• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 제38회 하계학술대회
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• pp.1325-1326
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• 2007

We have demonstrated new functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of silver via photo-induced diffusion in thin chalcogenide films is considered. The influence of silver on the properties of the newly formed materials is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Silver saturated is related to the composition of the hosting material. Silver saturated Ge-Ch glasses have been used in the formation of solid electrolyte which is the active medium in programmable metallization cell (PMC) devices. This paper concerns our more recent work on silver-doped germanium selenide electrolytes and describes the electrical characteristics of PMC devices made from these materials following annealing at $300^{\circ}C$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 디스플레이 광소자 분야
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• pp.191-194
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• 2000

In this study, we have investigated the photoinduced birefringence(PB), ${\Delta}n$ in chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin film with a He-Ne Laser at 633nm as In this study, we have investigated the photoinduced birefringence(PB), ${\Delta}n$ in chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin film with a He-Ne Laser at 633nm as a pumping beam and a semiconductor laser at 780nm as a probing beam. The PB for the variable thickness of thin films was investigated. The thickness of the thin films is about $0.4{\mu}m$, $0.92{\mu}m$, $1.4{\mu}m$, $2.0{\mu}m$, respectively. The experimental result of PB in chalcogenide thin films was represented higher PB in the thickness of thin film, $0.92{\mu}m$. It was meant to represent higher PB in the thickness of the film that was made closely the optimal thickness, $0.96{\mu}m$. The optimal thickness of thin film, $0.96{\mu}m$ was calculated by the penetration depth of the pumping light Also, the PB in thickness of $0.92{\mu}m$ was obtained almost two times higher 0.15 than other thickness of thin films.

• 한국세라믹학회지
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• 제52권2호
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• pp.108-113
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• 2015

In an effort to evaluate the practicability of an imprinting technique for amorphous chalcogenide film in Ge-based compositions, we investigate the deformation behavior of the surface of amorphous $GeSe_2$ film deposited via a thermal evaporation route according to varying static loads applied at elevated temperatures. We observe that, under these static loading conditions, crystallization tends to occur on its surface relatively more easily than in As-based $As_2Se_3$ films. As for the present $GeSe_2$ film, higher processing temperatures are required in order to make its surface reflect the given stamp patterns well; however, in this case, its surface becomes partially crystallized in the monoclinic $GeSe_2$ phase. The increased vulnerability of this amorphous $GeSe_2$ film toward surface crystallization under static loading, when compared with the $As_2Se_3$ counterpart, is explained in terms of the topological aspects of its amorphous structure.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1988년도 춘계학술대회 논문집
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• pp.20-23
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• 1988

Effect of light irradiation on evaporated chalcogenide glass films of an As-Se-S-Ge system has been studied. Utiling this characteristics diffraction grating of the amorphous film was obtained. Parameters such as film thickness, composition, and exporsure time influencing the diffraction efficiency were also studied. The maximum value of the diffraction efficiency achieved was 4.6% in an $As_{75}Se_{15}S_{35}-Ge_{10}$ film.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.445-446
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• 2008

In this paper, we investigated the diffraction grating efficiency on Ag-doped amorphous chalcogenide Ag/AsSeS thin film for used to volume hologram. The film thickness was 2 um and diffraction efficiency was obtained from He-Ne (632.8nm) and DPSS(532nm) (P:P) polarized laser beam on Ag/AsSeS thin films. As a result, for the films, the maximum grating diffraction efficiency using He-Ne laser(632nm) is 0.15%[2000sec]. And then The recording speed of DPSS laser was about 40s which of batter than He-Ne lasers.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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• pp.32-33
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• 2006

As next generation nonvolatile memory, chalcogenide-based phase change memory can substitute for a conventional flash memory from its high performance. Also, fast writing speed, low writing voltage, high sensing margin, low power consumption and repetition reliability over $10^{15}$ cycle shows its possibility. At our laboratory, we invented ${Ge_1}{Se_1}{Te_2}$ material to alternate with conventional ${Ge_2}{Sb_2}{Te_5}$ for improve its ability. We respect the ${Ge_1}{Se_1}{Te_2}$ material can be a solution for high power consumption problem and long time at 'set' performance. A conductivity experiment from variable temperature was performed to see reliability of repetition at read and write performance. Compare with conventional ${Ge_2}{Sb_2}{Te_5}$ material, these two materials are used as complex compound to get the finest parameter.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2007년도 추계학술발표대회 및
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• pp.74.1-74.1
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• 2007

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.120-123
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• 2002

In this study it had an excellent optical characteristic, it followed in the creation rate and the refractive index regulation to the ease. Chalcogenide produced the $As_{45}Se_{45}Te_{10}$ thin film and the $MgF_{2}$ thin film. It measured thin film plan simulation, and the thin film has a 1 -dimensional photonic band gap. The chalcogenide $As_{45}Se_{45}Te_{10}$ thin film was measured with the fact that it has a high refractive index (2.6~2.9). The $As_{45}Se_{45}Te_{10}$ and $MgF_{2}$ thin film, have a high refractive index and a low refractive index, it used a simulation and planed period 5-pairs structure, the result was from 500nm to 800nm. It will be able to confirm the characteristic which most of the incidence light reflects, the He-Ne (632.8nm) laser was irradiated in the thin film which stabilized the thin film. $As_{45}Se_{45}Te_{10}$ (high refractive index layer: H) and $MgF_{2}$ (low refractive index layer: L) results which plans the thin film with glass/LHLHLLHLHL/air structure, 632.8nm against transmitance, increased a lot. An application possibility with the filter against a specific wave length was confirmed.

• 한국세라믹학회지
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• 제32권2호
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• pp.239-247
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• 1995

Chalcogenide glasses with compositions of Ge10Se90-xTex(X=0~50 at.%) were prepared in order to investigate the effects of Te substitution on the transmission characteristics of Ge-Se glasses in the 8~12 ${\mu}{\textrm}{m}$ wavelength region. Absorption coefficients were observed to decrease with Te addition, indicating the improved transmission capabilities of Ge-Se-Te glasses as compared to binary Ge-Se glasses. XRD analysis of crystallized glasses suggested the formation of weaker Se-Te and/or Te-Te bonds with addition of Te substituting for Se in stronger Se-Se bonds. Incorporation of Te in excess of 20at% resulted in the formation of hexagonal Te phases when crystallized. It is speculated that the presence of Te-Te bonds with highly metallic bond character resulted in the enhanced crystallization tendencies of glasses. Fromation of Te-rich chains through gradual replacement of Se-Se with Se-Te and/or Te-Te bonds was further supported by decreases in glass transition and crystallization temperatures.

• Rapid Communication in Photoscience
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• 제3권4호
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• pp.61-63
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• 2014

3,7-bis(4-(diphenylamino)phenyl)-5-phenyl-5H-benzo[b]phosphinedole 5-sulfide (DBPPS-TPA) and 3,7-bis(4-(diphenylamino)phenyl)-5-phenyl-5H-benzo[b]phosphinedole 5-selenide (DBPPSe-TPA) are newly synthesized D-A-D type molecules based on dibenzophospholes and their physic-chemical properties are studied in comparison with a P=O type compouond, 3,7-bis(4-(diphenylamino)-5-phenyl-5H-benzo[b]phosphinedole 5-oxide (DBPPO-TPA). Fluorescence emission and electrochemical redox properties of these compounds are investigated regarding results of density functional theory (DFT) calculations, X-ray crystallographic structures and UV-vis absorption spectra. These results exhibit systematic variation in optical properties of these compounds having P=O, P=S, and P=Se units. LUMO energy level is systematically modulated with different chalcogenide atoms.