• Bulletin of the Korean Chemical Society
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• v.32 no.1
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• pp.145-148
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• 2011

The thermal behavior of lithiated Si anodes has been investigated using differential scanning calorimetry (DSC). In particular, the effect of Si particle size on the thermal stability of a fully lithiated Si electrode was investigated. For DSC measurements, a lithiated Si anode was heated in a hermetically sealed high-pressure pan with a polyvinylidene fluoride (PVDF) binder and a 1 M $LiPF_6$ solution in an ethylene carbonate (EC)-diethyl carbonate (DEC) mixture. The thermal evolution around $140^{\circ}C$ increases with lithiation and with decreasing particle size; this phenomenon is attributed to the thermal decomposition of the solid electrolyte interface (SEI) film. Exothermic peaks, following a broad peak at around $140^{\circ}C$, shift to a lower temperature with a decrease in particle size, indicating that the thermal stability of the lithiated Si electrode strongly depends on the Si particle size.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.339-339
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• 2012

현재 MOS 소자에 사용되고 있는 $SiO_2$ 산화막은 그 두께가 얇아짐에 따라 Gate Leakage current와 여러 가지 신뢰성 문제가 대두되고 있고, 이를 극복하고자 High-k물질을 사용하여 기존에 발생했던 Gate Leakage current와 신뢰성 문제를 해결하고자 하고 있다. 본 실험에서는 High-k(hafnium) Gate Material에 온도 변화를 주었을 때 여러 가지 전기적인 특성 변화를 보는 방향으로 연구를 진행하였다. 기본적인 P-Type Si기판을 가지고, 그 위에 있는 자연적으로 형성된 산화막을 제거한 후 Hafnium Gate Oxide를 Atomic Layer Deposition (ALD)를 이용하여 증착하고, Aluminium을 전극으로 하는 MOS-Cap 구조를 제작한 후 FGA 공정을 진행하였다. 마지막으로 $300^{\circ}C$, $450^{\circ}C$로 30분정도씩 Annealing을 하여, 온도 조건이 다른 3가지 종류의 샘플을 준비하였다. 3가지 샘플에 대해서 각각 I-V (Gate Leakage Current), C-V (Mobile Charge), Interface State Density를 분석하였다. 그 결과 Annealing 온도가 올라가면 Leakage Current와 Dit(Interface State Density)는 감소하고, Mobile Charge가 증가하는 것을 확인할 수가 있었다. 본 연구는 향후 High-k 물질에 대한 공정 과정에서의 다양한 열처리에 따른 전기적 특성의 변화 대한 정보를 제시하여, 향후 공정 과정의 열처리에 대한 방향을 잡는데 도움이 될 것이라 판단된다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.4
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• pp.199-202
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• 2014

The effect of neutron irradiation on the properties of SiC Schottky Diode has been investigated. SiC Schottky diodes were irradiated under neutron fluences and compared to the reference samples to study the radiation-induced changes in device properties. The condition of neutron irradiation was $3.1{\times}10^{10}$ $n/cm^2$. The current density after irradiation decreased from 12.7 to 0.75 $A/cm^2$. Also, a slight positive shift (${\Delta}V_{th}$= 0.15 V) in threshold voltage from 0.53 to 0.68 V and a positive change (${\Delta}{\Phi}_B$= 0.16 eV) of barrier height from 0.89 to 1.05 eV have been observed by the neutron irradiation, which is attributed to charge damage in the interface between the metal and the SiC layer.

• Archives of Metallurgy and Materials
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• v.66 no.4
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• pp.941-946
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• 2021

A356 Al composites reinforced by short carbon fiber were prepared through the 2-step process: fabrication of a composite precursor and ultrasonication of the precursor melt. The short carbon fibers were coated with 0.15~1.5 ㎛ thick SiC layer by a carbothermal reaction, and an amount of the carbon fiber reinforcement was determined to be 1.5 vol.% and 4.0 vol.%, respectively. The addition of the carbon fiber increased the hardness of A356 alloy. However, tensile strength did not increase in the as-cast composites regardless of the SiC coating and volume fraction of the carbon fiber, due to the debonding which reduced load transfer efficiency from matrix to fiber at the interface. After T6-treatment of the composites, a significant increase in strength occurred only in the composite reinforced by the SiC-coated short carbon fiber, which was considered to result from the formation of a precipitate improving the Al/SiC interfacial strength.

• Transactions of the Korean Society of Mechanical Engineers
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• v.19 no.1
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• pp.122-131
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• 1995

The research trends for metal matrix composites have been on basic mechanical properties, fatigue behavior after aging and fractographic observations. In this study, the fatigue crack initiation as well as the fatigue crack growth behavior and the fracture mechanism were investigated through observations of the fracture surface on silicon carbide particles reinforced aluminum metal matrix composites(SiCp/Al). Based on the fractographic study done by scanning electron microscope and replica, crack growth path model and fracture mechanism are presented. The mechanical properties, such as the tensile strength, yield strength and elongation of SiCp/Al composites are improved in a longitudinal direction, however, the fatigue life is shorter than the basic Al6061 alloys. From fractographic observations, it is found that the failure mode is ductile in basic Ai6061 alloys. And because some SiC particles were pulled out from the matrix and a few SiC particles could be seen on the fracture surface of SiCp/Al, crack growth paths are believed to follow the interface of the matrix and its particles.

• Korean Journal of Materials Research
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• v.12 no.9
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• pp.724-728
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• 2002

Inductively-coupled $N_2$O plasma was utilized to grow silicon dioxide at low temperature and applied to fabricate polycrystalline-silicon thin film transistors. At $400^{\circ}C$, the thickness of oxide was limited to 5nm and the oxide contained Si≡N and ≡Si-N-Si≡ bonds. The nitrogen incorporation improved breakdown field to 10MV/cm and reduced the interface charge density to $1.52$\times$10^{11}$ $cm^2$ with negative charge. The $N_2$O plasma gate oxide enhanced the field effect mobility of polycrystalline thin film transistor, compared to $O_2$ plasma gate oxide, due to the reduced interface charge at the $Si/SiO_2$ interface and also due to the reduced trap density at Si grain boundaries by nitrogen passivation.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.1
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• pp.13-17
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• 2014

The direct-patternable $SnO_2$ thin film was successfully fabricated by photochemical metal-organic deposition. The composition and chemical bonding state of $SnO_2$ thin film were analyzed by using X-ray photoelectron spectroscopy (XPS) from the surface to the interface with Si substrate. XPS depth profiling analysis allowed the determination of the atomic composition in $SnO_2$ film as a function of depth through the evolution of four elements of C 1s, Si 2p, Sn 3d, and O 1s core level peaks. At the top surface, nearly stoichiometric $SnO_2$ composition (O/Sn ratio is 1.92.) was observed due to surface oxidation but deficiency of oxygen was increased to the interface of patterned $SnO_2/Si$ substrate where the O/Sn ratio was about 1.73~1.75 at the films. This O deficient state of the film may act as an n-type semiconductor and allow $SnO_2$ to be applied as a transparent electrode in optoelectronic applications.

• Composites Research
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• v.33 no.5
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• pp.247-250
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• 2020

In this study, the possibility of manufacturing a magnesium (Mg) composites reinforced with continuous silicon carbide (SiC) fibers was examined using a liquid pressing process. We fabricated uniformly dispersed SiC fiberAZ91 composites using a liquid phase pressing process. Furthermore, the precipitates were controlled through heat treatment. As a continuous Mg₂Si phase was formed at the interface between the SiC fiber and the AZ91 matrix alloy, the interfacial bonding strength was improved. The tensile strength at room temperature of the prepared composite was 479 MPa, showing excellent mechanical properties.

• Journal of the Korean Vacuum Society
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• v.7 no.3
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• pp.201-207
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• 1998

We have investigated about interface characteristics between ZnO thin films and metal electrodes when ZnO and metal electrodes were fabricated as piezoelectric vibrators. At this, ZnO thin films were deposited by rf reactive magnetron sputtering method. After fabricating piezoelectric vibrator of Cr/ZnO/Cr structure with optimum condition, we analyse interface characteristics between ZnO thin films and metal electrodes by I-V measurement. AES depth profile, SEM and C-V measurement. From these measurements we found that ZnO piezoelectric vibrators showed good property when they fabricated as Cr/$SiO_2$/ZnO/Cr structure. And we could confirm these things by driving, and measuring vibration displacement of piezoelectric vibrator with $SiO_2$diffusion barrier.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.21-24
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• 1997

Ferroeletric LiNbO$_3$ thin films hale been prepared directly on Si(100) substrates by conventional RF magnetron spurttering system for nonvolatile memory applications. As-deposited films were performed RTA(Rapid Thermal Annealing) treatment in an oxygen atmosphere at 600 $^{\circ}C$ for 60 s. The rapid thermal annealed films were changed to poly-crystalline ferroelectric nature from amorphous of as-deposition. The resistivity of the ferroelectric LiNbO$_3$ film was increased from a typical vague of 1~2$\times$10$^{8}$ $\Omega$.cm before the annealing to about 1$\times$10$^{13}$ $\Omega$.cm at 500 kV/cm and reduce the interface state density of the LiNbO$_3$/Si(100) interface to about 1$\times$10$^{11}$ cm$^2$ . eV. Ferroelectric hysteresis measurements using a Sawyer-Tower circuit yielded remanent polarization (Pr) and coercive field (Ec) values of about 1.2 $\mu$C/cm$^2$ and 120 kV/cm, respectively.