• 한국신재생에너지학회:학술대회논문집
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• 2008.05a
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• pp.394-396
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• 2008

기존의 PECVD에서 문제시 되고 있는 플라즈마에 의한 박막손상과 $300^{\circ}C$ 이상의 증착온도 등의 단점을 보완한 증착 기술로 중성입자 빔 (Hyper-thermal neutral beam ; HNB)을 이용한 저온 증착방법에 대한 연구를 진행하였다. 중성빔을 이용하여 HNB sputtering 방법과 $SiH_4$와 Ar, $H_2$ 가스를 이용한 HNB CVD 방법으로 a-Si 박막 제작에 대한 연구를 진행하였고, HIT(heterojunction with Intrinsic Thin layer) cell 태양전지를 만들고자 기본적인 박막 증착과 박막 특성 및 계면특성 등의 분석을 실시하였다. 유리기판과 p-type Si 기판 위에 a-Si 및 nc-Si 박막을 증착하였으며, TEM, FTIR, Raman, IV 측정 등을 통해 그 특성을 분석하여 HNB의 특성 및 효과를 규명하였다.

• Advanced Composite Materials
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• v.18 no.4
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• pp.339-350
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• 2009

Al-Fe-V-Si alloys reinforced with SiC particles were prepared by multi-layer spray deposition technique. Both microstructures and mechanical properties including hardness and tensile properties development during hot exposure process of Al-8.5Fe-1.3V-1.7Si, Al-8.5Fe-1.3V-1.7Si/15 vol% $SiC_P$ and Al-10.0Fe-1.3V-2Si/15 vol% $SiC_P$ were investigated. The experimental results showed that an amorphous interface of about 3 nm in thickness formed between SiC particles and the matrix. SiC particles injected silicon into the matrix; thus an elevated silicon concentration was found around $\alpha-Al_{12}(Fe,\;V)_3Si$ dispersoids, which subsequently inhibited the coarsening and decomposition of $\alpha-Al_{12}(Fe,\;V)_3Si$ dispersoids and enhanced the thermostability of the alloy matrix. Moreover, the thermostability of microstructure and mechanical properties of Al-10.0Fe-1.3V-2Si/15 vol% $SiC_P$ are of higher quality than those of Al-8.5Fe-1.3V-1.7Si/15 vol% $SiC_P$.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.8
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• pp.869-874
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• 1992

The physical and electrical properties of TiN/TiSiS12T bilayer were studied. The TiN/TiSiS12T bilayer was formed by rapid thermal anneal in NHS13T ambient after the Ti film was deposited on silicon substrate. The Ti film reacts with NHS13T gas to make a TiN layer at the surface and reacts with silicon to make a TiSiS12T layer at the interface respectively. It was found that the formation of TiN/TiSiS12T bilayer depends on RTA temperature. In this experiment, competitive reaction for TiN/TiSiS12T bilayer occured above $600^{\circ}C$. Ti-rich TiNS1xT layer and Ti-rich TiSiS1xT layer and Ti-rich TiSiS1xT layer were formed at $600^{\circ}C$. stable structure TiN layer TiSiS12T layer which has CS149T phase and CS154T phase were formed at $700^{\circ}C$. Both stable TiN layer and CS154T phase TiSiS12T layer were formed at 80$0^{\circ}C$. The thickness of TiN/TiSiS12T bilayer was increased as the thickness of deposited Ti film increased.

• Korean Journal of Crystallography
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• v.3 no.2
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• pp.98-110
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• 1992

B-SiC thin films were fabricated on Si(100) substrate under 1 atom by fVD. The effects of deposition conditions on the growth and the properties especially crystallinity and prefer ential alignment of these thin films were investigated. SiH4 and CH4 were used as source gases and H2 as Carrier gas. Th9 growth Of B-SiC thin films with changing parameters such as the growth temperature, the ratio of source gases (SiH4/CH4 ) and the total amount of source gases. The grown thin films were characterized by using SEM, a -step, XRD, Raman Spectro- scopy and TEM. Chemical conversion process improved the quality of thin films due to the formation of SiC buffer layer. The crystallinity of SiC thin films was improved when the growth temperature was higher than l150t and the amount of CH4 exceeded that of SiH4. The better crystallinity, the better alignment to the crystalline direction of substates. TEM analyses of the good quality thin films showed that the grain size was bigger at the surface than at the interface and the defect density is not depend on the ratio of the source gases.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.4
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• pp.49-57
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• 1992

Tungsten film was deposited on the TiN surface in a low pressure chemical vapor deposition reactor and chemical reaction mechanism between TiN surface and ($WF_{6}\;and\;SiH_{4}$ was studied. Interaction of ($WF_{6}\;or\;SiH_{4}$ with TiN surface and tungsten was deposited more easily. $WF_6$ reacted with TiN activated the TiN surface to form volatile TiF_4$ and tungsten nuclei were formed. ($SiH_{4}$ was dissociated on the TiN surface to form silicon nuclei. From RBS and AES analysis, we could not detect the impurities(such as Si or TiF$_x$)at the interface between tungsten and TiN. The adhesion at the W/TiN interface became poor when the deposition temperature was below 275$^{\circ}C$.

• Journal of the Korean Society of Safety
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• v.19 no.4 s.68
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• pp.25-30
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• 2004

Unidirectional fiber-metal matrix composites have superior mechanical properties along the longitudinal direction. However, the applicability of continuous fiber reinforced MMCs is somewhat limited due to their relatively poor transverse properties. Therefore, the transverse properties of MMCs are significantly influenced by the properties of the fiber/matrix interface. In this study, the interfacial stress states of transversely loaded unidirectional fiber reinforced metal matrix composites investigated by using elastic-plastic finite element analysis. Different fiber volume fractions $(5-60\%)$ were studied numerically. The interface was treated as thin layer (with different properties) with a finite thickness between the fiber and the matrix. The fiber is modeled as transversely isotropic linear-elastic, and the matrix as isotropic elastic-plastic material. The analyses were based on a two-dimensional generalized plane strain model of a cross-section of an unidirectional composite by the ANSYS finite element analysis code.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.58.1-58.1
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• 2010

We have developed a novel crystallization process, where the crystallization temperature is lowered compared to the conventional RTA process and the metal contamination is lowered compared to the conventional VIC process. A very-thin a-Si film was deposited and crystallized at $550^{\circ}C$ for 3 h by the VIC process and then a thick a-Si film was deposited and crystallized by the RTA process at $680^{\circ}C$ for 5 min using the VIC poly-Si layer as a crystallization seed layer. The RTA crystallized temperature could be lowered up to $50^{\circ}C$, compared to RTA process alone. The poly-Si film appeared a needle-like growth front and relatively well-arranged (111) orientation. In addition, the Ni concentration in the poly-Si film was lowered to $3{\times}10^{17}\;cm^{-3}$ and that at the poly-Si/$SiO_2$ interface was lowered to $5{\times}10^{19}\;cm^{-3}$. The reduction in metal contamination could be greatly helpful to achieve a low leakage current in poly-Si TFT, which is the critical parameter for commercialization of AMOLED.

• Transactions on Electrical and Electronic Materials
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• v.16 no.5
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• pp.227-233
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• 2015

To reduce the cost of solar electricity, the crystalline-silicon (c-Si) photovoltaic industry is moving toward the use of thinner wafers (100 μm to 200 μm) to achieve a high efficiency. In this field, it is imperative to achieve an effective passivation method to reduce the electronic losses at the c-Si interface. In this article, we review the most promising surface passivation schemes that are available for high-efficiency solar cells.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.1
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• pp.36-41
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• 2000

We studied the exchange anisotropy of Ni-Fe/Co-Fe/Mn-Ir/Cu/buffer/Si multilayers using D.C magnetron sputtering technique. Generally, Ni-Fe/Mn-Ir/buffer(Cu)/Si multilayers cannot pin the ferromagnetic layer for the lower exchange biased field. We got $H_{ex}$ ex/ increased by two times, after using Cu/Ta as buffer layer to get larger grain size of Mn-Ir layer and inserting very thin Co-Fe layer between the Ni-Fe layer and the Mn-Ir layer to get improved grain-to-grain epitaxy relation at the interface between Ni-Fe layer and Mn-Ir layer. The variation of $H_{ex}$ by thickness of Mn-Ir layer in ferromagnete/Mn-Ir/buffer/Si multilayers is different to that in Mn-Ir/ferromagnete/buffer/Si multilayers, because the volume distribution of grain size of Mn-Ir layer and the exchange energy at the interface between the Mn-Ir and the ferromagnetic layers is different for stacking sequence.

• Electrical & Electronic Materials
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• v.7 no.3
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• pp.231-235
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• 1994

The multi-dielectric layer $SiO_2$/$Si_3{N_4}$/$SiO_2$ (ONO) is used to improve charge retention and to scale down the memory device. The nitride layer of MNOS device is oxidize to form ONO system. During the oxidation of the nitride layer, the change of thickness of nitride layer and generation of interface state between nitride layer and top oxide layer occur. In this paper, effects of oxidation of the nitride layer is studied. The decreases of the nitride layer due to oxidation and trapping characteristics of interface state of multi layer dielectric film are investigated through the C-V measurement and F-N tunneling injection experiment using SONOS capacitor structure. Based on the experimental results, carrier trapping model for maximum flatband voltage shift of multi layer dielectric film is proposed and compared with experimental data. As a results of curve fitting, interface trap density between the top oxide and layer is determined as being $5{\times}10^11$~$2{\times}10^12$[$eV^1$$cm^2$].