• Bulletin of the Korean Chemical Society
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• 제34권8호
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• pp.2343-2347
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• 2013

In this work, manganese dioxide ($Mn_3O_4$)/carbon black (CB) composites (Mn-CBs) were prepared by an in situ coating method as electrical fillers and the effect of the Mn-CBs on the electrical performance of activated carbon (AC)-based electrodes was investigated. Structural features of Mn-CBs produced via in situ coating using a $KMnO_4$ solution were confirmed by XRD and TEM images. The electrical performances, including cv curves, charge-discharge behaviors, and specific capacitance of the ACs/Mn-CBs, were determined by cyclic voltammograms. It was found that the composites of $Mn_3O_4$ and CBs were successfully formed by in situ coating method. ACs/Mn-CBs showed higher electrical performance than that of AC electrodes fabricated with conventional CBs due to the pesudocapacitance reaction of manganese oxides in the aqueous electrolyte. Consequently, it is anticipated that the incorporation of $Mn_3O_4$ into CBs could facilitate the utilization of CBs as electrical filler, leading to enhanced electrochemical performance of AC electrodes for supercapacitors.

• 전기학회논문지
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• 제67권6호
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• pp.799-803
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• 2018

We demonstrated memory thin-film transistors (MTFTs) with organic ferroelectric polymer poly(vinylidene fluoride-co-trifluoroethylene) and an amorphous oxide semiconducting indium gallium zinc oxide channel on the elastomeric substrate. The dielectric constant for the P(VDF-TrFE) thin film prepared on the elastomeric substrate was calculated to be 10 at a high frequency of 1 MHz. The voltage-dependent capacitance variations showed typical butterfly-shaped hysteresis behaviors owing to the polarization reversal in the film. The carrier mobility and memory on/off ratio of the MTFTs showed $15cm^2V^{-1}s^{-1}$ and $10^6$, respectively. This result indicates that the P(VDF-TrFE) film prepared on the elastomeric substrate exhibits ferroelectric natures. The fabricated MTFTs exhibited sufficiently encouraging device characteristics even on the elastomeric substrate to realize mechanically stretchable nonvolatile memory devices.

• Journal of Electrochemical Science and Technology
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• 제15권2호
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• pp.220-241
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• 2024

Due to its unique advantages, electrochemical machining (ECM) is playing an increasingly significant role in the manufacture of difficult-to-machine materials. Most of the current ECM research is conducted at room temperature, with studies on ECM in a cryogenic environment not having been reported to date. This study is focused on the electrochemical dissolution characteristics of typical iron and nickel base alloys in NaNO₃ solution at low temperature (-10℃). The polarization behaviors and passive film properties were studied by various electrochemical test methods. The results indicated that a higher voltage is required for decomposition and more pronounced pitting of their structures occurs in the passive zone in a cryogenic environment. A more in-depth study of the composition and structure of the passive films by X-ray photoelectron spectroscopy and electrochemical impedance spectroscopy showed that the passive films of the alloys are modified at low temperature, and their capacitance characteristics are more prominent, which makes corrosion of the alloys more likely to occur uniformly. These modified passive films have a huge impact on the surface morphologies of the alloys, with non-uniform corrosion suppressed and an improvement in their surface finish, indicating that lowering the temperature improves the localization of ECM. Together with the cryogenic impact of electron energy state compression, the accuracy of ECM can be further improved.

• 공업화학
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• 제21권6호
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• pp.689-693
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• 2010

톨루엔에 녹인 천연고무를 탄소가루의 결합재로 사용하여 바이오센서를 제작하였을 때, 반죽은 용매가 증발한 후 기계적 물성을 보였다. 이 특성은 탄소반죽전극 실용화의 선행 조건을 만족시키는 것으로, 이 특성의 활용성을 살펴보기 위하여 과산화수소 정량을 위한 바이오센서를 제작하고, 그것의 전기화학적인 정량 및 정성적 특성을 파악하기 위하여 여러 가지 속도론적 파라메타, 즉 대칭인자(0.37), 교환전류밀도($i_0$, $0.075mAcm^{-2}$), 이중층의 축전용량($C_d$, $9.7{\times}10^{-3}F$), 시간상수(${\tau}_A$, 0.92 s), 최대전류($i_{max}$, $5.92{\times}10^{-7}Acm^{-2}$), Michaelis 상수($K_M$, $1.99{\times}10^{-3}M$) 및 기타 상수들을 도출하였다. 이 실험적 결과는 천연고무가 탄소가루의 결합재로 활용될 수 있음을 보여 주었다.

• 폴리머
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• 제36권6호
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• pp.739-744
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• 2012

본 연구에서는 합성한 styrene-acrylonitrile(SAN) 전구체를 기반으로 한 탄소를 제조하였다. 그 제조된 탄소는 화학적 환원법으로 활성화하였고, 그 활성화된 SAN 기반 탄소를 A-SAN이라 명명하였다. 전기이중층 커패시터의 전극용 A-SAN 기반 탄소의 표면 특성과 전기화학적 특성에 있어서 활성화 온도에 의한 효과를 확인하기 위해 다양한 온도에서 활성화를 진행하였다. A-SAN의 특성분석을 위해 X-선 회절분석법(XRD), 주사전자현미경(SEM) 그리고 비표면적 장치에 의해 조사되었다. 또한 전기화학적 거동은 순환전류전압과 정전류 충방전법으로 측정하였다. 그 실험 결과로부터, A-SAN 700이 우수한 전기화학적 특성과 가장 높은 비축전용량 값을 보였지만, 활성화 온도가 $700^{\circ}C$가 넘으면 이러한 특성들은 감소했다. 이것은 $700^{\circ}C$ 이상의 온도에서의 활성화가 마이크로 기공 구조의 변형을 야기하기 때문인 것으로 사료된다.

• 한국전기전자재료학회논문지
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• 제23권3호
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• pp.216-221
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• 2010

Employing statistical design of experiments, the difference in doping behaviors of rare-earth ions and their effects on the dielectric property and microstructure of $BaTiO_3$-MgO-$MnO_2$-($Ba_{0.4}Ca_{0.6}$) $SiO_3-Re_2O_3$ (Re = $Y_2O_3$, $Er_2O_3$) system were investigated. Through the statistical analysis we have found that the amount of $Re_2O_3$ are significantly affecting on the dielectric properties. The $Re_2O_3$ improved the dielectric constant, dielectric loss and R*C constant, so the appropriate contents of $Y_2O_3$ and $Er_2O_3$ were 0.8 ~ 1.2 mol% and 0.8 ~ 1.3 mol%, respectively. The MLCC(mutilayer chip capacitor) with $2.0{\times}1.2{\times}1.2mm$ size and 475 nF was also suited for X7R with the above composition. It showed that the dielectric constant and RC constant were 2,839 and 3,675 ${\Omega}F$, respectively in the sintering condition at $1250^{\circ}C$ in $Po_2$ $10^{-7}$ Mpa.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
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• pp.157-160
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• 2004

Ferroelectric $(Ba_xSr_{1-x})TiO_3$ (BST) thin films have been deposited on (001) MgO single crystals by a pulsed laser deposition (PLD) method. The structure of deposited BST thin films were investigated by an x-ray diffractometer. Calculated c-axis lattice parameters of the BST films exhibit a strong lattice distortion, which was not observed in ceramic BST at room temperature. This lattice distortion of BST has been attributed to strains caused by lattice constant difference between film and substrate, oxygen vacancies in BST film, and thermal expansion difference between film and substrate. Ferroelectric properties at 10 GHz have been measured using a HP 8510C vector network analyzer. Dielectric properties, capacitance tunability and quality factor, of the interdigitaed capacitors fabricated on BST films were calculated from the measured s-parameters. Two distinct behaviors in structural, opitical, and microwave properties of BST films were observed; below and above 200 mTorr of oxygen pressure in the deposition chmber.

• 한국재료학회지
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• 제11권1호
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• pp.48-54
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• 2001

고순도알루미늄 유전체의 내부표면적을 증가시키기 위하여 1M의 염산 에칭용액에 첨가제를 사용했을 때 나타나는 에칭특성의 변화를 조사하였다. 염산용액에 에틸렌글리콜이 첨가된 혼합용액에서 에칭을 실시했을 경우 알루미늄 기지 표면에 미세하고 균일한 에치피트가 형성되어 표면적 증가 효과가 크게 나타났으며, 또한 양극 산화 후 측정된 정전용량의 결과에서도 에틸렌 글리콜이 첨가된 에칭액에서 제조된 유전체는 표면적 증가에 의한 높은 정전용량 값을 나타냈다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.280-280
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• 2010

Semiconductor quantum dots are of great interest for both fundamental research and industrial applications due to their unique size dependant properties. The most promising application of colloidal semiconductor nanocrystals (quantum dots or QDs) is probably as emitters in biomedical labeling, LEDs, lasers etc. As compared to II-VI quantum dots, III-V have attracted greater interest owing to their less ionic lattice, larger exciton diameters and reduced toxicity. Among the III-V semiconductor quantum dots, Indium Phosphide (InP) is a popular material due to its bulk band gap of 1.35 (eV) which is responsible for the photoluminescence emission wavelength ranging from blue to near infrared with change in size of QDs. Nevertheless, in recent years, the exact type of collective properties that arise when semiconductor quantum dots (QDs) are assembled into two- or three-dimensional arrays has drawn much interest. The term "uantum dot solids" is used to indicate three-dimensional assemblies of semiconductor QDs. The optoelectronic properties of the quantum dot solids are known to depend on the electronic structure of the individual quantum dot building blocks and on their electronic interactions. This paper reports an efficient and rapid method to produce highly luminescent and monodisperse quantum dots solution and solid through fabrication of InP thin films. By varying the molar concentration of Indium to Ligand, QDs of different size were prepared. The absorption and emission behaviors were also studied. Similar measurements were also performed on InP quantum dot solid by fabricating InP thin films. The optical properties of the thin films are measured at different curing temperatures which show a blue shift with increase in temperature. The dielectric properties of the thin films were also investigated by Capacitance-voltage(C-V) measurements in a metal-insulator-semiconductor (MIS) device.

• Korean Chemical Engineering Research
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• 제52권1호
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• pp.52-57
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• 2014

본 연구에서는 낮은 사이클 안정성을 갖는 MCMB의 단점을 향상시키기 위하여 높은 사이클 안정성과 부피팽창이 없는 장점을 갖는 물질인 $Li_4Ti_5O_{12}$를 코팅하여 core-shell 구조의 $MCMB/Li_4Ti_5O_{12}$를 합성하고 $MCMB/Li_4Ti_5O_{12}$를 음극으로, $LiMn_2O_4$, Active carbon fiber를 양극으로 사용하여 단위 셀을 제조하였다. $LiPF_6$ 염과 EC/DMC/EMC 용매를 전해질로 사용하여 제조한 하이브리드 커패시터 단위 셀로 충방전, 사이클, 순환전압전류, 임피던스 테스트를 진행하여 전기화학적 특성을 평가한 결과, MCMB-$Li_4Ti_5O_{12}/LiMn_2O_4$ 전극을 사용한 하이브리드 커패시터가 MCMB 전극의 하이브리드 커패시터 보다 좋은 충/방전 성능을 보였고, 67 Wh/kg, 781 W/kg의 에너지밀도와 출력밀도를 나타내었다.