• 제목/요약/키워드: ceramic thin-film pressure sensor

검색결과 14건 처리시간 0.019초

PLD법을 이용한 Buffer Layer 증착온도에 따른 As-doped ZnO 박막의 특성 (Characteristics of As-doped ZnO thin films with various buffer layer temperatures prepared by PLD method)

  • 이홍찬;심광보;오영제
    • 센서학회지
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    • 제15권2호
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    • pp.84-89
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    • 2006
  • Highly concentrated p-type ZnO thin films can be obtained by doping of N, P and As elements. In this study, undoped ZnO buffer layers were prepared on a (0001) sapphire substrate by a ultra high vaccum pulsed laser deposition(UHV-PLD) method. ZnO buffer layers were deposited with various deposition temperature($400{\sim}700^{\circ}C$) at 350 mtorr of oxygen working pressure. Arsenic doped(1 wt%) ZnO thin films were deposited on the ZnO buffer layers by UHV-PLD. Crystallinity of the samples were evaluated by X-ray diffractometer and scanning electron microscopy. Optical, electrical properties of the ZnO thin films were estimated by photoluminescence(PL) and Hall measurements. The optimal condition of the undoped ZnO buffer layer for the deposition of As-doped ZnO thin films was at $600^{\circ}C$ of deposition temperature.

Rf-magnetron sputtering 방법으로 Li-Nb-K-O 세라믹 타겟을 사용하여 제작한 $\textrm{LiNbO}_3$박막의 제작 및 전기적 특성 (Fabrication and Electric Properties of $\textrm{LiNbO}_3$ Thin Film by an Rf-magnetron Sputtering Technique Li-Nb-K-O Ceramic Target)

  • 박성근;백민수;배승춘;권성열;김광태;김기완
    • 한국재료학회지
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    • 제9권2호
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    • pp.163-167
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    • 1999
  • LiNbO$_3$films were prepared by an rf-magnetron sputtering technique using sintered target containing potassium. The potassium was included to help to fabricate stoichiometric LiNbO$_3$film. Structural and electrical properties of thin films was investigated as a function of deposition condition. Optimum sputtering conditions were rf power of 100W, working pressure of 1m Torr and substrate temperature of 58$0^{\circ}C$. The thin film was grown to (012) preferred orientation. The dielectric constant of the thin film LiNbo$_3$ fabricated under optimum condition was 55 at 1MHz. Average grain size is about 200$\AA$ and roughness of the film is small enough to apply to optic devices.

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3차원 LTCC 기판을 이용한 압전 압력 센서의 제작 및 연구 특성

  • 허원영;황현석;우형관;이태용;이경천;심등;송준태
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 추계학술대회 논문집
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    • pp.118-118
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    • 2009
  • Low temperature co-fired ceramic (LTCC) is one of promising materials for MEMS structures because it has very good electrical and mechanical properties as well as possibility of making various three dimensional (3D) structures. In this work, piezoelectric pressure sensors based on hybrid LTCC technology were presented. The LTCC diaphragms with thickness of 400 um were fabricated by laminating 12 green tapes which consist of alumina and glass particle in an organic binder. The piezoelectric sensing layer consists of $Pb(ZrTi)O_3$ (PZT) thin film deposited by RF magnetron sputtering method on between top and bottom Au electrodes. The results showed that the fabrication method is very suitable for pressure sensor applications. The PZT films deposited on LTCC diaphragms were successfully grown and were analyzed by using X-ray diffraction method (XRD) and field emission scanning electron microscope (FESEM).

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LTCC 기판을 이용한 PZT 압력 센서의 제작 및 특성 연구

  • 허원영;황현석;이태용;이경천;송준태
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2010년도 춘계학술대회 논문집
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    • pp.13-13
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    • 2010
  • Piezoelectric sensors are extensively used to measure force because of their high sensitivity and low cost. however, the development of device with reduced size but with improved sensitivity is highly important. Low-temperature co-fired ceramic (LTCC) is one of promising materials for this application than a silicon substrate because it has very good electrical and mechanical properties as well as possibility of making various three dimensional (3D) structures. In this work, piezoelectric pressure sensors based on hybrid LTCC technology were presented. The LTCC diaphragms with thickness of $400\;{\mu}m$ were fabricated by laminating 12 green tapes which consist of alumina and glass particle in an organic binder. The piezoelectric sensing layer consists of PZT thin film deposited by RF magnetron sputtering method on between top and bottom Au electrodes. The PZT films deposited on LTCC diaphragms were successfully grown and were analyzed by using X-ray diffraction method (XRD) and field emission scanning electron microscope (FESEM).

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