• Proceedings of the Korea Contents Association Conference
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• 2008.05a
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• pp.595-597
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• 2008

Zinc Oxide(ZnO) thin films on Si (100) substrate were deposited by RF magnetron sputter with changing sputtering conditions such as argon/oxygen gas ratios, RF power, and substrate temperature, chamber pressure and target-substrate distance. To analyze a crystallographic properties of the films, ${\Theta}/2{\Theta}$ mode X-ray diffraction, SEM analyses. C-axis preferred orientation highly depended on RF power.

• Journal of Sensor Science and Technology
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• v.6 no.1
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• pp.56-62
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• 1997

Using a rf-magnetron sputtering method, highly c-axis oriented La modified $PbTiO_{3}$ (PLT) ferroelectric thin films with compositions of $(Pb_{1-x}La_{x})Ti_{1-x/4}O_{3}$, where x=0.05, x=0 and x=0.15, have been obtained on (100)MgO single crystal substrate under conditions of low gas pressure. The degree of c-axis orientation of PLT films decreases with increasing gas pressure and with increasing La contant. These films were characterized by X-ray diffraction and SEM. PLT thin films of x=0.05, 0.1 and 0.15 show a low dielectric constant of 218, 246 and 361 at 1 kHz and remanent polarization(Pr) of $9{\mu}C/cm^{2}$, $8{\mu}C/cm^{2}$ and $7{\mu}C/cm^{2}$.

• Progress in Superconductivity
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• v.5 no.1
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• pp.75-79
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• 2003

YBCO films were deposited with various thicknesses from 100nm to 1.6$\mu\textrm{m}$ on single crystal $SrTiO_3$ substrates by pulsed laser deposition (PLD). The effects of different deposition conditions, especially different deposition rates by means of changing the pulsed laser frequency up to 200Hz, on the J$_{c}$ value were studied. For YBCO film with the thickness of 200nm, the $J_{c}$ value of $2.1MA/\textrm{cm}^2$ has been achieved under the high deposition rate of 3.2nm/s (190nm/min). The $J_{c}$ can be maintained greater than $1M/\textrm{cm}^2$ with the thickness less than 1$\mu\textrm{m}$. The X-ray analysis was used to examine the texture, crystallization and surface quality. The SEM was employed to analyze the surface of YBCO, and it was shown the surface of YBCO film became rougher with increasing the thickness. There were many large singular outgrowths and networks of outgrowths on the surface of YBCO films which lowered the density of thick YBCO film. The outgrowth network was probably the a-axis YBCO corresponding to XRD $\theta$-2$\theta$scan and $\chi$-scan which were used to characterize a-axis orientation of YBCO film. The reason for J$_{c}$ declining with increasing the thickness was studied and discussed.sed.

• Journal of the Korean Ceramic Society
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• v.43 no.8 s.291
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• pp.463-468
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• 2006

Hydrothermal deposition of hydroxyapatite coatings on two types of $ZrO_2$ substrates (3 mol% $Y_2O_3$-doped and 13 mol% $CeO_2$-doped tetragonal $ZrO_2s$) was studied using aqueous solutions of $Ca(NO_3)_2\;4H_2O$ and $(NH_4)_2HPO_4$ containing EDTA (ethylene diamine tetra acetic acid) disodium salt as a chelating agent for $Ca^{2+}$ ions. For the precipitation of the coatings, the $EDTA-Ca^{2+}$ chelates were decomposed by oxidation with $H_2O_2$ at $90^{\circ}C$. The deposition behavior, morphology, and orientation of the coatings were investigated while varying the solution pH using scanning electron microscopy and X-ray diffractometry. For the two sub-strates, sparse deposition of the coating was obtained at pH 5.5, whereas a uniform deposition was obtained at pH 7.1, 9.8, and 11.4 with a denser microstructure for the higher pH. The coating consisted of thin needle-like or plate-like crystals ($1-2{\mu}m$ length or diameter) at pH 7.1, but fine rod-like crystals ($1-2{\mu}m$ length, $0.1{\mu}m$ diameter) at pH 9.8 and 11.4. The coatings were $1-3{\mu}m$ thick and showed a preferred orientation of the hydroxyapatite crystals with their c axis (i.e., the elongated direction) perpendicular to the substrate surface especially for pH 9.8 and 11.4.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.05a
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• pp.359-362
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• 2003

Electrophoretic deposition (EPD) of alcohol YBCO suspensions on the Ag wire electrode is studied. Poly(ethylene glycol) was coordinated to a structure formed by the EPD process with YBCO particles. The suspension is characterized in terms of zeta potential and conductivity. The d.c electric fields of 200-300 V/cm are applied for 1-10 min. The optimal condition for the EPD allows modifying the properties and microstructure of the deposited films. Superconducting coatings with nanometer-sized pores and a preferred orientation along the c-axis were prepared from the result with chemically modified precursor solution. In contrast, YBCO coatings of submicrometer-sized pores and randomly orientated grains were prepared from the solution without PEG.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.06a
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• pp.157-159
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• 1998

Sapphire crystals were grown by Horizontal Bridgman method. The effects of sliding rate (growth rate) of Molybdenum container, growth atmosphere, temperature gradient and orientation of see on crystal qualities were investigated. The size of the crystals grown was up to 150-200 mm in length, 90 mm in width and 25-35 mm in thickness. Crystals grown under the optimum conditions were colorless, transparent and could not be observed and macroscopic defects, such as bubbles, cracks, twins and mosaic structure. With the grown crystals, prototypes of sapphire substrate for blue wafers were characterized. As a result, we can get hight quality of sapphire wafers with c-axis, 1.5 inches in diameters and 0.33 mm in thickess.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.509-512
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• 2001

Aluminum nitride(AlN) thin films were deposited on silicon substrates using RF magnetron sputtering at various deposition conditions and investigated the characteristics. It was used XRD, AES, SEM, and HP-4145B semiconductor parameter analyzer to analysis deposited AlN thin films. The deposition conditions for the good c-axis orientation were 100 W of RF power, $200^{\circ}C$ of substrate temperature and 15 mTorr of working pressure. The leakage current density was less then $1.3{\times}10^{-7}A/cm^{2}$. And it was also investigated the etching properties of deposited AlN thin films for application.

• Journal of the Speleological Society of Korea
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• no.76
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• pp.1-13
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• 2006

Electrophoretic deposition (EPD) of alcohol YBCO suspensions on the Ag wire electrode is studied. Poly(ethylene glycol) was coordinated to a structure formed by the EPD process with YBCO particles. The suspension is characterized in terms of zeta potential and conductivity. The d.c electric fields of 200-300 V/cm are applied for 1-10 min. The optimal condition for the EPD allows modifying the properties and microstructure of the deposited films. Superconducting coatings with nanometer-sized pores and a preferred orientation along the c-axis were prepared from the result with chemically modified precursor solution. In contrast, YBCO coatings of submicrometer-sized pores and randomly orientated grains were prepared from the solution without PEG.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.866-867
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• 2006

This work will report a highly textured ${\beta}-Si_3N_4$ ceramic by aqueous slip casting in a magnetic field and subsequent pressureless sintering, Effects of the sintering aids, polymer dispersant, pH and stirring time on the stability of the $Si_3N_4$ slurries were studied. The textured ${\beta}-Si_3N_4$ with 97 % relative density could be obtained by slip casting in a magnetic field of 12 T and subsequent sintering at $1800^{\circ}C$ for 1 h. The textured microstructure is featured by the alignment of c-axis of ${\beta}-Si_3N_4$ crystals perpendicular to the magnetic field, and the Lotgering orientation factor, f, is determined to be 0.8.

• Journal of the Korean Ceramic Society
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• v.35 no.1
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• pp.17-22
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• 1998

B-doped ZnO thin films on glass substrates were prepared by sputtering the ceramic targets which had been prepared by sintering disks consisting of ZnO and various amounts of B2O3 While pure ZnO films show-ed a c-axis oriented growth the B-doping retarded the prefered orientation and grain growth of the film. Electron concentrations for undoped and B-doped ZnO films were on the order of 7.8${\times}$1018 cm-3 and 5${\times}${{{{ {10 }^{20 } }} c{{{{ {m }^{-3 } }} respectively. The electron mobility however decreased with the B-doping concentration. Optical meas-urements on the films showed that the average transmittance in the visible range was higher than 85% The measurements also indicated a blueshift of the absorption edge with doping.