• Journal of the Korea Academia-Industrial cooperation Society
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• v.14 no.11
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• pp.5377-5384
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• 2013

This paper presents the effects of the tube materials and corrosion on the heat transfer performance of double-tube heat exchangers for the development of heat exchangers using deep sea water. Heat exchangers made of titanium, aluminum. stainless steel, iron, copper, and aluminum with electro-deposition coatings(Carbon black_$15{\mu}m$, Carbon black_$150{\mu}m$) were tested. Also, the heat transfer rate of each heat exchanger was calculated by using EES program. For the acceleration of corrosion by sea water, the temperature of sea water $70^{\circ}C$ and the concentration of salt 3.5% were considered. And the specimens were immersed in sea water during 6 weeks. From the above experiment and analysis, aluminum with electro-deposition coating(Carbon black_$150{\mu}m$) can be considered the most promising candidate for the replacement of titanium heat exchanger.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.69-69
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• 2017

For several decades, industrial processes consume a huge amount of raw water for various objects that consequently results in the generation of large amounts of wastewater. There effluents are mainly treated by conventional technologies such are aerobic, anaerobic treatment and chemical coagulation. But, there processes are not suitable for eliminating all hazardous chemical compounds form wastewater and generate a large amount of toxic sludge. Therefore, other processes have been studied and applied together with these techniques to enhance purification results. These techniques include photocatalysis, absorption, advanced oxidation processes, and ozonation, but also have their own drawbacks. In recent years, electrochemical techniques have received attention as wastewater treatment process that show higher purification results and low toxic sludge. There are many kinds of electrode materials for electrochemical process, among them, boron doped diamond (BDD) attracts attention due to good chemical and electrochemical stability, long lifetime and wide potential window that necessary properties for anode electrode. So, there are many researches about high quality BDD, among them, researches are focused BDD on Si substrate. But, Si substrate is hard to apply electrode application due to the brittleness and low life time. And other substrates are also not suitable for wastewater treatment electrode due to high cost. To solve these problems, Ti has been candidate as substrate in consideration of cost and properties. But there are critical issues about adhesion that must be overcome to apply Ti as substrate. In this study, to overcome this problem, TiN interlayer is introduced between BDD and Ti substrate. TiN has higher electrical and thermal conductivity, melting point, and similar crystalline structure with diamond. The TiN interlayer was deposited by reactive DC magnetron sputtering (DCMS) with thickness of 50 nm, $1{\mu}m$. The microstructure of BDD films with TiN interlayer were estimated by FE-SEM and XRD. There are no significant differences in surface grain size despite of various interlayer. In wastewater treatment results, the BDD electrode with TiN (50nm) showed the highest electrolysis speed at livestock wastewater treatment experiments. It is thought to be that TiN with thickness of 50 nm successfully suppressed formation of TiC that harmful to adhesion. And TiN with thickness of $1{\mu}m$ cannot suppress TiC formation.

• Journal of Chest Surgery
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• v.25 no.12
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• pp.1383-1390
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• 1992

This is the result of the annual statistic analysis of thoracic and cardiovascular surgical cases in 1991, Korea. 14,715 cases of surgery[thoracic 8,995/cardiovascular 5,720] were done by 53 institutes replied. The order of frequency of cell type in primary lung cancer was squamous [62.3%] / adeno [23.9%] / small [6.4%] / adenosquamous [3.0%], and in mediastinal tumor, neurogenic[27.l%] / thymoma [27.1%] / teratoma[26.4%] / congenital cystic[12.0%]. Surgery for tuberculosis was decreased to 15.8% of overall infectious disease from the recent 6 year`s average 35.7%. In general thoracic surgery, the single most frequent operation was closed thoracostomy[4,047 cases] for pleural pathology. The ratio of congenital to acquired heart disease was 2:1, and acyanotic to cyanotic was 3:1. The order of frequency of congenital acyanotic heart disease was VSD [45.6%] / ASD [25.6%] / PDA [20.4%] / PS [2.9%], and that of cyanotic heart disease was TOF [42.6%] / PA [12.9%] / TGA [9.9%] / DORV [8.8%]. In 1,364 cases of valvular surgery, single mitral pathology was the most frequent candidate[729 cases, 53.4%]. In 243 cases of coronary surgery, bypassing graft materials were great saphenous vein[41.6%], internal mammary [39.5%], and artificial vessel[18.9%]. There were no specific differences in aortic surgery, assisted device implantation, and antiarrhythmic surgery as compared to previous study. This nation-wide inquiry will be continued and reported annually by KTCS Society.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.285-285
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• 2010

Zinc oxide (ZnO) is a direct band gap semiconductor with 3.37 eV, which has in a hexagonal wurtzite structure. ZnO is a good candidate for a photocatalyst because it has physical and chemical stability, high oxidative properties, and absorbs of ultraviolet light. During ZnO is irradiated by UV light, redox (reduction and oxidation) reactions will occur on the ZnO surface, generating the radicals O2- and OH. These two powerful oxidizing agents have been proven to be effective in decomposition of harmful organic materials, converting them into CO2 and H2O. Therefore, we assume that oxygen on the surface of ZnO is a very important factor in the photocatalytic activities of ZnO nanoparticles. Recently, ZnO nanoparticles are studied in various application fields by many researchers. Photocatalyst research is progressing much in various application fields. But the ZnO nanoparticles have disadvantage that is unstable in water in comparison titanium dioxide (TiO2). The Zn(OH)2 was formed at the ZnO surface and ZnO become inactive as a photocatalyst when ZnO is present in the solution. Therefore, we prepared synthesized ZnO nanoaprticles that were immersed in the water and dried in the oven. After that, we measured photocatalytic activities of prepared samples and find the cause of their phtocatalytic activity changes. The characterization of ZnO nanoparticles were analyzed by Scanning Electron Microscopy (SEM), X-ray diffraction (XRD) and BET test. Also we defined the photocatalytic activity of ZnO nanoparticles using UV-VIS Spectroscopy. And we explained changing of photocatalytic activity after the water treatment using X-ray Photoelectron Spectroscopy (XPS).

• Transactions of the Korean Society of Mechanical Engineers A
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• v.41 no.3
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• pp.193-198
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• 2017

Alloy 617 is one of the primary candidate materials to be used in a very high temperature reactor (VHTR) system as an intermediate heat exchanger (IHX). To investigate the low cycle fatigue behavior of Alloy 617 weldments at a high temperature of $850^{\circ}C$, fully reversed strain-controlled fatigue tests were conducted with the total strain values ranging from 0.6~1.5％. The weldment specimens were machined using the weld pads fabricated with a single V-grove configuration by gas tungsten arc welding (GTAW) process. The fatigue life is reduced as the total strain range increases. For all testing conditions, the cyclic stress response behavior of the Alloy 617 weldments exhibited the initial cyclic strain hardening phenomenon during the initial small number of cycles. Furthermore, the overall fatigue cracking and the propagation or cracks showed a transgranular failure mode.

• 한국신재생에너지학회:학술대회논문집
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• 2009.11a
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• pp.400-400
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• 2009

Despite the success of Cu(In,Ga)$Se_2$ (CIGS) based PV technology now emerging in several industrial initiatives, concerns about the cost of In and Ga are often expressed. It is believed that the cost of those elements will eventually limit the cost reduction of this technology. One candidate to replace CIGS is $Cu_2ZnSnSe_4$ (CZTSe), fabricated by co-evaporation technique. Co-evaporation technique will be one of the best methods to control film composition. This type of absorber derives from the $CuInSe^2$ chalcopyrite structure by substituting half of the indium atoms with zinc and other half with tin. Energy bandgap of this material has been reported to range from 0.8eV for selenide to 1.5eV for the sulfide and large coefficient in the order of $10^{14}cm^{-1}$, which means large possibility of commercial production of the most suitable absorber by using the CZTSe film. In this work, Effects of substrate temperature of $Cu_2ZnSnSe_4$ absorber layer on the performance of thin films solar cells were investigated. We reported on some of the absorber properties and device results.

• Journal of Chest Surgery
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• v.44 no.2
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• pp.123-130
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• 2011

Background: The aim of the present study was to identify chromosomal loci that contribute to the pathogenesis of aortic dissection (AD) in a Korean population using array comparative genomic hybridization (CGH) and to confirm the results using real-time polymerase chain reaction (PCR). Materials and Methods: Eighteen patients with ADs were enrolled in this study. Genomic DNA was extracted from individual blood samples, and array CGH analyses were performed. Four corresponding genes with obvious genomic changes were analyzed using real-time PCR in order to assess the level of genomic imbalance identified by array CGH. Results: Genomic gains were most frequently detected at 8q24.3 (56%), followed by regions 7q35, 11q12.2, and 15q25.2 (50%). Genomic losses were most frequently observed at 4q35.2 (56%). Real-time PCR confirmed the results of the array CGH studies of the COL6A2, DGCR14, PCSK6, and SDHA genes. Conclusion: This is the first study to identify candidate regions by array CGH in patients with ADs. The identification of genes that may predispose an individual to AD may lead to a better understanding of the mechanism of AD formation. Further multicenter studies comparing cohorts of patients of different ethnicities are warranted.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.106-106
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• 2011

Recently, zinc oxide (ZnO) thin films have attracted great attention as a promising candidate for various electronic applications such as transparent electrodes, thin film transistors, and optoelectronic devices. ZnO thin films have a wide band gap energy of 3.37 eV and transparency in visible region. Moreover, ZnO thin films can be deposited in a poly-crystalline form even at room temperature, extending the choice of substrates including even plastics. Therefore, it is possible to realize thin film transistors by using ZnO thin films as the active channel layer. In this work, we investigated influence of oxygen partial pressure on ZnO thin films and fabricated ZnO-based thin film transistors. ZnO thin films were deposited on glass substrates by using a pulsed laser deposition technique in various oxygen partial pressures from 20 to 100 mTorr at room temperature. X-ray diffraction (XRD), transmission line method (TLM), and UV-Vis spectroscopy were employed to study the structural, electrical, and optical properties of the ZnO thin films. As a result, 80 mTorr was optimal condition for active layer of thin film transistors, since the active layer of thin film transistors needs high resistivity to achieve low off-current and high on-off ratio. The fabricated ZnO-based thin film transistors operated in the enhancement mode with high field effect mobility and low threshold voltage.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.77-77
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• 2011

These days, a growing demand for memory device is filled up with the flash memory and the dynamic random access memory (DRAM). Although DRAM is a reasonable solution for current demand, the universal novel memory with high density, high speed and nonvolatility, needs to be developed. Among various new memories, the magnetic random access memory (MRAM) device is considered as one of good candidate memories because of excellent features including high density, high speed, low operating power and nonvolatility. The etching of MTJ stack which is composed of magnetic materials and insulator such as MgO is one of the vital process for MRAM. Recently, MgO has attracted great interest in the MTJ stack as tunneling barrier layer for its high tunneling magnetoresistance values. For the successful realization of high density MRAM, the etching process of MgO thin films should be investigated. Until now, there were some works devoted to the investigations on etch characteristics of MgO thin films. Initially, ion milling was applied to the etching of MgO thin films. However, ion milling has many disadvantages such as sidewall redeposition and etching damage. High density plasma etching containing the magnetically enhanced reactive ion etching and high density reactive ion etching have been employed for the improvement of etching process. In this work, inductively coupled plasma reactive ion etching (ICPRIE) system was adopted for the improvement of etching process using MgO thin films and etching gas mixes of $CH_4$/Ar and $CH_4$/$O_2$/Ar have been employed. The etch rates are measured by a surface profilometer and etch profiles are observed using field emission scanning emission microscopy (FESEM). The effects of gas concentration and etch parameters such as coil rf power, dc-bias voltage to substrate, and gas pressure on etch characteristics will be systematically explored.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.482-483
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• 2011

Graphene is a good candidate for the future nano-electronic materials because it has excellent conductivity, mobility, transparency, flexibility and others. Until now, most graphene researches are focused on the nano electronic device applications, however, biological application of graphene has been relatively less reported. We have fabricated a deoxyribonucleic acid (DNA) conjugated graphene field-effect transistor (FET) and measured the electrical transport characteristics. We have used graphene sheets grown on Ni substrates by chemical vapour deposition. The Raman spectra of graphene sheets indicate high quality and only a few number of layers. The synthesized graphene is transferred on top of the substrate with pre-patterned electrodes by the floating-and-scooping method [1]. Then we applied adhesive tapes on the surface of the graphene to define graphene flakes of a few micron sizes near the electrodes. The current-voltage characteristic of the graphene layer before stripping shows linear zero gate bias conductance and no gate operation. After stripping, the zero gate bias conductance of the device is reduced and clear gate operation is observed. The change of FET characteristics before and after stripping is due to the formation of a micron size graphene flake. After combined with 30 base pairs single-stranded poly(dT) DNA molecules, the conductance and gate operation of the graphene flake FETs become slightly smaller than that of the pristine ones. It is considered that DNA is to be stably binding to the graphene layer due to the ${\pi}-{\pi}$ stacking interaction between nucleic bases and the surface of graphene. And this binding can modulate the electrical transport properties of graphene FETs. We also calculate the field-effect mobility of pristine and DNA conjugated graphene FET devices.