• Biomaterials Research
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• v.22 no.4
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• pp.346-351
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• 2018

Background: Carbonate apatite ($CO_3Ap$) and silica-calcium phosphate composite (SCPC) are bone substitutes with good prospect for dental application. SCPC creates a hydroxyapatite surface layer and stimulate bone cell function while, $CO_3Ap$ induce apatite crystal formation with good adaptation providing good seal between cement and the bone. Together, these materials will add favorable properties as a pulp capping material to stimulate mineral barrier and maintain pulp vitality. The aim of this study is to investigate modification of $CO_3Ap$ cement combined with SCPC, later term as $CO_3Ap-SCPC$ cement (CAS) in means of its chemical (Calcium release) and physical properties (setting time, DTS and pH value). Methods: The study consist of three groups; group 1 (100% calcium hydroxide, group 2 $CO_3Ap$ (60% DCPA: 40% vaterite, and group 3 CAS (60% DCPA: 20% vaterite: 20% SCPC. Distilled water was employed as a solution for group 1, and $0.2mol/L\;Na_3PO_4$ used for group 2 and group 3. Samples were evaluated with respect to important properties for pulp capping application such as pH, setting time, mechanical strength and calcium release evaluation. Results: The fastest setting time was in $CO_3Ap$ cement group without SCPC, while the addition of 20% SCPC slightly increase the pH value but did not improved the cement mechanical strength, however, the mechanical strength of both $CO_3Ap$ groups were significantly higher than calcium hydroxide. All three groups released calcium ions and had alkaline pH. Highest pH level, as well as calcium released level, was in the control group. Conclusion: The CAS cement had good mechanical and acceptable chemical properties for pulp capping application compared to calcium hydroxide as a gold standard. However, improvements and in vivo studies are to be carried out with the further development of this material.

• Polymer(Korea)
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• v.29 no.6
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• pp.593-598
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• 2005

This work studied the loading capabilities and release behaviors of poly(ethylene-alt-maleic anhydride) (PEMAh)/poly(4-vinyl pyridine) (P4VP) multilayer films formed by the layer-by-layer(LbL) sequential self-assembly method, using Rodamine 6G(R6G) as an indicator. Thickness of the multilayer, and loading and subsequent release behavior of R6G from the multilayer were studied using UV-visible spectroscopy. The amount of R6G loaded in multilayer film increased linearly with increasing film thickness. pH-Sensitive permeability was observed, where lower pH environments increased both release rate and release amount. By additional assembling of PEMAh/poly(ethyleneimine) (PEI) capping layers on top of (PEMAh/P4VP)n multilayers, the release of R6G was better controlled.

• Progress in Superconductivity and Cryogenics
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• v.6 no.4
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• pp.1-4
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• 2004

Three group samples with difference thickness of $CeO_2$ capping layer deposited by PLD were studied. Among them, one group $CeO_2$ films were deposited on stainless steel tape coated with IBAD- YSZ and $CeO_2$ buffer layer ($CeO_2$/IBAD-YSZ/SS); other two groups of $CeO_2 YSZ Y_2O_3$multi-layer were deposited on NiW substrates for fabrication of YBCO coated conductor through RABiTS approach. The pulsed laser deposition (PLD) and DC magnetron sputtering were employed to deposit these buffer layers. On the top of buffer layer, YBCO film was deposited by PLD. The effect of thickness of $CeO_2$ film on the texture of $CeO_2$ film and critical current density ($J_c$) of YBCO film were analyzed. For the case $CeO_2$ on $CeO_2$/IBAD-YSZ/SS, there was a self-epitaxy effect with the increase of $CeO_2$ film. For $YSZ/Y_2O_3$ NiW which was deposited by PLD or DC magnetron sputtering, there is not self-epitaxy effect. However, the capping layer of $CeO_2$ film deposited by PLD improved the quality of buffer layer for $YSZ/Y_2O_3$ which was deposited by DC magnetron sputtering, therefore increased the $J_c$ of YBCO film.

• Korean Journal of Materials Research
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• v.2 no.3
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• pp.180-190
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• 1992

Some solutions to several major problems in ZMR such as agglomeration of polysilicon, slips and local substrate melting are described. Experiments are performed with varying polysilicon thickness and capping oxide thickness. The aggmeration can be eliminated when nitrogen is introduced at the capping oxide layer-to-polysilicon interface and polysilicon-to-buried oxide layer interface by annealing the SOI samples at $1100^{\circ}$ in $NH_3$ ambient for three hours. The slips and local substrate melting are removed when the back surface of silicon substrate is sandblasted to produce the back surface roughness of about $20{\mu}m$. The subboundary spacing increases with increasing polysilicon thickness and the uniformity of recrystallized SOI film thickness improves with increasing capping oxide thickness, improving the quality of recrystallized SOI film. When the polysilicon thickness is about $1.0{\mu}m$ and the capping oxide thickness is $2.5{\mu}m$, the thickness variation of the recrystallized SOI film is about ${\pm}200{\AA}$ and the subboundary spacing is about $70-120{\mu}m$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.167-170
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• 2002

The influence of Si surface damage on Ni-silicide with TiN Capping layer and the effect of $H_2$ anneal are characterized. Si surface is intentionally damaged using Ar Sputtering. The sheet resistance of NiSi formed on damaged silicon increased rapidly as Ar sputtering time increased. However, the thermal stability of Ni-Si on the damage silicon was more stable than that on at undamaged Si, which means that damaged region retards the formation of NiSi. It was shown that $H_2$ anneal and TiN capping is highly effective in reducing NiSi sheet resistance.

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.308.2-308.2
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• 2007

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.35.1-35.1
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• 2007

• Proceedings of the Korean Vacuum Society Conference
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• 2004.02a
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• pp.172-172
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• 2004

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.2-2
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• 2011

Single-walled carbon nanotubes (SWNTs) have been considered as a promising candidate for nextgeneration electronics due to its extraordinary electrical properties associated with one-dimensional structure. Since diversity in electronic structure depends on geometrical features, the major concern has been focused on obtaining the diameter, chirality, and density controlled SWNTs. Despite huge efforts, the controlled synthesis of SWNTs has not been achieved. There have been various approaches to synthesize controlled SWNTs by preparation of homogeneously sized catalyst because the SWNTs diameter highly depends on catalyst nanoparticles size. In this study, geometrically controlled SWNTs were synthesized using designed catalytic layers: (a) morphologically modified Al2O3 supporting layer (Fe/Al2O3/Si), (b) Mo capping layer (Mo/Fe/Al/Si), and (c) heat-driven diffusion and subsequent evaporation process of Fe catalytic nanoparticles (Al2O3/Fe/Al2O3/Si). These results clearly revealed that (a) the grain diameter and RMS roughness of Al2O3 supporting layer play a key role as a diffusion barrier for obtaining Fe nanoparticles with a uniform and small size, (b) a density and diameter of SWNTs can be simultaneously controlled by adjusting a thickness of Mo capping layer on Fe catalytic layer, and (c) SWNTs diameter was successfully controlled within a few A scale even with its fine distribution. This precise control results in bandgap manipulation of the semiconducting SWNTs, determined by direct comparison of Raman spectra and theory of extended tight binding Kataura plot. We suggest that these results provide a simple and possible way for the direct growth of diameter, density, and bandgap controlled SWNTs by precise controlling the formation of catalytic films, which will be in demand for future electronic applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.288-291
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• 2002

Application of metal silicides such as TiSi$_2$ and CoSi$_2$ as contacts and gate electrodes are being studied. However, TiSi$_2$ due to the linewidth-dependance, and CoSi$_2$ due to the excessive Si consumption during silicidation cannot be applied to the deep-submicron MOSFET device. NiSi shows no such problems and can be formed at the low temperature. But, NiSi shows thermal instability. In this investigation, NiSi was formed with a Ti-capping layer to improve the thermal stability. Ni and Ti films were deposited by the thermal evaporator. The samples were then annealed in the N$_2$ ambient at 300-800$^{\circ}C$ in a RTA (rapid thermal annealing) system. Four point probe, FESEM, and AES were used to study the thermal properties of Ti-capped NiSi layers. The Ti-capped NiSi was stable up to 700$^{\circ}C$ for 100 sec. RTA, while the uncapped NiSi layers showed high sheet resistance after 600$^{\circ}C$. The AES results revealed that the Ni diffusion further into the Si substrate was retarded by the capping layer, resulting in the suppression of agglomeration of NiSi films.