• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.743-745
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• 2002

Pyroelectric and dielectric properties of modified PZT thin film and bulk ceramics were studied. In case of bulk specimens were prepared by conventional ceramic process and thin films with same composition and (111) preferred orientation were prepared by the sol-gel process. Their crystal structure, pyroelectric and dielectric properties were investigated after poling at $150^{\circ}C$ for 30 min for bulk ceramics and no poling treatment, respectively. Dielectric constants and losses of bulk and thin film were 600, 875 and 0.028, 0.025, respectively. Pyroelectric coefficients obtained were $50nC/cm^2K$ and $30nC/cm^2K$, respectively.

• 소성∙가공
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• 제13권2호
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• pp.168-173
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• 2004

Microforming can be a good application for bulk metallic glasses. It is important to simulate the deformation behaviour of the bulk metallic glasses in a supercooled liquid region for manufacturing micromachine parts. For these purposes, a correct constitutive model which can reproduce viscosity results is essential for good predicting capability. In this paper, we studied deformation behaviour of the bulk metallic glasses using the finite element method in conjunction with the fictive stress constitutive model which can describe non-Newtonian as well as Newtonian behaviour. A combination of kinetic equation which describes the mechanical response of the bulk metallic glasses at a given temperature and evolution equations fur internal variables provide the constitutive equation of the fictive stress model. The internal variables are associated with fictive stress and relation time. The model has a modular structure and can be adjusted to describe a particular type of microforming process. Implementation of the model into the MARC software has shown its versatility and good predictive capability.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2000년도 춘계학술대회 논문집
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• pp.1039-1042
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• 2000

This research will deal with Innovative manufacturing technology for milli-structure manufacturing technology which is located betweon the traditional manufacturing technology for macro-sized structure and the recently emerging manufacturing technology for micro-scaled structure such as MEMS. There are four fields in this research, which are micro-sheet metal forming technology, micro-bulk forming technology micro-molding technology and micro die making technology. As a project for new-technology in next generation, this research will be carried out through three terms and each term and be composed of three years.

• 한국환경보건학회지
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• 제21권4호
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• pp.24-31
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• 1995

Gas sensing element, $\alpha-Fe_2O_3$ was synthesized by dehydration, reduction, and oxidation of $\alpha-FeOOH$, which was synthesized with $FeSO_4\cdot 7H_2O$ and NaOH. They were produced as a bulk-type, a thick film-type. Then, their responses and mechanisms of response to the gas of carbon monoxide were studied. The qualities of gas sefising elements are decided by the structure and the relative surface area. In the process of $\alpha-FeOOH$ synthesis, the effects of reaction conditions as the equivalent ratio, on the structure and the relative surface area of gas sensing element were observed. The changes of the structure were measured with XRD, SEM,TG-DTA and BET. The resistance changes of the synthesized gas sensor in the air were measured. The response ratio were also measured for the changes of working temperature and gas concentration. As a result of analysis with XRD, it was confirmed that the the best conditions for the synthesis of $\alpha-FeOOH$ were equivalent ratio 0.65. The thick film-type element of $\gamma-Fe_2O_3$ responded more quickly than the bulk-type did. The structure and the relative surface area of the $\rho-FeOOH$ were confirmed as the important factors deciding gas response charcteristics.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권4호
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• pp.478-483
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• 2014

We propose a new method which can extract the information about the electronic traps in the semi-insulating GaN buffer of AlGaN/GaN heterostructure field-effect transistors (HFETs) using a simple test structure. The proposed method has a merit in the easiness of fabricating the test structure. Moreover, the electric fields inside the test structure are very similar to those inside the actual transistor, so that we can extract the information of bulk traps which directly affect the current collapse behaviors of AlGaN/GaN HEFTs. By applying the proposed method to the GaN buffer structures with various unintentionally doped GaN channel thicknesses, we conclude that the incorporated carbon into the GaN back barrier layer is the dominant origin of the bulk trap which affects the current collapse behaviors of AlGaN/GaN HEFTs.

• Bulletin of the Korean Chemical Society
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• 제17권12호
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• pp.1109-1111
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• 1996

The Podand Ⅰ (Figure 1) has been studied as cation carrier in a bulk liquid membrane system. Ag+ and some other transition metal ions (M2+=Cu, Ni, Co, Zn, and Cd) have been transported using the podand as carrier in a bulk liquid membrane system. Studies on the transport of equimolar mixtures of two or three competing components have also been carried out with the same system. Ag+ exhibited a higher transport rate than the other M2+ in the competitive experiments. Ligand structure and the equilibrium constant for complex formation are important parameters in the transport of the metal ions.

• 대한전자공학회논문지
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• 제22권5호
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• pp.50-56
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• 1985

A common failure mechanism in bulk CMOS integrated circuits is the latch-up of parasitic SCR structure inherent in the bulk CMOS structure. Latch-up triggering and holding charac-teristics have been measured in the test devicrs which include conventional and Schottky-damped CMOS structures with various well depths and n+/p+ spacings. It is demonstrated that Schottky-clamped CMOS is more latch-up immune than conventional bulk CMOS. Finally, the simulation results by circuit simulation program (SPICE) are compared with measured results in order to verify the validity of the latch-up modal composed of nan, pnp transistors and two external resistors.

• Nano
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• 제13권12호
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• pp.1850138.1-1850138.6
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• 2018

Two-dimensional (2D) or layered materials have a great potential for applications in energy storage, catalysis, optoelectronics and gas separation. Fabricating novel 2D or quasi-2D layered materials composed of relatively abundant and inexpensive atomic species is an important issue for practical usage in industry. Here, we suggest the layer-structured AlOOH (Boehmite) as a promising candidate for such applications. Boehmite is a well-known layer-structured material and a single-layer can be exfoliated from the bulk boehmite by breaking the interlayer hydrogen bonding. We study atomic and electronic band structures of both bulk and single-layer boehmite, and also obtain the single-layer exfoliation energy using first-principles calculations.

• International Journal of Naval Architecture and Ocean Engineering
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• 제11권1호
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• pp.165-177
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• 2019

This paper considers corrosion wastage of two ship hull structure members as a part of investigated fuel oil tanks of 25 aging bulk carriers. Taking into account that many factors which influence corrosion wastage of ship hull structures are of uncertain nature, the related corrosion rate ($c_1$) is considered here as a real-valued continuous distribution, assuming that the corrosion wastage starts after 5, 6 or 7 years. In all considered cases, by using available data and applying three basic statistical tests, it is established that between two-parameter continuous distributions, normal, Weibull and logistic distributions are best fitted distributions for the mentioned corrosion rate ($c_1$). Note that the presented statistical, numerical and graphical results concerning two mentioned ship hull structure members allow to compare and discuss the corresponding probabilistic estimates for the corrosion rate ($c_1$).

• 한국자기학회지
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• 제19권3호
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• pp.81-84
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• 2009

상관효과 U가 전자구조와 자성에 미치는 영향을 검토하기 위하여 대표적 자성물질인 철의 덩어리, 단층 및 사슬 구조에 대해 연구하였다. 이를 위하여 U = 3 eV로 택하여, 총 퍼텐셜 보강 평면파동 에너지 띠 방법을 이용하여 LDA+U 및 GGA+U 근사 하에 전자구조 계산을 수행하였다. 비교를 위하여 LDA 및 GGA를 이용한 계산도 수행하였다. 그 결과 U의 효과를 포함시켰을 때 덩어리 철의 경우 자기모멘트가 $0.3{\mu}_B$ 증가하여 실험값이나 LDA 및 GGA 계산에 비해 과다하게 계산되는 것으로 나타났으나, 단층이나 사슬의 경우는 그렇게 큰 차이를 보이지 않았다. 이로부터 전자구조 계산 시대상 계에 따라 U의 효과를 적절히 고려하여야 함을 알았다.