• 제목/요약/키워드: carbon substrates

검색결과 523건 처리시간 0.027초

중적외선 영역의 DLC 코팅된 ZnS 기판의 광학 특성 (Optical Properties of DLC-coated ZnS Substrates in the Mid-infrared Region)

  • 권태형;여서영;김창일;남산;권민철;추병욱;백종후
    • 센서학회지
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    • 제28권2호
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    • pp.101-105
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    • 2019
  • ZnS substrates with excellent transmittance in the mid-infrared region ($3-5{\mu}m$) were prepared using hot pressing instead of conventional chemical vapor deposition (CVD). Diamond-like carbon(DLC) was coated on either one or both sides of the ZnS substrates to improve their mechanical properties and transmittance. More specifically DLC was coated using CVD with an Ar and $C_2H_2$ mixed gas, and Ge was used as the bonding layer. During CVD, the bias voltage was fixed to 500 V and analyzed by Fourier transform infrared spectroscopy (FT-IR), nanoindenter, scanning electron microscope and energy dispersive spectrometry. Results of hardness analysis using the nanoindenter, showed that DLC coating increased from 5.9 to 17.7 GPa after deposition. The FT-IR spectroscopy results showed that, in the mid-infrared region ($3-5{\mu}m$), the average transmittance of the samples with DLC coating on one and both sides increased by approximately 6% and approximately 11.2% respectively. In conclusion, the DLC coating improved the durability and transmittance of the ZnS substrates.

Fe-Phthalocyanine을 이용한 carbon nanofiber의 저온 합성 (Low temperature synthesize of carbon nanofibers using Fe-phthalocyanine)

  • 류정탁
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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    • pp.896-899
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    • 2003
  • Using hi plasma and Fe-Phthalocyanine, carbon nanofibers have been synthesized a low temperature. The carbon nanofibers had about In nm diameter and up to $10{\mu}m$ length. These were grown in random orientation. There are two shapes in the CNFs, screw and straight line shapes. Furthermore, we found the selective growth of nanofibers on the scratched substrates.

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고농도로 탄소 도핑된 높은 밀러 지수 GaAs (Heavy Carbon Incorporation into High-Index GaAs)

  • 손창식
    • 한국재료학회지
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    • 제13권11호
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    • pp.717-720
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    • 2003
  • Heavily $p^{ +}$-typed ($10^{20}$ $cm^{-3}$ ) GaAs epilayers have been grown on high-index GaAs substrates with various crystallographic orientations from (100) to (111)A by a low-pressure metalorganic chemical vapor deposition. Carbon (C) tetrabromide (CBr$_4$) was used as a C source. At moderate growth temperatures and high V/III ratios, the hole concentration of C-doped GaAs epilayers shows the crystallographic orientation dependence. The bonding strength of As sites on a growing surface plays an important role in the C incorporation into the high-index GaAs substrates.

저압 MOCVD로 CBr4 가스를 사용하여 탄소 도핑된 GaAs 에피층의 결정학적 방향에 따른 전기적 성질의 의존성 (Crystallographic Orientation Dependence Of Electrical Properties of Carbon-doped GaAs Grown by Low Pressure Metalorganic Chemical Vapor Deposition Using CBr4)

  • 손창식
    • 한국전기전자재료학회논문지
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    • 제15권3호
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    • pp.214-219
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    • 2002
  • In order to elucidate the crystallographic orientation dependence of electrical properties of carbon (C)-doped GaAs epilayers, C incorporation into GaAs epilayers on high-index GaAs substrates with various crystallographic orientations from (100) to (111)A has been performed by a low pressure metalorganic chemical vapor deposition using C tetrabromide ($CBt_4$) as a C source. The hole concentration of C-doped GaAs epilayers rapidly decreases with a hump at (311)A with increasing the offset angle. Although the growth temperature and the V/III ratio are varied, the crystallographic orientation dependence of hole concentration show a same trend. The above behaviors indicate that the bonding strength of As sites on a glowing surface plays an important role in the C incorporation into the high-index GaAs substrates.

금속 기판 위에 성장한 탄소나노튜브 특성에 관한 연구 (Growth of carbon nanotubes on metal substrates using microwave plasma-enhanced chemical vapor deposition)

  • 김현숙;박성렬;양지훈;문상현;박종윤;박래준
    • 한국진공학회지
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    • 제11권4호
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    • pp.256-260
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    • 2002
  • Carbon nanotubes on metal(SUS304) substrates were synthesized by using micro-wave plasma-enhanced chemical vapor deposition at $650^{\circ}C$ with gas mixture CH$_4$(11%) and H$_2$(89%). Their structure was investigated by scanning electron microscopy and transmission electron microscopy. Raman spectroscopy was also used to justify the structure and crystallinity of graphite sheets. High-resolution transmission electron microscopy images clearly showed carbon nanotubes to be multwalled. The measured turn-on field and current density obtained from I-V measurement were 4.4 V/$\mu \textrm{m}$ and $8.4\times10^1\mu\textrm{A}/\textrm{cm}^2$, respectively.

Laser Direct Patterning of Carbon Nanotube Film

  • 윤지욱;조성학;장원석
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.203-203
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    • 2012
  • The SWCNTs network are formed on various plastic substrates such as poly(ethylene terephthalate) (PET), polyimide (PI) and soda lime glass using roll-to-roll printing and spray process. Selective patterning of carbon nanotubes film on transparent substrates was performed using a femtosecond laser. This process has many advantages because it is performed without chemicals and is easily applied to large-area patterning. It could also control the transparency and conductivity of CNT film by selective removal of CNTs. Furthermore, selective cutting of carbon nanotube using a femtosecond laser does not cause any phase change in the CNTs, as usually shown in focused ion beam irradiation of the CNTs. The patterned SWCNT films on transparent substrate can be used electrode layer for touch panels of flexible or flat panel display instead indium tin oxide (ITO) film.

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Tribological Charactristics of Diamond-like Carbon Deposited on Ferrite

  • Nam-Soo Kim;Dae Soon Lim;Heng-Wook Kim;Sang-Ro Lee
    • The Korean Journal of Ceramics
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    • 제1권4호
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    • pp.185-190
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    • 1995
  • Tribological behavior of the diamond-like carbon (DLC) films sliding on floppy disk has been investigated. Hydrogenated DLC films have been prepared by plasma enhanced chemical vapor deposition (PECVD) using methane and hydrogen mixture in different volume ratios on ferrite substrates. DLC films show lower friction coefficients (0.2~0.4) than those of the uncoated ferrite(0.4~0.5). DLC films containing more hydrogen exhibit higher wear resistance. To investigate the roughness effect on wear, the substrates were polished with SiC papers prior to deposition. Too fine or too rough DLC surfaces result in poor wear resistance. Wear resistance of annealed DLC films at higher temperature slightly increases with respect to as-deposited film.

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제조 조건에 따른 질화탄소막의 습도 감지 특성 (Humidity sensing properties of carbon nitride film according to fabrication conditions)

  • 이성필;김정훈;이효웅;이지공
    • 센서학회지
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    • 제14권5호
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    • pp.343-349
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    • 2005
  • Carbon nitride films were deposited on various substrates for humidity sensors with meshed electrode by reactive RF magnetron sputtering system. As the ratio of injected nitrogen was decreased, the sensitivity of sensor was increased. When the ratio of injected nitrogen was $50{\sim}70%$, the sample showed the best linearity. The sensor impedance changed from $95.4{\;}k{\Omega}$ to $2.1{\;}k{\Omega}$ in a relative humidity range of 5 % to 95 %. The humidity sensors based on silicon wafer revealed higher lineality and faster response than those of alumina or quartz substrates. The adsorption saturation time of the sample was about 80 sec, and its desorption time was about 90 sec.

Synthesis of High-quality Graphene by Inductively-coupled Plasma-enhanced Chemical Vapor Deposition

  • Lam, Van Nang;Kumar, Challa Kiran;Park, Nam-Kyu;Arepalli, Vinaya Kumar;Kim, Eui-Tae
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2011년도 추계학술발표대회
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    • pp.16.2-16.2
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    • 2011
  • Graphene has attracted significant attention due to its unique characteristics and promising nanoelectronic device applications. For practical device applications, it is essential to synthesize high-quality and large-area graphene films. Graphene has been synthesized by eloborated mechanical exfoliation of highly oriented pyrolytic graphite, chemical reduction of exfoliated grahene oxide, thermal decomposition of silicon carbide, and chemical vapor deposition (CVD) on metal substrates such as Ni, Cu, Ru etc. The CVD has advantages over some of other methods in terms of mass production on large-areas substrates and it can be easily separated from the metal substrate and transferred to other desired substrates. Especially, plasma-enhanced CVD (PECVD) can be very efficient to synthesize high-quality graphene. Little information is available on the synthesis of graphene by PECVD even though PECVD has been demonstrated to be successful in synthesizing various carbon nanostructures such as carbon nanotubes and nanosheets. In this study, we synthesized graphene on $Ni/SiO_2/Si$ and Cu plate substrates with CH4 diluted in $Ar/H_2$ (10%) by using an inductively-coupled PECVD (ICPCVD). High-quality graphene was synthesized at as low as $700^{\circ}C$ with 600 W of plasma power while graphene layer was not formed without plasma. The growth rate of graphene was so fast that graphene films fully covered on substrate surface just for few seconds $CH_4$ gas supply. The transferred graphene films on glass substrates has a transmittance at 550 nm is higher 94%, indicating 1~3 monolayers of graphene were formed. FETs based on the grapheme films transferred to $Si/SiO_2$ substrates revealed a p-type. We will further discuss the synthesis of graphene and doped graphene by ICPVCD and their characteristics.

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Carbon nanotube based transparent electrodes for flexible displays using liquid crystal devices

  • Shin, Jun-Ho;Lee, H.C.;Lee, J.H.;Park, S.M.;Alegaonkar, P.S.;Yoo, J.B.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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    • pp.897-899
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    • 2007
  • Transparent electrodes for a flexible display based on the liquid crystal (LC) were formed by carbon nanotubes (CNTs) on polyethylene terephthalate (PET) substrates. The thin multi wall carbon nanotubes (t-MWNTs) networks for electrodes were obtained by filtration- transfer method from welldispersed CNTs solution.

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