• Journal of the Microelectronics and Packaging Society
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• v.11 no.4 s.33
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• pp.43-48
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• 2004

Electromigration of Sn-3.5Ag-0.5Cu solder bumps was investigated with current densities of $3{\~}4{\times}10^4 A/cm^2$ at temperatures of $130{\~}160^{\circ}C$ using flip chip specimens which consisted of upper Si chip and lower Si substrate. Electromigration failure of the Sn-3.5Ag-0.5Cu solder bump occurred with complete consumption of Cu UBM and void formation at cathode side of the solder bump. The activation energies for electromigration of the Sn-3.5Ag-0.5Cu solder bump were measured as 0.61 eV at current density of $3{\times}10^4 A/cm^2$, 0.63 eV at $3.5{\times}10^4 A/cm^2$, and 0.77 eV at $4{\times}10^4 A/cm^2$, respectively.

• Journal of the Microelectronics and Packaging Society
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• v.13 no.4
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• pp.37-43
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• 2006

Surface roughness and hardness of the electroplated Sn were characterized with variations of electroplating current density and current mode. The Sn electroplated at $5{\sim}50mA/cm^{2}$ exhibited the surface roughness of $2.0{\sim}2.4{\mu}m$. The Sn electroplated with pulse current mode exhibited low surface roughness compared one processed with direct current mode. With surface annealing at $300^{\circ}C$ for 3 sec using halogen lamp, surface roughness of the Sn bump was substantially reduced to $1{\mu}m$. The Sn electroplated at $5{\sim}50mA/cm^{2}$ exhibited the hardness of 10 Hv. Low contact resistances of $33{\sim}17m{\Omega}$ were obtained for specimens flip-chip bonded with Sn bumps.

• Journal of radiological science and technology
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• v.42 no.2
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• pp.113-117
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• 2019

The purpose of this study was to investigate the FA value which can produce the best T2-weighted images by measuring the signal intensity and noise according to the FA value change in the brain image and the abdominal image of the mouse using micro-MRI. Brain imaging and abdominal imaging of BALB / C mice weighing 20g were performed using 4.7T (Bruker BioSpin MRI GmbH) micro-MRI equipment, Turbo RARE-T2 (spin echo-T2) images were scanned at TR 3500 msec and TE 36 msec. The changes of the FA values were $60^{\circ}$, $80^{\circ}$, $100^{\circ}$, $120^{\circ}$, $140^{\circ}$, $160^{\circ}$ and $180^{\circ}$. We measured signal intensity according to FA values of ventricle and thalamus in brain imaging, The signal intensity of kidney and muscle around the kidney was measured in abdominal images. To obtain SNR and CNR, we measured the background signals of two different parts, not the tissue. In the brain (thalamus) image, the signal intensity of FA $100^{\circ}$ was 7,433 and SNR (6.49) was the highest. In the abdominal (kidney) image, the signal intensity was highest at 16,523 when FA was $120^{\circ}$, and the highest SNR was 8.54 when FA was $140^{\circ}$. The CNR value of the brain image was 1.38 at FA $60^{\circ}$ and gradually increased to 8.29 at FA $180^{\circ}$. The CNR value of the muscle adjacent to the kidney gradually increased from 2.36 when the FA value was $60^{\circ}$ and the highest value was 4,57 at the FA value $180^{\circ}$.

• Proceedings of the KWS Conference
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• 2002.10a
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• pp.456-462
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• 2002

In the present work, a low cost and fine pitch bumping process by electroless Ni/immersion Au UBM (under bump metallurgy) and stencil printing for the solder bump on the Al pad is discussed. The Chip used this experimental had an array of pad 14x14 and zincate catalyst treatment is applied as the pretreatment of Al bond pad, it was shown that the second zincating process produced a dense continuous zincating layer compared to first zincating. Ni UBM was analyzed using Scanning electron microscopy, Energy dispersive x-ray, Atomic force microscopy, and X-ray diffractometer. The electroless Ni-P had amorphous structures in as-plated condition. and crystallized at 321 C to Ni and Ni$_3$P. Solder bumps are formed on without bridge or missing bump by stencil print solder bump process.

• 한국초전도학회:학술대회논문집
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• v.10
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• pp.207-210
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• 2000

Properties of SrTiO$_3$ thin films were characterized under the influence of an applied dc voltage utilizing a gold resonator with a flip-chip capacitor. The measurements were performed at microwave frequency ranges and low temperatures cryogenic temperatures. The dielectric constant of 830 and the low loss tangent of 6X10$^{-3}$ at 3.64 GHz were observed at 90 K and 100 V. The quality in the SrTiO$_3$ film was presented in terms of fractional frequency under the bias voltages and cryogenic temperatures.

• Electronics and Telecommunications Trends
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• v.9 no.1
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• pp.109-122
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• 1994

소자가 고속, 고주파화 되고 ASIC 칩의 개발이 가속화되면서 패키징과 interconnection 의 중요성이 더욱 증대되고 있다. 소자의 성능에 가장 직접적인 영향을 주는 것이 1차 패키징인데 현재 가장 많이 실행되고 있는 것이 wire 등에 의한 본딩 방법이었다. 이러한 기존의 방법은 소자의 고속화와 입출력 숫자의 증가에 따라 점차 그 한계를 보이고 있는데 이에 대한 방안으로는 플립칩 본딩 방식에 의한 패키징을 들 수 있다. 약 20여년 전에 IBM 에서 개발된 이래 많은 발전을 거듭한 이 기술은 최근 기본 기술에 대한 특허권의 소멸과 함께 많은 응용 분야에서 개발이 활발히 진행되고 있다. 따라서 본 고에서는 향후의 가장 유력한 패키징 기술로 인정되고 있는 플립칩 본딩 기술의 특징과 제조 관련 사항을 정리함과 동시에 응용 분야, 특히, OEIC(Optoelectronics Integrated Circuit) 분야에서의 이용 및 개발 현황을 분석, 소개함으로써 이 새로운 패키징 기술에 대한 인식을 제고하고자 한다.

• Proceedings of the Microbiological Society of Korea Conference
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• 2005.05a
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• pp.221.4-221
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• 2005

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2010.05a
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• pp.671-672
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• 2010

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2009.06a
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• pp.1045-1046
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• 2009

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2009.10a
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• pp.525-526
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• 2009