• Title, Summary, Keyword: carbon nanowires

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Preparation of Carbon Nanotubes and Carbon Nanowires from Methane Pyrolysis over Pd/SPK Catalyst (Pd/SPK 촉매상에서 메탄의 열분해 반응으로부터 탄소 나노튜브 및 탄소 나노선의 제조)

  • Seo, Ho Joon;Kwon, Oh Yun
    • Applied Chemistry for Engineering
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    • v.18 no.1
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    • pp.94-97
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    • 2007
  • Carbon nanotubes and nanowires were prepared by methane pyrolysis over Pd(5)/SPK catalyst by changing oxygen molar ratio in a fixed bed flow reactor under atmospheric condition and also analyzed by SEM and TEM. When the $CH_4/O_2$ molar ratio was 1, carbons were not almost deposited on the catalyst bed support, but when it was 2, carbons were deposited as much as plugging reactor. TEM and SEM images for the deposited carbons showed a number of single-walled carbon nanotubes and carbon nanowires. The growth mechanism of carbon nanotubes produced on the catalyst surface was the tip growth mode. It should be played an important role in carbon nanotubes and nanowires produced on the catalyst bed support to formate the carbon growth velocity vectors and nuclei of ring structure of carbon nanowires. SPK carrier was $N_2$ isotherm of IV type with mesopores, and excellent in the thermal stability.

Nanotechnologies in Displays : TFTs with Carbon Nanotubes and Semiconductor Nanowires.

  • Pribat, Didier;Cojocaru, Costel;Gowtham, M.;Eude, L.;Balan, A.;Bondavalli, P.;Legagneux, P.
    • 한국정보디스플레이학회:학술대회논문집
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    • pp.1245-1248
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    • 2007
  • We propose new approaches to thin film transistor fabrication that use carbon nanotubes and semiconductor nanowires as active elements. These nanomaterials which are essentially studied in the context of the post CMOS era will certainly impact the active matrix display industry in the near future.

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Synthesis of Vertically Aligned SiNW/Carbon Core-shell Nanostructures

  • Kim, Jun-Hui;Kim, Min-Su;Kim, Dong-Hwan
    • Proceedings of the Korean Vacuum Society Conference
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    • pp.488.2-488.2
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    • 2014
  • Carbon-based materials such as carbon nanotubes and graphene have emerged as promising building blocks in applications for nanoelectronics and energy devices due to electrical property, ease of processability, and relatively inert electrochemistry. In recent years, there has been considerable interest in core-shell nanomaterials, in which inorganic nanowires are surrounded by inorganic or organic layers. Especially, carbon encapsulated semiconductor nanowires have been actively investigated by researchers in lithium ion batteries. We report a method to synthesize silicon nanowire (SiNW) core/carbon shell structures by chemical vapor deposition (CVD), using methane (CH4) as a precursor at growth temperature of $1000{\sim}1100^{\circ}C$. Unlike carbon-based materials synthesized via conventional routes, this method is of advantage of metal-catalyst free growth. We characterized these materials with FE-SEM, FE-TEM, and Raman spectroscopy. This would allow us to use these materials for applications ranging from optoelectronics to energy devices such as solar cells and lithium ion batteries.

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Structures of Ultrathin Copper Nanowires Encapsulated in Carbon Nanotubes (탄소나노튜브 속에 성장된 구리 나노와이어의 구조)

  • Choi, Won-Young;Kang, Jeong-Won;Song, Ki-Oh;Hwnang, Ho-Jung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.294-299
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    • 2003
  • We have investigated the structures of copper nanowires encapsulated in carbon nanotubes using a structural optimization process applied to the steepest descent method. The results showed that the stable morphology of the cylindrical ultrathin copper nanowires in carbon nanotubes is multishell packs consisted of coaxial cylindrical shells. As the diameter of copper nanotubes increased, the encapsulated copper nanowires have the face centered cubic structure as the bulk. Both the semiclassical orbits in a circle and the circular rolling of a triangular network can explain the structures of ultrathin multishell copper nanowires encapsulated in carbon nanotubes.

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Hydrogen sensing of Nano thin film and Nanowire structured cupric oxide deposited on SWNTs substrate: A comparison

  • Hoa, Nguyen Duc;Quy, Nguyen Van;O, Dong-Hun;Wei, Li;Jeong, Hyeok;Kim, Do-Jin
    • Proceedings of the Materials Research Society of Korea Conference
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    • pp.52.1-52.1
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    • 2009
  • Cupric oxide (CuO) is a p-type semiconductor with band gap of ~1.7 eV and reported to be suitable for catalysis, lithium-copper oxide electrochemical cells, and gas sensors applications. The nanoparticles, plates and nanowires of CuO were found sensing to NO2, H2S and CO. In this work, we report about the comparison about hydrogen sensing of nano thin film and nanowires structured CuO deposited on single-walled carbon nanotubes (SWNTs). The thin film and nanowires are synthesized by deposition of Cu on different substrate followed by oxidation process. Nano thin films of CuO are deposited on thermally oxidized silicon substrate, whereas nanowires are synthesized by using a porous thin film of SWNTs as substrate. The hydrogen sensing properties of synthesized materials are investigated. The results showed that nanowires cupric oxide deposited on SWNTs showed higher sensitivity to hydrogen than those of nano thin film CuO did.

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Nanocarbon/silver Nanowire Hybrid Flexible Transparent Conducting Film Technology (탄소나노튜브와 은나노와이어 복합 유연투명전극 필름 기술)

  • Han, Joong Tark
    • Journal of the Korean institute of surface engineering
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    • v.49 no.4
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    • pp.323-330
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    • 2016
  • The flexible transparent conducting films (TCFs) are required to realize flexible optoelectronic devices. 1D nanomaterials such as carbon nanotubes (CNTs), metal nanowires are good candidates to replace indium tin oxide that is currently used to fabricate transparent electrode. Particularly, silver nanowires are used to produce flexible TCFs. In this review, we introduce TCF technologies based on silver nanowires/CNTs hybrid structures. CNTs can compromise drawbacks of silver nanowires for applications in high performance TCFs for optoelectronic devices.

Highly Porous Tungsten Oxide Nanowires As Resistive Sensor for Reducing Gases

  • Nguyen, Minh Vuong;Hoang, Nhat Hieu;Jang, Dong-Mi;Jung, Hyuck;Kim, Do-Jin
    • Proceedings of the Materials Research Society of Korea Conference
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    • pp.16.1-16.1
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    • 2011
  • Gas sensor properties of $WO_3$ nanowire structures have been studied. The sensing layer was prepared by deposition of tungsten metal on porous single wall carbon nanotubes followed by thermal oxidation. The morphology and crystalline quality of $WO_3$ material was investigated by SEM, TEM, XRD and Raman analysis. A highly porous $WO_3$ nanowire structure with a mean diameter of 82 nm was obtained. Response to CO, $NH_3$ and $H_2$ gases diluted in air were investigated in the temperature range of $100{\sim}340^{\circ}C$ The sensor exhibited low response to CO gas and quite high response to $NH_3$ and $H_2$ gases. The highest sensitivity was observed at $250^{\circ}C$ for $NH_3$ and $300^{\circ}C$ for $H_2$. The effect of the diameters of $WO_3$ nanowires on the sensor performance was also studied. The $WO_3$ nanowires sensor with diameter of 40 nm showed quite high sensitivity, fast response and recovery times to $H_2$ diluted in dry air. The sensitivity as a function of detecting gas concentrations and gas sensing mechanism was discussed. The effect of dilution carrier gases, dry air and nitrogen, was examined.

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Semiconductor Nanowires;Their Emission Stability and Energy Distribution

  • Yu, Se-Gi;Yi, Whi-Kun;Lee, Sang-Hyun;Heo, Jung-Na;Jeong, Tae-Won;Lee, Jeong-Hee;Lee, Soo-Chang;Kim, J.M.;Lee, Cheol-Jin;Lyu, Seung-Chul;Han, Jae-Hee;Yoo, Ji-Beom
    • 한국정보디스플레이학회:학술대회논문집
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    • pp.1028-1031
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    • 2002
  • Ga-based semiconductor nanowires (GaN, GaP) were synthesized by the reaction of Ga metal and GaN/GaP powder with a $NH_3/Ar$ gas using thermal chemical vapor deposition. The field emission and emission stability under oxygen and argon environments were investigated. Field emission energy distributions of electrons from these nanowires revealed that field emission mechanism of the semiconductor nanowires were different from carbon nanotubes.

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Synthesis of SnO2 nanowires on one-dimensional carbonization cotton fabric

  • Khai, Tran Van;Shim, Kwang-Bo
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.22 no.1
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    • pp.25-28
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    • 2012
  • Tin-oxide ($SnO_2$) nanowires have been synthesized on one-dimensional (1D) carbonization cotton fabric using chemical vapour deposition method. One-dimensional (1D) carbonization cotton fabric has been synthesized from cotton fabric using annealing process in nitrogen gas at $1000^{\circ}C$. The $SnO_2$ nanowires are single-crystalline rutile structures with 20 nm in diameter and 10 ${\mu}m$ in length. Scanning electron microscopy (SEM), x-ray photoelectron spectroscopy, Raman spectroscopy, transmission electron microscopy and photoluminescence (PL) spectroscopy were utilized to characterize the as-synthesized products.

Characteristics of Silicon Carbide Nanowires Synthesized on Porous Body by Carbothermal Reduction

  • Kim, Jung-Hun;Choi, Sung-Churl
    • Journal of the Korean Ceramic Society
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    • v.55 no.3
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    • pp.285-289
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    • 2018
  • We synthesized silicon carbide (${\beta}-SiC$) nanowires with nano-scale diameter (30 - 400 nm) and micro-scale length ($50-200{\mu}m$) on a porous body using low-grade silica and carbon black powder by carbothermal reduction at $1300-1600^{\circ}C$. The SiC nanowires were formed by vapor-liquid-solid deposition with self-evaporated Fe catalysts in low-grade silica. We investigated the characteristics of the SiC nanowires, which were grown on a porous body with Ar flowing in a vacuum furnace. Their structural, optical, and electrical properties were analyzed with X-ray diffraction (XRD), transmission electron microscopy (TEM), and selective area electron diffraction (SAED). We obtained high-quality SiC single crystalline nanowire without stacking faults that may have uses in industrial applications.