• Journal of Sensor Science and Technology
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• v.32 no.6
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• pp.391-402
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• 2023

Low-dimensional (zero-dimensional (0-dim), 2-dimensional (2-dim)) nanoparticles, such as chalcogenide compound semiconductors, III-V semiconductors, transition metal dichalcogenides (TMDs), II-VI semiconductors, nanocarbons, hybrid quantum dots (QDs), and perovskite QDs (PQDs), for which blue light emission has been observed, are reviewed. Current synthesis and device fabrication technologies as well as their prospective applications on next-generation quantum-dot-based light-emitting diodes are discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.112-113
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• 2006

In this paper. we investigated a characteristic of holographic grating data erasure with non-polarized beam at amorphous chalcogenide As-Ge-Se-S thin film. A sample of holographic grating data was formed with DPSS laser for setup. Then, the erasure process was performed with He-Ne laser vertically at sample. As-Ge-Se-S(single layer). Ag/As-Ge-Se-S(double layer) and As-Ge-Se-S/Ag/As-Ge-Se-S(multi-layer) are manufactured to compare their characteristic of erasure.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1430-1431
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• 2006

We investigated the formation of 2-dimension hologram grating by means of selective etching characteristic and photo-expansion effect according to photo irradiation on amorphous As-Ge-Se-S thin film. By method of phase holography, we made the 2-dimensional hologram grating by each (S:P) and ($+45^{\circ}:-45^{\circ}$) polarized beam with DPSS laser(532nm) and He-Ne laser(632nm). A recording property was observed at each polarized beam through 2-dimensional hologram surface relief grating. Chalcogenide thin film was etched selectively by NaOH solution after the formation of 1-dimensional diffraction grating. And then etched sample was rotated 90 degree to fabricate 2 dimensional hologram grating. We found that it was observed the formation of 2-dimensional hologram grating by AFM(Atomic Force Microscopy).

• Bulletin of the Korean Chemical Society
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• v.19 no.12
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• pp.1283-1293
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• 1998

A solid state chemical approach to discover new mateials with enhanced thermoelectric properties is described. The aim is to construct three-dimensional bismuth chalcogenide framework structures which contain tonically interacting alkali or alkaline earth atoms. The alkali atoms tend to have soft "rattling" type phonon modes which result in very low thermal conductivity in these materials. Another desirable feature in this class of compounds is the low crystal symmetry and narrow band-gaps. Several promising materials such as BaBiTe3, KBi6.33S10, K2Bi8S13, β-K2Bi8Se13, K2.5Bi8.5Se14, Ba4Bi6Se13, Eu2Pb2Bi6Se13, Al1+xPb4-2xSb7+xSe15 (A=K, Rb), and CsBi4Te6 are described.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.191-192
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• 2008

For phase transition method, good record sensitivity, low heat radiation, fast crystallization and hi-resolution are essential. Also, a retention time is very important part for phase-transition. In our past papers, we chose composition of $Ge_1Se_1Te_2$ material to use a Se factor which has good optical sensitivity than conventional Sb. Ge-Se-Te and Ag/$Ge_1Se_1Te_2$ samples are fabricated and irradiated with He-Ne laser and DPSS laser to investigate a reversible phase change by light. Because of Ag ions, the Ag layer inserted sample showed better performance than conventional one. We should note that this novel one showed another possibility for phase-change random access memory.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1500-1502
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• 2000

In this study, we have investigated the photoinduced anisotropy (PA) phenomena by the assisted. electric field effect on $As_{40}Ge_{10}Se_{15}S_{35}$ thin films. Investigation of photoinduced anisotropy on the assisted electric field effect was carried out using a He-Ne laser beams (inducing and probing beams) illuminating the same area of the thin film. To investigate the effect of electric field, various bias voltages applied. The result is shown the photoinduced anisotropy dependence on electric field. Also. we obtained the property of photoinduced anisotropy in the electric field effects by various voltages.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1861-1863
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• 1999

The polarization gratings were fabricated in chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin film applicable to a medium of the polarization holography and their diffraction efficiencies$(\eta)$ were monitored by real-time measurement. The polarization gratings prepared consisted of the multi-layer thin film system. As a method to improve the $\eta$, we have investigated its change for the field effect. As the results, the value of $\eta$ strongly depended on the voltage applied to the film and the maximum value, $\eta_{max}$ was enhanced to be about 4 times in comparison with that of not biased sample. In addition, an increase in the $\eta$ can be estimated to be due to additional creation of new defects caused by the electric field across the film.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1329-1330
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• 2007

Phase-change random access memory(PRAM) has many advantages compare with the existing memory. For example, fast programming speed, low programming voltage, high sensing margin, low power consume and long cyclability of read/write. Though it has many advantages, there are some points which must be improved. So, we invented and studied new constitution of $Ge_{1}Se_{1}Te_{2}$ chalcogenide material. Actually, the performance properties have been improved surprisingly. However, crystallization time was as long as ever for amorphization time. In this paper, we studied in order to make set operation time and reset operation voltage reduced. In the present work, by alloying Sb in $Ge_{1}Se_{1}Te_{2}$. we could confirm that improved its set operation time and reset operation voltage. As a result, the method of Sb-alloyed $Ge_{1}Se_{1}Te_{2}$ can be solution to decrease the set operation time and reset operation voltage.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.590-593
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• 2004

본 논문에서는 $As_{40}Ge_{10}Se_{15}S_{35}$ (300nm)박막과 $As_{40}Ge_{10}Se_{15}S_{35}$ (300nm)/Ag(20nm)박막에 홀로그래피 격자를 형성시킨 후 Tg 온도$(240^{\circ}C)$를 기준으로 하여 유리질 천이온도(Tg) 온도 이하 $(190^{\circ}C)$와 이상$(270^{\circ}C)$에서 열처리 시킨 후의 회절효율 변화를 알아보았다. $As_{40}Ge_{10}Se_{15}S_{35}$ (300nm) 박막의 경우 $190^{\circ}C$ : 50%, $240^{\circ}C$ : 약80%, $270^{\circ}C$ : 약 98%의 회절효율 감소가 일어났으며 $As_{40}Ge_{10}Se_{15}S_{35}$(300nm)/Ag(20nm)박막에서는 Tg 온도 이하 즉 $190^{\circ}C$, $240^{\circ}C$ 에서는 회절효율의 변화가 없었으나 Tg온도 이상인 $270^{\circ}C$에서는 약 1.5배 증가한 회절효율을 나타내었다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.3 no.2
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• pp.140-148
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• 1993

In this study, the electrical and optical properties of amorphous, crystallization and thin film of As-Ge-Se Chalcogenide System was investigated. Typical composition of this material has $As_{20~50}Se_{40~70} and Ge_{10~40}$ at%. Materials having Se was fixed to 40 at% and As was above 30 at% much more increased the electrical conductivity. After crystallization at the temperature of $476^{\circ}C$ for 3 hour was showed the best electrical conductivity of 1.74E-13$(\Omega cm)^{-l}$. And the main crystalline phase of this sample can be investigated using the mixed crystalline, i.e, $GeSe_2 and As_2Se_3$ phases. The thin film shows the optical absorption coefficient in the range $2{times}10^3 to 7{times}10^4$ and the optical energy gap of 1.85eV.