• 한국세라믹학회지
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• 제47권3호
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• pp.262-267
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• 2010

a-SiC has been thought as an ideal candidate for conventional silicon at many applications. However, the uniformity problem of deposition has been a obstacle for conventional use of a-SiC:H films. a-SiC:H films were deposited on (100) silicon wafer by RPECVD system in various temperature. HMDS and $H_2$ gas were used as a precursor and a carrier gas, respectively. The flow rate of HMDS source and $C_2H_2$ dilution gas was fixed in order to study the carbon effect on the film stoichiometric and bonding properties. The plasma power varied from 200 to 400W. We used three types of source delivery line to control the uniformity and film properties of deposited film. We showed that the change of source delivery line has effect on the film uniformity of deposited film and this change of line did not affect on film properties. Also, the change of deposition conditions has effect on the film uniformity.

• 한국재료학회지
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• 제9권2호
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• pp.155-162
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• 1999

Zirconia thin films of uniform structure were fabricated by plasma-enhanced metal-organic chemical vapor deposition. Deposition conditions such as substrate temperature were observed to have much influence on the formation of zirconia films, therefore the mechanism of decomposition of $Zr[TMHD]_4$precursor and film growth were examined by XRD, FT-IR etc., as well as the determination of the optimal deposition condition. From temperature dependence on zirconia, below the deposition temperature of 523K, the amorphous zirconia was formed while the crystalline of zirconia with preferred orientation of cubic (200) was obtained above the temperature. Deposits at low temperatures were investigated by FT-IR and the absorption band of films revealed that the zirconia thin film was in amorphous structure and has the same organic band as that of Zr precursor. In case of high temperature, it was found that Zr precursor was completely decomposed and crystalline zirconia was obtained. In addition, at 623K the higher RF power yielded the increased crystallinity of zirconia implying an increase in decomposition rate of precursor. However, it seems that RF power has nothing with the zirconia deposition process at 773K. It was found that the proper bubbler temperature of TEX>$Zr[TMHD]<_4$ precursor is needed along with high flow rate of carrier gas. Through AFM analysis it was determined that the growth mechanism of the zirconia thin film showed island model.

• Journal of Pharmaceutical Investigation
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• 제22권3호
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• pp.197-204
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• 1992

A gas chromatographic method using nitrogen phosphorous selective detection was developed for simultaneous determination of haloperidol and its metabolite, reduced haloperidol, in human plasma. Combelen was used as internal standard, The method involved extraction and trimethylsilylation followed by the injection of $2-4\;{\mu}l$ of benzene layer, which was used to dissolve the trimethylsilylated derivatives of haloperidol and reduced haloperidol, onto SE-54 column [5% phenyl methyl silica fused capillary column, $16m{\times}0.22\;mm$ $(I.D.){\times}0.33\;{\mu}m$ (coated thickness)]. The temperature of column oven was programmed from $200^{\circ}C\;to\;300^{\circ}C$ at the increase rate of $10^{\circ}C/min and also the temperatures of injector and detector were set at $300^{\circ}C$. Helium was used as carrier gas and its flow rate was maintained at 30 ml/min. The detection was conducted with nitrogen phosphorous selective detector. The retention times for combelen, reduced haloperidol and haloperidol were found to be 9.14, 9.75 and 9.99 min, respectively. The detection limits for haloperidol and reduced haloperidol in human plasma were both 0.2 ng/ml. The coefficients of variation of the intra-assay were generally low (below 9.8%). The mean absolute recoveries of added haloperidol and reduced haloperidol from plasma were 72% and 84%, respectively. No interferences from endogenous substances were found.

• 한국수소및신에너지학회논문집
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• 제29권5호
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• pp.473-482
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• 2018

To check applicability of recently developed new oxygen carrier for 0.5 MWth chemical looping combustion system, reactivity tests were carried out at high temperature and high pressure conditions. Pressure, temperature, gas velocity, $CH_4$ flow rate, and solid height were considered as operating variables. The new oxygen carrier (N016-R4) showed not only high fuel conversion but also high $CO_2$ selectivity within all the operating conditions in this study. The reactivity of N016-R4 particle was compared with previous oxygen carriers. The N016-R4 particle represented outstanding reactivity among 10 oxygen carriers in terms of fuel conversion and $CO_2$ selectivity.

• 한국재료학회지
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• 제2권1호
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• pp.19-26
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• 1992

$WF_6$와 $SiH_4$의 화학반옹으로부터 산화규소막 위에 텅스텐 핵이 형성되는 현상을 실험을 통해 관찰하였다. 핵이 생성되는 속도는 반응온도가 높고 운반기체의 유량이 적으며 반응기내의 압력이 높을수록 큰 것으로 나타났다. 또한 반응기체가 흘러가는 방향에서 아랫쪽으로 위치하는 표면에 핵이 생성되는 속도가 큰 것으로 나타났다. 산화막위에 생성된 텅스텐 핵의 형상과 파단면을 주사현미경으로 관찰하였으며 산화막위에 형성된 텅스텐 박막의 화학적 조성을 밝혀내었다.

• 한국분말재료학회지
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• 제9권5호
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• pp.322-328
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• 2002

Fe-Co nanocomposite powders with different composition were prepared by chemical vapor condensation (CVC) process and their characterizations were studied by means of X-ray diffraction, transmission electron microscopy, and vibrating sample magnetometer. The particles having the mean size of 5~25 nm consisted of metallic cores and oxide shells. The Co contents and particle size increased with increasing the carrier gas flow rate of Co precursor. The saturation magnetization and coercivity increased with increasing Co content. and the saturation magnetization maximized at the 40 wt.%Co. The Fe-Co nanocomposite powder oxidized at $400^{\circ}C$ showed the maximum coercivity of 1739 Oe.

• Journal of Information Display
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• 제2권4호
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• pp.57-62
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• 2001

Green-emitting $Zn_2SiO_4$:Mn phosphor particles having a spherical shape and high luminescence intensities under VUV were prepared by spray pyrolysis process under severe preparation conditions. The type of precursor solutions affected the morphology and luminescence characteristics of the prepared particles. The particles prepared from the clear solution by laboratory-scale process had spherical shape and dense morphology, while the particles prepared from the severe preparation conditions had rough surface and collapsed structure. However, the particles prepared from the colloidal solution utilizing fumed silica were spherical in shape and filled morphology at the severe preparation conditions of high flow rate of carrier gas, high concentration of solution, and large reactor size. The prepared $Zn_2SiO_4$:Mn phosphor particles with complete spherical shape had higher photoluminescence intensity than that of the commercial product prepared by solid state reaction.

• 한국전기전자재료학회논문지
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• 제19권6호
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• pp.512-518
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• 2006

In this paper, we investigated the deposition of pentacene thin film on a large area substrate by Organic Vapor Phase Deposition(OVPD) and applied it to fabrication of Organic Thin Film Transistor(OTFT). We extracted the optimum deposition conditions such as evaporation temperature of $260^{\circ}C$, carrier gas flow rate of 10 sccm and chamber vacuum pressure of 0.1 torr. We fabricated 72 OTFTs on the 4 inch size Si Wafer, Which produced the average mobility of $0.1{\pm}0.021cm^2/V{\cdot}s$, average subthreshold slope of 1.04 dec/V, average threshold voltage of -6.55 V, and off-state current is $0.973pA/{\mu}m$. The overall performance of pentacene TFTs over 4 ' wafer exhibited the uniformity with the variation less than 20 %. This proves that OVPD is a suitable methode for the deposition of organic thin film over a large area substrate.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.134-135
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• 2007

Growth of cubic SiC has been carried out on oxided Si substrate using atmospheric pressure chemical vapor deposition (APCVD). Hexamethyldisilane (HMDS) was used as the single precursor and nonflammable mixture of Ar and $H_2$ was used as carrier gas. Epitaxial growth had performed depositions under the various $H_2$ conditions which were adjusted from 0 to 100 seem. The effects of $H_2$ was characterized by surface roughness, thickness uniformity, films quality and elastic modulus. Thickness uniformity and films quality were performed by SEM. Surface roughness and elastic modulus were investigated by AFM and Nano-indentor, respectively. According to the $H_2$ flow rate, Poly 3C-SiC thin film quality was improved not only physical but also mechanical properties.

• 한국표면공학회지
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• 제15권4호
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• pp.208-217
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• 1982

To study the effect of TiC coating on weight change, microhardness, wear and heat - resistance of TiC layer, chemical vapour deposition on the various substrates has been carried out with the gaseous mixture of TiCl4, toluene, and H2 in the temperature range of 900 - 1000$^{\circ}C$. The results obtained are as follows ; (1) There is a limited value of carrier and reductant H2 gas flow rate, above which deteriorate effect on the TiC depoition arises (2) Increased thickness of TiC layer was resulted with increasing temperature and time. Better deposition was obtained with stainless steels and the best results were introduced by cobalt coating of substrates. (3) Wear resistance of the TiC coated specimen improved markedly. Heat resistivity of the coated steel showed excellent result, whereas the coated stainless Steels were infer-ior to the substrate.