• Journal of the Korean Ceramic Society
• /
• v.54 no.6
• /
• pp.484-491
• /
• 2017

Chalcogenide glasses have been investigated in their thermodynamic, structural, and optical properties for application in various opto-electronic devices. In this study, the $Sb_{20}Se_{80-x}Ge_x$ with x = 10, 15, 20, and 25 were selected to investigate the glass stability according to germanium ratios. The thermal, structural, and optical properties of these glasses were measured by differential scanning calorimetry (DSC), X-ray diffraction (XRD), and UV-Vis-IR Spectrophotometry, respectively. The DSC results revealed that $Ge_{20}Sb_{20}Se_{60}$ composition showing the best glass stability theoretically results due to a lower glass transition activation energy of 230 kJ/mol and higher crystallization activation energy of 260 kJ/mol. The structural and optical analyses of annealed thin films were carried out. The XRD analysis reveals obvious results associated with glass stabilities. The values of slope U, derived from optical analysis, offered information on the atomic and electronic configuration in Urbach tails, associated with the glass stability.

• Proceedings of the KIEE Conference
• /
• 2007.07a
• /
• pp.1325-1326
• /
• 2007

We have demonstrated new functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of silver via photo-induced diffusion in thin chalcogenide films is considered. The influence of silver on the properties of the newly formed materials is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Silver saturated is related to the composition of the hosting material. Silver saturated Ge-Ch glasses have been used in the formation of solid electrolyte which is the active medium in programmable metallization cell (PMC) devices. This paper concerns our more recent work on silver-doped germanium selenide electrolytes and describes the electrical characteristics of PMC devices made from these materials following annealing at $300^{\circ}C$.

• Electrical & Electronic Materials
• /
• v.6 no.2
• /
• pp.175-183
• /
• 1993

Amorphous Semicondyctor로서 Chalcogenide계의 Ge-Se-Bi계 비정질화와 결정화 실험을 통하여 전기전도도를 평가코자 하였다. 시료의 조성범위는 G $e_{15-25}$S $e_{65-85}$B $i_{2.5-15B}$의 범위에서 5N의 Ge, Se, Bi metal분말을 사용하였다. 시료는 석영관에 진공 장입후 용융시켜 비정질화 하였다. 이때 열처리 조건은 1000.deg.C에서 10시간 동안 가열하였으며 급냉 조건은 3834.deg.C/sec로 처리하였다. 비정질 sample의 결정화는 결정핵을 형성 시킨 후 온도 변화 및 시간의 변화를 주면서 결정을 성장시켰으며 이때 B $i_{2}$S $e_{3}$와 GeS $e_{2}$ 결정상을 관찰 할 수 있었다. 박막화는 위의 실험에 사용된 Bulk sample을 사용하여 박막을 제작하였으며 유리화 영역은 Ge 15 at%, Se 70 at% 이상, Bi가 10 at% 이하일 때 비정질화가 용이하였다. Bulk의 경우 Ge를 20 at%로 고정시 Bi의 at% 함량이 증가함에 따라 전기전도도가 증가했으며 Bi가 7.5 at%이상일때 급격한 전도도의 증가를 가져왔다. 박막의 경우엔 Bulk sample보다 Bi의 함량이 증가시 더욱 큰 전도도의 증가를 가져왔다. G $e_{20}$S $e_{77.5}$B $i_{2.5}$ 저성의 결정화 경우 330.deg.C에서 4hr 유지시킨 경우가 가장 양호하였다.다.하였다.다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.04b
• /
• pp.81-84
• /
• 2002

The chalcogenide glasses of thin films have the superior property of photoinduced anisotrophy(PA). In this study, we observed the linear dichroism(D) using the irradiation with polarized He-Ne laser light, in the $Ag/As_{10}Ge_{10}Se_{15}S_{35}$ multi-layer. Mutilayer structures formed by alternating metal(Ag) and chalcogenide($As_{10}Ge_{10}Se_{15}S_{35}$). The Ag polarized photodoping result in reducing time of saturation anisotrophy and increasing sensitivity of linearly anisotrophy intensity, up to maximum 220%. In the thin films of chalcogenide, the Ag polarized photodoping will be show a capability of new method that suggested more improvement of photoinduced anisotrophy property.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.16 no.2
• /
• pp.144-150
• /
• 2003

The chalcogenide glasses of thin films have the superior property of photoinduced anisotrophy(PA). In this study, we observed the linear dichroism using the irradiation with Polarized He-Ne laser light in the Ag/As$_{40}$ Ge$_{10}$Se$_{15}$ S$_{35}$ multi-layer. Multilayer structures were formed by alternating metal(Ag) and chalcogenide(As$_{40}$ Ge$_{10}$Se$_{15}$ S$_{35}$) thin film. The Ag Polarized photodoping result in reducing the time of saturation anisotropy and increasing the sensitivity of linearly anisotropy intensity As the results, the Ag polarized photodoping will be have a capability of new method that suggests more improvement of photoinduced anisotropy property in the thin films of chalcogenide.ogenide.ide.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2010.06a
• /
• pp.167-167
• /
• 2010

Ge-Sb-Se계 칼코게나이드 유리의 Melting 조건변화에 따른 특성변화를 연구하였다. Glass melting 조건(homogenization-temperature, homogenization-time, annealing) 에 따라 제작된 칼코게나이드 유리 bulk를 FT-IR, XRD, SEM 등의 분석장비를 이용하여 특성을 분석하였다. Homogenization temperature가 높을수록 석영관 급냉 시 발생되는 mechanical stress와 내부응력차로 인해 칼코게나이드 유리 깨짐현상이 증가하였으며 조성비와 melting 조건에 따라 XRD분석에서 확인되지 않는 미소결정이 SEM 분석결과 관찰되었다. 본 연구를 통해 칼코게나이드 유리의 melting 조건에 따른 경향성을 확인할 수 있었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.11b
• /
• pp.362-365
• /
• 2001

The chalcogenide glasses of thin films have the superior property of photoinduced anisotrophy(PA). In this study, we observed the linear dichroism(D) using the irradiation with polarized He-Ne laser light, in the $Ag/As_{40}Ge_{10}Se_{15}S_{35}$ multi-layer. Mutilayer structures formed by alternating metal(Ag) a chalcogenide$(As_{40}Ge_{10}Se_{15}S_{35})$. Such multilayer structures have a greater sensitivity to illumination am larger dichroism in comparison the conventional double layer structure. Also new phenomena are discovered. These results will be show a capability of new method that suggested more improvement of photoinduced anisotropy property.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.11a
• /
• pp.362-365
• /
• 2001

The chalcogenide glasses of thin films have the superior property of photoinduced anisotrophy(PA). In this study, we observed the linear dichroism(D) using the irradiation with polarized He-Ne laser light, in the Ag/As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/ multi-layer. Mutilayer structures farmed by alternating metal(Ag) a chalcogenide(As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/). Such multilayer structures have a greater sensitivity to illumination and larger dichroism in comparison the conventional double layer structure. Also new phenomena are discovered. These results will be show a capability of new method that suggested more improvement of photoinduced anisotropy property.

• Proceedings of the KIEE Conference
• /
• 1993.07b
• /
• pp.1259-1261
• /
• 1993

Amorphous chalcogenide glasses are highly transparent in the near $1{\mu}m$ wavelength region, which corresponds to the wavelength region of the optical communication system. Optical properties of these materials, including the transmittance, the optical gap, and the shift associated with reversible photostruction change, were measured. Thereafter, optical waveguide was fabricated by the laser lithographic technique and then, guide modes were measured by utilizing the end-fire coupling technique. The field patterns of both the single mode and the multimode waveguide were observed.

• Journal of the Korean Ceramic Society
• /
• v.33 no.4
• /
• pp.425-431
• /
• 1996