• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.10
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• pp.20-26
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• 1993

The base-collector capacitance of an npn bipolar transistor in bipolar or BiCMOS technology has significant influence on the switching performances, and comprises pnjunction component and MOS component. Both components have complicated dependences on the isolation oxide structure, epitaxial doping density, and bias voltage. Analytical/empirical formulas for both components are derived in this paper for a generic isolation structure as a function of epitaxial doping density and bias voltage based on some theoretical understanding and two-dimensional device simulations. These formulas are useful in estimating the effect of device isoation schemes on the switching speed of bipolar transistors.

• Journal of the Korean Electrochemical Society
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• v.6 no.2
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• pp.158-160
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• 2003

We have reported to make nanostructured cobalt oxide electrode that have large capacitance over than 400 F/g (specific capacitance) and good cycleability. But, it had serious demerits of low voltage range under 0.5 V and low power density. Therefore, we need to increase voltage range of cobalt oxide electrode. We report here on the electrochemical properties of sol-gel-derived nanoparticulate cobalt xerogel in 1M KOH solution and aqueous polymeric gel electrolyte. In solution electrolyte, cobalt oxide electrode had over 250 F/g capacitance consisted of EDLC and pseudocapacitance. In gel electrolyte, cobalt oxide electrode had around 100 F/g capacitance. This capacitance was only electric double layer capacitance of active surface area. In solution electrolyte, potassium ion as working ion reacted with both of layers easily. However, In gel electrolyte, reacted with only surface-active layer. Itis very hard to reach resistive layer. So, we have studied on pretreatment of electrode to contain working ions easily. We'll report more details.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.1
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• pp.25-32
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• 1992

In this paper, a method for the calculation of 2-dimensional interconnection capacitance for a multi-interconnection signal line in a dielectric region is presented. The numbers of dielectric layers and signal lines are arbitrary. To calculate the capacitance parameter, Boundary Element Method is used, and the dielectric interface and the surface of lines are divided into subsections. The advantages of BEM are small CPU-time and more exact solution due to the directly calculated values of capacitance only at the boundary of domain.It is adopted that the surface capacitance of each subsection assumed constant. The solution of surface charge density and capacitance parameter are calculated in a given domain.

• Journal of the Korean Wood Science and Technology
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• v.50 no.4
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• pp.219-236
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• 2022

Wood-based nanocomposite electrode materials were synthesized for application in supercapacitors by mixing nanostructured hematite (Fe₂O₃) with highly porous activated carbon (AC) produced from the wood-waste of Pinus roxburghii. The AC was characterized using various instrumental techniques and the results showed admirable electrochemical properties, such as high surface area and reasonable porosity. Firstly, AC was tested as an electrode material for supercapacitors and it showed a specific capacitance of 59.02 Fg^-1 at a current density of 1 Ag^-1, cycle life of 84.2% after 1,000 cycles (at a current density of 3 Ag^-1), and energy density of 5.1 Wh/kg at a power density of 135 Wkg^-1. However, when the AC was composited with different ratios of Fe₂O₃ (1:1, 2:1, and 1:2), there was an overall improvement in its electrochemical performance. Among the 3 ratios, 2:1 (AC:Fe₂O₃) had the best specific capacitance of 102.42 Fg^-1 at 1 Ag^-1, cycle life of 94.4% capacitance after 1,000 cycles (at a current density of 3 Ag^-1), and energy density of 8.34 Wh/kg at a power density of 395.15 Wkg^-1 in 6 M KOH electrolyte in a 3-electrode experimental setup with a high working voltage of 1.55 V. Furthermore, when Fe₂O₃ was doubled, 1:2 (AC:Fe₂O₃), the electrochemical capacitive performance of the electrode twisted and deteriorated due to either the accumulation of Fe₂O₃ particles within the composite or higher bulk resistance value of pure Fe₂O₃.

• Journal of Microbiology and Biotechnology
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• v.21 no.2
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• pp.204-211
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• 2011

To yield high concentrations of protein expressed by genetically modified Escherichia coli, it is important that the bacterial strains are cultivated to high cell density in industrial bioprocesses. Since the expressed target protein is mostly accumulated inside the E. coli cells, the cellular product formation can be directly correlated to the bacterial biomass concentration. The typical way to determine this concentration is to sample offline. Such manual sampling, however, wastes time and is not efficient for acquiring direct feedback to control a fedbatch fermentation. An E. coli K12-derived strain was cultivated to high cell density in a pressurized stirred bioreactor on a pilot scale, by detecting biomass concentration online using a capacitance probe. This E. coli strain was grown in pure minimal medium using two carbon sources (glucose and glycerol). By applying exponential feeding profiles corresponding to a constant specific growth rate, the E. coli culture grew under carbon-limited conditions to minimize overflow metabolites. A high linearity was found between capacitance and biomass concentration, whereby up to 85 g/L dry cell weight was measured. To validate the viability of the culture, the oxygen transfer rate (OTR) was determined online, yielding maximum values of 0.69 mol/l/h and 0.98mol/l/h by using glucose and glycerol as carbon sources, respectively. Consequently, online monitoring of biomass using a capacitance probe provides direct and fast information about the viable E. coli biomass generated under aerobic fermentation conditions at elevated headspace pressures.

• Korean Journal of Materials Research
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• v.17 no.11
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• pp.574-579
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• 2007

Amorphous $BaTi_4O_9$ ($BT_4$) film was deposited on Pt/Si substrate by RF magnetron sputter and their dielectric properties and electrical properties are investigated. A cross sectional SEM image and AFM image of the surface of the amorphous $BT_4$ film deposited at room temperature showed the film was grown well on the substrate. The amorphous $BT_4$ film had a large dielectric constant of 32, which is similar to that of the crystalline $BT_4$ film. The leakage current density of the $BT_4$ film was low and a Poole-Frenkel emission was suggested as the leakage current mechanism. A positive quadratic voltage coefficient of capacitance (VCC) was obtained for the $BT_4$ film with a thickness of <70 nm and it could be due to the free carrier relaxation. However, a negative quadratic VCC was obtained for the films with a thickness ${\geq}96nm$, possibly due to the dipolar relaxation. The 55 nm-thick $BT_4$ film had a high capacitance density of $5.1fF/{\mu}m^2$ with a low leakage current density of $11.6nA/cm^2$ at 2 V. Its quadratic and linear VCCs were $244ppm/V^2$ and -52 ppm/V, respectively, with a low temperature coefficient of capacitance of $961ppm/^{\circ}C$ at 100 kHz. These results confirmed the potential suitability of the amorphous $BT_4$ film for use as a high performance metal-insulator-metal (MIM) capacitor.

• Carbon letters
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• v.25
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• pp.14-24
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• 2018

Electrochemical properties and performance of composites performed by incorporating metal oxide or metal hydroxide on carbon materials based on graphene and carbon nanotube (CNT) were analyzed. From the surface analysis by field emission scanning electron microscopy and field emission transmission electron microscopy, it was confirmed that graphene, CNT and metal materials are well dispersed in the ternary composites. In addition, structural and elemental analyses of the composite were conducted. The electrochemical characteristics of the ternary composites were analyzed by cyclic voltammetry, galvanostatic charge-discharge tests, and electrochemical impedance spectroscopy in 6 M KOH, or $1M\;Na_2SO_4$ electrolyte solution. The highest specific capacitance was $1622F\;g^{-1}$ obtained for NiCo-containing graphene with NiCo ratio of 2 to 1 (GNiCo 2:1) and the GNS/single-walled carbon $nanotubes/Ni(OH)_2$ (20 wt%) composite had the maximum specific capacitance of $1149F\;g^{-1}$. The specific capacitance and rate-capability of the $CNT/MnO_2/reduced$ graphene oxide (RGO) composites were improved as compared to the $MnO_2/RGO$ composites without CNTs. The $MnO_2/RGO$ composite containing 20 wt% CNT with reference to RGO exhibited the best specific capacitance of $208.9F\;g^{-1}$ at a current density of $0.5A\;g^{-1}$ and 77.2% capacitance retention at a current density of $10A\;g^{-1}$.

• Proceedings of the KIEE Conference
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• 2015.07a
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• pp.1140-1140
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• 2015

In this paper, the MIM thin films were deposited on Si substrate by sputtering method. And MIM thin films were annealed at $400{\sim}600^{\circ}C$ using RTA. The capacitance density of MIM thin films were increased with the increase of annealing temperature. The maximum capacitance density of $0.62{\mu}F/cm^2$ was obtained by annealing temperature at $600^{\circ}C$. The voltage dependence of dielectric loss showed about 0.03 in voltage ranges of -10~+10 V.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.9
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• pp.598-601
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• 2015

The $Sr_{0.7}Bi_{2.3}Nb_2O_9(SBN)$ thin films are deposited on Pt electrode($Pt/Ti/SiO_2/Si$) using RF sputtering method at various deposition temperature. The deposition temperature of optimum was $300^{\circ}C$. SBN thin films were annealed at $500{\sim}700^{\circ}C$ using furnace and RTA, respectively. The surface roughness showed about 2.42 nm in annealing temperature($600^{\circ}C$) of furnace. The capacitance density of SBN thin films were increased with the increase of annealing temperature. The maximum capacitance density of $0.7{\mu}F/cm^2$ was obtained by annealing temperature($700^{\circ}C$). The frequency dependence of dielectric loss showed about 0.03 in frequency ranges of 1~1,000 kHz.

• Journal of Sensor Science and Technology
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• v.30 no.2
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• pp.71-75
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• 2021

Recently, transition-metal-based hydroxide materials have attracted significant attention in various electrochemical applications owing to their low cost, high stability, and versatility in composition and morphology. Among these applications, transition-metal-based hydroxides have exhibited significant potential in supercapacitors owing to their multiple redox states that can considerably enhance the supercapacitance performance. In this study, nanostructured Ni-Mn double hydroxide is directly grown on a conductive substrate using an electrodeposition method. Ni-Mn double hydroxide exhibits excellent electrochemical charge-storage properties in a 1 M KOH electrolyte, such as a specific capacitance of 1364 Fg-1 at a current density of 1 mAcm-2 and a capacitance retention of 94% over 3000 charge-discharge cycles at a current density of 10 mAcm-2. The present work demonstrates a scalable, time-saving, and cost-effective approach for the preparation of Ni-Mn double hydroxide with potential application in high-charge-storage kinetics, which can also be extended for other transition-metal-based double hydroxides.