• 제목/요약/키워드: capacitance density

검색결과 396건 처리시간 0.028초

전기 이중층 커패시터를 위한 다공성 탄소나노섬유의 메조 기공 제어 효과 (Mesoporous Control Effect of Porous Carbon Nanofibers for Electrical Double-Layer Capacitors)

  • 조현기;신동요;안효진
    • 한국재료학회지
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    • 제29권3호
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    • pp.167-174
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    • 2019
  • To improve the performance of carbon nanofibers as electrode material in electrical double-layer capacitors (EDLCs), we prepare three types of samples with different pore control by electrospinning. The speciments display different surface structures, melting behavior, and electrochemical performance according to the process. Carbon nanofibers with two complex treatment processes show improved performance over the other samples. The mesoporous carbon nanofibers (sample C), which have the optimal conditions, have a high sepecific surface area of $696m^2g^{-1}$, a high average pore diameter of 6.28 nm, and a high mesopore volume ratio of 87.1%. In addition, the electrochemical properties have a high specific capacitance of $110.1F\;g^{-1}$ at a current density of $0.1A\;g^{-1}$ and an excellent cycling stability of 84.8% after 3,000 cycles at a current density of $0.1A\;g^{-1}$. Thus, we explain the improved electrochemical performance by the higher reaction area due to an increased surface area and a faster diffusion path due to the increased volume fraction of the mesopores. Consequently, the mesoporous carbon nanofibers are demonstrated to be a very promising material for use as electrode materials of high-performance EDLCs.

ZnO@Ni-Co-S Core-Shell Nanorods-Decorated Carbon Fibers as Advanced Electrodes for High-Performance Supercapacitors

  • Sui, Yanwei;Zhang, Man;Hu, Haihua;Zhang, Yuanming;Qi, Jiqiu;Wei, Fuxiang;Meng, Qingkun;He, Yezeng;Ren, Yaojian;Sun, Zhi
    • Nano
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    • 제13권12호
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    • pp.1850148.1-1850148.9
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    • 2018
  • The interconnected three-dimensional Ni-Co-S nanosheets were successfully deposited on ZnO nanorods by a one-step potentiostatic electrodeposition. The Ni-Co-S nanosheets provide a large electrode/electrolyte interfacial area which has adequate electroactive sites for redox reactions. Electrochemical characterization of the ZnO@Ni-Co-S core-shell nanorods presents high specifc capacitance (1302.5 F/g and 1085 F/g at a current density of 1 A/g and 20 A/g), excellent rate capabilities (83.3% retention at 20 A/g) and great cycling stability (65% retention after 5000 cycles at a current density of 30 A/g). The outstanding electrochemical performance of the as-prepared electrode material also can be ascribed to these reasons that the special structure improved electrical conductivity and allowed the fast diffusion of electrolyte ions.

폐 플로랄 폼을 이용한 슈퍼커패시터용 다공성 탄소 폼 제조 및 전기화학 성능 평가 (Preparation and Electrochemical Characterization of Porous Carbon Foam from Waste Floral Foam for Supercapacitors)

  • 이병민;박진주;박상원;윤제문;최재학
    • 한국재료학회지
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    • 제32권9호
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    • pp.369-378
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    • 2022
  • The recycling of solid waste materials to fabricate carbon-based electrode materials is of great interest for low-cost green supercapacitors. In this study, porous carbon foam (PCF) was prepared from waste floral foam (WFF) as an electrode material for supercapacitors. WFF was directly carbonized at various temperatures of 600, 800, and 1,000 ℃ under an inert atmosphere. The WFF-derived PCF (C-WFF) was found to have a specific surface area of 458.99 m2/g with multi-modal pore structures. The supercapacitive behavior of the prepared C-WFF was evaluated using a three-electrode system in a 6 M KOH aqueous electrolyte. As a result, the prepared C-WFF as an active material showed a high specific capacitance of 206 F/g at 1 A/g, a rate capability of 36.4 % at 20 A/g, a specific power density of 2,500 W/kg at an energy density of 2.68 Wh/kg, and a cycle stability of 99.96 % at 20 A/g after 10,000 cycles. These results indicate that the C-WFF prepared from WFF could be a promising candidate as an electrode material for high-performance green supercapacitors.

프라임, 테스트 등급 실리콘 웨이퍼의 표면 결함 특성 (Surface Defect Properties of Prime, Test-Grade Silicon Wafers)

  • 오승환;임현민;이동희;서동혁;김원진;김륜나;김우병
    • 한국재료학회지
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    • 제32권9호
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    • pp.396-402
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    • 2022
  • In this study, surface roughness and interfacial defect characteristics were analyzed after forming a high-k oxide film on the surface of a prime wafer and a test wafer, to study the possibility of improving the quality of the test wafer. As a result of checking the roughness, the deviation in the test after raising the oxide film was 0.1 nm, which was twice as large as that of the Prime. As a result of current-voltage analysis, Prime after PMA was 1.07 × 10 A/cm2 and Test was 5.61 × 10 A/cm2, which was about 5 times lower than Prime. As a result of analyzing the defects inside the oxide film using the capacitance-voltage characteristic, before PMA Prime showed a higher electrical defect of 0.85 × 1012 cm-2 in slow state density and 0.41 × 1013 cm-2 in fixed oxide charge. However, after PMA, it was confirmed that Prime had a lower defect of 4.79 × 1011 cm-2 in slow state density and 1.33 × 1012 cm-2 in fixed oxide charge. The above results confirm the difference in surface roughness and defects between the Test and Prime wafer.

4H-SiC와 산화막 계면에 대한 혼합된 일산화질소 가스를 이용한 산화 후속 열처리 효과 (Effect of High-Temperature Post-Oxidation Annealing in Diluted Nitric Oxide Gas on the SiO2/4H-SiC Interface)

  • 김인규;문정현
    • 한국전기전자재료학회논문지
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    • 제37권1호
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    • pp.101-105
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    • 2024
  • 4H-SiC power metal-oxide-semiconductor field effect transistors (MOSFETs) have been developed to achieve lower specific-on-resistance (Ron,sp), and the gate oxides have been thermally grown. The poor channel mobility resulting from the high interface trap density (Dit) at the SiO2/4H-SiC interface significantly affects the higher switching loss of the power device. Therefore, the development of novel fabrication processes to enhance the quality of the SiO2/4H-SiC interface is required. In this paper, NO post-oxidation annealing (POA) by using the conditions of N2 diluted NO at a high temperature (1,300℃) is proposed to reduce the high interface trap density resulting from thermal oxidation. The NO POA is carried out in various NO ambient (0, 10, 50, and 100% NO mixed with 100, 90, 50, and 0% of high purity N2 gas to achieve the optimized condition while maintaining a high temperature (1,300℃). To confirm the optimized condition of the NO POA, measuring capacitance-voltage (C-V) and current-voltage (I-V), and time-of-flight secondary-ion mass spectrometry (ToF-SIMS) are employed. It is confirmed that the POA condition of 50% NO at 1,300℃ facilitates the equilibrium state of both the oxidation and nitridation at the SiO2/4H-SiC interface, thereby reducing the Dit.

고전압 캐패시터용 ($Sr_{0.50}/$Pb_{0.25}$/$Ba_{0.25}$)$TiO_3$-$Bi_2$$Ti_3O_{9}$ 세라믹의 유전특성 (Dielectric properties of ($Sr_{0.50}Pb_{0.25}Ba_{0.25}$)$TiO_3$-$Bi_2$$Ti_3$$O_{9}$ ceramics for the high-voltage capacitor)

  • 김세일;정장호;이영희;배선기
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1993년도 추계학술대회 논문집
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    • pp.17-20
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    • 1993
  • In this paper, the (1-x)($Sr_{0.50}$$Pb_{0.25}$$Ba_{0.25}$)$TiO_3$-x $Bi_2$$Ti_3$$O_{9}$(x=0,4,6,8[mol.%]) ceramics with paraelectric properties were, fabricated by mixed oxide method. The dielectric and structural properties of ceramics were studied with sintering temperature and addition of $Bi_2Ti_3O_{9}$, and the application for the high - voltage capacitor was investigated. In the specimens with sintering at 1350[$^{\circ}C$], sintered density was showed the highest value of 5.745[g/cm$^3$]. Increasing of sintering temperature, average grain size was increased. The specimen. ($Sr_{0.50}$$Pb_{0.25}$$Ba_{0.25}$)$TiO_3$sintered at 1350[$^{\circ}C$] showed good dielectric properties and breakdown voltage was showed the highest value of 200[kV]. Temperature coefficient of capacitance was stabilized in specimens added $Bi_2Ti_3O_{9}$ Sintered density. dielectric properties and breakdown voltage ware decreased with increasing the contents of $Bi_2Ti_3O_{9}$.

급속열처리산화법으로 형성시킨 $SiO_2$/나노결정 Si의 전기적 특성 연구 (Electrical properties of metal-oxide-semiconductor structures containing Si nanocrystals fabricated by rapid thermal oxidation process)

  • 김용;박경화;정태훈;박홍준;이재열;최원철;김은규
    • 한국진공학회지
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    • 제10권1호
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    • pp.44-50
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    • 2001
  • 전자빔증착법과 이온빔의 도움을 받는 전자빔 증착법(ion beam assisted electron beam deposition; IBAED)법으로 비정질 Si(-200nm) 박막을 p-Si 기판위에 성장하고 이 두 구조를 급속열처리산화(Rapid Thermal Oxidation; RTO)를 시킴으로서 $SiO_2$/나노결정 Si(nanocrystal Si)/p-Si구조를 형성하였다. 그 후 시료 위에 Au 막을 증착함으로서 최종적으로 나노결정이 함유된 MOS(metal-oxide-semiconductor)구조를 완성하였다. 이 MOS구조내의 나노결정 Si의 전하충전 특성을 바이어스 sweep 비율을 변화시키면서 Capacitance-Voltage(C-V) 특성을 측정하여 조사하였다. 전자빔증착시료의 경우에는 $\DeltaV_{FB}$(flatband voltage shift)가 1V 미만의 작은 C-V 이력곡선이 관측된 반면 IBAED 시료의 경우는 $\DeltaV_{FB}$가 22V(2V/s Voltage Sweep비율) 이상인 대단히 큰 C-V 이력곡선이 관측되었다. 전자빔증착중 Ar ion beam을 조사하면 표면 흡착원자이동이 활성화되고 따라서 비정질 Si내에 Si의 핵 생성율이 증가하여 후속 급속열처리산화공정중 이 높은 농도의 핵들이 나노결정 Si으로 자라나게 되고 이렇게 형성된 높은 농도의 나노결정의 전하 충전 및 방전현상이 큰 이력곡선을 나타내는 원인이라고 생각된다. 따라서 IBAED 방법이 고농도의 나노결정 Si을 형성시키는데 유용한 방법이라고 판단된다.

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탄화온도가 상이한 활성탄소 복합제 전극이 전기이중층 케페시터의 층방전 특성에 미치는 영향 (Effect of carbonization temperature of AC/C composite electrode on electro double layer capacitor)

  • 조영근;정두환;김창수;박소진
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1999년도 하계학술대회 논문집 D
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    • pp.1821-1823
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    • 1999
  • Carbon is an attractive material on electro double capacitor which depend on charge storage in the electrode/electrolyte interfacial double layer. Carbonaceous material for double layer capacitor can be obtained from carbon powder, fiber, film and porous carbon sheet. The capacitance of electrodes using an activated carbon was influenced by a filling density of the carbon, thickness and internal resistance of the electrode. In this study. to reduce internal resistance and increase electric conductivity of the electrode. activated carbon/carbon(AC/C) composite electrode was fabricated. The capacitors which have energy densities of 68F/g(at $30^{\circ}C$), 109F/g(at $60^{\circ}C$) and $68F/cm^3$(at $30^{\circ}C$), $111F/cm^3$(at $60^{\circ}C$) were fabricated by using AC/C composite electrodes.

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Ti/SiC(4H) 쇼트키 장벽 다이오드의 전기적 특성 (The electrical properties of a Ti/SiC(4H) sehottky diode)

  • 박국상;김정윤;이기암;장성주
    • 한국결정성장학회지
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    • 제7권3호
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    • pp.487-493
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    • 1997
  • SiC(4H) 결정에 Ti을 열증착하여 Ti/SiC(4H) 쇼트키(Schottky) 장벽 다이오드를 만들었다. SiC(4H)의 주개농도(donor concentration)는 전기용량-전압(C-V) 측정으로부터 $2.0{\times}10^{15}{\textrm}{cm}^{-3}$이었으며, 내부전위(built-in potential)는 0.65 V이었다. 전류-전압(I-V) 특성으로 부터 다이오드의 이상계수(ideally factor)는 1.07이었으며, 역방향 항복전장(breakdown field)은 약 $1.7{\times}10^3V/{\textrm}{cm}$이었다. 상온에서 $140^{\circ}C$까지 온도변화에 따라 측정된 포화전류로 부터 구한 전위장벽(potential barrier)은 0.91 V이었는데, 이는 C-V 특성으로 부터 구한 전위장벽과 거의 같았다.

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질소가 도핑된 그라핀을 이용한 고용량의 조절이 가능한 플렉서블 울트라커페시터 (Flexible, Tunable, and High Capacity Ultracapacitor using Nitron-Doped Graphene)

  • 정형모;신원호;최윤정;강정구;최장욱
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2010년도 추계학술대회 초록집
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    • pp.163.2-163.2
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    • 2010
  • We developed a simple method to synthesis a nitrogen doped graphene, nitrogen plasma treated graphene (NPG) sheets thought nitrogen plasma etching of graphene oxide (GO). X-ray photo electron spectroscopy (XPS) study of NPG sheets treated at various plasma conditions reveal that N-doping is classified to 3 kinds of binding configurations. The nitrogen doping concentration is at least 1.5 at % and up to 3 at% with changing of ratio of nitrogen configuration in NPG. Our group demonstrate ultracapacitor with high capacity and extremely durable using a NPG sheets that are comparable to pristine graphene supercapacitor, and pseudocapacitor using polymer and metal oxide with redox reaction, capacitance that are three-times higher, and a cycle life that are extremely stable. We also realized flexible capacitor by using the paper electrode that are coated by NPG sheets. NPG paper capacitor presented almost same performance compare with NPG on a metal substrate, and durability is much more enhanced than that. To additionally explain that how different kind of atoms in graphene layers can act as the ion absorption sites, we simulated the binding energy between nitrogen in graphene layer and ions in electrolyte. Increasing the energy density and long cycle life of ultracapacitor will enable them to compete with batteries and conventional capacitors in number of applications.

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