• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• v.9 no.2
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• pp.689-692
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• 2005

Bioelectrical Impedance Analysis(BIA) can measure body water amount and then body fat mass. Locate 4 electrode in palm to measure efficiently and flow current(50kHz, 800uA) in body for measuring voltage and capacitance. And proposed method to measure body fat with hight, weight, age and distinction of sex.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.290-293
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• 1997

In this paper, volume resistivity is studied so that the electrical properties for transformer oil due to the stirring temperature of BTA is investigated. A measurement of volume resistivity using the VMG-1000 highmegohm meter is recorded after 10 minutes when the each voltage, and DC 100[V], 250[V], 500[V] and 1000[V] is applied, according to the step voltage appliaction method. A coaxial cylindrical liquid electrode to measure volume resistivity of specimen is used, and its geometric capacitance is 16[pF].

• Proceedings of the KIEE Conference
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• 2003.07b
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• pp.1285-1287
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• 2003

The aging of the insulation reduces the electrical and mechanical strength of the insulation. At same point, a voltage surge or mechanical shock from a traction motor start will fracture or break down the insulation. To achieve the expected life usually requires extensive laboratory evaluation of the insulation systems and the use of accelerated aging tests. There are several nondestructive test available for checking. the condition of motor insulation, the probable extent of aging, and the rate of which aging is taking place. So the insulation characteristics of stator coil were each analyzed by measurement of dielectric loss($tan{\delta}$), capacitance and partial discharge. The method of diagnosis is able to analyze the aging condition and predict the life of the traction motor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.85-86
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• 2007

A poly(vinylidene fluoride-trifluoroethyene) (P(VDF-TrFE)) copolymer thin film having ${\beta}$ phase was prepared by sol-gel method. The electrical properties of the film were studied to evaluate the possibility for appling to a ferroelectric random access memory. In order to characterize its electrical properties, we produced a MFS (metal-ferroelectric-semiconductor) structure by evaporation of Au electrodes. The C-V (capacitance-voltage) measurement revealed that the Au/P(VDF-TrFE)/Si structure with a 4 wt% film had a memory window width of about 0.5V for a bias voltage sweep of 1V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.240-243
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• 1999

(Sr$\sub$0.85/Ca$\sub$0.15/)TiO$_3$thin films were deposited on Pt-coated TiO$_2$/SiO$_2$/Si wafer by the rf sputtering method. Experiments were conducted to investigate the electrical properties of SCT thin films with various top electrode. C-F and C-V measurements show that SCT thin films annnealed at 600$^{\circ}C$ have a larger capacitance than SCT thin films deposited at 400$^{\circ}C$ , and there is nearly no difference between top electrodes. I-V measurement show that Pt top electrode have a good leakage current density of < 10nA/$\textrm{cm}^2$,. making them suitable for DRAM application.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.194-195
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• 2006

Aluminum oxide films directly grown on n-type 6H-SiC(0001) substrates were fabricated by RF magnetron sputtering system. Metal-insulator-semiconductor(MIS) C-V properties with aluminum oxide thin films showed hysteresis and f1at band voltage shift. The dielectric constant of the film calculated from the capacitance at the accumulation region was about 5. Typical gate leakage current density of film at room temperature was the order of $10^{-9}\;A/cm^2$ at the range of within 2MV/cm. The breakdown did not occur at the film within the measurement range.

• Progress in Medical Physics
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• v.33 no.1
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• pp.1-9
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• 2022

Purpose: To evaluate the effective volume of the Korea Research Institute of Standards and Science free air chamber (KRISS FAC) L1 used for the primary standard device of the low-energy X-ray air kerma. Methods: The mechanical dimensions were measured using a 3-dimensional coordinate measuring machine (3-d CMM, Model UMM 500, Carl Zeiss). The diameter of the diaphragm was measured by a ring gauge calibrator (Model KRISS-DM1, KRISS). The elongation of the collector length due to electric field distortion was determined from the capacitance measurement of the KRISS FAC considering the result of the finite element method (FEM) analysis using the code QuickField v6.4. Results: The measured length of the collector was 15.8003±0.0014 mm with a 68% confidence level (k=1). The aperture diameter of the diaphragm was 10.0021±0.0002 mm (k=1). The mechanical measurement volume of the KRISS FAC L1 was 1.2415±0.0006 cm³ (k=1). The elongated length of the collector due to the electric field distortion was 0.170±0.021 mm. Considering the elongated length, the effective measurement volume of the KRISS FAC L1 was 1.2548±0.0019 cm³(k=1). Conclusions: The effective volume of the KRISS FAC L1 was determined from the mechanically measured value by adding the elongated volume due to the electric field distortion in the FAC. The effective volume will replace the existing mechanically determined volume in establishing and maintaining the primary standard of the low-energy X-ray.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.9
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• pp.55-59
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• 2013

A new method using RF Ids determined from measured S-parameters is proposed to extract the gate-voltage dependent effective carrier velocity of bulk MOSFETs in the saturation region without additional dc Ids measurement data suffering parasitic resistance effect that becomes larger with continuous down-scaling to sub-$0.1{\mu}m$. This method also allows us to extract the carrier velocity in the saturation region without the difficult extraction of bias-dependent parasitic gate-source capacitance and effective channel length. Using the RF technique, the electron velocity overshoot exceeding the bulk saturation velocity is observed in bulk N-MOSFETs with a polysilicon gate length of $0.065{\mu}m$.

• Applied Science and Convergence Technology
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• v.23 no.6
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• pp.357-365
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• 2014

A non-invasive method for ion energy distribution measurement at a RF biased surface is proposed for monitoring the property of ion bombardments in capacitively coupled plasma sources. To obtain the ion energy distribution, the measured electrode voltage is analyzed based on the circuit model which is developed with the linearized sheath capacitance on the assumption that the RF driven sheath behaves like a simple diode for a bias power whose frequency is much lower than the ion plasma frequency. The method is verified by comparing the ion energy distribution function obtained from the proposed model with the experimental result taken from the ion energy analyzer in a dual cathode capacitively coupled plasma source driven by a 100 MHz source power and a 400 kHz bias power.

• Journal of the Korean Society of Industry Convergence
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• v.23 no.4_2
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• pp.693-699
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• 2020

355nm UV pulse laser is irradiated on the surface of polyimide (PI) by LDW (Laser Direct Writing) method to produce a high sensitivity flexible humidity sensor using a simple one-step process. The LDW method continuously investigates 2-D CAD data using a galvano scanner and an F-lens. This method is non-contact, so it minimizes physical strain on the PI. Laser-induced graphene (LIG) produced by lasers has a high surface area due to its high flexibility and numerous pores and oxidizers compared to conductors. For this reason, it is highly useful as a flexible humidity sensor. The humidity sensor produced in this study was attached to the inside of a mask filter, which has become a hot topic recently, and its applicability was confirmed.The measurement of humidity measured the sensitivity, reactivity, stability and recovery behavior of the sensor by measuring changes in capacitance and resistance.