• Structural Monitoring and Maintenance
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• 제3권4호
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• pp.335-347
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• 2016

One of major errors in flow rate measurement for two-phase flow using an Electrical Capacitance Sensor (ECS) concerns sensor sensitivity under temperature raise. The thermal effect on electrical capacitance sensor (ECS) system for air-water two-phase flow monitoring include sensor sensitivity, capacitance measurements, capacitance change and node potential distribution is reported in this paper. The rules of 12-electrode sensor parameters such as capacitance, capacitance change, and change rate of capacitance and sensitivity map the basis of Air-water two-phase flow permittivity distribution and temperature raise are discussed by ANSYS and MATLAB, which are combined to simulate sensor characteristic. The cross-sectional void fraction as a function of temperature is determined from the scripting capabilities in ANSYS simulation. The results show that the temperature raise had a detrimental effect on the electrodes sensitivity and sensitive domain of electrodes. The FE results are in excellent agreement with an experimental result available in the literature, thus validating the accuracy and reliability of the proposed flow rate measurement system.

• Journal of information and communication convergence engineering
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• 제19권4호
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• pp.263-268
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• 2021

Although the compact capacitance model of point tunneling types of tunneling field-effect transistors (TFET) has been proposed, those of line tunneling types of TFETs have not been reported. In this study, a compact capacitance model of an L-shaped TFET (LTFET), a line tunneling type of TFET, is proposed using the previously developed surface potentials and current models of P- and L-type LTFETs. The Verilog-A LTFET model for simulation program with integrated circuit emphasis (SPICE) was also developed to verify the validation of the compact LTFET model including the capacitance model. The SPICE simulation results using the Verilog-A LTFET were compared to those obtained using a technology computer-aided-design (TCAD) device simulator. The current-voltage characteristics and capacitance-voltage characteristics of N and P-LTFETs were consistent for all operational bias. The voltage transfer characteristics and transient response of the inverter circuit comprising N and P-LTFETs in series were verified with the TCAD mixed-mode simulation results.

• 한국정밀공학회지
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• 제20권12호
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• pp.183-190
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• 2003

In this paper, investigated are the machining characteristics such as material removal rate and machining time with respect to discharge area and capacitance in micro electrical discharge machining (MEDM). As discharge area determined by the electrode size and capacitance change, the optimal feedrate to allow the minimum machining time changes. The smaller discharge area is, the lower MRR becomes because of the area effect. As the capacitance increases, MRR also increases. However there is the limit capacitance beyond which the MRR does not increase anymore. As the discharge area increases, the limit capacitance also increases.

• Transactions on Electrical and Electronic Materials
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• 제14권4호
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• pp.177-181
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• 2013

In this paper, silicon solar cells are analyzed regarding power conversion efficiency by changed capacitance in the depletion region. For the capacitance control in the depletion region of silicon solar cell was applied for 10, 20, 40, 80, 160 and 320 Hz frequency band character and alternating current(AC) voltage with square wave of 0.2~1.4 V. Academically, symmetry formation of positive and negative change of the p-n junction is similar to the physical effect of capacitance. According to the experiment result, because input of square wave with alternating current(AC) voltage could be observed to changed capacitance effect by indirectly method through non-linear power conversion (Voltage-Current) output. In addition, when input alternating current(AC) voltage in the silicon solar cell, changed capacitance of depletion region with the forward bias condition and reverse bias condition gave a direct effect to the charge mobility.

• 태양에너지
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• 제2권1호
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• pp.17-23
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• 1982

This paper presents the performance of a Flat-Plate Solar Collector in case of taking into account of the thermal capacitance. The relationships among energy absorption, overall heat loss coefficient and temperature distribution are studied theoretically. And the thermal capacitance of the collector is considered. Also, the results obtained are compared with those of model in which the thermal capacitance is neglected. As the results of this study, the efficiency of the collector having double glazing is higher than the other cases. It is shown that the fluid temperature in the tubes are rising close to linearly. The variations of the outlet temperature of tubes in the model neglecting the effect of thermal capacitance are tend to represent lower slope than that of considering the effect of thermal capacitance.

• Corrosion Science and Technology
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• 제10권1호
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• pp.37-42
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• 2011

Aluminum was electrochemically etched in acid solution and the surface area was magnified by the formation of etch pits. Etched aluminum was covered with a compact and dense dielectric oxide film by anodization and applied to the aluminum electrolytic capacitor electrode. Capacitance of aluminum electrolytic capacitor is closely related with surface area, which depends on size and number of etch pits. Size of etch pits need to be controlled because inside of the pits can be buried by the formation of dielectric oxide film. In this work, the effect of ultrasound pretreatment on the aluminum etch pit formation and capacitance were investigated. Additionally, the relationship between the second etching effect on pit size and capacitance was studied.

• JSTS:Journal of Semiconductor Technology and Science
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• 제7권3호
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• pp.209-213
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• 2007

The MOS gate capacitance model presented here is determined by directly solving the coupled Poisson equations on the poly and silicon sides, and includes the polysilicon (poly) gate depletion effect. Our compact gate capacitance model exhibits an excellent fit with measured data and parameter values extracted from data are physically acceptable. The data are collected from 0.5, 0.35, 0.25 and $0.18{\mu}m$ CMOS technologies.

• Journal of Pharmaceutical Investigation
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• 제24권3호spc1호
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• pp.41-47
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• 1994

The effect of Azone and ethanol on the electrical properties of human and hairless mouse skin was studied and the results were compared. The complex electrical impedance was measured as a function of frequency, and resistance and capacitance were determined from Nyquist plot. After the treatment of human-heat separated epidermis with Azone, contrary to the expectation, resistance increased about 60% and it did not change with time. Capacitance also increased; immediately after the treatment, it was about 110% of pretreatment value and it increased further with time. On the other hand, when hairless mouse skin was treated with Azone, marked changes occured; resistance fell almost to the value of bathing medium itself and capacitance increased to about 200% of its pretreatment value. Similar result were obtained when hairless mouse skin was treated with 100% ethanol. The results suggest that there are differences in the strength of barrier properties of stratum corneum (SC) between human and hairless mouse skin. Overall, the results provide further mechanistic insight into ion conduction through the skin and into the role of SC lipids in skin capacitance.

• 전력전자학회논문지
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• 제15권5호
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• pp.387-393
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• 2010

본 논문에서는 3상 AC/DC/AC PWM 컨버터에서 직류커패시터 용량의 정확한 추정을 위하여 동작온도 변화에 따른 커패시턴스의 변화를 보정하는 방법을 제안한다. 제안된 방법에서는 커패시터의 동작온도를 측정하고 이에 따라 변화하는 커패시터 용량을 상온에서의 값으로 보정한다. 온도 측정을 위해 써미스터를 사용하고 써미스터에 나타나는 전압의 변화로 온도를 감지하여 동작온도에서 추정된 커패시턴스 값을 상온에서의 값으로 환산한다. 동작온도를 고려한 커패시턴스 보정 기법은 실험을 통하여 그 타탕성이 검증된다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.1093-1096
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• 2008

The circuit simulation has been done on the current-programmed AMOLED and shows that the circuit which behaves as a negative capacitance can reduce the effect of parasitic capacitance fixed on the data-line and can accelerate the current programming speed as high as that required in Full HD AMOLED.