• Bulletin of the Korean Chemical Society
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• 제15권1호
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• pp.64-74
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• 1994

The nonstoichiometric chalcogenides with NaCl-type structure were prepared and the physical and structural properties were studied. The homogeneous range and the structural change were studied based on X-ray powder diffractions using Rietveld-type full-profile fitting technique. Wide homogeneous ranges were observed in Y-S and Y-Se systems, and relatively narrow homogeneous ranges were observed in Yb-S and Yb-Se systems. Both in $Yb_{1-x}S\;and\;Yb_{1-x}Se$, a vacancy ordering transition occurred in (111) plane direction. The ordered superstructure had cubic symmetry(Fm$\bar{3}m) with doubled unit cell "a" parameter compared to the original NaCl-type. The superlattice developed in a continuous second-order transitiion was characterized by the reduced waved vector k= $(a^*+b^*+c^*)/2$. Y-S system had metallic, and YSe, YbSe system had semiconducting properties in their homogeneous ranges. It was observed that the change of electronic transport properties in extended homogeneous range did not depend on the relativeratio of metal to nonmetal, but on the quantities of vacancies.

• Bulletin of the Korean Chemical Society
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• 제19권12호
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• pp.1283-1293
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• 1998

A solid state chemical approach to discover new mateials with enhanced thermoelectric properties is described. The aim is to construct three-dimensional bismuth chalcogenide framework structures which contain tonically interacting alkali or alkaline earth atoms. The alkali atoms tend to have soft "rattling" type phonon modes which result in very low thermal conductivity in these materials. Another desirable feature in this class of compounds is the low crystal symmetry and narrow band-gaps. Several promising materials such as BaBiTe3, KBi6.33S10, K2Bi8S13, β-K2Bi8Se13, K2.5Bi8.5Se14, Ba4Bi6Se13, Eu2Pb2Bi6Se13, Al1+xPb4-2xSb7+xSe15 (A=K, Rb), and CsBi4Te6 are described.

• 청정기술
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• 제29권3호
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• pp.178-184
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• 2023

전이금속 칼코젠화물은 소듐 이차전지의 음극재로서 높은 이론 용량을 가지나 충·방전 과정에서 큰 부피 팽창으로 인해 짧은 수명 특성을 보이며, 낮은 전기전도도로 인해 출력 특성을 저하시킨다는 문제가 있다. 이를 해결하기 위해, 본 연구에서는 분무열분해와 후 열처리 공정을 통해 다공성의 CNT ball과 (Ni,Co)Se₂ 나노결정이 복합된 구조체를 합성하였으며, 이를 소듐 이차전지의 음극에 적용시켜 전기화학적 특성을 평가하였다. 합성된 소재는 분무열분해 동안 Polystyrene(PS) 나노비드의 분해로 인해 다공성 구조를 형성하여 충방전 과정에서 발생하는 부피팽창을 효과적으로 수용하였으며, CNT 소재와의 복합화를 통해 전기화학적 성능을 향상시킬 수 있었다. 이로 인해 다공성 구조의 (Ni,Co)Se₂-CNT 복합소재는 0.2 A g^-1의 전류밀도에서 698 mA h g^-1의 높은 초기 방전용량을 보였으며, 100 사이클 후 400 mA h g^-1의 방전용량을 유지함을 보였다.

• Rapid Communication in Photoscience
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• 제3권4호
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• pp.61-63
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• 2014

3,7-bis(4-(diphenylamino)phenyl)-5-phenyl-5H-benzo[b]phosphinedole 5-sulfide (DBPPS-TPA) and 3,7-bis(4-(diphenylamino)phenyl)-5-phenyl-5H-benzo[b]phosphinedole 5-selenide (DBPPSe-TPA) are newly synthesized D-A-D type molecules based on dibenzophospholes and their physic-chemical properties are studied in comparison with a P=O type compouond, 3,7-bis(4-(diphenylamino)-5-phenyl-5H-benzo[b]phosphinedole 5-oxide (DBPPO-TPA). Fluorescence emission and electrochemical redox properties of these compounds are investigated regarding results of density functional theory (DFT) calculations, X-ray crystallographic structures and UV-vis absorption spectra. These results exhibit systematic variation in optical properties of these compounds having P=O, P=S, and P=Se units. LUMO energy level is systematically modulated with different chalcogenide atoms.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2007년도 춘계학술대회
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• pp.257-260
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• 2007

In this study, $CuInSe_{2}$ (CISe) and $CuInZnSe_{2}$ (CIZSe) thin films were prepared on Corning 1737 glass by radio frequency (RF) magnetron sputtering from binary chalcogenide mixed powder targets. The targets were initially prepared by mixing appropriate weights of CuSe, InSe powder and various ZnSe contents. From the film bulk analysis result, it is observed that Zn concentration in the films increases proportionally with the addition of ZnSe in the sputtering targets. Under optimized conditions, CISe and CIZSe thin films grow as a chalcopyrite structure with strong (112), (220/204) and (312/116) reflections. Films are found to exhibit a high absorption coefficient of $10^{4}$ $cm^{-1}$. An increasing of optical band gap from 1.0 eV (CISe) to 1.25 eV (CIZSe) is found to be proportional with an increasing of Zn concentration as expected. All films have a p-type semiconductor characteristic with a carrier concentration in the order of 1014 $cm^{-3}$, a mobility about $10^{1}$ $cm^{2{\cdot}-1}{\cdot}s^{-1}$ and a resistivity at the range of $10^{2}-10^{6}$ W${\cdot}$m.

• 한국세라믹학회지
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• 제49권1호
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• pp.56-65
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• 2012

Functional materials are often exposed to high temperatures and inherent temperature gradients. These temperature gradients act as thermodynamic driving forces for the diffusion of mobile components. The detailed consequences of thermodiffusion depend on the boundary conditions of the non-isothermal sample: Once the boundaries of the sample are inert and closed for exchange of the mobile components, thermodiffusion leads to their pile-up in the stationary state (the so called Soret effect). Once the system is open for an exchange of the mobile component, chemical diffusion adds to the Soret effect, and stationary non-zero component fluxes are additionally observed in the stationary state. In this review, the essential aspects of thermodiffusion and Soret effect in inorganic functional materials are briefly summarized and our current practical knowledge is reviewed. Major examples include nonstoichiometric binary compounds (oxides and other chalcogenides) and ternary solid solutions. The potential influence of the Soret effect on the long term stability of high temperature thermoelectrics is briefly discussed. Typical Soret coefficients for nonstoichiometric compounds are found to be of the order of (d${\delta}$/dT) ${\approx}$ 1%/K.

• 한국세라믹학회지
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• 제55권5호
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• pp.407-418
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• 2018

Increasing demand for portable and wireless electronic devices with high power and energy densities has inspired global research to investigate, in lieu of scarce rare-earth and expensive ruthenium oxide-like materials, abundant, cheap, easily producible, and chemically stable electrode materials. Several potential electrode materials, including carbon-based materials, metal oxides, metal chalcogenides, layered metal double hydroxides, metal nitrides, metal phosphides, and metal chlorides with above requirements, have been effectively and efficiently applied in electrochemical supercapacitor energy storage devices. The synthesis of self-grown, or in-situ, nanostructured electrode materials using chemical processes is well-known, wherein the base material itself produces the required phase of the product with a unique morphology, high surface area, and moderate electrical conductivity. This comprehensive review provides in-depth information on the use of self-grown electrode materials of different morphologies in electrochemical supercapacitor applications. The present limitations and future prospects, from an industrial application perspectives, of self-grown electrode materials in enhancing energy storage capacity are briefly elaborated.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 춘계학술대회 논문집 디스플레이 광소자 분야
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• pp.92-95
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• 2005

The silver photodoping effect in amorphous AsGeSeS chalcogenide thin films for holographic recording has been investigated using a HeNe laser ($\lambda$=632.8 nm). The chalcogenide films prepared in this work were thinner in comparison with the penetration depth of recording light ($d_p$=1.66 mm). The variation of the diffraction efficiency $(\eta)$ in amorphous chalcogende films exhibits a tendency, independently of the Ag photodoping. That is, n increases relatively rapidly at the beginning of the recording process, reaches the maximum $({\eta}_{max})$ and slowly decreases. In addition, the value of ${\eta}_{max}$ depends strongly on chalcogenide film thickness(d) and its peak among the films with d = 40, 80, 150, 300, and 633 nm is observed at d = 150 nm (approximately 1/2n), where n is refractive index of the chalcogenide (n=2.0). The ${\eta}$ is largely enhanced by Ag photodoping into the chalcogenides. In particular, the value of hmax in a bilayer of 10-nm-thick Ag/150-nm-thick AsGeSeS film is about 1.6%, which corresponds to ~20 times in comparison with that of the AsGeSeS film (without Ag).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.210-213
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• 2004

The phase transition between amorphous and crystalline states in chalcogenide semiconductor films can controlled by electric pulses or pulsed laser beam; hence some chalcogenide semiconductor films can be applied to electrically write/erase nonvolatile memory devices, where the low conductive amorphous state and the high conductive crystalline state are assigned to binary states. Memory switching in chalcogenides is mostly a thermal process, which involves phase transformation from amorphous to crystalline state. The nonvolatile memory cells are composed of a simple sandwich (metal/chalcogenide/metal). It was formed that the threshold voltage depends on thickness, electrode distance, annealing time and temperature, respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.440-440
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• 2012

Nanomaterials have emerged as new building blocks to construct light energy harvesting assemblies. Size dependent properties provide the basis for developing new and effective systems with semiconductor nanoparticles, quantized charging effects in metal nanoparticle or their combinations in 2 and 3 dimensions for expanding the possibility of developing new strategies for photovoltaic system. As top-down approach, we developed a simple and effective method for the large scale formation of self-assembled Cu(In,Ga)$Se_2$ (CIGS) nanostructures by ion beam irradiation. The compositional changes and morphological evolution were observed as a function of the irradiation time. As the ion irradiation time increased, the nano-dots were transformed into a nano-ridge structure due to the difference in the sputtering yields and diffusion rates of each element and the competition between sputtering and diffusion processes during irradiation. As bottom-up approach, we developed the growth of CIGS nanowires using thermal-chemical vapor deposition (CVD) method. Vapor-phase synthesis is probably the most extensively explored approach to the formation of 1D nanostructures such as whiskers, nanorods, and nanowires. However, unlike binary or ternary chalcogenides, the synthesis of quaternary CIGS nanostructures is challenging because of the difficulty in controlling the stoichiometry and phase structure. We introduced a method for synthesis of the single crystalline CIGS nanowires in the form of chalcopyrite using thermal-CVD without catalyst. It was confirmed that the CIGS nanowires are epitaxially grown on a sapphire substrate, having a length ranged from 3 to 100 micrometers and a diameter from 30 to 500 nm.