• 대한전자공학회논문지
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• 제27권2호
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• pp.81-92
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• 1990

MOCVD에 의하여 초격자 및 HEMT 구조를 성장하고 그 특성을 보고한다. GaAs/AlGaAs의 경우, 주기성(periodicity),계면 급준성, Al 조성 균일성을 경사연마 및 double crystal x-ray 측정에 의하여 확인하였고, 고립 양자우물의 양자효과(quantum size effect)에 의한 PL(photoluminescence) 스펙트럼을 관측하였다. 이 PL FWHM (full width at half maximum)과 우물 두께의 관계로 부터 계면 급준성이 1 monolayer fluctuation 정도인 초격자 구조가 성장되었음을 확인하였다. 한편, HEMT 구조의 경우에 헤테로 계면에 형성된 2차원 전자층의 존재를 C-V profile, SdH(shu-bnikov-de Haas)진동, 저온 Hall 측정을 통하여 확인하였다. 저온 Hall 측정에서 15K에서 sheet carrier density $5.5{\times}10^{11}cm^-2$,mobility $69,000cm^2/v.sec$, 77K에서 sheet carrier density $6.6{\times}10^{11}cm^-2$, mobility $41,200cm^2/v.sec$ 이었다. 또한 quantum Hall effect 측정으로 부터 잘 형성된 SdH 진동 및 quantized Hall plateau를 관측하였다.

• International Journal of Fuzzy Logic and Intelligent Systems
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• 제7권4호
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• pp.221-227
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• 2007

This paper introduces an on-line particle-filtering-based framework for failure prognosis in nonlinear, non-Gaussian systems. This framework uses a nonlinear state-space model of the plant(with unknown time-varying parameters) and a particle filtering(PF) algorithm to estimate the probability density function(pdf) of the state in real-time. The state pdf estimate is then used to predict the evolution in time of the fault indicator, obtaining as a result the pdf of the remaining useful life(RUL) for the faulty subsystem. This approach provides information about the precision and accuracy of long-term predictions, RUL expectations, and 95% confidence intervals for the condition under study. Data from a seeded fault test for a UH-60 planetary carrier plate are used to validate the proposed methodology.

• 한국도서관정보학회지
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• 제16권
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• pp.99-128
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• 1989

The purpose of this study is to examine the problems of the each cataloging rules about the physical description area that generated the greatest controversy in the cataloging of microcomputer software, and to suggest solutions of these problems. The results of the study can be summarized as follows: 1. Because the physical description area of materials is to identify the physical attributes of the carrier, file description might better described in the material specific details area. 2. Integrated software that related file is linked together need to be used terms that represented any type of software 3. It is desirable that the term 'computer' is to be used as a modifier to devide the carrier of microcomputer and other non book materials. 4. System requirements would better described in a note area rather than physical, description area. 5. It is desirable that other physical details such as recording density, tracks, etc., is to describe in the physical description area, since such information is to represent specifics of the carrier.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.282-283
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• 2006

The transport phenomena of arsenic (As) doped amorphous selenium(a-Se:As) thin film for digital X-ray conversion material has been reported. The effect of As addition on the carrier mobility and recombination lifetime in a-Se:As sample has been measured using the moving photo-carrier grating (MPG) technique. An Increase in hole mobility and recombination was observed when 0.3% arsenic, was added into a-Se sample, whereas electron mobility decrease with arsenic addition due to the defect density. The fabricated a-Se:03% As device exhibited the highest X-ray sensitivity.

• 대한전자공학회논문지TE
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• 제37권5호
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• pp.17-27
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• 2000

SCH 양자우물 레이저에서 수치적 모델을 이용하여 캐리어의 양자우물 subband 점유에 따른 광 이득, 광 미분 이득과 재결합 전류를 계산하고, 이를 해석적 캐리어 포획 및 탈출 모델과 연계하여 양자우물 주입 전류와 SCH bulk 캐리어의 관계를 도출하였다. 이를 토대로 SCH 영역과 양자우물의 캐리어 비율과 전류 비율을 얻고, 이에 따른 광 이득과 광 미분 이득의 변화를 고찰하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.252-253
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• 2005

The effects of As addition in amorphous selenium (a-Se) films on the carrier mobilities and the recombination lifetime have been studied using the moving photo-carrier grating (MPG) measurements. The electron and hole mobility, and recombination lifetime of a-Se films with arsenic (As) additions up to 1% have been obtained. We have found an increase in hole drift mobility and recombination lifetime, especially when 0.3% As is added into a-Se film, whereas electron mobility decreases with As addition due to the defect density from shallow traps.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1990년도 하계학술대회 논문집
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• pp.397-400
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• 1990

All the existing PWM voltage-controlled inverters, regardless of the advantages of the operation, have produced serious problems such as acoustic noise. In this raper, the PMW technique for acoustic noise reduction is implemented using randomly modulated carrier modulation. By modulating the triangular carrier in sinusoidal PWM with band-limited white noise, it is shown that the acoutic noise level and spectral density is reduced in a tone. This method shows great merit in application the AC motor drive system to particularly environment.

• Journal of Communications and Networks
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• 제9권4호
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• pp.466-472
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• 2007

Single carrier block transmission with frequency domain equalization(SC-FDE) has been shown to be a promising candidate in ultra-wideband(UWB) communications. In this paper, we analyze the performance of SC-FDE over UWB communications with channel estimation error. The probability density functions of the frequency domain minimum mean-squared error(MMSE) equalizer taps are derived in closed form. The error probabilities of single carrier block transmission with frequency domain MMSE equalization under imperfect channel estimation are presented and evaluated numerically. Compared with the simulation results, our semi-analytical analysis yields fairly accurate bit error rate performance, thus validating the use of the Gaussian approximation method in the performance analysis of the SC-FDE system with channel estimation error.

• Journal of information and communication convergence engineering
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• 제16권4호
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• pp.248-251
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• 2018

To research the characteristics of $TiO_2$ as an insulator, $TiO_2$ films were prepared with various annealing temperatures. It was researched the currents of $TiO_2$ films with Schottky barriers in accordance with the contact's properties. The potential barrier depends on the Schottky barrier and the current decreases with increasing the potential barrier of $TiO_2$ thin film. The current of $TiO_2$ film annealed at $110^{\circ}C$ was the lowest and the carrier density was decreased and the resistivity was increased with increasing the hall mobility. The Schottky contact is an important factor to become semiconductor device, the potential barrier is proportional to the hall mobility, and the hall mobility increased with increasing the potential barrier and became more insulator properties. The reason of having the high mobility in the thin films in spite of the lowest carrier concentration is that the conduction mechanism in the thin films is due to the band-to-band tunneling phenomenon of electrons.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.191.2-191.2
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• 2015

Details of carrier dynamics in self-assembled quantum dots (QDs) with a particular attention to nonradiative processes are not only interesting for fundamental physics, but it is also relevant to performance of optoelectronic devices and the exploitation of nanocrystals in practical applications. In general, the possible processes in such systems can be considered as radiative relaxation, carrier transfer between dots of different dimensions, Auger nonradiactive scattering, thermal escape from the dot, and trapping in surface and/or defects states. Authors of recent studies have proposed a mechanism for the carrier dynamics of time-resolved photoluminescence CdTe (a type II-VI QDs) systems. This mechanism involves the activation of phonons mediated by electron-phonon interactions. Confinement of both electrons and holes is strongly dependent on the thermal escape process, which can include multi-longitudinal optical phonon absorption resulting from carriers trapped in QD surface defects. Furthermore, the discrete quantized energies in the QD density of states (1S, 2S, 1P, etc.) arise mainly from ${\delta}$-functions in the QDs, which are related to different orbitals. Multiple discrete transitions between well separated energy states may play a critical role in carrier dynamics at low temperature when the thermal escape processes is not available. The decay time in QD structures slightly increases with temperature due to the redistribution of the QDs into discrete levels. Among II-VI QDs, wide-gap CdZnTe QD structures characterized by large excitonic binding energies are of great interest because of their potential use in optoelectronic devices that operate in the green spectral range. Furthermore, CdZnTe layers have emerged as excellent candidates for possible fabrication of ferroelectric non-volatile flash memory. In this study, we investigated the optical properties of CdZnTe/ZnTe QDs on Si substrate grown using molecular beam epitaxy. Time-resolved and temperature-dependent PL measurements were carried out in order to investigate the temperature-dependent carrier dynamics and the activation energy of CdZnTe/ZnTe QDs on Si substrate.