• Journal of the Korean institute of surface engineering
• /
• v.54 no.3
• /
• pp.152-157
• /
• 2021

The pseudocapacitor has a high energy density characteristic because it accumulates charges through a paradic redox reaction. However, due to its strong insulation properties, metal hydroxides should be designed as structural systems optimized for charge transfer to support fast electron transport. Also, Nickel material is weak to heat and is easily deformed when used as a cathode material, so stability must be secured. In this study, nickel hydroxide was produced by electrodeposition to secure the stability of nickel. Electrodeposition is a synthetic method suitable for growing optimized nickel hydroxide because it allows fine control. Nickel hydroxide (Ni(OH)₂) is a metal hydroxide used as a pseudocapacitor anode due to its high capacitance, electrical conductivity and resistance. Therefore, in order to determine how Ni(OH)₂ nanosheets are formed and what are the optimization conditions, various measurement methods were used to focus on structural growth of nanosheets produced by electrodeposition.

• Composites Research
• /
• v.34 no.6
• /
• pp.345-349
• /
• 2021

The continued environmental pollution caused by fossil fuel consumption has prompted researchers around the world to develop environmentally friendly energy technologies. Electrochemical energy storage is the significant area of research in this development process, and the research significance of supercapacitors in this field is increasing. Herein, a simple electrodeposition synthetic route was explored to develop the MoP layered cathode material. The layered structure provided a highly ion-accessible surface for smooth and faster ion adsorption/desorption. After Fe was doped into MoP, the morphology of MoP changes and the electrochemical performance was significantly improved. Specific capacitance value of the binder-free FeMoP electrode was found to be 269 F g^-1 at 2 A g^-1 current density in 6 M aqueous KOH electrolyte. After adding Fe to MoP, an additional redox contribution was observed in the redox conversion from Fe³⁺ to Fe²⁺ redox pair, and the charge transfer kinetics of MoP was effectively improved. This research can provide guidance for the development of supercapacitor electrode materials through simple electrodeposition technology.

• Korean Journal of Materials Research
• /
• v.32 no.4
• /
• pp.181-185
• /
• 2022

In this study, phase-pure titanium dioxide TiO₂ ceramics are sintered using standard high-temperature solid-state reaction technique at different temperatures (1,000, 1,100, 1,200, 1,300, 1,400 ℃). The effect of sintering temperature on the densification and impedance properties of TiO₂ ceramics is investigated. The bulk density and average grain size increase with the increase of sintering temperature. Impedance spectroscopy analysis (complex impedance Z^* and complex modulus M^*), performed in a broad frequency range from 100 Hz to 10 MHz, indicates that the TiO₂ ceramics are dielectrically heterogeneous, consisting of grains and grain boundaries. The complex impedance Z^* -plane indicates the resistance of grains of the TiO₂ ceramics increases with increasing sintering temperature, while that of grain boundaries develops in the opposing direction. The complex modulus M^*-plane shows a grain capacitance that seems to be independent of the sintering temperature, while that of the grain boundaries decreases with increasing sintering temperature. These results suggest that different sintering temperatures have effects on the microstructure, leading to changes in the impedance properties of TiO₂ ceramics.

• Electrical & Electronic Materials
• /
• v.16 no.9
• /
• pp.63.2-64
• /
• 2003

Epitaxial yttrium-stabilized HfO$_2$ thin films were deposited on p-type (100) Si substrates by pulsed laser deposition at a relatively lower substrate temperature of 550. Transmission electron microscopy observation revealed a fixed orientation relationship between the epitaxial film and Si; that is, (100)Si.(100)HfO$_2$ and [001]Si/[001]HfO$_2$. The film/Si interface is not atomically flat, suggesting possible interfacial reaction and diffusion, X-ray photoelectron spectrum analysis also revealed the interfacial reaction and diffusion evidenced by Hf silicate and Hf-Si bond formation at the interface. The epitaxial growth of the yttrium stabilized HfO$_2$ thin film on bare Si is via a direct growth mechanism without involoving the reaction between Hf atoms and SiO$_2$ layer. High-frequency capacitance-voltage measurement on an as-grown 40-A yttrium-stabilized HfO$_2$ epitaxial film yielded an dielectric constant of about 14 and equivalent oxide thickness to SiO$_2$ of 12 A. The leakage current density is 7.0${\times}$ 10e-2 A/$\textrm{cm}^2$ at 1V gate bias voltage.

• Journal of the Mineralogical Society of Korea
• /
• v.17 no.2
• /
• pp.157-168
• /
• 2004

The surface chemical properties of aqueous kaolinite and halloysite were studied using a potentiometric titration experiment and a computer program FITEQL3.2. Among the surface complexation models a constant capacitance model was selected for this study. The 2 sites - 3 p $K_{a}$ s model, in which the surfaces were assumed to have tetrahedral and octahedral sites, was reasonable for the description of the experimental data. The surface charges of both minerals were negative above pH of 4. The higher the pH, the lower the proton surface charge densities of both minerals. The ≡ $SiO^{[-10]}$ site played an important role in cation adsorption in acid and neutral pH range; whereas the ≡ Al $O^{[-10]}$ site was in an alkaline pH range. The optimized intrinsic constants of kaolinite, p $K_{a2(Si)}$$^{int}$, p $K_{al(Al)}$$^{int}$ and p $K_{a2(Al)}$$^{int}$ were 4.436, 4.564, and 8.461 respectively, and those of halloysite were 7.852, 3.885, and 7.084, respectively. The total Si and Al surface sites concentrations of kaolinite were 0.215 and 0.148 mM, and those of halloysite were 0.357 and 0.246 mM. The ratio of Si and Al surface site densities ([≡SiOH]:[≡AlOH]) of both minerals was 1 : 0.69. The total surface site density of kaolinite, 3.774 sites/n $m^2$, was 1.6 times larger than that of halloysite, 2.292 sites/n $m^2$./TEX>.

• Journal of the Korean Recycled Construction Resources Institute
• /
• v.10 no.1
• /
• pp.101-110
• /
• 2022

In this study, water content tests were performed on various fresh concretes subjected to different binder compostions to review the estimation errors and reliability of water content test methods. Micro-oven drying method, air-meter method, capacitance method and microwave penetration method were used to estimate water content of fresh concrete. Errors in water content estimation were analyzed by each test method. Regardless of the test method of water content, the estimation error was less than 5 %, and in the case of the test using mortar, the error in the estimation value was relatively large. In addition, based on the test results of water content of various concrete, the probability density function in which the estimation error for each test method becomes the population was analyzed. Water content test methods of fresh concrete which using concrete samples showed high estimate reliability of 97 % within the estimation error range of ± 10 kg/m³. On the other hand, the reliability of water content test method using mortar samples was lower.

• KIEE International Transactions on Electrophysics and Applications
• /
• v.12C no.4
• /
• pp.208-213
• /
• 2002

The present study describe the electrical performance of amorphous T $a_2$ $O_{5-X}$ fabricated on the buffer layers Ti and Ti $O_2$. T $a_2$ $O_{5-X}$ thin films were grown on the Ti and Ti $O_2$ layers as a capacitor layer using reactive sputtering method. The X-ray pattern analysis indicated that the two as-deposited films were amorphous and the amorphous state was kept stable on the RTA(rapid thermal annealing) at even $700^{\circ}C$. Measurements of dielectric properties of the reactive sputtered T $a_2$ $O_{5-X}$ thin films fabricated in two simple MIS(metal insulator semiconductor), structures, (Cu/T $a_2$ $O_{5}$ Ti/Si and CuT $a_2$ $O_{5}$ Ti $O_2$Si) show that the amorphous T $a_2$ $O_{5}$ grown on Ti showed high dielectric constant (23～39) and high leakage current density(10$^{-3}$ ～10$^{-4}$ (A/$\textrm{cm}^2$)), whereas relatively low dielectric constant (～15) and tow leakage current density(10$^{-9}$ ～10$^{-10}$ (A/$\textrm{cm}^2$)) were observed in the amorphous T $a_2$ $O_{5}$ deposited on the Ti $O_2$ layer. The electrical behaviors of the T $a_2$ $O^{5}$ thin films were attributed to the contribution of Ti- $O_2$ and the compositionally gradient Ta-Ti-0, being the low dielectric layer and high leakage current barrier. In additional, The T $a_2$ $O_{5}$ Ti $O_2$ thin films exhibited dominant conduction mechanism contributed by the Poole-Frenkel emission at high electric field. In the case of T $a_2$ $O_{5}$ Ti $O_2$ thin films were related to the diffusion of Ta, Ti and O, followed by the creation of vacancies, in the rapid thermal treated thin films.films.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.31A no.12
• /
• pp.56-63
• /
• 1994

The effects of sulfur treatments on the barrier heithts of Schottky contacts and the interface-state density of metal-insulator-semiconductor (MIS) capacitors on InP have been investigated. Schottky contacts were formed by the evaporation of Al, Au, and Pt on n-InP substrate before and after (NH$_{4}$)$_{2}$S$_{x}$ treatments, respectively. The barrier height of InP Schottky contacts was measured by their current-voltage (I-V) and capacitance-voltage (C_V) characteristics. We observed that the barrier heights of Schottky contacks on bare InP were 0.35~0.45 eV nearly independent of the metal work function, which is known to be due to the surface Fermi level pinning. In the case of sulfur-treated Au/InP ar Pt/InP Schottky diodes, However, the barrier heights were not only increased above 0.7 eV but also highly dependent on the metal work function. We have also investigated effects of (NH$_{4}$)$_{2}$S$_{x}$ treatments on the distribution of interface states in Si$_{3}$N$_{4}$InP MIS diodes where Si$_{3}$N$_{4}$ was provided by plasma enhanced chemical vapor deposition (PECVD). The typical value of interface-state density extracted feom 1 MHz C-V curve of sulfur-treated SiN$_{x}$/InP MIS diodes was found to be the order of 5${\times}10^{10}cm^{2}eV^{1}$. This value is much lower than that of MiS diodes made on bare InP surface. It is certain, therefore, that the (NH$_{4}$)$_{2}$S$_{x}$ treatment is a very powerful tool to enhance the barrier heights of Au/n-InP and Pt/n-InP Schottky contacts and to reduce the density of interface states in SiN$_{x}$/InP MIS diode.

• Journal of Korean Dental Science
• /
• v.11 no.2
• /
• pp.71-81
• /
• 2018

Purpose: The purpose of this study was to investigate the corrosion behaviors of dental implant alloy after microsized surface modification in electrolytes containing Mn ion. Materials and Methods: $Mn-TiO_2$ coatings were prepared on the Ti-6Al-4V alloy for dental implants using a plasma electrolytic oxidation (PEO) method carried out in electrolytes containing different concentrations of Mn, namely, 0%, 5%, and 20%. Potentiodynamic method was employed to examine the corrosion behaviors, and the alternatingcurrent (AC) impedance behaviors were examined in 0.9% NaCl solution at $36.5^{\circ}C{\pm}1.0^{\circ}C$ using a potentiostat and an electrochemical impedance spectroscope. The potentiodynamic test was performed with a scanning rate of $1.667mV\;s^{-1}$ from -1,500 to 2,000 mV. A frequency range of $10^{-1}$ to $10^5Hz$ was used for the electrochemical impedance spectroscopy (EIS) measurements. The amplitude of the AC signal was 10 mV, and 5 points per decade were used. The morphology and structure of the samples were examined using field-emission scanning electron microscopy and thin-film X-ray diffraction. The elemental analysis was performed using energy-dispersive X-ray spectroscopy. Result: The PEO-treated surface exhibited an irregular pore shape, and the pore size and number of the pores increased with an increase in the Mn concentration. For the PEO-treated surface, a higher corrosion current density ($I_{corr}$) and a lower corrosion potential ($E_{corr}$) was obtained as compared to that of the bulk surface. However, the current density in the passive regions ($I_{pass}$) was found to be more stable for the PEO-treated surface than that of the bulk surface. As the Mn concentration increased, the capacitance values of the outer porous layer and the barrier layer decreased, and the polarization resistance of the barrier layers increased. In the case of the Mn/Ca-P coatings, the corroded surface was found to be covered with corrosion products. Conclusion: It is confirmed that corrosion resistance and polarization resistance of PEO-treated alloy increased as Mn content increased, and PEO-treated surface showed lower current density in the passive region.

• Applied Chemistry for Engineering
• /
• v.21 no.6
• /
• pp.689-693
• /
• 2010

When natural rubber dissolved in toluene comes into use as a binder of carbon powder, the volatilization of solvent just after the construction of biosensor brought the mechanical robustness on the paste. This characteristic satisfied the pre-requisite condition for the practical use of carbon paste electrode and a biosensor for the determination of hydrogen peroxide was designed. In order to evaluate its electrochemical qualitative and quantitative behaviors, various electrochemical kinetic parameters of the electrode, e.g. the symmetry factor (${\alpha}$, 0.37), the exchange current density ($i_0$, $0.075mAcm^{-2}$), the capacitance of double layer ($C_d$, $9.7{\times}10^{-3}F$), the time constant (${\tau}_A$, 0.92 s), the maximum current ($i_{max}$, $5.92{\times}10^{-7}Acm^{-2}$), the Michaelis constant ($K_M$, $1.99{\times}10^{-3}M$) and others were investigated. Results show that natural rubber is a promising binder of carbon powder.