• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2015.10a
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• pp.451-454
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• 2015

This paper introduces 3 type of OTAs with $0.35-{\mu}m$ standard CMOS technology for Low-Power, Low-Voltage. The first type is a two-stage OTA designed to operate with a 1-V VDD and it has $1.774{\mu}W$ low power consumption. All transistors are operating in strong inversion. It takes Gm-Enhancement techniques to compensate gm, which is lowered by Bulk-Driven technique and has an Wide swing current mirror for low voltage operation and a Class-A output. The second type is a Two-stage OTA designed to operate with a 0.8-V VDD and It has 52nW low power consumption and 112dB high gain. The current mirror uses Composite Transistor binding Gates of two MOSFET to raise Rout which is similar with cascode structure. The third type is a Two-stage OTA designed to operate with a 0.6-V VDD and It has 160nW low power consumption and 72dB high gain. It takes Level Shift technique by Common Gate structure to amplify signals without additional bias voltage at second stage.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.1
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• pp.28-36
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• 2008

This paper discusses theimplementation of the low-voltage, low-power, third-order, 1-bit switched capacitor delta-sigma modulator of the implantable cardiac pacemaker. The distributed, feed-forward structure and bulk-driven OTA were used in order to achieve an efficient operation under a supply voltage of 1V or lower. The designed modulator has a dynamic range of 49dB at 0.9V supply voltage and consumes 816nW of power. Such a significant reduction in power consumption allows diverse applications, not only in pacemakers, but also in implantable biomedical devices that operate with limited battery power. The core chip size of the modulator is $1000{\mu}m*500{\mu}m$ manufactured, with the $0.18{\mu}m$ CMOS standard process.