to examine the effectiveness of improving consolidation or shear strength depends by varying vacuum pressure, laboratory chamber horizontal drain test using vacuum pressure is performed and the results is compared with that of self-weight consolidation. The results show that water content reduces with the increase of soil depth in case of self-weight consolidation, while it reduces near the horizontal drain and increases with the increase of the distance from the horizontal drain in case of applying vacuum pressure. The shear strength of dredged soil was improved as well, when the vacuum pressure is applied. The optimized consolidation was achieved at the vacuum pressure range of 30 to 50kPa in the laboratory box test of 50cm wide, considering the range of drain interval in the field was between 0.7 and 1.2m.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.34 no.2
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• pp.11-16
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• 2006

An experimental study of the transonic flows over NACA and double wedge airfoils was conducted with a shock tube. The configuration of test section with a slotted wall and chamber was designed and tested to minimize wall and reflected shock wave effects and use the shock tube as simple and less costly wind tunnel generating the relatively high Reynolds numbers transonic flow. Transonic airfoil flows at hot gas Mach numbers of 0.80~0.84, Reynolds number of about $1.2{\times}10^6$ on airfoil chord length and angles of attack of $0^{\circ}$ and $2^{\circ}$ were visualized with the shadowgraph method. The shock wave profiles on the airfoils were compared with the corresponding results from the conventional transonic wind tunnel tests. The experimental results showed that present shock tube exhibited the proper performance characteristics as transonic wind tunnel for tested Mach number range and airfoils.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.111-111
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• 2007

Further scaling the semiconductor devices down to low dozens of nanometer needs the extremely shallow depth in junction and the intentional counter-doping in the silicon gate. Conventional ion beam ion implantation has some disadvantages and limitations for the future applications. In order to solve them, therefore, plasma source ion implantation technique has been considered as a promising new method for the high throughputs at low energy and the fabrication of the ultra-shallow junctions. In this paper, we study about the effects of DC bias and base pressure as a process parameter. The diluted mixture gas (5% $PH_3/H_2$) was used as a precursor source and chamber is used for vacuum pressure conditions. After ion doping into the Si wafer(100), the samples were annealed via rapid thermal annealing, of which annealed temperature ranges above the $950^{\circ}C$. The junction depth, calculated at dose level of $1{\times}10^{18}/cm^3$, was measured by secondary ion mass spectroscopy(SIMS) and sheet resistance by contact and non-contact mode. Surface morphology of samples was analyzed by scanning electron microscopy. As a result, we could accomplish the process conditions better than in advance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.261-262
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• 2006

High temperature superconducting coated conductor has multi-layer structure of protecting layer/superconducting layer/buffer layer/metallic substrate. The buffer layer consists of multi layer, and the architecture most widely used in RABiTS approach is $CeO_2$(cap layer)/YSZ(diffusion barrier layer)/$CeO_2$(seed layer). Multi-buffer layer deposition required many times and process. Therefore single buffer layer deposition study reduce 2G HTS manufacture efforts. Evaporation technique for single buffer deposition method is used for the $CeO_2$ layer. $CeO_2$ single buffer film could be achieved in the chamber. Detailed deposition conditions (temperature and partial gas pressure of deposition) were investigated for the rapid growth of high quality $CeO_2$ single buffer film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.486-487
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• 2007

$Bi_2Sr_2Ca_{n-1}Cu_nO_x$(n=0, 1, 2) thin films have been fabricated by co-deposition at an ultra-low growth rate using ion beam sputtering(IBS) method. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 phase with temperature and ozone pressure, the substrate temperature was between 655 and $820^{\circ}C$ and the highly condensed ozone gas pressure in vacuum chamber was varied between $2{\times}10^{-6}{\sim}4{\times}10^{-5}$ Torr. Bi 2212 phase appeared in the temperature range of 750 and $795^{\circ}C$ and single phase of Bi 2201 existed in the lower region than $785^{\circ}C$. Whereas, $PO_3$ dependance on structural formation was scarcely observed regardless of the pressure variation.

• Journal of the Korean Vacuum Society
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• v.7 no.2
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• pp.161-168
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• 1998

Reactive ion etching process for InGaAs/InP using the CH4/H2 high density inductively coupled plasma was investigated. The experimental design method proposed by Taguchi was utilized to cover the whole parameter range while maintaining reasonable number of actual experiments. Results showed that the ICP power mainly affects surface roughness and verticality of the sidewall, bias power does etch rate and verticality, CH4 gas concentraion does the verticality and etch rate, and the distance between the induction coil and specimen mostly affects the surface roughness. It was also observed that the chamber pressure is the dominant parameter for the etch rate and verticality of the sidewall. The optimum condition was ICP power 700W, bias power 150 W, 15% $CH_4$, 7.5 mTorr, and 14 cm distance, resulting in about 3 $\mu\textrm{m}$/hr etch rate with smooth surfaces and vertical mesa sidewalls.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.475-475
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• 2010

We have generated Ar plasma in dense plasma focus device with coaxial electrodes for extreme ultraviolet (EUV) lithography and investigated an emitted visible light for electro-optical plasma diagnostics. We have applied an input voltage 4.5 kV to the capacitor bank of 1.53 uF and the diode chamber has been filled with Ar gas of pressure 8 mTorr. The inner surface of the cylindrical cathode has been attatched by an acetal insulator. Also, the anode made of tin metal. If we assumed that the focused plasma regions satisfy the local thermodynamic equilibrium (LTE) conditions, the electron temperature and density of the coaxial plasma focus could be obtained by Stark broadening of optical emission spectroscopy (OES). The Lorentzian profile for emission lines of Ar I of 426.629 nm and Ar II of 487.99 nm were measured with a visible monochromator. And the electron density has been estimated by FWHM (Full Width Half Maximum) of its profile. To find the exact value of FWHM, we observed the instrument line broadening of the monochromator with a Hg-Ar reference lamp. The electron temperature has been calculated using the two relative electron density ratios of the Stark profiles. In case of electron density, it has been observed by the Stark broadening method. This experiment result shows the temporal behavior of the electron temperature and density characteristics for the focused plasma. The EUV emission signal whose wavelength is about 6 ~ 16 nm has been detected by using a photo-detector (AXUV-100 Zr/C, IRD). The result compared the electron temperature and density with the temporal EUV signal. The electron density and temperature were observed to be $10^{16}\;cm^{-3}$ and 20 ~ 30 eV, respectively.