• 한국수소및신에너지학회논문집
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• 제1권1호
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• pp.9-14
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• 1989

Mixed photocatalyst containing cadmium sulfide and zinc sulfide was prepared on silica gel powder and Nafion film. Photo-irradiation of aqueous mixture containing the photocatalysis generated hydrogen by water cleavage reaction. Use of sodium sulfide as sacrificial reagent help the photo-reaction. Evolution of the hydrogen was measured by gas chromatographic analysis. Composition of the catalyst was determined by atomic absorption spectrophotometer. 0.2 mL of of hydrogen was generated per hour. The maximun catalytic activity was obtained after 8-12 hours later. Hydrogen generation efficiency by the two different catalytic system was compared and showed that the Nafion-based catalyst is more efficient than the silicagel-based catalyst for the photoreaction.

• Bulletin of the Korean Chemical Society
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• 제31권4호
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• pp.1091-1093
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• 2010

• Bulletin of the Korean Chemical Society
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• 제33권12호
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• pp.4261-4264
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• 2012

• Bulletin of the Korean Chemical Society
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• 제31권12호
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• pp.3818-3821
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• 2010

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.110-111
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• 2009

상온에서 밴드갭이 2.42 eV의 에너지를 가지며 직접 에너지 밴드갭을 갖는 고감도의 광전도체로 태양전지의 광투과 물질로 각광을 받고 있으며 광전도 cell로 연구되고 있는 CdS(Cadmium sulfide)를 용액 성장법(CBD)으로 제조하여 박막의 결정립의 향상과 박막내의 결함 등을 제거하기 위해 RTP(Rapid Thermal Process)를 이용하여 열처리 분위기 $N_2$, 처리시간 10분을 기준으로 열처리온도 ($300\;^{\circ}C$, $400\;^{\circ}C$, $500\;^{\circ}C$)를 변화시키며 박막의 전기적, 광학적 특성을 조사하였다. 캐리어 밀도가 급격히 낮아지고 이동도가 증가한 $500\;^{\circ}C$에서 $1.29\times10^3\;{\Omega} m$ 비저항을 나타냈다. 가시광선 영역에서 76.28%의 투과율을 보이는 특성을 나타내었다.

• 한국토양비료학회지
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• 제24권3호
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• pp.183-191
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• 1991

본 연구는 아연광산(亞鉛鑛山) 주변의 논토양에 존재하는 Cd, Pb, Cu 및 Zn의 형태별 함량을 조사하여 중금속간의 분포(分布) 특성(特性)을 검토하였으며, 토양 화학적 성질이 이들의 형태별 함량 분포에 미치는 영향을 밝히기 위하여 수행되었다. 그 결과를 요약하면 다음과 같다. 1. 공시토양에 존재하는 Cd, Pb, Cu 및 Zn은 주로 해화물-잔류태(殘留態)로 존재하였으며, Cd와 Pb의 산화물(酸化物)-탄산염태(炭酸鹽態)와 Cu의 유기복합태(有機複合態)의 함량도 높은 편이었다. Pb와 Cu의 치환태는 소량 존재하였으며, 수용태는 Zn만 검출되었다. 2. 치환태의 분포비가 높은 토양일수록 산화물-탄산염태 및 황화물-잔류태의 분포비가 낮았다. 3. 토심이 깊어질수록 치환태 Cd 및 Zn의 분포비(分布比)는 낮아지고 항화물-잔류태의 분포비가 높아졌으며, Pb는 산화물-탄산염태의 분포비가 낮아지고 황화물-잔류태의 분포비가 높아졌다. 4. Cu는 유기물이 많은 토양일수록 Cu의 유기복합태 함량이 많았으며, Cd, Pb 및 Zn의 유기복합태는 유기물함량과 관계가 없었다. 치환태 Cd, Pb 및 Zn의 분포비는 pH가 높은 토양일수록 낮았으나, 이들의 산화물-탄산염태과 황화물-잔류태의 분포비의 합은 높았다. Pb의 산화물-탄산염태 및 황화물-잔류태의 분포비는 공시토양의 pH 전범위에서 Cd 및 Zn에 비하여 높았다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.305.2-305.2
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• 2016

Tin monosulfide (SnS) is one promising candidate absorber material which replace the current technology based on cadmium telluride (CdTe) and copper indium gallium sulfide selenide (CIGS) for its suitable optical band gap, high absorption coefficient, earth-abundant, non-toxic and cost-effective. During past years work, thin film solar cells based on SnS films had been improved to 4.36% certified efficiency. In this study, Tin monosul fide was obtained by atomic layer deposition (ALD) using the reaction of Tetrakis (dimethylamino) tin (TDMASn, [(CH3)2N]4Sn) and hydrogen sulfide (H2S) at low temperatures (100 to 200 oC). The direct optical band gap and strong optical absorption of SnS films were observed throughout the Ultraviolet visible spectroscopy (UV VIS), and the properties of SnS films were analyzed by sanning Electron Microscope (SEM) and X-Ray Diffraction (XRD).

• 한국전기전자재료학회논문지
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• 제18권3호
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• pp.199-205
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• 2005

Polycrystalline cadmium sulfide(CdS) thin films were deposited on glass substrate by chemical bath deposition(CBD) and vacuum evaporation (VE) techniques. VE-CdS films consisted primarily of hexagonal phase, whereas CBD CdS films containing primarily the cubic form. VE-grown films were shown to have better crystallinity than CBD-grown films. The grain size of the CBD films is smaller than the ones of VE films. VE-CdS films exhibited relatively high transmittance in the above-gap region and band gap compared with CBD films. However, CdTe solar cells with these low quality CBD-CdS layers yield higher and more stable characteristics. Current-voltage-temperature measurements showed that the current transport for both cells was controlled by both tunneling and interface recombination but the cells with CBD-CdS displayed less tunneling.

• JSTS:Journal of Semiconductor Technology and Science
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• 제8권4호
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• pp.326-332
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• 2008

In this work CdS films were prepared by using chemical bath deposition, which is simple and inexpensive technique suitable for large deposition area. Annealing in air at different temperatures (300, 350, 400, 450 and $500^{\circ}C$) at constant time of 30 min, also for different times (15, 30, 45, 60 and 90 min) at constant temperature ($300^{\circ}C$) is achieved. X-Ray analysis has confirmed the formation of cadmium oxide (CdO) with slight increase in grain size, shift towards lower scattering angle due to relaxation in the tensile strain for deposition films, and structure change from cubic and hexagonal to the hexagonal. From electrical properties, significant increase in electrical conductivity appeared in samples annealed at $300^{\circ}C$ for 60 min, and at $350^{\circ}C$ for 30 min.

• 대한전기학회논문지
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• 제31권9호
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• pp.74-81
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• 1982

One of the stable thin film transistor fabricated by cadmium suifide with the anodized aluminium oxide as gate material. The principle of the operation for the device is based on the control mechanism of injected majority carricrs to the wide band gap semiconductor, that is cadmium sulfide, by means of the function of the gate control. The fabricated device constructed by evaporating CdS layer in the form of microcrystalline on the oxided thin film characterized by ea, 80 as voltage amplification factor, 1/100 mho as transconductance, 8 kohm as dynamic output resistance, furthermore gain band width products is about 15 MHz.