• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.480.2-480.2
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• 2014

Electrochemical capacitors have been the most strong energy storage devices due to high power density and long cycle stability. Pristine carbon nanotubes are promising electrode materials for excellent electrical conductivity and high specific surface area in electrochemical capacitor. However, the practical application of pristine carbon nanotubes was limited by the aggregation into bundles due to van der Waals force. In this research, we explained how multi-walled carbon nanotubes (MWCNT) functionalized by carboxyl, sulfonic, and amine groups (CNT-COOH, CNT-SO3H, CNT-NH2) to improve the performances of MWCNT. Functionalized CNTs showed two- to four-fold increase in capacitance over that of pristine CNTs, while maintaining reasonable cyclic stability. But, the CNT-COOH showed the lowest rate capability of 57% compared to 84%, 86% of CNT-SO3H and CNT-NH2. As demonstrated by the spectroscopic analysis, This reseach showed how surface functional group of carbon nanotubes change capacitor performances.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.9
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• pp.764-769
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• 2000

The purpose of this study is to research and develop conducting polymer(CP) composite electrode for supercapacitor. Supercapactior cell of CP composite electrode with 1M LiClO$_4$/PC brings out good capacitor performance below 4V. The radius of semicircle of CP composite cell with PAn composite electrode adding 15Wt% SP270(PAnS15) and PT composite electrode adding 50%wt% SP270(PTS50) was absolutely small. The total resistance of supercapacitor cell mainly depended on internal resistance of the electrode. The discharge capacitance of supercapacitor cell with PTS50(+)/PAnS15(-) in 1st and 20th cycles was 38F/g and 28F/g at current density of 1mA/$\textrm{cm}^2$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.183-184
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• 2005

In this study, our varistors based on M.Matsuoke's composition were fabricated with ZnO nano-powder whose sizes were 50nm and 100nm. Electrical properties of ZnO nano-powder varistors were obtained by capacitance-voltage and frequency-real impedance. nano-powder varistors are indicated the change of the interface defects density $N_t$ at the grain boundaries and the donor concentration $N_d$ in the ZnO grains. Frequency analysis was accomplished to understand the equivalent circuit.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.265-269
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• 1996

In this paper, electric field interference was analyzed in the Printed Circuit Board to restrain the elcctromagnetic wave using Boundary Element Method and Finite Element Method. First, charge density distribution was simulated using Boundary Element Method and the characteristic impedance was caculated to restrain the reflex wave, and mutual capacitance was caculated in the multi-strip line PCB. Finally, electric field was simulated in the variable patterns using Finite Element Method. As a result, the optimal structure and characteristics of strip line was obtained and the imformations about the optimal design pattern could be obtained with the analysing the feild distribution.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.4
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• pp.323-327
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• 2001

The purpose of this study is to research and develop conducting polymer(CP) composite electrode for supercapacitor. The radius of semicircle of CP composite cell with polyaniline(PAn) composite electrode adding 30wt% acetylene black was small. The total resistance of supercapacitor cell mainly depended on internal resistance of he electrode. The discharge capacitance of supercapacitor cell with PAn composite electrode adding 30wt% acetylene black in 1st and 50th cycles was 27F/g and 31F/g at current density of 1mA/$\textrm{cm}^2$, respectively. Supercapacitor cell with PAn composite electrode adding 30wt% acetylene black showed a good cycliability. Supercapacitor cell of CP composite electrode with 1M LiClO$_4$/PC brings out god capacitor performance below 4V.

• Carbon letters
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• v.6 no.2
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• pp.86-88
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• 2005

Mesoporous activated carbon (AC) was prepared from aged petroleum coke through chemical activation. The AC has a specific surface area of 1733 $m^2/g$ and a mean pore diameter of 2.37 nm. The volume fraction of 2 to 4nm pores is 56.74%. At a current density of 10 mA/$cm^2$, a specific capacitance of 240 F/g is achieved representing the use factor of the surface area of 69.2%. And the electrical double layer capacitor (EDLC) based on the AC shows an excellent power performance. This result suggests that the presence of high fraction of mesopores can effectively increase the adsorption efficiency of the specific surface area of the AC and enhance the power performance of EDLC based on the efficient surface area of the AC.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.4
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• pp.373-377
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• 2004

We have investigated the electrical characterization of metal-oxide-semiconductor (MOS) capacitors formed on the inductively coupled plasma (ICP) etch-damaged both n- and p-type 4H-SiC. We found that there was an effect of a sacrificial oxidation treatment on the etch-damaged surfaces. Current-voltage and capacitance-voltage measurements of these MOS capacitors were used and referenced to those of prepared control samples without etch damage. It has been found that a sacrificial oxidation treatment can improve the electrical characteristics of MOS capacitors on etch-damaged 4H-SiC since the effective interface density and fixed oxide charges of etch-damaged samples have been found to increase while the breakdown field strength of the oxide decreased and the barrier height at the SiC-SiO$_2$ interface decreased for MOS capacitors on etch-damaged surfaces.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1988.10a
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• pp.79-81
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• 1988

The capacitance-voltage (C-V) characteristics of poly-Si gate MOS devices fabricated by Low-Pressure Chemical Vapor Deposition (LPCVD) system have been studied. In the case poly-Si gate, work function difference and surface state charge density was found lower than that of Al gate. This fact was identified from the C-V curves that flatband shift was shown small due to the hydrogen gas diffused into oxide in processing of alloy and the annealing effect in processing of poly-Si deposition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.425-428
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• 1999

In this paper, the electrical properties of Pt/YMnO$_3$/Si(100) structures with difference rapid thermal annealing (RTA) treatment were investigated. YMnO$_3$films were obtained without buffer layers, introducing oxygen. A typical value of the dielectric constant was about 20 derived from 1MHz capacitance-voltage (C-V) measurement and the resistivity of the film at the field of 150kV/cm was about 1.34$\times$10$^{12}$ $\Omega$ . cm. The minimum interface state density around midgap was estimated to be about 5$\times$10$^{11}$ cm$^2$. eV.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.5
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• pp.365-370
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• 2000

Schottky contacts on n-In$\_$0.53//Ga$\_$0.47//As have been made by metal deposition on substrates cooled to a temperature of 77K. The current-voltage and capacitance-voltage characteristics showed that the Schottky diodes formed at low temperature had a much improved barrier height compared to those formed at room temperature. The Schottky barrier height ø$\_$B/ was found to be increased from 0.2eV to 0.6eV with Ag metal. The saturation current density of the low temperature diode was about 4 orders smaller than for the room temperature diode. A current transport mechanism dominated by thermionic emission over the barrier for the low temperature diode was found from current-voltage-temperature measurement. Deep level transient spectroscopy studies exhibited a bulk electron trap at E$\_$c/-0.23eV. The low temperature process appears to reduce metal induced surface damage and may form an MIS (metal-insulator-semiconductor)-like structure at the interface.