• 한국재료학회지
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• 제26권10호
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• pp.556-560
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• 2016

Using current-voltage (I-V) and capacitance-voltage (C-V) measurements, the electrical properties of Au and Cu Schottky contacts to n-Ge were comparatively investigated. Lower values of barrier height, ideality factor and series resistance were obtained for the Au contact as compared to the Cu contact. The values of capacitance showed strong dependence on the bias voltage and the frequency. The presence of an inversion layer at the interface might reduce the intercept voltage at the voltage axis, lowering the barrier height for C-V measurements, especially at lower frequencies. In addition, a higher interface state density was observed for the Au contact. The generation of sputter deposition-induced defects might occur more severely for the Au contact; these defects affected both the I-V and C-V characteristics.

• 한국세라믹학회지
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• 제32권10호
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• pp.1111-1116
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• 1995

To use dielectric material of high power multilayer capacitor, the composition of the commercial CaTiO3 was changed to decrease the sintering temperature, and the physical and electrical properties were investigated. Series of experiments showed that CaTiO3 with sintering additives had the highest density, the highest shrinkage, the lowest dielectric constant, the lowest loss factor, and the lowest temperature coefficient of capacitance (TCC). These properties had the constant values at sintering temperature of above 120$0^{\circ}C$.

• Journal of Welding and Joining
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• 제35권2호
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• pp.1-5
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• 2017

Many microelectronic devices are miniaturizing the capacitance density and the size of the capacitor. Along with this miniaturization of electronic circuits, tantalum (Ta) capacitors have been on the market due to its large demands worldwide and advantages such as high volumetric efficiency, low temperature coefficient of capacitance, high stability and reliability. During a tantalum capacitor manufacturing process, arc welding has been used to weld base frame and sub frame. This arc welding may have limitations since the downsizing of the weldment depends on the size of welding electrode and the contact time may prevent from improving productivity. Therefore, to solve these problems, this study applies laser spot welding to weld nickel (Ni) and Au-Sn-Ni alloy using CW IR fiber laser with lap joint geometry. All laser parameters are fixed and the only control variable is laser irradiance time. Four different shapes, such as no melting upper workpiece, asymmetric spherical-shaped weldment, symmetric weldment, and, excessive weldment, are observed. This shape may be due to different temperature distribution and flow pattern during the laser spot cutting.

• Carbon letters
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• 제18권
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• pp.43-48
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• 2016

Sulphonated polysulphone (SPS) has been synthesized and subsequently applied as binder for graphene oxide (GO)-based electrodes for development of electrochemical supercapacitors. Electrochemical performance of the electrode was investigated using cyclic voltammetry in 1M Na₂SO₄ and 1M KOH solution. The fabricated supercapacitors gave a specific capacitance of 161.6 and 216.8 F/g with 215.4 W/kg and 450 W/kg of power density, in 1M Na₂SO₄ and 1M KOH solutions, respectively. This suggests that KOH is a better electrolyte than Na₂SO₄ for studying the electrochemical behavior of electroactive material, and also suggests SPS is a good binder for fabrication of a GO based electrode.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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• pp.91-94
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• 2003

The purpose of this project is to research and development of thin film supercapacitor with conducting polymer composite electrodes and polymer electrolyte which have high energy density for thin film supercapacitor. We investigated cyclic voltammetry and charge/discharge cycling of PFPT-flyash electrodes. The first discharge capacity of PFPT-flyash electrode with 40wt.% flyash was 24F/g, while that of PFPT-VOflyash electrode with 40wt.% VOflyash was 32F/g. The capacitance of PFPT-VOflyash composite film with polymer electrolyte was 32 F/g at 1st and 20th cycle, respectively. The capacitance of PFPT-VOflyash/Li cell with 40 wt% VOflyash was 141 F/g at 8th cycle.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.487-490
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• 2000

The purpose of this study is to research and develop conducting polymer(CP) composite electrode for supercapacitor. Electrochemical capacitor(supercapacitor) cell of CP composite electrode with 1M LiClO$_4$PC bring out good capacitor performance below 4V. The radius of semicircle of CP composite cell with PAn composite electrode adding l5wt%SP270(PAnS15) and PT composite electrode adding 50wt%SP270 (PTS50) was absolutely small. The total resistance of supercapacitor cell mainly depended on internal resistance of the electrode. The discharge capacitance of supercapacitor cell with PTS50(+)/PAnS15(-) in 1st and 20th cycles was 38F/g and 28F/g at current density of 1mA/cm$^2$. Supercapacitor cell with PTS50(+)/PAnS15(-) showed good capacitance and stability with cycling.

• JSTS:Journal of Semiconductor Technology and Science
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• 제15권5호
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• pp.497-503
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• 2015

It is essential to acquire an accurate and simple technique for extracting the interface trap density ($D_{it}$) in order to characterize the normally-off gate-recessed AlGaN/GaN hetero field-effect transistors (HFETs) because they can undergo interface trap generation induced by the etch damage in each interfacial layer provoking the degradation of device performance as well as serious instability. Here, the frequency-dependent capacitance-voltage (C-V) method (FDCM) is proposed as a simple and fast technique for extracting $D_{it}$ and demonstrated in normally-off gate-recessed AlGaN/GaN HFETs. The FDCM is found to be not only simpler than the conductance method along with the same precision, but also much useful for a simple C-V model for AlGaN/GaN HFETs because it identifies frequency-independent and bias-dependent capacitance components.

• KIEE International Transaction on Electrical Machinery and Energy Conversion Systems
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• 제11B권4호
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• pp.180-184
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• 2001

The high operation frequency mainly reduces transformer volume in the power supply. A high frequency and high voltage pulse transformer is designed, fabricated, and tested. Switching frequency of the transformer is 100 kHz. Input and output voltages of the transformer are 250 V and 4 kV, respectively. Normal operation power of the transformer is 3 kW. Maximum volume of the transformer is 400 $cm^3$. The power density is thus 7.5 W/$cm^3$. The transformer will be installed in a metal box that has nominal operation temperature of 85 degree centigrade. The transformer and other high voltage components in the box will be molded with Silicon RTV(Room Temperature Vulcaniza) that has a very low thermal conductivity. Procedure of design and test results are discussed. Analytical as well as experimental results of varous paramters such as transformer loss, leakage inductance, distributed capacitance are also discussed. In addition, thermal analysis results from ANSYS code for three different operation conditions are discussed.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1988년도 추계학술대회 논문집 학회본부
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• pp.189-192
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• 1988

Nitrided oxides have been investigated recently for application as a replacement for thermally grown $SiO_2$ in MIS devices. In this paper, thin oxides were nitrided in $N_2$ Plasma ambient. With the measurement of the equivalent paralled conductance and capacitance by the using coductance technique, the characterization of Si-SiON interface is developed. The interface state density of Si-SiON is obtained by $1{\times}10^{11}{\sim}9{\times}10^{11}(eV^{-1}Cm^{-2})$. After${\pm}$B-T stress is performed on the sample, the interface state density gets increased.

• 대한전자공학회논문지
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• 제26권6호
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• pp.124-130
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• 1989

ITIC를 중심으로 고밀도 DRAM을 위한 획기적인 밀도 향상을 기할 수 있는 공정과정과 회로디자인의 기술 혁신에 대하여 지다이너 입장에서 논의하였다. 여기서 개발한 TETC라 부르는 DRAM은 trench 기술과 SEG기술을 이용하였는데 $n^+-polysilycon$인 storage 전극과 $n^+-source$ 전극이 self-con-tact되고 soft error 를 극복할 만큼 충분히 큰 정전용량을 갖으므로 절연 영역을 따라서 만든 수직의 캐패시터를 이용함으로써 셀 크기를 기존의 BSE cell구조에 비하여 약 30% 감소되었다.