• Korean Journal of Materials Research
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• v.5 no.7
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• pp.820-828
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• 1995

Ti-sillcides are formed on an atomically clean Si substrate and its phase transition and surface and interface morphologies are examined depending on the Ti-film thicknesses, deposition temperatures and Si substrate orientations. Ti film thicknesses of 400$\AA$ and 200$\AA$ have been deposited at elevated temperatures from 50$0^{\circ}C$ to 90$0^{\circ}C$ with increments of 10$0^{\circ}C$ on Si(100) and Si(111) Ti-silicides are formed and analyzed with using XRD, SEM, and TEM to verify the phase transition and the surface and interface morphologies. The phase transition from C49 to C54 is observed to occur around $650^{\circ}C$ and examined to show some retardation depending on the substrate orientation and film thickness. This retardation of phase transition is explained by the consideration based on the surface and volume free energies. A rough surface of C49 TiSi$_2$is exhibited because of characteristics of nonuniform diffusion across the interface while the smooth surface and island formation of C54 TiSi$_2$is examined.

• Proceedings of the Materials Research Society of Korea Conference
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• 2000.11a
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• pp.58-58
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• 2000

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.1
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• pp.62-72
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• 1996

The interface formation and reaction-product morphology between SiC and thin metal films were studied at temperatures between 550 and $1450^{\circ}C$ for various times. The typical reaction layer sequence was CoSi/CoSi+C/CoSi/CoSi+C/ $\cdots$ /SiC reaction at 1050 and $1250^{\circ}C$ for 2 h, while $Ni_2Si/Ni_2Si+C/Ni_2Si/Ni_2Si+C/ {\cdots} /SiC$ at 950 and 105$0^{\circ}C$ for 2 h. Carbon precipitated preferentially on the outer surface and crystallized as graphite above $1450^{\circ}C$ for SiC/Co reaction zone and $1250^{\circ}C$ for SiC/Ni. The mechanism of the periodic band structure formation with carbon precipitation behaviour was discussed in terms of thermodynamic considerations.

• Journal of Sensor Science and Technology
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• v.14 no.2
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• pp.131-135
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• 2005

This paper describes the ohmic contact formation of single crystalline 3C-SiC thin films heteroepitaxially grown on Si(001) wafers. In this work, a TiW (Titanium-tungsten) film as a contact matieral was deposited by RF magnetron sputter and annealed with the vacuum and RTA (rapid thermal anneal) process respectively. Contact resistivities between the TiW film and the n-type 3C-SiC substrate were measured by the C-TLM (circular transmission line model) method. The contact phases and interface the TiW/3C-SiC were evaulated with XRD (X-ray diffraction), SEM (scanning electron microscope) and AES (Auger electron spectroscopy) depth-profiles, respectively. The TiW film annealed at $1000^{\circ}C$ for 45 sec with the RTA play am important role in formation of ohmic contact with the 3C-SiC substrate and the contact resistance is less than $4.62{\times}10^{-4}{\Omega}{\cdot}cm^{2}$. Moreover, the inter-diffusion at TiW/3C-SiC interface was not generated during before and after annealing, and kept stable state. Therefore, the ohmic contact formation technology of single crystalline 3C-SiC using the TiW film is very suitable for high temperature MEMS applications.

• Journal of Adhesion and Interface
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• v.15 no.4
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• pp.169-173
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• 2014

The effect of filler sizes on the thermal diffusivity of Nylon 66/SiC composites was investigated. By loading 60 vol% of SiC fillers on Nylon 66, the thermal diffusivity of the composites increased more than 10 times than that of unfilled Nylon 66 and the thermal diffusivity of composites with filler sizes of $24{\mu}m$ and $76{\mu}m$ increased to $2.2{\times}10^{-2}cm^2/sec$ and $1.75{\times}10^{-2}cm^2/sec$, respectively. It is speculated that the smaller filler size ($24{\mu}m$) of SiC is more favorable for the formation of thermal conductive path that the larger size ($76{\mu}m$) of filler composites. The thermal diffusivity of Nylon 46/SiC 400 (60 vol%) composites was $1.61{\times}10^{-2}cm^2/sec$ that was lower than that of Nylon 66/SiC (60 vol%) composites.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.4
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• pp.373-377
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• 2004

We have investigated the electrical characterization of metal-oxide-semiconductor (MOS) capacitors formed on the inductively coupled plasma (ICP) etch-damaged both n- and p-type 4H-SiC. We found that there was an effect of a sacrificial oxidation treatment on the etch-damaged surfaces. Current-voltage and capacitance-voltage measurements of these MOS capacitors were used and referenced to those of prepared control samples without etch damage. It has been found that a sacrificial oxidation treatment can improve the electrical characteristics of MOS capacitors on etch-damaged 4H-SiC since the effective interface density and fixed oxide charges of etch-damaged samples have been found to increase while the breakdown field strength of the oxide decreased and the barrier height at the SiC-SiO$_2$ interface decreased for MOS capacitors on etch-damaged surfaces.

• Journal of Korea Foundry Society
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• v.12 no.2
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• pp.149-154
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• 1992

The wetting behaviour of SiC/Al-Li composite interface has been investigated by using an infiltration method. The critical pressure for melt infiltration into SiC particulate preform has been determined by measuring the melt infiltration distance changes with the variation of applied pressure. The threshold pressure of pure Al, Al-0.2wt%Li, Al-0.5wt%Li for melt infiltration are 3.94, 3.93, $3.7Kg/cm^2$ respectively, which implies a slight improvement in wettability of SiC/Al composite by addition of Li. The threshold pressure for melt infiltration also changes with the variation of other parameters such SiC particulate size, SiC particulate fraction and melt temperature.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.1
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• pp.41-47
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• 1992

In SFB Process, after 110$0^{\circ}C$ annealing in wet OS12T(95$^{\circ}C$ HS12TO bubbling) atmosphere, the existence of the interfacial oxide film in micro-gap at Si-Si bonding interface was identified. The angle lapping/staining and SEM morphologies of bonding interface showed that the growing behavior of interfacial oxide made a contribution to eliminate the micro-gaps having a width of 200-300$\AA$. In case of the diodes composed of p-n wafer pairs made by SFB processes, the annealed one in wet OS12T atmosphere exhibited a dielectric breakdown phenomena of interfacial oxide at 37-40 volts d.c.

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.128.1-128.1
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• 2011

In amorphous silicon and crystalline silicon(a-Si:H/c-Si) heterojuction solar cells, intrinsic hydrogenated amorphous silicon(a-Si:H) films play an important role to passivate the crystalline silicon wafer surfaces. We have studied the correlation between the surface passivation quality and nature of the Si-H bonding at the a-Si:H/c-Si interface. The samples were obtained by VHF-CVD under different deposition conditions. The passivation quality and analysis of all structures studied was performed by means of quasi steady state photoconductance(QSSPC) methods and fourier transform infrared spectrometer(FTIR) measurements respectively.

• Journal of Korea Foundry Society
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• v.13 no.6
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• pp.524-531
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• 1993

Dispersion behaviors of SiC particles and microstructures in Al-2%Si/SiCp composite prepared by Rheo-compocasting were studied with change of fabrication conditions(slurry temperature, agitation time) and additions of Mg($0{\sim}3wt.%$). Also, the microhardness change of matrix, interface and total in composites were examined with additions of Mg($0{\sim}3wt.%$). The dispersion of particles in the composites became relatively homogeneous with increase of Mg additions, agitation time and decrease of slurry temperature. Rate of occupied area by particle in matrix was increased as increase of Mg additions due to improvement of wettability between SiC particle and matrix. A favorable composites were obtained by melting under Ar atmospheric SiCp injection and bottom pouring system. According to the analysis of X-ray diffraction, $Mg_2Si$, $Al_4C_3$, $SiO_2$ and MgO, etc, intermetallic compounds were formed by chemical interreaction at interface of matrix and particles. The microhardness of interface is higher than that of matrix due to more strengthening of above intermetallic compounds. It was considered that the total hardness of the composites is improved by dispersing of SiCp and addition of Mg.