• Asian Journal of Turfgrass Science
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• v.26 no.2
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• pp.129-134
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• 2012

Research was focused on the improvement of poor drainage problems on golf course fairway which had not been performed soil test or properly amended during the course construction. The analysis of the drainage problem basically was caused by a deterioration of soil physical properties by the top layer compaction. The soil hardness reached about 3,000 Kpa around 5~6 cm of soil profile. The slow infiltration speed to subsoil by the compaction was caused directly a poor drainage capacity. However, the properly amended sand soil showed an apparent value of 1,500 Kpa through the subsoil. The water content test showed a similar result that higher rate of 20~30% and ideal rate of 8~12% at poor drainage area and successfully amended area, respectively. However, an imported topsoil media which had higher content of silt and clay from a trans-planted sod had made a heterogeneous soil profile and that caused a poor drain capacity by a low infiltration rate. Those drainage problems triggered to buildup a reduced soil layer by poor soil gas exchange. The soil environment of deoxidation enhanced anaerobic microbial population and induced methane gas build-up to 55 ppm, and that resulted an adverse effect on turf growth by root growth retardation, consequently.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.3
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• pp.41-47
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• 2020

The effect of Co interlayer on the interfacial reliability of SiN_x/Co/Cu thin film structure for advanced Cu interconnects was systematically evaluated by using a double cantilever beam test. The interfacial adhesion energy of the SiN_x/Cu thin film structure was 0.90 J/㎡. This value of the SiN_x/Co/Cu thin film structure increased to 9.59 J/㎡.Measured interfacial adhesion energy of SiN_x/Co/Cu structure was around 10 times higher than SiN_x/Cu structure due to CoSi₂ reaction layer formation at SiN_x/Co interface, which was confirmed by X-ray photoelectron spectroscopy analysis. The interfacial adhesion energy of SiN_x/Co/Cu structure decreased sharply after post-annealing at 200℃ for 24 h due to Co oxidation at SiN_x/Co interface. Therefore, it is required to control the CoO and Co₃O₄ formation during the environmental storage of the SiN_x/Co/Cu thin film to achieve interfacial reliability for advanced Cu interconnections.

• Journal of the Society of Cosmetic Scientists of Korea
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• v.47 no.4
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• pp.297-304
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• 2021

In this study, we prepared a pigmented skin model, KeraSkin-M^TM for the in vitro evaluation of whitening agents. For the purpose of complementing the existing mono-layer cell culture testing method, KeraSkin-M^TM was produced through the co-culture of human skin-derived keratinocytes and melanocytes. The efficacy of four well-known whitening agents (arbutin, ascorbic acid, kojic acid, niacinamide) was evaluated in KeraSkin-M^TM in order to assess its usefulness in assessing whitening efficacy. As a result, it was possible to observe additional details such as the distribution of melanin granules and melanin capping in each skin layer through KeraSkin-M^TM, which was previously difficult to assess in the traditional 2D cell culture system. In addition, quantification through image analysis of KeraSkin-M^TM allowed for a statistical analysis of the whitening effects. These results suggest that the KeraSkin-M^TM can be used as a new evaluation method of evaluating whitening efficacy, as well as complement the traditional total melanin content and tyrosinase inhibition assays.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.1
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• pp.45-50
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• 2014

Effects of wet chemical treatment and thermal cycle conditions on the quantitative interfacial adhesion energy of $Cu/SiN_x$ thin film interfaces were evaluated by 4-point bending test method. The test samples were cleaned by chemical treatment after Cu chemical-mechanical polishing (CMP). The thermal cycle test between Cu and $SiN_x$ capping layer was experimented at the temperature, -45 to $175^{\circ}C$ for 250 cycles. The measured interfacial adhesion energy increased from 10.57 to $14.87J/m^2$ after surface chemical treatment. After 250 thermal cycles, the interfacial adhesion energy decreased to $5.64J/m^2$ and $7.34J/m^2$ for without chemical treatment and with chemical treatment, respectively. The delaminated interfaces were confirmed as $Cu/SiN_x$ interface by using the scanning electron microscope and energy dispersive spectroscopy. From X-ray photoelectron spectroscopy analysis results, the relative Cu oxide amounts between $SiN_x$ and Cu decreased by chemical treatment and increased after thermal cycle. The thermal stress due to the mismatch of thermal expansion coefficient during thermal cycle seemed to weaken the $Cu/SiN_x$ interface adhesion, which led to increased CuO amounts at Cu film surface.

• Korean Journal of Optics and Photonics
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• v.17 no.3
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• pp.278-284
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• 2006

We have fabricated and measured electrooptic modulator using coupled stack InAs/InGaAs quantum dots. The height of the quantum dot is 16 nm and quantum dots are stacked including an InGaAs capping layer. The peak wavelength of photoluminescence is 1260 nm at room temperature and 1158 nm at 12 K. The operation characteristics of the quantum dots show high modulation efficiency of electrooptic modulator at 1550 nm compared to that of existing III-V bulk and MQW type semiconductor. The measured switching voltage ($V\pi$) is 540 and 600 mV, for TE mode and TM mode, respectively. From the results, the modulation efficiency can be determined as 333.3 and $300^{\circ}/V{\cdot}mm$ for TE and TM modes. The results reported here may lead to the design and fabrication of a novel electrooptic modulator with low switching voltage and high efficiency.

• Journal of the Korean Magnetics Society
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• v.10 no.4
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• pp.171-177
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• 2000

Exchange coupling of Co/NiMn bilayers fabricated by RF magnetron sputtering method was studied. We investigated the variation of exchange coupling field (H$\sub$ex/) for different annealing temperature and time. The maximum exchange coupling field was obtained after 13hr annealing at 300 $^{\circ}C$. With respect to deposition sequence, it was demonstrated that NiMn-top bilayers had higher exchange coupling field than NiMn-bottom bilayers. Ta capping layer was shown to be essential in achieving exchange coupling and Auger Electron Spectroscopy (AES) proved that uncapped NiMn/Co bilayers did not have exchange coupling because of oxygen incorporation into film. We also observed the effect of Ta underlayer on exchange coupling. It was found that Ta underlayer had better not be used for attaining higher exchange coupling. XRD analysis showed that Ta underlayer helped bilayers develop texture, but it was not essential to exchange coupling of Co/NiMn bilayers, which is in contrast to NiFe/NiMn system. Furthermore, the NiMn and Co thickness dependence of exchange coupling has been investigated. The exchange coupling strength reached the maximum above 200 ${\AA}$ NiMn thickness and had inversely proportional relation with Co thickness.

• Korean Journal of Optics and Photonics
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• v.30 no.5
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• pp.193-196
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• 2019

The design and control of thermal flow is important for the operation of high-power laser diodes (LDs). It is necessary to analyze and improve the thermal bottleneck near the active layer of an LD. As the error in prediction of the thermal resistance of an LD is large, typically due to the hyperbolic increase and saturation to linear increase of the thermal resistance as a function of thickness, it is helpful to use a simple, modified divergence model for the improvement and optimization of thermal resistance. The characteristics of LDs are described quite well, in that the values for simulated thermal resistance curves and the thermal cross section followed are almost the same as the values from the model function. Also, the thermal-cross-section curve obtained by differentiating the thermal resistance is good for identifying thermal bottlenecks intuitively, and is also fitted quite well by the model proposed for both a typical LD structure and an improved LD with thin capping and high thermal conductivity.