• Title/Summary/Keyword: carbon nano silicon

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Comparative Evaluation of Manufacturing Properties of Carbon Fiber Reinforced Thermoplastic Polymer (CFRTP) according to Nanofiller Type (나노필러 종류에 따른 열가소성 탄소 섬유강화 복합재료의 제작 물성 비교 평가)

  • Jun Ha Park;Soon Ho Yoon;Minkook Kim
    • Composites Research
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    • v.37 no.3
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    • pp.186-189
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    • 2024
  • This study compared and evaluated the mechanical properties of carbon fiber reinforced thermoplastic polymer (CFRTP) mixed with nanofillers. After mixing various nanofillers such as Multi-wall carbon nanotube (MWCNT), Silicon oxide, Core shell rubber, and Aramid nanofiber with Polyamide 6 (PA6) resin, this is used as a matrix to create a carbon fiber reinforced composite material (CFRP) was manufactured and its physical properties were measured. Depending on the type and mixing ratio of nanofiller, tensile strength, inter-laminar shear strength (ILSS), and Izod impact strength were measured. In terms of tensile strength and impact strength, the highest values were obtained when mixing core shell rubber, however the ILSS was optimal when mixing less than 1 wt.% of silicon oxide.

Synthesis of Silicon Carbide Nano-Powder from a Silicon-Organic Precursor by RF Inductive Thermal Plasma (RF 유도 열플라즈마를 이용한 유기 용매로 부터의 탄화규소 나노 분말 합성)

  • Ko, Sang-Min;Koo, Sang-Man;Kim, Jin-Ho;Cho, Woo-Seok;Hwang, Kwang-Taek
    • Journal of the Korean Ceramic Society
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    • v.49 no.6
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    • pp.523-527
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    • 2012
  • Silicon carbide (SiC) has recently drawn an enormous amount of industrial interest due to its useful mechanical properties, such as its thermal resistance, abrasion resistance and thermal conductivity at high temperatures. In this study, RF thermal plasma (PL-35 Induction Plasma, Tekna CO., Canada) was utilized for the synthesis of high-purity SiC powder from an organic precursor (hexamethyldisilazane, vinyltrimethoxysilane). It was found that the SiC powders obtained by the RF thermal plasma treatment included free carbon and amorphous silica ($SiO_2$). The SiC powders were further purified by a thermal treatment and a HF treatment, resulting in high-purity SiC nano-powder. The particle diameter of the synthesized SiC powder was less than 30 nm. Detailed properties of the microstructure, phase composition, and free carbon content were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), a thermogravimetric (TG) analysis, according to the and Brunauer-Emmett-Teller (BET) specific surface area from N2 isotherms at 77 K.

Competitive Growth of Carbon Nanotubes versus Carbon Nanofibers

  • Kim, Sung-Hoon
    • Journal of the Korean Ceramic Society
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    • v.40 no.12
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    • pp.1150-1153
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    • 2003
  • Carbon nanofilaments were formed on silicon substrate using microwave plasma-enhanced chemical vapor deposition method. The structures of carbon nanofilaments were identified as carbon nanotubes or carbon nanofibers. The formation of bamboo-like carbon nanotubes was initiated by the application of the bias voltage during the plasma reaction. The growth kinetics of bamboo-like carbon nanotubes increased with increasing the bias voltage. The growth direction of bamboo-like carbon nanotubes was vertical to the substrate.

Growth of nickel-catalyzed carbon nanofibers using MPCVD method and their electrical properties

  • Kim, Sung-Hoon
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.14 no.1
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    • pp.1-5
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    • 2004
  • Carbon nanofilaments were formed on silicon substrate via microwave plasma-enhanced chemical vapor deposition method. The structure of carbon nanofilaments was identified as the carbon nanofibers. The extent of carbon nanofibers growth and the diameters of carbon nanofibers increased with increasing the total pressure. The growth direction of carbon nanofibers was horizontal to the substrate. Laterally grown carbon nanofibers showed the semiconductor electrical characteristics.

Control the growth direction of carbon nanofibers under direct current bias voltage applied microwave plasma enhanced chemical vapor deposition system

  • Kim Sung-Hoon
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.15 no.5
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    • pp.198-201
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    • 2005
  • Carbon nanofibers were formed on silicon substrate which was applied by negative direct current (DC) bias voltage using microwave plasma-enhanced chemical vapor deposition method. Formation of carbon nanofibers were varied according to the variation of the applied bias voltage. At -250 V, we found that the growth direction of carbon nanofibers followed the applied direction of the bias voltage. Based on these results, we suggest one of the possible techniques to control the growth direction of the carbon nanofibers.

The geometry change of carbon nanofilaments by SF6 incorporation in a thermal chemical vapor deposition system

  • Kim, Sung-Hoon
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.21 no.3
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    • pp.119-123
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    • 2011
  • Carbon nanotilaments (CNFs) could be synthesized on nickel catalyst layer-deposited silicon oxide substrate using $C_2H_2$ and$H_2$ as source gases under thermal chemical vapor deposition system. By the incorporation of $SF_6$ as a cyclic modulation manner, the geometries of carbon coils-related materials, such as nano-sized coil and wave-like nano-sized coil could be observed on the substrate. The characteristics (formation density and morphology) of as-grown CNFs with or without $SF_6$ incorporation were investigated. Diameter size reduction for the individual CNFs-related shape and the enhancement of the formation density of CNFs-related material could be achieved by the incorporation of $SF_6$ as a cyclic modulation manner. The cause for these results was discussed in association with the slightly increased etching ability by $SF_6$ addition and the sulfur role in SF 6 for the geometry change.

Field emission characteristics of carbon nanfiber bundles

  • Kim, Sung-Hoon
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.14 no.5
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    • pp.211-214
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    • 2004
  • Carbon nanofiber bundles were formed on silicon substrate using microwave plasma-enhanced chemical vapor deposition system. These bundles were vertically well-grown under the high negative bias voltage condition. The bundles were composed of the individual carbon nanofiber having less than 100 nm diameters. Turn-on voltage of the field emission was measured around 0.8 V/$\mu\textrm{m}$. Fowler-Nordheim plot of the measured values confirmed the field emission characteristic of the measured current.

Hydrophobicity and Nanotribological Properties of Silicon Channels coated by Diamond-like Carbon Films

  • Pham, Duc Cuong;Na, Kyung-Hwan;Pham, Van Hung;Yoon, Eui-Sung
    • KSTLE International Journal
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    • v.10 no.1_2
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    • pp.1-5
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    • 2009
  • This paper reports an investigation on nanotribological properties of silicon nanochannels coated by a diamond-like carbon (DLC) film. The nanochannels were fabricated on Si (100) wafers by using photolithography and reactive ion etching (RIE) techniques. The channeled surfaces (Si channels) were then further modified by coating thin DLC film. Water contact angle of the modified and unmodified Si surfaces was examined by an anglemeter using the sessile-drop method. Nanotribological properties, namely friction and adhesion forces, of the Si channels coated with DLC (DLC-coated Si channels) were investigated in comparison with those of the flat Si, DLC-coated flat Si (flat DLC), and Si channels, using an atomic force microscope (AFM). Results showed that the DLC-coated Si channels greatly increased hydrophobicity of silicon surfaces. The DLC coating and Si channels themselves individually reduced adhesion and friction forces of the flat Si. Further, the DLC-coated Si channels exhibited the lowest values of these forces, owing to the combined effect of reduced contact area through the channeling and low surface energy of the DLC. This combined modification could prove a promising method for tribological applications at small scales.

Hydrogen sensing of Nano thin film and Nanowire structured cupric oxide deposited on SWNTs substrate: A comparison

  • Hoa, Nguyen Duc;Quy, Nguyen Van;O, Dong-Hun;Wei, Li;Jeong, Hyeok;Kim, Do-Jin
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2009.05a
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    • pp.52.1-52.1
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    • 2009
  • Cupric oxide (CuO) is a p-type semiconductor with band gap of ~1.7 eV and reported to be suitable for catalysis, lithium-copper oxide electrochemical cells, and gas sensors applications. The nanoparticles, plates and nanowires of CuO were found sensing to NO2, H2S and CO. In this work, we report about the comparison about hydrogen sensing of nano thin film and nanowires structured CuO deposited on single-walled carbon nanotubes (SWNTs). The thin film and nanowires are synthesized by deposition of Cu on different substrate followed by oxidation process. Nano thin films of CuO are deposited on thermally oxidized silicon substrate, whereas nanowires are synthesized by using a porous thin film of SWNTs as substrate. The hydrogen sensing properties of synthesized materials are investigated. The results showed that nanowires cupric oxide deposited on SWNTs showed higher sensitivity to hydrogen than those of nano thin film CuO did.

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Synthesis of SiC Nano-powder from TEOS by RF Induction Thermal Plasma (RF 열플라즈마를 이용한 TEOS로 부터의 SiC 나노분말 합성)

  • Ko, Sang-Min;Koo, Sang-Man;Kim, Jin-Ho;Kim, Ji-Ho;Byeon, Myeong-Seob;Hwang, Kwang-Taek
    • Journal of the Korean Ceramic Society
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    • v.48 no.1
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    • pp.1-5
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    • 2011
  • Silicon carbide (SiC) has recently drawn an enormous industrial interest because of its useful mechanical properties such as thermal resistance, abrasion resistance and thermal conductivity at high temperature. RF Thermal plasma (PL-35 Induction Plasma, Tekna CO., Canada) has been utilized for synthesis of high purity SiC powder from cheap inorganic solution (Tetraethyl Orthosilicate, TEOS). It is found that the powders by thermal plasma consist of SiC with free carbon and amorphous silica ($SiO_2$) and, by thermal treatment and HF treatment, the impurities are driven off resulting high purity SiC nano-powder. The synthesized SiC powder lies below 30 nm and its properties such microstructure, phase composition, specific surface area and free carbon content have been characterized by X-ay diffraction (XRD), field emission scanning electron microscopy (FE-SEM), thermogravimetric (TG) and Brunauer-Emmett-Teller (BET).