• Title/Summary/Keyword: carrier gas flow rate

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Visualization of the Combustion-field in Ultrasonically-atomized Slit-jet Flame Using a Thermo-graphic Camera (열화상카메라를 이용한 초음파 무화 슬릿제트화염의 연소장 가시화)

  • Kim, Min Sung;Koo, Jaye;Kim, Heuy Dong;Kim, Jeong Soo
    • Journal of the Korean Society of Propulsion Engineers
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    • v.20 no.4
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    • pp.1-8
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    • 2016
  • An experimental study was performed for the combustion-field visualization of the burner which burns the liquid hydrocarbon fuel atomized by an ultrasonic oscillator. Configurations of the flame and combustion-field were caught by both high-speed camera and thermo-graphic camera, and those images were analyzed in detail through a post-processing. As a result, the combustion-field grew and reaction-temperature rose due to the strengthening of combustion reaction with the increasing flow-rate of carrier-gas. In addition, a phenomenon of flame flickering was discussed through the comparative analysis of the variational behaviors between the visible flame and IR (Infrared) flame-field.

Behavior of the Ultrasonically-atomized Liquid-fuel Flame Injected through a Slit-jet Nozzle (Slit-jet 노즐을 통해 분사되는 초음파 무화 액체연료 화염의 거동)

  • Kim, Min Cheol;Kim, Min Sung;Kim, Jeong Soo
    • Journal of the Korean Society of Propulsion Engineers
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    • v.22 no.6
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    • pp.1-10
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    • 2018
  • An experimental study was performed for the behavior of the burner flame which results from burning of the liquid hydrocarbon fuel atomized by an ultrasonic transducer. Configurations of the flame and combustion-field were caught by both high-speed camera and thermo-graphic camera, and those images were analyzed in detail through a image post-processing. As a result, the combustion-field grew and reaction-temperature rose due to the strengthening of combustion reaction with the increasing flow-rate of carrier-gas. In addition, a phenomenon of flame flickering was discussed through the comparative analysis of the variational behavior between the visible flame and IR (Infrared) flame-field. Also, the flickering frequency of the flame was confirmed through FFT (Fast Fourier Transform) analysis employing the flame area.

Effect of Temperature on Growth of Tin Oxide Nanostructures (산화주석 나노구조물의 성장에서 기판 온도의 효과)

  • Kim, Mee-Ree;Kim, Ki-Chul
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.20 no.4
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    • pp.497-502
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    • 2019
  • Metal oxide nanostructures are promising materials for advanced applications, such as high sensitive gas sensors, and high capacitance lithium-ion batteries. In this study, tin oxide (SnO) nanostructures were grown on a Si wafer substrate using a two-zone horizontal furnace system for a various substrate temperatures. The raw material of tin dioxide ($SnO_2$) powder was vaporized at $1070^{\circ}C$ in an alumina crucible. High purity Ar gas, as a carrier gas, was flown with a flow rate of 1000 standard cubic centimeters per minute. The SnO nanostructures were grown on a Si substrate at $350{\sim}450^{\circ}C$ under 545 Pa for 30 minutes. The surface morphology of the as-grown SnO nanostructures on Si substrate was characterized by field-emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM). Raman spectroscopy was used to confirm the phase of the as-grown SnO nanostructures. As the results, the as-grown tin oxide nanostructures exhibited a pure tin monoxide phase. As the substrate temperature was increased from $350^{\circ}C$ to $424^{\circ}C$, the thickness and grain size of the SnO nanostructures were increased. The SnO nanostructures grown at $450^{\circ}C$ exhibited complex polycrystalline structures, whereas the SnO nanostructures grown at $350^{\circ}C$ to $424^{\circ}C$ exhibited simple grain structures parallel to the substrate.

Characteristics of Continuous Preparation of ZnO Powder in a Micro Drop/bubble Fluidized React (마이크로 액적/기포 유동반응기에서 ZnO 입자의 연속제조 특성)

  • Lee, Seung Ho;Yang, Si Woo;Lim, Dae Ho;Yoo, Dong Jun;Lee, Chan Ki;Kang, Gyung Min;Kang, Yong
    • Korean Chemical Engineering Research
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    • v.53 no.5
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    • pp.597-602
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    • 2015
  • Characteristics of continuous preparation of ZnO powder were investigated in a micro drop/bubble fluidized reactor of which diameter and height were 0.03 m and 1.5 m, respectively. The flow rate of carrier gas for transportation of precursors to the reactor was 6.0 L/min and the concentration of Zn ion in the precursor solutions was 0.4 mol/L, respectively. Effects of reaction temperature (973 K~1,273 K) and flow rate of micro bubbles (0~0.4 L/min) on the pore characteristics of prepared ZnO powder were examined. The optimum reaction temperature for the maximum porosity in the ZnO powder was 1,073 K within this experimental condition. The mean size of ZnO powder prepared continuously in the reactor decreased but the surface of the powder became smooth, with increasing reaction temperature. The injection of micro bubbles into the reactor could enhance the formation of pores in the powder effectively, and thus the mean BET surface area could be increased by up to 58%. The mean size of prepared ZnO powder was in the range of $1.25{\sim}1.75{\mu}m$ depending on the reaction temperature.

Simultaneous Analyses for Trace Multi-Odorous and Volatile Organic Compounds in Gas using a Triple-bed Adsorbent Tube (Triple-bed Adsorbent Tube를 이용한 가스상 극미량 복합 악취 및 휘발성 유기화합물의 동시 분석)

  • Seo, Yong Soo;Lee, Jea Keun
    • Korean Chemical Engineering Research
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    • v.48 no.2
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    • pp.244-252
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    • 2010
  • The objective of this study is to assess feasibility of simultaneous analysis for trace multi-components odorous and volatile organic compounds using a Triple-bed adsorbent tube with a thermal desorber and GC-MS. Triple-bed adsorbent tube is 3 bed packed Tenax-TA with small amount of Carbopack B and Carbosieve SIII in order of adsorption strength in a tube. The operating conditions of GC-MS was possibly able to and effectively detect high volatile and low molecular weight compounds at the mass range of 20~350 m/z using a below impurity 1ppm of Helium carrier gas, of which quantitatively analyzed by target ion extracts. According to the experiment, $C_1{\sim}C_5$ of 14 components; sulfur containing compounds(2), ketones(2), alcohols(4) and aldehydes(6) were simultaneously analyzed with recoveries of 99%, and good repeatability and linearity. High volatile and low molecular weight compounds such as methyl alcohol and acetaldehyde can be safely quantified with high recovery at a condition of 50mL/min of flow rate, below 2L of adsorption volume, and 45% of relative humidity. Target ion extract can also simultaneously quantify multicomponents with odorous and volatile organic compounds in an occasion of piled up two peaks.

Synthesis of High-Quality Single-Walled Carbon Nanotube Fibers by Vertical CVD (수직 가열로를 이용한 고순도 단일벽 탄소나노튜브 섬유의 합성)

  • Kim, Tae-Min;Song, Woo-Seok;Kim, Yoo-Seok;Kim, Soo-Youn;Choi, Won-Chel;Park, Chong-Yun
    • Journal of the Korean Vacuum Society
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    • v.19 no.5
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    • pp.377-384
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    • 2010
  • Many routes have been developed for the synthesis of signle-walled carbon nanotubes (SWCNTs). We spun fibers of SWCNTs directly from vertical furnace using a liquid source of carbon and an iron-contained molecule. The solution was prepared by ethanol as a carbon source, in which ferrocene as a catalyst, thiophene were dissolved. It was then injected from the top of the furnace into hot zone with hydrogen as a carrier gas. We successfully synthesized high-quality SWCNTs by adjusting the various experimental conditions, such as concentration of ferrocene, solution injection rate, concentration of thiophene, and hydrogen flow rate. Measurement of Raman spectroscopy, scanning electron microscopy, and transmission electron microscopy were carried out to find the optimized conditions. The synthesized SWCNTs (1.16~1.64 nm) appeared a bundle structure and well-aligned parallel to the direction of furnace. These results also provide an simple way for high-quality SWCNTs mass production and fabricating direct spining SWCNTs fiber. It will allow one-step production of SWCNTs fiber with potentially excellent properties and wide-range applications.

Design and Economic Analysis of Low Pressure Liquid Air Production Process using LNG cold energy (LNG 냉열을 활용한 저압 액화 공기 생산 공정 설계 및 경제성 평가)

  • Mun, Haneul;Jung, Geonho;Lee, Inkyu
    • Korean Chemical Engineering Research
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    • v.59 no.3
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    • pp.345-358
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    • 2021
  • This study focuses on the development of the liquid air production process that uses LNG (liquefied natural gas) cold energy which usually wasted during the regasification stage. The liquid air can be transported to the LNG exporter, and it can be utilized as the cold source to replace certain amount of refrigerant for the natural gas liquefaction. Therefore, the condition of the liquid air has to satisfy the available pressure of LNG storage tank. To satisfy pressure constraint of the membrane type LNG tank, proposed process is designed to produce liquid air at 1.3bar. In proposed process, the air is precooled by heat exchange with LNG and subcooled by nitrogen refrigeration cycle. When the amount of transported liquid air is as large as the capacity of the LNG carrier, it could be economical in terms of the transportation cost. In addition, larger liquid air can give more cold energy that can be used in natural gas liquefaction plant. To analyze the effect of the liquid air production amount, under the same LNG supply condition, the proposed process is simulated under 3 different air flow rate: 0.50 kg/s, 0.75 kg/s, 1.00 kg/s, correspond to Case1, Case2, and Case3, respectively. Each case was analyzed thermodynamically and economically. It shows a tendency that the more liquid air production, the more energy demanded per same mass of product as Case3 is 0.18kWh higher than Base case. In consequence the production cost per 1 kg liquid air in Case3 was $0.0172 higher. However, as liquid air production increases, the transportation cost per 1 kg liquid air has reduced by $0.0395. In terms of overall cost, Case 3 confirmed that liquid air can be produced and transported with $0.0223 less per kilogram than Base case.

Optimization of ZnO-based transparent conducting oxides for thin-film solar cells based on the correlations of structural, electrical, and optical properties (ZnO 박막의 구조적, 전기적, 광학적 특성간의 상관관계를 고려한 박막태양전지용 투명전극 최적화 연구)

  • Oh, Joon-Ho;Kim, Kyoung-Kook;Song, Jun-Hyuk;Seong, Tae-Yeon
    • 한국신재생에너지학회:학술대회논문집
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    • 2010.11a
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    • pp.42.2-42.2
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    • 2010
  • Transparent conducting oxides (TCOs) are of significant importance for their applications in various devices, such as light-emitting diodes, thin-film solar cells, organic light-emitting diodes, liquid crystal displays, and so on. In order for TCOs to contribute to the performance improvement of these devices, TCOs should have high transmittance and good electrical properties simultaneously. Sn-doped $In_2O_3$ (ITO) is the most commonly used TCO. However, indium is toxic and scarce in nature. Thus, ZnO has attracted a lot of attention because of the possibility for replacing ITO. In particular, group III impurity-doped ZnO showed the optoelectronic properties comparable to those of ITO electrodes. Al-doped ZnO exhibited the best performance among various doped ZnO films because of the high substitutional doping efficiency. However, in order for the Al-doped ZnO to replace ITO in electronic devices, their electrical and optical properties should further significantly be improved. In this connection, different ways such as a variation of deposition conditions, different deposition techniques, and post-deposition annealing processes have been investigated so far. Among the deposition methods, RF magnetron sputtering has been extensively used because of the easiness in controlling deposition parameters and its fast deposition rate. In addition, when combined with post-deposition annealing in a reducing ambient, the optoelectronic properties of Al-doped ZnO films were found to be further improved. In this presentation, we deposited Al-doped ZnO (ZnO:$Al_2O_3$ = 98:2 wt%) thin films on the glass and sapphire substrates using RF magnetron sputtering as a function of substrate temperature. In addition, the ZnO samples were annealed in different conditions, e.g., rapid thermal annealing (RTA) at $900^{\circ}C$ in $N_2$ ambient for 1 min, tube-furnace annealing at $500^{\circ}C$ in $N_2:H_2$=9:1 gas flow for 1 hour, or RTA combined with tube-furnace annealing. It is found that the mobilities and carrier concentrations of the samples are dependent on growth temperature followed by one of three subsequent post-deposition annealing conditions.

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Preparation of Silicon Tetrachloride by Chlorination of Silicon (실리콘의 염소화반응에 의한 사염화규소 제조)

  • Park, Kyun Young;Lee, Mi Sun;Kim, Min Cheol;Lee, Chan Hee;Park, Hoey Kyung;Kang, Tae Won;Jeong, Hae Seong;Han, Kyoung Ah;Huh, Weon Hoe;You, Ji Cheol
    • Korean Chemical Engineering Research
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    • v.51 no.3
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    • pp.407-410
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    • 2013
  • The chlorination of a metallurgical-grade silicon was carried out in a fluidized bed reactor, 25 mm in diameter. The flow rate of the chlorine admitted into the reactor was 0.2 L/min and that of the carrier nitrogen was 0.8~1.0 L/min. The reactor temperature was maintained at $450^{\circ}C$ and the temperature of the coolant at the $SiCl_4$ condenser was at $-5^{\circ}C$. The $SiCl_4$ yield increased with increasing the mole fraction of chlorine in the feed gas, exhibiting 28% at the mole fraction of 0.2. Further increase of the chlorine mole fraction was not attempted in a worry that the reactor might be failed due to the high exothermicity of the reaction. The production of $SiCl_4$ from silicon by fluidized bed chlorination was demonstrated on a laboratory scale, which is a stepping stone for future studies under more severe conditions toward industrial application.

Low Temperature Growth of MCN(M=Ti, Hf) Coating Layers by Plasma Enhanced MOCVD and Study on Their Characteristics (플라즈마 보조 유기금속 화학기상 증착법에 의한 MCN(M=Ti, Hf) 코팅막의 저온성장과 그들의 특성연구)

  • Boo, Jin-Hyo;Heo, Cheol-Ho;Cho, Yong-Ki;Yoon, Joo-Sun;Han, Jeon-G.
    • Journal of the Korean Vacuum Society
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    • v.15 no.6
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    • pp.563-575
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    • 2006
  • Ti(C,N) films are synthesized by pulsed DC plasma enhanced chemical vapor deposition (PEMOCVD) using metal-organic compounds of tetrakis diethylamide titanium at $200-300^{\circ}C$. To compare plasma parameter, in this study, $H_2$ and $He/H_2$ gases are used as carrier gas. The effect of $N_2\;and\;NH_3$ gases as reactive gas is also evaluated in reduction of C content of the films. Radical formation and ionization behaviors in plasma are analyzed in-situ by optical emission spectroscopy (OES) at various pulsed bias voltages and gas species. He and $H_2$ mixture is very effective in enhancing ionization of radicals, especially for the $N_2$. Ammonia $(NH_3)$ gas also highly reduces the formation of CN radical, thereby decreasing C content of Ti(C, N) films in a great deal. The microhardness of film is obtained to be $1,250\;Hk_{0.01}\;to\;1,760\;Hk_{0.01}$ depending on gas species and bias voltage. Higher hardness can be obtained under the conditions of $H_2\;and\;N_2$ gases as well as bias voltage of 600 V. Hf(C, N) films were also obtained by pulsed DC PEMOCYB from tetrakis diethyl-amide hafnium and $N_2/He-H_2$ mixture. The depositions were carried out at temperature of below $300^{\circ}C$, total chamber pressure of 1 Torr and varying the deposition parameters. Influences of the nitrogen contents in the plasma decreased the growth rate and attributed to amorphous components, to the high carbon content of the film. In XRD analysis the domain lattice plain was (111) direction and the maximum microhardness was observed to be $2,460\;Hk_{0.025}$ for a Hf(C,N) film grown under -600 V and 0.1 flow rate of nitrogen. The optical emission spectra measured during PEMOCVD processes of Hf(C, N) film growth were also discussed. $N_2,\;N_2^+$, H, He, CH, CN radicals and metal species(Hf) were detected and CH, CN radicals that make an important role of total PEMOCVD process increased carbon content.