• 제목/요약/키워드: carbon nanotube array

검색결과 24건 처리시간 0.021초

Enhanced Electron Emission of Carbon Nanotube Arrays Grown Using the Resist-Protection-assisted Positioning Technique

  • Ryu, Je-Hwang;Kim, Ki-Seo;Yu, Yi-Yin;Lee, Chang-Seok;Lee, Yi-Sang;Jang, Jin;Park, Kyu-Chang
    • Journal of Information Display
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    • 제9권4호
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    • pp.30-34
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    • 2008
  • Field emitter arrays (FEAs) were developed using carbon nanotubes (CNTs) as electron emission sources. The CNTs were grown using a selective-positioning technique with a resist-protection layer. The light emission properties were studied through the electron emission of the CNTs on patterned islands, which were modulated with island diameter and spacing. The electron emission of CNT arrays with $5{\mu}m$ diameters and $10{\mu}m$ heights increased with increased spacing (from $10{\mu}m$ to $40{\mu}m$). The electron emission current of the $40-{\mu}m$-island-spacing sample showed a current density of 1.33 mA/$cm^2$ at E = 11 V/${\mu}m$, and a turn-on field of 7 V/${\mu}m$ at $1{\mu}A$ emission current. Uniform electron emission current and light emission were achieved with $40{\mu}m$ island spacing and $5{\mu}m$ island diameter.

Novel Design of 8T Ternary SRAM for Low Power Sensor System

  • Jihyeong Yun;Sunmean Kim
    • 센서학회지
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    • 제33권3호
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    • pp.152-157
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    • 2024
  • In this study, we propose a novel 8T ternary SRAM that can process three logic values (0, 1, and 2) with only two additional transistors, compared with the conventional 6T binary SRAM. The circuit structure consists of positive and negative ternary inverters (PTI and NTI, respectively) with carbon-nanotube field-effect transistors, replacing conventional cross-coupled inverters. In logic '0' or '2,' the proposed SRAM cell operates the same way as conventional binary SRAM. For logic '1,' it works differently as storage nodes on each side retain voltages of VDD/2 and VDD, respectively, using the subthreshold current of two additional transistors. By applying the ternary system, the data capacity increases exponentially as the number of cells increases compared with the 6T binary SRAM, and the proposed design has an 18.87% data density improvement. In addition, the Synopsys HSPICE simulation validates the reduction in static power consumption by 71.4% in the array system. In addition, the static noise margins are above 222 mV, ensuring the stability of the cell operation when VDD is set to 0.9 V.

Fabrication of Field Emitter Arrays by Transferring Filtered Carbon Nanotubes onto Conducting Substrates

  • Jang, Eun-Soo;Goak, Jung-Choon;Lee, Han-Sung;Lee, Seung-Ho;Lee, Nae-Sung
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 하계학술대회 논문집
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    • pp.311-311
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    • 2009
  • Carbon nanotubes (CNTs) belong to an ideal material for field emitters because of their superior electrical, mechanical, and chemical properties together with unique geometric features. Several applications of CNTs to field emitters have been demonstrated in electron emission devices such as field emission display (FED), backlight unit (BLU), X-ray source, etc. In this study, we fabricated a CNT cathode by using filtration processes. First, an aqueous CNT solution was prepared by ultrasonically dispersing purified single-walled CNTs (SWCNTs) in deionized water with sodium dodecyl sulfate (SDS). The aqueous CNT solution in a milliliter or even several tens of micro-litters was filtered by an alumina membrane through the vacuum filtration, and an ultra-thin CNT film was formed onto the alumina membrane. Thereafter, the alumina membrane was solvated by acetone, and the floating CNT film was easily transferred to indium-tin-oxide (ITO) glass substrate in an area defined as 1 cm with a film mask. The CNT film was subjected to an activation process with an adhesive roller, erecting the CNTs up to serve as electron emitters. In order to measure their luminance characteristics, an ITO-coated glass substrate having phosphor was employed as an anode plate. Our field emitter array (FEA) was fairly transparent unlike conventional FEAs, which enabled light to emit not only through the anode frontside but also through the cathode backside, where luminace on the cathode backside was higher than that on the anode frontside. Futhermore, we added a reflecting metal layer to cathode or anode side to enhance the luminance of light passing through the other side. In one case, the metal layer was formed onto the bottom face of the cathode substrate and reflected the light back so that light passed only through the anode substrate. In the other case, the reflecting layer coated on the anode substrate made all light go only through the cathode substrate. Among the two cases, the latter showed higher luminance than the former. This study will discuss the morphologies and field emission characteristics of CNT emitters according to the experimental parameters in fabricating the lamps emitting light on the both sides or only on the either side.

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CNT 센서 어레이를 위한 신호 검출 시스템 (A Signal Readout System for CNT Sensor Arrays)

  • 신영산;위재경;송인채
    • 대한전자공학회논문지SD
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    • 제48권9호
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    • pp.31-39
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    • 2011
  • 본 논문에서는 Carbon Nanotube(CNT) 센서 어레이를 위한 저 전력, 소 면적의 신호 검출 시스템을 제안한다. 제안된 시스템은 신호 검출회로, 디지털 제어기, UART I/O로 구성된다. 신호 검출회로는 VGA를 공유하는 64개의 transimpedance amplifier(TIA)와 11비트 해상도의 successive approximation register-ADC(SAR-ADC)를 사용하였다. TIA는 센서의 전압 바이어스 및 전류를 증폭하기 위한 active input current mirror(AICM)와 증폭된 전류를 전압으로 변환하는 저항 피드백 방식의 VGA(Variable Gain Amplifier)로 구성되어있다. 이러한 구조는 큰 면적과 많은 전력을 필요로 하는 VGA를 공유하기 때문에 다수의 센서 어레이에 대해 검출 속도의 저하 없이 저 전력, 소 면적으로 신호 검출이 가능하게 한다. SAR-ADC는 저 전력을 위하여 입력 전압 level에 따라 하위 bit의 동작을 생략하는 수정된 알고리즘을 사용하였다. ADC 및 센서의 선택은 UART Protocol 기반의 디지털 제어기에 의해 선택되며, ADC의 data는 UART I/O를 통해 컴퓨터와 같은 단말기를 통해 모니터링 할 수 있다. 신호 검출회로는 0.13${\mu}m$ CMOS 공정으로 설계되었으며 면적은 0.173 $mm^2$이며 640 sample/s의 속도에서 77.06${\mu}W$의 전력을 소모한다. 측정 결과 10nA - 10${\mu}A$의 전류 범위에서 5.3%의 선형성 오차를 가진다. 또한 UART I/O, 디지털 제어기는 0.18${\mu}m$ CMOS 공정을 이용하여 제작하였으며 총면적은 0.251 $mm^2$ 이다.