• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.12
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• pp.69-76
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• 1993

The statistical methodology using RSM (response surface method) was used too ptimize the deposition conditions of selective CVD tungsten process for improving the deposition rate and the adhesion property. Temperature, flow rate of SiH$_4$ and WF$_6$ and H$_2$ and Ar carrier gases were chosen for the deposition variables and process characteristics due to carrier gas were intensively investigated. It was observed that temperature was the main factor influencingthe deposition rate in the case of H$_2$ carrier gas while the reactant ratio, $SiH_{4}/WF_{6}$, had the principal effect on the deposition rate in the case of Ar carrier gas. The increased deposition rate and the good adhesion to Si were obtained under Ar carrier gas compared to H$_2$ carrier gas. The optimum conditions for deposition rate and antipeeling property were found to be the temperature range of 300~32$0^{\circ}C$ and the reactant ratio, $SiH_{4}/WF_{6}$, of 0.5~0.6.

• KSBB Journal
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• v.13 no.5
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• pp.477-482
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• 1998

A biosensor with PZT piezoelectric ceramic crystal was developed for the detection of formaldehyde gas. Poled PZT piezoelectric ceramic disk was made from ZrO2, TiO2 and Nb2O5, together with the addition of PbO and polyvinyl alcohol, through various processes of mixing, calcination drying, crushing, forming, sintering, polishing, ion coating and poling. Oscillator circuit of sensor was made of operational amplifier(AD811AN). Formaldehyde dehydrogenase was immobilized onto a piezoelectic ceramic crystal, together with the cofactors, reduced glutathione and nicotinamide adenine dinucleotide. The effect of flow rate on the sensitivity was determined by varing the flow rate of carrier gas from 24.7mL/min to 111.7mL/min through detector cell. The results indicated that as the flow rate was increased, the recovery rate was increased. And a significant increase in the sensitivity was observed in enhanced flow rate of carrier gas. Frequency difference(ΔF) of immobilized PZT piezoelectic disk increased proportionally to the concentration gas and reproduced to repeated exposures of formaldehyde gas(28ppm, Δ68Hz).

• YAKHAK HOEJI
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• v.39 no.5
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• pp.480-486
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• 1995

The change in discharge current of a glow discharge has been shown the potential sensitive detector for gas chromatography. To investigate the effect of carrier gas on the electrical characteristics of the discharge and the peak response, the discharge pressure, gas flow rate, and discharge gap have been studied. The discharge gas included the Ar, He, and N$_{2}$. The gas flow rate has been found one of the important parameters to affect both the electrical characteristics and the peak response.

• Journal of the Semiconductor & Display Technology
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• v.17 no.2
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• pp.6-11
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• 2018

In this study, we have studied the effect of substrate temperature and hydrogen flow rate on the characteristics of MZO thin films for the TCO(Transparent conducting oxide). MZO thin films were deposited by RF magnetron sputtering at room temperature and $100^{\circ}C$ with various $H_2$ flow rate(1sccm~4sccm). In order to investigate the effect of hydrogen gas flow rate on the MZo thin film, we experimented with changing the hydrogen in argon mixing gas flow rate from 1.0sccm to 4.0sccm. MZO thin films deposited at room temperature and $100^{\circ}C$ show crystalline structure having (002), (103) preferential orientation. The electrical resistivity of the MZO films deposited at $100^{\circ}C$ was lower than that of the MZO film deposited at room temperature. The decrease of electrical resistivity with increasing substrate temperature was interpreted in terms of the increase of the charge carrier mobility and carrier concentration which seems to be due to the oxygen vacancy generated by the reducing atmosphere in the gas. The average transmittance of the MZO films deposited at room temperature and $100^{\circ}C$ with various hydrogen gas flow was more than 80%.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.23 no.9
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• pp.1151-1162
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• 1999

The effects of radial heat and $H_2O$ diffusion on the evolution of silica particles in coflow diffusion flames have been studied experimentally. The evolution of silica aggregate particles in coflow diffusion flames has been measured experimentally using light scattering and thermophoretic sampling techniques. The measurements of scattering cross section from $90^{\circ}$ light scattering have been utilized to calculate the aggregate number density and volume fraction using with combination of measuring the particle size and morphology through the localized sampling and a TEM image analysis. Aggregate or particle number densities and volume fractions were calculated using Rayleigh-Debye-Gans and Mie theory for fractal aggregates and spherical particles, respectively. Flame temperatures and volumetric differential scattering cross sections have been measured for different flame conditions such as inert gas species, $H_2$ flow rates, and burner injection configurations to examine the relation between the formation of particles and radial $H_2O$ diffusion. The comparisons of oxidation and flame hydrolysis have also been made for various $H_2$ flow rates using $N_2$ or $O_2$ as a carrier gas. Results indicate that the role of oxidation becomes dominant as both carrier gas($O_2$) and $H_2$ flow rates increases since the radial heat diffusion precedes $H_2O$ diffusion in coflow flames used in this study. The effect of carrier gas flow rates on the evolution of silica particles have also been studied. When using $N_2$ as a carrier gas, the particle volume fraction has a maximum at a certain carrier gas flow rate and as the flow rate is further increased, the hydrolysis reaction Is delayed and the spherical particles finally evolves into fractal aggregates due to decreased flame temperature and residence time.

• Applied Science and Convergence Technology
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• v.25 no.6
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• pp.145-148
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• 2016

This paper, Al-doped ZnO(AZO) thin films for application as transparent conducting oxide films were deposited on the Corning glass substrate by using RF magnetron sputtering system. The effects of various Argon gas flow rates on optical and electrical characteristics of AZO films were investigate sputtering method. The Carrier Concentration is enhanced as Ar gas rate increases, and also the oxygen vacancy concentration. The figure of merit obtained in this study means that AZO films which deposited Ar gas rate of 75 sccm have the highest Carrier concentration and Hall mobility, which have the highest photoelectrical performance that it could be used as transparent electrodes.

• Journal of the Korean Magnetics Society
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• v.18 no.1
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• pp.14-18
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• 2008

Bismuth-substituted yttrium iron garnet(Bi:YIG) films, which show excellent magnetic and magneto-optical properties as well as low optical losses by optimizing their deposition and post-annealing condition, have been attracting great attention in optical device research area. In this study, the Bi:YIG thick films were deposited with the aerosol deposition method for the final purpose of applying them to optical isolators. Since the aerosol deposition is based on the impact adhesion of sub-micrometer particles accelerated by a carrier gas to a substrate, the flow rate of carrier gas, which is in proportion to mechanically collision energy, should be treated as an important parameter. The Bi:YIG($Bi_{0.5}Y_{2.5}Fe_5O_{12}$) particles with $100{\sim}500$ nm in average diameter were carried and accelerated by nitrogen gas with the flow rate of 0.5 l/min${\sim}$10 l/min. The coercive force decreased from 51 Oe to 37 Oe exponentially with increasing gas flow rate. This is presumably due to the fact that the optimal collision energy results in reduction of impurity and pore, which makes the film to be soft magnetically. The saturation magnetization decreased due to crystallographical distortion of the film with increasing gas flow rate.

• Journal of the Korean Ceramic Society
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• v.28 no.5
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• pp.353-358
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• 1991

Fine powders of the 2212 superconducting phase of bismuth system have been prepared directly from solution using ultrasonic spray pyrolysis. The fine superconducting powders produced by pyrolysis were characterized for the size, shape, and crystalline phase by SEM and XRD. The pyrolysis temperature, flow rate of the carrier gas, residence time of the droplets greatly influenced the size, shape, and crystalline phase. The optimum temperature and flow rate of the carrier gas for the preparation of fine powders of the 2212 superconduting phase were found to be 830$^{\circ}C$and 3ι/min, respectively.

• Journal of the Semiconductor & Display Technology
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• v.12 no.4
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• pp.49-54
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• 2013

In this study, we have investigated the effect of the substrate temperature and oxygen flow rate on the characteristics of IZO thin films for the OLED (organic light emitting diodes) devices. For this purpose, IZO thin films were deposited by RF magnetron sputtering at room temperature and $300^{\circ}C$ with various $O_2$ flow rate. In order to investigate the influences of the oxygen, the flow rate of oxygen in argon mixing gas has been changed from 0.1sccm to 0.5sccm. IZO thin films deposited at room temperature show amorphous structure, whereas IZO thin films deposited at $300^{\circ}C$ show crystalline structure having an (222) preferential orientation regardless of $O_2$ flow rate. The electrical resistivity of IZO film increased with increasing flow rate of $O_2$ under Ar+$O_2$. The change of electrical resistivity with increasing flow rate of $O_2$ was mainly interpreted in terms of the charge carrier concentration rather than the charge carrier mobility. The electrical resistivity of the amorphous-IZO films deposited at R.T. was lower than that of the crystalline-IZO thin films deposited at $300^{\circ}C$. The change of electrical resistivity with increasing substrate temperature was mainly interpreted in terms of the charge carrier mobility rather than the charge carrier concentration. All the films showed the average transmittance over 85% in the visible range. The current density and the luminance of OLED devices with IZO thin films deposited at room temperature in 0.1sccm $O_2$ ambient gas are the highest amongst all other films. The optical band gap energy of IZO thin films plays a major role in OLED device performance, especially the current density and luminance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.521-522
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• 2006

In this paper, hybrid air-water discharges were used to develop an optimal condition for providing a high level of water decomposition for hydrogen yield. Electrical and optical phenomena accompanying the discharges were investigated along with feeding gases, flow rates, and point-to-plane electrode gap distance. The primary focus of this experiment was put on the optical emission of the near UV range, with the energy threshold sufficient for water dissociation and excitation. The $OH(A^{2+},'=0\;X^2,"=0$) band's optical emission intensity indicated the presence of plasma chemical reactions involving hydrogen formation. In the gaseous atmosphere saturated with water vapor the OH(A-X) band intensity was relatively high compared to the liquid and transient phases although the optical emission strongly depended on the flow rate and type of feeding gas. In the gaseous phase discharge phenomenon for Ar carrier gas transformed into a gliding arc via the flow rate growth. OH(A-X) band's intensity increased according to the flow rate or residence time of He feeding gas. Reciprocal tendency was acquired for $N_2$ and Ar carrier gases. The peak value of OH(A-X) intensity was observed in the proximity of the water surface, however in the cases of Ar and $N_2$ with 0.5 SLM flow rate peaks shifted to the region below the water surface. Rotational temperature ($T_{rot}$) was estimated to be in the range of 900-3600 K, according to the carrier gas and flow rate, which corresponds to the arc-like-streamer discharge.