• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.325-325
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• 2010

최근 결정질 실리콘 태양전지 분야에서는 태양전지의 Voc와 Isc의 증가를 통한 효율 향상을 목적으로 후면 passivation에 대한 연구가 활발하게 진행되고 있다. Local-Back Contact은 최적화된 후면 passivation 박막을 이용한 태양전지 제조방법이다. 고효율 태양전지 개발을 위해 최적의 laser 가공 조건이 확립되어야 한다. 본 연구에서는 고효율의 LBC 태양전지 개발을 위해 ONO 구조의 후면 passivation 박막에 laser ablation 조건을 가변하여 LBC 태양전지를 제작하고 그 특성을 분석하였다. 본 연구에 사용된 laser는 355nm 파장을 갖는 UV laser를 사용하였다. laser 파워는 5W, 주파수는 30kHz로 하였을 때 폭 20um, 깊이 5um의 홀을 형성시킬 수 있었다. 후면 접촉 면적의 영향을 확인하기 위하여 laser ablation 간격을 300um, 500um, 700um으로 가변하여 공정을 진행하였다. 태양전지 제조 결과 spacing 300um일 경우 효율이 높게 측정되었으며, laser ablation의 데미지를 줄이기 위한 FGA 처리시 웨이퍼 표면의 데미지를 줄여 carrier lifetime 향상에 기여하는 것을 확인할 수 있었다. 본 연구의 결과를 이용하여 향후 후면 passivation 극대화 및 접촉면적 가변을 통한 고효율 LBC 태양전지 개발이 가능할 것으로 판단된다.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.2
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• pp.49-53
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• 2018

Recently, technologies for integrating various devices such as a flexible device, a transparent device, and a MEMS device have been developed. The key processes of heterogeneous device manufacturing technology are chip or wafer-level bonding process, substrate grinding process, and thin substrate handling process. In this study, the effect of Si substrate grinding process on the electrical properties of tin oxide thin films applied as transparent thin film transistor or flexible electrode material was investigated. As the Si substrate thickness became thinner, the Si d-spacing decreased and strains occurred in the Si lattice. Also, as the Si substrate thickness became thinner, the electric conductivity of tin oxide thin film decreased due to the lower carrier concentration. In the case of the thinner tin oxide thin film, the electrical conductivity was lower than that of the thicker tin oxide thin film and did not change much by the thickness of Si substrate.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.6
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• pp.240-245
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• 2011

This research focused on the intercalation behavior of recrystallized ibuprofen into clay as a sustained release drug carrier. The intercalation behaviors of ibuprofen were determined by X-ray diffraction (XRD) and thermogravimetric analysis (TGA). The basal spacing ($d_{001}$) of clay increased from 1.2 nm to 1.5 nm by ibuprofen molecules. The segmental motion effect of ibuprofen into the clay interlayer spacing also increased the thermal stability of the ibuprofen/clay nanocomposites. The in vitro drug release results of nanocomposites showed that ibuprofen was released from clay steadily.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.1
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• pp.67-74
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• 2009

In this paper, we investigate the performance limitations of SubCarrier Multiplexed(SCM) WDM systems using optical Double-Side Band(DSB) modulated 16 QAM signals. The Bit-Error Rate(BER) performance is evaluated under various optical transmission links including the effects of the dispersion and fiber nonlinearities such as SPM(Self-Phase Modulation) and XPM(cross-phase modulation). After simulation of SCM-WDM systems, the dominant factors determining the entire system performance are appeared to be the nonlinearity of MZ(Mach-Zehnder) modulator and the SCM channel spacing. The BER performance of subcarrier channels in the higher frequencies was degraded with the large dispersion effect only, however, the performance was improved a little with a combined effect of fiber dispersion and nonlinear effect when the hish fiber launching power was applied.

• Korean Journal of Optics and Photonics
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• v.11 no.1
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• pp.37-42
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• 2000

We have numerically solved rate-equations of semiconductor optical amplifier (SOA) to understand the characteristics of SOA. The rate-equations we have used can describe injection carrier density, amplified spontaneous emission and signal photon density in spatial and time domain by dividing the cavity into multi-section. We have investigated injection carrier density, amplified spontaneous emission and signal photon density as a function of position and time in the case of single channel input in the form of square pulse. Also we have analyzed the non-linear phenomena of SOA in the case of injecting multi-channel wavelengths as in WDM. Intermodulation distortion (IMD) caused by beat among channels has significant effects on the signal distortion as the channel spacing becomes narrower, and channel crosstalk becomes larger as the power of signals increases. In the case of the injection of another CW laser whose wavelength is far enough from the signal wavelengths, the crosstalk and the output signal distortion can be significantly reduced. duced.

• International Journal of Computer Science & Network Security
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• v.23 no.7
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• pp.1-8
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• 2023

An Orthogonal Frequency Division Multiplexing (OFDM) based wireless communication system has drawn wide attention for its high transmission rate and high spectrum efficiency in not only radio but also Underwater Acoustic (UWA) applications. Because of the narrow sub-carrier spacing of OFDM, orthogonality between sub-carriers is easily affected by Doppler effect caused by the movement of transmitter or receiver. Previously, Doppler compensation signal processing algorithm for Desired propagation path was proposed. However, other Doppler shifts caused by delayed Undesired signal arriving from different directions cannot be perfectly compensated. Then Receiver Bit Error Rate (BER) is degraded by Inter-Carrier-Interference (ICI) caused in the case of Multi-path Doppler channel. To mitigate the ICI effect, a modified Delay and Doppler Profiler (mDDP), which estimates not only attenuation, relative delay and Doppler shift but also sampling clock shift of each multi-path component, is proposed. Based on the outputs of mDDP, an ICI canceling multi-tap equalizer is also proposed. Computer simulated performances of one-tap equalizer with the conventional Time domain linear interpolated Channel Transfer Function (CTF) estimator, multi-tap equalizer based on mDDP are compared. According to the simulation results, BER improvement has been observed. Especially, in the condition of 16QAM modulation, transmitting vessel speed of 6m/s, two-path multipath channel with direct path and ocean surface reflection path; more than one order of magnitude BER reduction has been observed at CNR=30dB.

• Journal of electromagnetic engineering and science
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• v.9 no.3
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• pp.152-158
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• 2009

We have developed a novel digital feedback predistortion(DFBPD) linearization based on RF feedback PD for the wide bandwidth modulated signals. The wideband PD operation is carried out by combining the DFBPD and memory lookup table(LUT). To experimentally demonstrate the linearization performance of the proposed PD technique for wideband signal, a class-AB amplifier using an LDMOSFET MRF6S23140 with 140-W peak envelope power is employed at 2.345 GHz. For a forward-link 2FA wideband code-division multiple-access signal with 10 MHz carrier spacing, the proposed DFBPD with memory LUT delivers the adjacent channel leakage ratio at an 10 MHz offset of -56.8 dBc, while those of the amplifier with and without DFBPD are -43.2 dBc and -41.9 dBc, respectively, at an average output power of 40 dBm. The experimental result shows that the new DFBPD with memory LUT provides a good linearization performance for the signal with wide bandwidth.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.587-587
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• 2012

Supercapacitors, which can deliver significant energy with high power density, have attracted a lot of attention due to their potential application in energy storage. Among various oxide materials, sodium vanadate has been recognized as one of the most promising electrode materials because of high electrical conductivity. In addition, larger layer spacing of ${\beta}$-Na0.33V2O5 compared to V2O5 makes easier Li+ insertion. Moreover, ${\beta}$-Na0.33V2O5 has a tunnel like structure along b axis with 3 kinds of V site allowing it to enhance the ion intercalation by introducing three different intercalation sites along the tunnel. The tunnel can act as a fast diffusion path for ion diffusion, which can improve the overall charge storage kinetics. In this study, high quality single crystalline sodium vanadate (${\beta}$-Na0.33V2O5) nanowires were grown directly on Pt coated $SiO_2$ substrate by a facile chemical solution deposition method without employing catalyst, surfactant or carrier gas. The results show that great enhancement in capacitance was observed compared with previous reports.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.122-122
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• 2010

ZnO is a widely investigated material for the blue and ultraviolet solid-state emitters and detectors. It has been promoted due to a wide-band gap semiconductor which has large exciton binding energy of 60 meV, chemical stability and low radiation damage. However, there are many problems to be solved for the growth of p-type ZnO for practical device applications. Many researchers have made an efforts to achieve p-type conductivity using group-V element of N, P, As, and Sb. In this letter, we have studied the optical characteristics of the antimony-doped ZnO (ZnO:Sb) thin films by means of photoluminescence (PL), PL excitation, temperature-dependent PL, and time-resolved PL techniques. We observed donor-to-acceptor-pair transition at about 3.24 eV with its phonon replicas with a periodic spacing of about 72 meV in the PL spectra of antimony-doped ZnO (ZnO:Sb) thin films at 12 K. We also investigate thermal activation energy and carrier recombination lifetime for the samples. Our result reflects that the antimony doping can generate shallow acceptor states, leading to a good p-type conductivity in ZnO.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.7
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• pp.7-14
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• 2009

In this paper, the effects of annealing conditions on the structural ((002) intensity, FWHM, d-spacing, grain size, (002) peak position), optical (UV peak, UV peak position) and electrical properties (carrier concentrations, resistivity, mobility) of ZnO films were investigated. ZnO films were deposited onto SiO$_2$/si substrates by RF magnetron sputtering from a ZnO target. The substrate was not heated during deposition. ZnO films were annealed in temperature ranges of $500\sim650^{\circ}C$ in the O$_2$ flow for 5$\sim$20 min. The film average thicknesses were in the range of 291 nm. The surface morphologies and structures of the samples were characterize by SEM and XRD, respectively. The optical properties were evaluated by photoluminescence (PL) measurement at room temperature (RT) using a He-Cd 325 nm laser. As the annealing temperature and time vary, the following relations were also observed: (1) proportional relationships among UV intensity (002) intensity, and grain size exist, (2) UV intensity is inversely proportional to FWHM, (3) there is no special relationship between UV intensity and electron carrier concentrations, (4) d-spacing is inversely proportional to (002) peak position, (5) UV peak position in the range of 3.20$\sim$3.24 eV means that ZnO films have a n-type conductivity which was consistent with that obtained from the electrical property, (6) the optimal conditions for the best optical and structural characteristics were found to be oxygen fraction, (O$_2$/(O$_2$+Ar)) of 0.2, RF power of 240W, substrate temperature of RT, annealing condition of 600$^{\circ}C$ for 20 min, and sputtering pressure of 20 mTorr.