• Journal of the Korean Ceramic Society
• /
• v.26 no.2
• /
• pp.235-241
• /
• 1989

A study on the APCVD(atmospheric pressure chemical vapor deposition) Al2O3 was done by using the aluminum-tri-isopropoxide/N2 reaction system at 40$0^{\circ}C$. When the flow rate of the carrier gas(N2) was over 2SLPM, heterogeneous reaction was observed. However, when the flow rate of the carrier gas was below 2SLPM, a porously deposited film or powder formation was observed. The film formed by a heterogeneous reaction was optically dense. The dense film is thought to be a kind of a hydrated alumina. After a thermal treatment of the film in the range of temperature from $600^{\circ}C$ to 1, 20$0^{\circ}C$, properties of the film seems to be changed due to dehydration and densification process. In the case of the powder on heat treatment(600~1, 20$0^{\circ}C$), both a phase transformation and the change of OH peak was observed.

• Transactions on Electrical and Electronic Materials
• /
• v.10 no.6
• /
• pp.203-207
• /
• 2009

We have investigated the effect of ambient gases on the structural, electrical, and optical characteristics of ITO thin films intended for use as anode contacts in OLED (organic light emitting diodes) devices. These ITO thin films are deposited by radio frequency (RF) magnetron sputtering under different ambient gases (Ar, Ar+$O_2$, and Ar+$H_2$) at $300{^{\circ}C}$. In order to investigate the influences of the oxygen and hydrogen, the flow rate of oxygen and hydrogen in argon mixing gas has been changed from 0.5 sccm to 5 sccm and from 0.01 sccm to 0.25 sccm, respectively. The intensity of the (400) peak in the ITO thin films increased with increasing $O_2$, flow rate whilst the (400) peak was nearly invisible in an atmosphere of Ar+$H_2$. The electrical resistivity of the ITO thin films increased with increasing $O_2$ flow rate, whereas the electrical resistivity decreased sharply under an Ar+$H_2$ atmosphere and was nearly similar regardless of the $H_2$ flow rate. The change of electrical resistivity with changes in the ambient gas composition was mainly interpreted in terms of the charge carrier mobility rather than the charge carrier concentration. All the films showed an average transmittance of over 80% in the visible range. The OLED device was fabricated with different ITO substrates made with the configuration of ITO/$\alpha$-NPD/DPVB/$Alq_3$/LiF/Al in order to elucidate the performance of the ITO substrate. Current density and luminance of OLED devices with ITO thin films deposited in Ar+$H_2$ ambient gas is the highest among all the ITO thin films.

• Journal of the Korean institute of surface engineering
• /
• v.40 no.3
• /
• pp.144-148
• /
• 2007

To prepare the transparent electrode for electronic devices such as flat panel or flexible displays, solar cells, and touch panels; tin doped $In_2O_3$ (ITO) films with low resistivity and a high transparency were fabricated using a facing target sputtering (FTS) system at the various oxygen gas flow rate. The carrier concentration and mobility of ITO films were measured by Hall Effect measurement. And the transmittance was measured using the UV-VIS spectrometer. As a result, we can obtain the ITO thin films prepared at 10% oxygen gas flow ratio, thickness 150 nm with transmittance 85% and resistivity $8.1{\times}10^{-4}{\Omega}cm$ and surface roughness 5.01 nm.

• Journal of the Korean Ceramic Society
• /
• v.51 no.4
• /
• pp.243-247
• /
• 2014

Spherical NiO-YSZ particles were synthesized by ultrasonic spray pyrolysis (USP). The morphology of the synthesized particles can be modified by controlling parameters such as precursor pH, carrier-gas flow-rate, and temperature of the heating zone. The synthesized spherical NiO-YSZ particles have rough surface morphology at high carrier-gas flow-rates due to rapid gas exhaustion and insufficient particle ordering. The Ni-YSZ cermet anode synthesized by ultrasonic spray pyrolysis at a flow rate of l L/min, with precursor solution at pH4, showed a higher maximum power density of 256 $mW/cm^2$ compared to a conventionally mixed Ni-YSZ anode (185 $mW/cm^2$) at $800^{\circ}C$. While the area-specific resistance of conventionally mixed Ni-YSZ anodes increases gradually with operation time (indicating performance degradation), the Ni-YSZ anode synthesized by USP does not exhibit any performance degradation, even after 500 h.

• Journal of the Korean Society of Propulsion Engineers
• /
• v.20 no.3
• /
• pp.9-16
• /
• 2016

An experimental study was performed to investigate the combustion characteristics of the liquid hydrocarbon fuel atomized by an ultrasonic oscillator. Configuration of the flame was caught by the high-speed camera, and images were analyzed in detail through a post-processing. In addition, the fuel consumption was measured using the balance during the combustion reaction. As a result, the consumption of atomized fuel increased with the increasing flow-rate of carrier-gas, but any correlation between the air/fuel ratio and carrier-gas flow-rate was not found. The variation of flame area was dependent on the fuel consumption and input power of the ultrasonic oscillator. FFT (Fast Fourier Transform) analyses using the flame area were conducted in order to discuss flame flickering.

• Analytical Science and Technology
• /
• v.21 no.6
• /
• pp.495-501
• /
• 2008

Agilent 5973 GC-MS instrument was modified so that the capillary direct interface was removed and that a silicone membrane was installed between GC and MS. Feasibility study of the membrane interface GC-MS has been carried out. Vacuum of the mass spectrometer was not affected by the carrier gas flow rate up to $4.7m{\ell}/min$. As the carrier flow rate was increased, peak tailing was reduced and chromatogram peaks appeared earlier. Chromatogram peaks showed better separation and higher sensitivity as the membrane thickness was reduced from $127{\mu}m$ to $75{\mu}m$, and also as the interface temperature was increased. However, the membrane interface GC-MS had drawbacks such as background ions at 73 and 147 m/z and poor peak separation due to peak tailing.

• Journal of the Semiconductor & Display Technology
• /
• v.15 no.4
• /
• pp.46-50
• /
• 2016

In this study, we have investigated the effect of the substrate temperature and hydrogen flow rate on the characteristics of IGZO thin films for the TCO(transparent conducting oxide). For this purpose, IGZO thin films were deposited by RF magnetron sputtering at room temperature and $300^{\circ}C$ with various $H_2$ flow rate. In order to investigate the influences of the hydrogen, the flow rate of hydrogen in argon mixing gas has been changed from 0.1sccm to 1.0sccm. IGZO thin films deposited at room temperature show amorphous structure, whereas IGZO thin films deposited at $300^{\circ}C$ show crystalline structure having an (222) preferential orientation. The electrical resistivity of the amorphous-IGZO films deposited at R.T. was lower than that of the crystalline-IGZO thin films deposited at $300^{\circ}C$. The increase of electrical resistivity with increasing substrate temperature was interpreted in terms of the decrease of the charge carrier mobility. The transmittance of the IGZO films deposited at $300^{\circ}C$ was decreased deposited with hydrogen gas.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1992.05a
• /
• pp.117-121
• /
• 1992

Zinc oxide thin films were obtained from zinc acetate-2-water and oxygen by photo-CVD method. (1) The formation of ZnO films sarts from 100[$^{\circ}C$] and the deposition rate increases with increasing substrate temperature. (2) The rate of deposition was also affected by flow rates of O$_2$(reaction gas) and N$_2$(Carrier gas). (3) The deposition rate decreases with increasing O$_2$mole rate. (4) The transmission of the films was independent of oxygen mole rate and it was largely affected substrate temperature. (5) The electric resistivity of th films was largely varied at oxygen mole rate 10[%] and above 20[%], a plateau was encountered. Also, it increases with increasing substrate temperature. As the results, at substrate temperature: 200[$^{\circ}C$]; O$_2$gas mole rate:10[%]; reation time:10[min] pressure: 10$\^$-2/[atm], deposition rate; transmittance; resistivity were 780[A$\^$0/; 94[%]; 7${\times}$10$\^$-2/[$\Omega$$.$cm] respectively.

• YAKHAK HOEJI
• /
• v.16 no.1
• /
• pp.55-64
• /
• 1972

The determination method of l-ephedrine and dl-methylephedrine by gas chromatography was developed, using reactive alkaline precolumn packed with celite 545 containing KOH. Symmetrical peaks were achieved under the condition, inlet temperature, $180^{\circ}C$-$230^{\circ}C$; column temperature, $180^{\circ}C$- $160^{\circ}C$; carrier gas flow rate, 30ml/minute. The peaks of the salts coincided with those of bases. When this method was applied to preparations, using d-dimethylaminobenzaldehyde as inner standard, good results were obtained. The relative retention times of l-ephedrine and dl-methylephedrine to p-dimethyl aminobenzaldehyde were 0.50 and 0.65 respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.26 no.5
• /
• pp.401-409
• /
• 2013

Numerical analysis on RF (Radio-Frequency) thermal plasma treatment of micro-sized Ni metal was carried out to understand the synthesis mechanism of nano-sized Ni powder by RF thermal plasma. For this purpose, the behaviors of Ni metal particles injected into RF plasma torch were investigated according to their diameters ($1{\sim}100{\mu}m$), RF input power (6 ~ 12 kW) and the flow rates of carrier gases (2 and 5 slpm). From the numerical results, it is predicted firstly that the velocities of carrier gases need to be minimized because the strong injection of carrier gas can cool down the central column of RF thermal plasma significantly, which is used as a main path for RF thermal plasma treatment of micro-sized Ni metal. In addition, the residence time of the injected particles in the high temperature region of RF thermal plasma is found to be also reduced in proportion to the flow rate of the carrier gas In spite of these effects of carrier gas velocities, however, calculation results show that a Ni metal particle even with the diameter of $100{\mu}m$ can be completely evaporated at relatively low power level of 10 kW during its flight of RF thermal plasma torch (< 10 ms) due to the relatively low melting point and high thermal conductivity. Based on these observations, nano-sized Ni metal powders are expected to be produced efficiently by a simple treatment of micro-sized Ni metal using RF thermal plasmas.