• Journal of Plant Biology
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• v.39 no.3
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• pp.179-184
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• 1996

The purpose of this study is to obtain the most efficient combination of Agrobacterium tumefaciens strains and Ti plasmids for the construction of dicotyledonous plant vector system. Ti plasmid-curing A. tumefaciens A136 and KU12C3 were transformed with four kinds of Ti plasmids, pTiBo542, pTiA6, pTiKU12 and pTiAch5, respectively. The stems of 28 species of dicotyledonous plants were then inoculated with these transformants and examined for crown gall formation. The different combination of A. tumefaciens strains and Ti plasmids showed quite a difference in terms of the crown gall formation. Agrobacterium strins A136 and KU12C3 have a same plant host range in case that both strains harour the same kind of Ti plasmid, pTiBo542 or pTiAch5. However, the above-mentioned both strains have quite different host range in the event of containing the same Ti plasmid, pTiKU12 or pTiA6. In case that KU12C3 contains pTiA6 or pTiKU12, this strain has a wider plant host range than A136. The plant host range of pTiBo542 is the widest, followed by pTiA6, pTiKU12 and pTiAch5. Twelve plants among 28 tested plants are not transformed by any virulent Agrobacterium strains used in this study. In conclusion, A. tumefaciens KU12C3 and A136 harboring pTiBo542 showed the widest host range for transforming dicotyledonous plants. Also, it was acertained that the host range of Ti plasmids is affected by chromosomal level.

• Journal of Korea Foundry Society
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• v.17 no.2
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• pp.170-179
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• 1997

A noble technique has been developed for fabricating in situ formed $TiC_p/Al$ composites. In this process, fairly stable TiC particles were in situ synthesized in liquid aluminum by the interfacial reaction between an Al-Ti melt and SiC, which is a comparatively unstable carbide from the view-point of thermodynamics. It is possible in the present process to generate TiC particles of nearly 1 ${\mu}m$ in diameter, even utilizing SiC of 14 ${\mu}m$ as raw material. However, the dispersion behavior of TiC particles in the matrix depends on the size of the raw material SiC. Decomposing finer SiC makes the dispersion of TiC particles more uniform and the mechanical properties of composites are improved accordingly. The structure of in situ composites and their mechanical properties are affected by the fabrication temperature and the stirring time. It has been found that the most suitable condition for fabrication should be applied depending on the size of the raw material, even if the same kinds of carbide are used. Furthermore, although Al-Ti-Si system intermetallic compounds are detected in a $TiC_p/Al-Si$ composite which is fabricated by conventional melt-stirrng method, these compounds can not be observed in a $TiC_p/Al-Si$ composite made by this in situ production method. Hence the mechanical properties of the in situ $TiC_p/Al-Si$ composite are superior to those of the conventional $TiC_p/Al-Si$ composites.

• Korean Journal of Microbiology
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• v.32 no.1
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• pp.53-59
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• 1994

Agrobacterium tumefaciens KU12 contains pTiKU12 (240kb) of the octopine type Ti plamsid and pTi12 (45 kb) of the cryptic plasmid. To make the avirulent A. tumefaciens, the octopine type Ti plasmid, pTiKU12, was cured with elevated temperature (37${\circ}C$) and ethidium bromide (EtBr), respectively. Also the cryptic plasmid, pTi12, was cured by the introduction of recombinant plasmid, pYWXP, made by pTi12 replication origin and pUC19. pYWXP was cured by elevated temperature (37${\circ}C$) and EtBr simultaneously.

• Journal of the Korean Ceramic Society
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• v.29 no.10
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• pp.791-796
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• 1992

SiC(p)-TiC(p) composites were prepared by gas pressure sintering technique. B4C powder and phenolic resin were added as sintering aids by 0.3 wt%-B and 3 wt%-C, TiC powder were dispersed in SiC by 0, 10, 20, 30 and 50 vol%. Flextural strength, fracture toughness and theoretical density of 70 vol% SiC-30 vol% TiC composite sintered at 220$0^{\circ}C$ by gas pressing were 540 MPa, 5.5 MPa.m1/2 and 98.8% respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.5
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• pp.510-515
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• 1999

Synthesize of anatase type $TiO_2$ from $TiCl_4$ solution was studied. KOH was used on dehydration reaction of $TiCl_4$ solution. Products of dehydration reaction was calcined at 300, 500, 700, 900, $1000^{\circ}C$ during 1hour. Calcined products was studied by XRD, DTA, and FT-IR for effect of calcined temperature. The results are as follow. \circled1 Product pf dehydration reaction at$ 90^{\circ}C$ was semicrystalline anatase type $TiO_2$ because it has a peak vary broad and low at the position of anatase crysral XRD pattern. \circled2 Pure titanium oxide semi-crystalline products were produced at acid pH condition which convert to anatase crystal at $300^{\circ}C$ and to rutile crystal at $700^{\circ}C$. \circled3 The chemical composition of semicrystalline products which was produce at alkali pH conditions, were potasium titante. Potasium-titanate semi-crystalline products crystallized at 630~$640^{\circ}C$ \circled4 The transition temperature of potassium dopped titanium oxide semi-crystalline products was increased with the contents of potasium. \circled5 The optimum synthesise condition of anatase $TiO_2$ products from $TiCl_4$ and KOH are pH 3~5 and $300^{\circ}C$ calcination.

• Journal of Microbiology and Biotechnology
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• v.16 no.1
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• pp.118-125
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• 2006

The region responsible for replication of the megaplasmid pAtC58 in the nopaline-type Agrobacterium tumefaciens strain C58 was determined. A derivative ofa Co1E1 vector, pBluscript SK-, incapable of autonomous replication in Agrobacterium spp, was cloned with a 7.6-kb Bg1II-HindIII fragment from a cosmid clone of pAtC58, which contains a region adjacent to the operon for the utilization of deoxyfructosyl glutamine (DFG). The resulting plasmid conferred resistance to carbenicillin on the A. tumefaciens strain UIA5 that is a plasmidfree derivative of C58. The plasmid was stably maintained in the strain even after consecutive cultures for generations. Analysis of nested deletions of the 7.6-kb fragment showed that a 4.3-kb BglII-XhoI region sufficiently confers replication of the derivative of the ColE1 vector on UIA5. The region comprises three ORFs, which have high homologies with repA, repB, and repC of plasm ids in virulent Agrobacterium spp. including pTiC58, pTiB6S3, pTi-SAKURA, and pRiA4b as well as those of symbiotic plasmids from Rhizobium spp. Phylogenie analysis showed that rep genes in pAtC58 are more closely related to those in pRiA4 than to pTi plasmids including pTiC58, suggesting that the two inborn plasmids, pTiC58 and pAtC58, harbored in C58 evolved from distinct origins.

• Journal of Technologic Dentistry
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• v.29 no.1
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• pp.133-138
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• 2007

In this study, the castability and of commercially pure titanium(c.p.Ti) grade according to the casting condition which are the vacuum condition in casting machine and mold temperature of investment, was investigated. Argon-arc melt/centrifugal casting machine was used for casting the specimens. The microstructure and mechanical properties were evaluated by using optical microscope. The results were as follows; 1. It could make a sure that there's relatively not much defect of casting body of c.p.Ti according to the deference of air pressure. 2. It could make sure that it formed porosity on the surface inside of the casting body of c.p.Ti according to deferent temperature. and on excellent castability was below $200^{\circ}C$ 3. As the mold temperature of investment was increased, the lamellar structure of phase and coarse grains were shown, especially under 42MPa.

• Journal of the Korean Chemical Society
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• v.9 no.2
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• pp.71-74
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• 1965

Reduction of Ti(Ⅳ)-oxalate complex on dropping mercury electrode has been studied as a function of oxalate concentration and of pH varied with HCl. Assuming there are equilibrium $TiO(C_2O_4)_2= \;+\;2H^+\;=\;Ti^{+4}\;+\;2C_2O_4\;=\;+\;H_2O,\;K_4$ in addition to $TiO(C_2O_4)_2\;^=\;=\;TiO^{++}\;+\;2C_2O_4=\;K_2\;Ti(C_2O_4)_2\;^-\;=\;Ti^{+3}\;+\;2C_2O_4=\;K_3$ in the system cathodic wave has been well explained for that pH is higher than 0.5. The equilibrium constants $K_2,\;K_3$ and $K_4$ have been to be $2{\times}10^{-12},\;5{\times}10^{-13}$ and $10^{-11}$, respectively. The reduction of Ti(Ⅳ)-oxalate system is $Ti^{+4}\;+\;e\;{\to}\;Ti^{+3}$ in the concentration of hydrochloric acid, higher than 3M.

• Korean Journal of Materials Research
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• v.9 no.2
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• pp.168-172
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• 1999

We have studied the formation of Co/Ti bilayer silicide with low resistivity and good thermal stability on the heavily boron doped $\textrm{p}^{+}$-Si region. In this paper, Co/Ti bilayer silicides were fabricated by depositing Co($150\AA$)/Ti($50\AA$) films on the clean $\textrm{p}^{+}$-Si substrates in an E-beam evaporator and performing the two step RTA process (first annealing: 650$50^{\circ}C$/20sec, second annealing: $800^{\circ}C$/20sec) in a $N_2$ambient with the pressure of $\textrm{10}^{-1}$atm. Co/Ti bilayer silicides obtained from our experiments exhibited the low resistivity of about $18\mu\Omega$-cm and the uniform thickness of about $500\AA$ without change of sheet resistance and agglomeration under the long post0annealing time up to $1000^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.11
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• pp.968-972
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• 2008

Ni/Ti/Al multilayer system ('/'denotes the deposition sequence) was tested for low-resistance ohmic contact formation to Al-implanted p-type 4H-SiC. Ni 30 nm / Ti 50 nm / Al 300 nm layers were sequentially deposited by e-beam evaporation on the 4H-SiC samples which were implanted with Al (norminal doping concentration = $4\times10^{19}cm^{-3}$) and then annealed at $1700^{\circ}C$ for dopant activation. Rapid thermal anneal (RTA) temperature for ohmic contact formation was varied in the range of $840\sim930^{\circ}C$. Specific contact resistances were extracted from the measured current vs. voltage (I-V) data of linear- and circular transfer length method (TLM) patterns. In constrast to Ni contact, Ni/Ti/Al contact shows perfectly linear I-V characteristics, and possesses much lower contact resistance of about $2\sim3\times10^{-4}\Omega{\cdot}cm^2$ even after low-temperature RTA at $840^{\circ}C$, which is about 2 orders of magnitude smaller than that of Ni contact. Therefore, it was shown that RTA temperature for ohmic contact formation can be lowered to at least $840^{\circ}C$ without significant compromise of contact resistance. X-ray diffraction (XRD) analysis indicated the existence of intermetallic compounds of Ni and Al as well as $NiSi_{1-x}$, but characteristic peaks of $Ti_{3}SiC_2$, a probable narrow-gap interfacial alloy responsible for low-resistance Ti/Al ohmic contact formation, were not detected. Therefore, Al in-diffusion into SiC surface region is considered to be the dominant mechanism of improvement in conduction behavior of Ni/Ti/Al contact.