• 대한기계학회논문집B
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• 제26권8호
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• pp.1145-1152
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• 2002

A non-intrusive Planar Laser-Induced Fluorescence(PLIF) technique was applied to study the turbulent mixing process in a Rushton turbine reactor. Instantaneous and ensemble averaged concentration fields was obtained by measuring the fluorescence intensity of Rhodamine B tracer excited by a thin Nd:Yag laser sheet illuminating the whole center plane of the stirred tank. The gray level images captured by a 14-bit cooled CCD camera could be transformed to the local concentration values using a calibration matrix. The dye injection point was selected at the tank wall with three quarter. height (3/4H) from the tank bottom to observe the mixing characteristics in upper bulk flow region. There exist distinct two time scales: the rapid decay of mean concentration after the dye infusion reflects the large scale turbulent mixing while the fellowed slow decay reveals the small scale molecular mixing. The temporal change of concentration variance field conjectures the two sequential processes for the batch type mixing. An inactive column of water is existed above the impeller disk, in which the fluid rotates with the shaft but is isolated from the mean bulk flow.

• 한국재료학회지
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• 제9권1호
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• pp.104-107
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• 1999

Fe 강제오염된 p-Si에서 여러 가지 quenching 조건에 기인한 에너지 준위들을 deep level transient spectroscopy(DLTS)를 이용하여 측정하였으며, 또한 선택 에칭방법/Optical microscope을 이용한 BMD(bulk micro-defeat)측정을 통하여 Fe 침전물 형서에, Fe 확산을 위한 어닐링 후 Cooling 조건이 미치는 영향을 분석하였다. Cooling 조건들이 여러 종류의 hole trap과 bulk micro-defeat(BMD)형성에 영햐을 주는 것으로 나타났으며, normal cooling의 경우 $\textrm{Fe}_{i}$, 또는 Fe-O complex 와 관계있는 $\textrm{T}_{1},\;\textrm{T}_{2},\;\textrm{T}_{3},\;\textrm{T}_{4}$ trap이 나타났으며, Slow Cooling 의 영향으로 인하여 활성화 에너지가 0.4eV에 해당하는 trap들이 관찰되었다. 또한 $\textrm{Fe}^{+}\textrm{}^{-}$ pair(H4: 0.56eV)는 $\textrm{LN}_{2}$ quenching한 경우에서만 나타났다.

• 한국환경과학회지
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• 제10권3호
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• pp.209-216
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• 2001

Dustfall particles were collected by the modified American dust jar (wide inlet bottle type) at 6 sampling sites in Pusan area from March, 1999 to February, 2000. Thirteen chemical species (Al, Ca, Cd, Cr, Cu, Fe, K, Mg, Mn, Ni, Pb, Si, and Zn) were analyzed by AAS and ICP. The purposes of this study were to estimate qualitatively various bulk deposition flux of dustfall and insoluble components by applying regional and seasonal distribution. Dustfall amount of regional variations were found in order of coastal zone, industrial zone, commercial zone, agricultural zone and residential zone, and seasonal total dustfall had higher concentrations during spring for 6.741 ton/${km}^2$/season, lower concentrations during summer for 1.989 ton/${km}^2$/season, and annual total concentration was 17.742 ton/${km}^2$/year. The regional distributions of enrichment factor show well-defined anthropogenic metals (Cd, Cu, Pb, and Zn) at industrial and agricultural zone, and contribution rate of soil particles were found in order of summer, fall, winter and spring. Factor loading effects of chemical composition of dustfall were found in order of road traffic emission source and combustion processed source, industrial activity source, soil source and marine source.

• 전기전자학회논문지
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• 제1권1호
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• pp.1-10
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• 1997

It is well-known that rectangular bulk-Si sensors prepared by etch or epi etch-stop micromachining technology are already in practical use today, but the conventional bulk-Si sensor shows some drawbacks such as large chip size and limited applications as silicon sensor device is to be miniaturized. We consider a circular-shape SOI(Silicon-On-Insulator) micro-cavity technology to facilitate multiple sensors on very small chip, to make device easier to package than conventional sensor like pressure sensor and to provide very high over-pressure capability. This paper demonstrates the cross-functional results for stress analyses(targeting $5{\mu}m$ deflection and 100MPa stress as maximum at various applicable pressure ranges), for finding permissible diaphragm dimension by output sensitivity, and piezoresistive sensor theory from two-type SOI structures where the double SOI structure shows the most feasible deflection and small stress at various ambient pressures. Those results can be compared with the ones of circular-shape bulk-Si based sensor$^{[17]}. The SOI micro-cavity formed the sensors is promising to integrate with calibration, gain stage and controller unit plus high current/high voltage CMOS drivers onto monolithic chip.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.259-262
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• 2003

The surface electronic state of rutile $TiO_2$, which is an oxide semiconductor and has a wide band gap of 3.1 $\sim$ 3.5 eV, was calculated by DV-$X_{\alpha}$ method, which is a sort of the first principle molecular orbital method and uses Hartre-Fock-Slater approximation. The $[Ti_{15}O_{56}]^{-52}$ cluster model was used for the calculation of bulk state and the $[OTi_{11}O_{34}]^{-24}$ model for the surface state calculation. After calculations, the energy level diagrams and the deformation electron density distribution map were compared in both models. As results, it was identified that the surface energy levels are found between the valence and conduction band of bulk $TiO_2$ on the surface area. The energy values of these surface-induced levels are lower than conduction band of bulk $TiO_2$ by 0.1 $\sim$ 1 eV. From this fact, it is expected that the surface energy levels act as donar levels in n-type semiconductor.

• Membrane and Water Treatment
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• 제3권4호
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• pp.243-252
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• 2012

Tri-n-butyl phosphate (TBP) was used as carrier for the transport of Golden yellow and Cibacron LSG dyes through a hexane bulk liquid membrane. The transport efficiency of dyes by TBP was investigated under various experimental conditions such as pH of the feed phase (dyes solution), concentration of the receiving phase (NaOH solution), concentration of TBP in membrane, rate of stirring, effect of transport time, type of solvent, dye concentration in feed phase, effect of temperature.. The maximum transport dyes occurs at ratio of 1:1 TBP-hexane At pH 3.0 0.1 (feed phase) the transport dyes decreased. At high stirring speed (300 rpm) the dyes transport from the feed phase to the strip phase was completed within 60 minutes at $27^{\circ}C$. Under optimum conditions: Feed phase 100 mg/L dyes solution at pH 1.0 0.1, receiving phase 0.1 mol/L NaOH solution, membrane phase 1:1 TBP-hexane , Stirring speed 300 rpm and temperature $27^{\circ}C$, the proposed liquid membrane was applied to recover the textile effluent.

• 대한기계학회논문집B
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• 제25권3호
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• pp.381-388
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• 2001

Presented are heat data which describe the effect of interaction between bulk flow pulsations and a vortex embedded in a turbulent boundary layer. The pulsation frequencies are 3 Hz, 15 Hz and 30 Hz. A half delta wing with the same height as the boundary layer thickness is used to generate the vortex flow. The convection heat transfer coefficients on a constant heat-flux surface are measured by embedded 77 T-type thermocouples. Spanwise profiles of convection heat transfer coefficients show that upwash region of vortex flow is influenced by bulk flow pulsations. The local heat transfer coefficient increases approximately by 7 percent. The increase in the local change of convection heat transfer coefficient is attributed to the spanwise oscillatory motion of vortex flow especially at the low Strouhal number and to the periodic change of vortex size.

• 한국세라믹학회지
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• 제52권5호
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• pp.331-337
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• 2015

$LaBO_3$ (B = Cr, Mn, Fe, Co, and Ni) perovskites, the most common perovskite-type mixed ionic-electronic conductors (MIECs), are promising candidates for intermediate-temperature solid oxide fuel cell (IT-SOFC) cathodes. The catalytic activity on MIEC-based cathodes is closely related to the bulk ionic conductivity. Doping B-site cations with other metals may be one way to enhance the ionic conductivity, which would also be sensitively influenced by the chemical composition of the dopants. Here, using density functional theory (DFT) calculations, we quantitatively assess the activation energies of bulk oxide ion diffusion in $LaBO_3$ perovskites with a wide range of combinations of B-site cations by calculating the oxygen vacancy formation and migration energies. Our results show that bulk oxide ion diffusion dominantly depends on oxygen vacancy formation energy rather than on the migration energy. As a result, we suggest that the late transition metal-based perovskites have relatively low oxygen vacancy formation energies, and thereby exhibit low activation energy barriers. Our results will provide useful insight into the design of new cathode materials with better performance.

• 산업경영시스템학회지
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• 제36권1호
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• pp.8-16
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• 2013

We consider a problem of presort and loading of commercial bulk mails in a mailing service. Here, presort is the process by which a mailer prepares mail so that it is sorted to at least the finest extent required by the mailing service provider for the (discounted) price claimed. The problem is formulated as a special type of transportation problem. To solve industrial-sized problems, we develop an efficient heuristic algorithm and perform experimental tests on randomly generated problem instances. Results of the tests show that mailers can save mailing cost much more when they use small-sized mail trays with less frequent mailings. Also, large-sized mailers can obtain much more cost saving than small-sized mailers. In addition, cost saving effect is influenced by delivery area distribution of mails and fluctuation of mailing demand.

• 전자통신동향분석
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• 제33권6호
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• pp.12-23
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• 2018

In this paper, we review the technical trends of diamond and gallium oxide ($Ga_2O_3$) semiconductor technologies among ultra-wide bandgap semiconductor technologies for harsh environments. Diamond exhibits some of the most extreme physical properties such as a wide bandgap, high breakdown field, high electron mobility, and high thermal conductivity, yet its practical use in harsh environments has been limited owing to its scarcity, expense, and small-sized substrate. In addition, the difficulty of n-type doping through ion implantation into diamond is an obstacle to the normally-off operation of transistors. $Ga_2O_3$ also has material properties such as a wide bandgap, high breakdown field, and high working temperature superior to that of silicon, gallium arsenide, gallium nitride, silicon carbide, and so on. In addition, $Ga_2O_3$ bulk crystal growth has developed dramatically. Although the bulk growth is still relatively immature, a 2-inch substrate can already be purchased, whereas 4- and 6-inch substrates are currently under development. Owing to the rapid development of $Ga_2O_3$ bulk and epitaxy growth, device results have quickly followed. We look briefly into diamond and $Ga_2O_3$ semiconductor devices and epitaxy results that can be applied to harsh environments.