• Journal of Plant Biology
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• 제39권3호
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• pp.179-184
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• 1996

The purpose of this study is to obtain the most efficient combination of Agrobacterium tumefaciens strains and Ti plasmids for the construction of dicotyledonous plant vector system. Ti plasmid-curing A. tumefaciens A136 and KU12C3 were transformed with four kinds of Ti plasmids, pTiBo542, pTiA6, pTiKU12 and pTiAch5, respectively. The stems of 28 species of dicotyledonous plants were then inoculated with these transformants and examined for crown gall formation. The different combination of A. tumefaciens strains and Ti plasmids showed quite a difference in terms of the crown gall formation. Agrobacterium strins A136 and KU12C3 have a same plant host range in case that both strains harour the same kind of Ti plasmid, pTiBo542 or pTiAch5. However, the above-mentioned both strains have quite different host range in the event of containing the same Ti plasmid, pTiKU12 or pTiA6. In case that KU12C3 contains pTiA6 or pTiKU12, this strain has a wider plant host range than A136. The plant host range of pTiBo542 is the widest, followed by pTiA6, pTiKU12 and pTiAch5. Twelve plants among 28 tested plants are not transformed by any virulent Agrobacterium strains used in this study. In conclusion, A. tumefaciens KU12C3 and A136 harboring pTiBo542 showed the widest host range for transforming dicotyledonous plants. Also, it was acertained that the host range of Ti plasmids is affected by chromosomal level.

• 한국주조공학회지
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• 제17권2호
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• pp.170-179
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• 1997

A noble technique has been developed for fabricating in situ formed $TiC_p/Al$ composites. In this process, fairly stable TiC particles were in situ synthesized in liquid aluminum by the interfacial reaction between an Al-Ti melt and SiC, which is a comparatively unstable carbide from the view-point of thermodynamics. It is possible in the present process to generate TiC particles of nearly 1 ${\mu}m$ in diameter, even utilizing SiC of 14 ${\mu}m$ as raw material. However, the dispersion behavior of TiC particles in the matrix depends on the size of the raw material SiC. Decomposing finer SiC makes the dispersion of TiC particles more uniform and the mechanical properties of composites are improved accordingly. The structure of in situ composites and their mechanical properties are affected by the fabrication temperature and the stirring time. It has been found that the most suitable condition for fabrication should be applied depending on the size of the raw material, even if the same kinds of carbide are used. Furthermore, although Al-Ti-Si system intermetallic compounds are detected in a $TiC_p/Al-Si$ composite which is fabricated by conventional melt-stirrng method, these compounds can not be observed in a $TiC_p/Al-Si$ composite made by this in situ production method. Hence the mechanical properties of the in situ $TiC_p/Al-Si$ composite are superior to those of the conventional $TiC_p/Al-Si$ composites.

• 미생물학회지
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• 제32권1호
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• pp.53-59
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• 1994

Agrobacterium tumefaciens KU12내에 존재하는 240kb 크기으 octopine형 Ti 플라스미드인 pTiKU12와 45kb 크기의 잠재 플라스미드인 pTi12를 제거하여 무독성의 A. tumefaciens 균주를 제조하였다. Octopine형 Ti 플라스미드인 pTiKU12는 고온(37${\circ}C$)에서의 배양과 ethidium bromide가 첨가되어 있는 배지에서의 배양을 각각 실시하여 제거하였으며, 잠재 플라스미드인 pTi12는 pTi12의 복제기원이 클로닝되어 잇는 재조합 플라스믿인 pYWXP와의 비화합성을 이용하여 제거하였다. pYWXP는 ethidium bromide가 첨가되어 있는 배지에서 고온(37${\circ}C$)으로 배양하여 제거하였다.

• 한국세라믹학회지
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• 제29권10호
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• pp.791-796
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• 1992

SiC(p)-TiC(p) composites were prepared by gas pressure sintering technique. B4C powder and phenolic resin were added as sintering aids by 0.3 wt%-B and 3 wt%-C, TiC powder were dispersed in SiC by 0, 10, 20, 30 and 50 vol%. Flextural strength, fracture toughness and theoretical density of 70 vol% SiC-30 vol% TiC composite sintered at 220$0^{\circ}C$ by gas pressing were 540 MPa, 5.5 MPa.m1/2 and 98.8% respectively.

• 한국결정성장학회지
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• 제9권5호
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• pp.510-515
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• 1999

일정농도의 $TiO_2$ 수용액과 일정농도의 KOH 수용액을 반응시켜 $TiO_2$의 가수분해에 의한 Titanium Oxide의 생성 및 생성물의 열처리 조건에 따른 거동을 연구하였다. 열처리 조건은 300~1000$1000^{\circ}C$에서 각각 1시간으로 하였고 각 조건에서 얻어진 생성물의 분석은 XRD, DTA 및 FT-IR에 의하여 연구 검토되었으며 그 결과 다음과 같은 결론을 얻을 수 있었다. \circled1 $90^{\circ}C$의 온도조건에서 초기 가수분해 반응 생성물은 Anatase형 TiO2의 주 peak가 회절각도의 폭이 넓고 강도가 약하게 나타나 준결정질 물질임을 나타내고 있다. \circled2 결정질이 좋지 못한 준정질 산화티탄은 $300^{\circ}C$까지는 Anatase 결정성이 온도와 더불어 좋아지며 $700^{\circ}C$에서 rutile형 TiO2로 상전이 한다. \circled3 alkali pH 영역에서 생성된 K-O-Ti 결합을 형성한 비 결정성 물질은 potasium titanate계의 물질로써 결정화 온도는 630~$640^{\circ}C$ 부근이다. \circled4 비 결정성 K-O-Ti 결합이 공존하는 준결정성 산화티탄은 K-O-Ti 결합물질의 함량이 증가됨에 따라 Anatase로의 결정화 온도가 $300^{\circ}C$에서 50$0^{\circ}C$로 높아지며 또한 rutile형 $TiO_2$로의 상이전도 $700^{\circ}C$에서 $900^{\circ}C$로 높아진다. \circled5 $TiO_4$와 KOH를 사용한 습식법에 의한 Anatase형 $TiO_2$합성조건은 pH 3~pH 5가 가장 바람직하며 열처리 온도는 $300^{\circ}C$에서 가능하다.

• Journal of Microbiology and Biotechnology
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• 제16권1호
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• pp.118-125
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• 2006

The region responsible for replication of the megaplasmid pAtC58 in the nopaline-type Agrobacterium tumefaciens strain C58 was determined. A derivative ofa Co1E1 vector, pBluscript SK-, incapable of autonomous replication in Agrobacterium spp, was cloned with a 7.6-kb Bg1II-HindIII fragment from a cosmid clone of pAtC58, which contains a region adjacent to the operon for the utilization of deoxyfructosyl glutamine (DFG). The resulting plasmid conferred resistance to carbenicillin on the A. tumefaciens strain UIA5 that is a plasmidfree derivative of C58. The plasmid was stably maintained in the strain even after consecutive cultures for generations. Analysis of nested deletions of the 7.6-kb fragment showed that a 4.3-kb BglII-XhoI region sufficiently confers replication of the derivative of the ColE1 vector on UIA5. The region comprises three ORFs, which have high homologies with repA, repB, and repC of plasm ids in virulent Agrobacterium spp. including pTiC58, pTiB6S3, pTi-SAKURA, and pRiA4b as well as those of symbiotic plasmids from Rhizobium spp. Phylogenie analysis showed that rep genes in pAtC58 are more closely related to those in pRiA4 than to pTi plasmids including pTiC58, suggesting that the two inborn plasmids, pTiC58 and pAtC58, harbored in C58 evolved from distinct origins.

• 대한치과기공학회지
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• 제29권1호
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• pp.133-138
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• 2007

In this study, the castability and of commercially pure titanium(c.p.Ti) grade according to the casting condition which are the vacuum condition in casting machine and mold temperature of investment, was investigated. Argon-arc melt/centrifugal casting machine was used for casting the specimens. The microstructure and mechanical properties were evaluated by using optical microscope. The results were as follows; 1. It could make a sure that there's relatively not much defect of casting body of c.p.Ti according to the deference of air pressure. 2. It could make sure that it formed porosity on the surface inside of the casting body of c.p.Ti according to deferent temperature. and on excellent castability was below $200^{\circ}C$ 3. As the mold temperature of investment was increased, the lamellar structure of phase and coarse grains were shown, especially under 42MPa.

• 대한화학회지
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• 제9권2호
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• pp.71-74
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• 1965

Reduction of Ti(Ⅳ)-oxalate complex on dropping mercury electrode has been studied as a function of oxalate concentration and of pH varied with HCl. Assuming there are equilibrium $TiO(C_2O_4)_2= \;+\;2H^+\;=\;Ti^{+4}\;+\;2C_2O_4\;=\;+\;H_2O,\;K_4$ in addition to $TiO(C_2O_4)_2\;^=\;=\;TiO^{++}\;+\;2C_2O_4=\;K_2\;Ti(C_2O_4)_2\;^-\;=\;Ti^{+3}\;+\;2C_2O_4=\;K_3$ in the system cathodic wave has been well explained for that pH is higher than 0.5. The equilibrium constants $K_2,\;K_3$ and $K_4$ have been to be $2{\times}10^{-12},\;5{\times}10^{-13}$ and $10^{-11}$, respectively. The reduction of Ti(Ⅳ)-oxalate system is $Ti^{+4}\;+\;e\;{\to}\;Ti^{+3}$ in the concentration of hydrochloric acid, higher than 3M.

• 한국재료학회지
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• 제9권2호
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• pp.168-172
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• 1999

보른이 고농도 도핑된 $\textrm{p}^{+}$-Si 영역상에서 비저항이 낮고 열적 안정성이 우수한 Co/Ti 이중막 실리사이드의 형성을 연구하였다. 본 연구에서는 Co/Ti 이중막 실리사이드는 청결한 $\textrm{p}^{+}$-Si 기판상에 Co(150${\AA}$)/Ti(50${\AA}$) 박막을 E-beam 기술로 진공증착하고 질소분위기($\textrm{10}^{-1}$atm)에서 2단계 RTA 공정(1차열처리:$650^{\circ}C$/20sec, 2차열처리:$800^{\circ}C$/20sec)을 수행하여 제작된다. 실험에서 얻어진 Co/Ti 이중막 실리사이드는 약 500${\AA}$의 균일한 두께를 갖고 18$\mu\Omega$-cm의 낮은 비저항 특성을 나타내었으며, $1000^{\circ}C$에 이르기까지 장시간 후속 열처리를 실시하여도 면저항 변화나 열응집 현상이 발생되지 않았다.

• 한국전기전자재료학회논문지
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• 제21권11호
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• pp.968-972
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• 2008

Ni/Ti/Al multilayer system ('/'denotes the deposition sequence) was tested for low-resistance ohmic contact formation to Al-implanted p-type 4H-SiC. Ni 30 nm / Ti 50 nm / Al 300 nm layers were sequentially deposited by e-beam evaporation on the 4H-SiC samples which were implanted with Al (norminal doping concentration = $4\times10^{19}cm^{-3}$) and then annealed at $1700^{\circ}C$ for dopant activation. Rapid thermal anneal (RTA) temperature for ohmic contact formation was varied in the range of $840\sim930^{\circ}C$. Specific contact resistances were extracted from the measured current vs. voltage (I-V) data of linear- and circular transfer length method (TLM) patterns. In constrast to Ni contact, Ni/Ti/Al contact shows perfectly linear I-V characteristics, and possesses much lower contact resistance of about $2\sim3\times10^{-4}\Omega{\cdot}cm^2$ even after low-temperature RTA at $840^{\circ}C$, which is about 2 orders of magnitude smaller than that of Ni contact. Therefore, it was shown that RTA temperature for ohmic contact formation can be lowered to at least $840^{\circ}C$ without significant compromise of contact resistance. X-ray diffraction (XRD) analysis indicated the existence of intermetallic compounds of Ni and Al as well as $NiSi_{1-x}$, but characteristic peaks of $Ti_{3}SiC_2$, a probable narrow-gap interfacial alloy responsible for low-resistance Ti/Al ohmic contact formation, were not detected. Therefore, Al in-diffusion into SiC surface region is considered to be the dominant mechanism of improvement in conduction behavior of Ni/Ti/Al contact.