• Journal of Radiation Protection and Research
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• v.34 no.2
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• pp.65-68
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• 2009

Metal-semiconductor contact is very important for the operating property of semiconductor detector. $Cd_{0.96}$ $Zn_{0.04}$ Te semiconductor crystal was grown with Bridgman method, and the crystal was cut and polished. EPMA (Electron Probe Micro Analyzer) and ICP-MS (Inductively Coupled Plasma Mass Spectrometry) analysis were done to obtain the chemical composition and impurity of the crystal. Metal contact was deposited with thermal evaporator on both sides of the crystal. Detectors with Au/CZT/Au and In/CZT/Au structure were made, and I-V curve and the energy spectrum were measured with the detectors. It could be seen that the detector with the In/CZT/Au structure has superior property than the detector with Au/CZT/Au structure when the crystal resistivity was low. However, the metal contact structure effect becomes low when the crystal resistivity was high.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.3
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• pp.383-387
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• 1998

The vacuum-Bridgman equipment for large size diameter (4 inch more over) crystal growth was organized simply and the $CaF_2$ single crystal which was grown in the conditions of growth rate of 2mm/hr, freezing temperature gradient of $12^{\circ}C$/cm, have analyzed to keep excellent properties. Using Mo thermal reflector of umbrella shape, it could be eliminated the formation of polycrystalline. The preferential growth direction was (111) and the calculated lattice parameter was $5.460 \AA$ by XRD peaks. The secondary phases, also, was not formed by means of powder-XRD analysis. The value of EPD is $1.4{\times}10^4 \textrm{cm}^{-2}$ and the optical quality, which is the transmittance is 91% up in UV region, is suitable for optical components of UV applications.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.2
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• pp.169-177
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• 1994

Dilute Al-Cu and Al-Mg alloys were solidified unidirectionally upward by Bridgman method. It is necessary that solute concentration of initial melt is uniform to be able to control the concentration of crystal. When solute concentration is not uniform, it can cause unusual macro-segregation in grown solid. A non-steady state solidification was observed where the solute concentration in the grown solid decreased with the progress of solidification, when a dilute Al-Cu melt with positive axial temeprature gradient was solidified. This was caused by leaking out of Cu-rich melt into the gap between ingot and crucible during melt-down and its sedimentation after complete melting. In the case of Al-Mg alloy, the solute concentration has a minimum in the middle of grown specimen because Mg-rich melt flowed down the gap between ingot and crucible and floated after complete melting. Uniform initial melt concentration can be achieved by the homogenization of the ingot or by the absence of the gap between ingot and crucible.

• Journal of the Korean Magnetics Society
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• v.19 no.5
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• pp.186-190
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• 2009

We investigated the magneto-optical properties and application of diluted magnetic semiconductors Cd$_{1-x}$Mn$_x$Te crystals with various Mn contents grown using a vertical Bridgman method. This material crystallizes in the zinc-blende structure for values of x < 0.82. The band-gap energy was depended on Mn mole fraction x linearly and increased with decreasing temperature. The Faraday rotation was increased as the photon energy increased near to that of the fundamental band gap and its increased with increasing Mn mole fraction. Optical isolator using the Cd$_{0.62}$Mn$_{0.38}$Te crystal shows that the isolation and insertion loss are 45 dB and 0.35 dB at 650 nm, respectively.

• Journal of Sensor Science and Technology
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• v.15 no.6
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• pp.379-385
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• 2006

Single crystal of p-$CdIn_{2}Te_{4}$ was grown in a three-stage vertical electric furnace by using Bridgman method. The quality of the grown crystal has been investigated by x-ray diffraction and photoluminescence measurements. From the photoluminescence spectra of the as-grown $CdIn_{2}Te_{4}$ crystal and the various heat-treated crystals, the ($D^{o}$, X) emission was found to be the dominant intensity in the photoluminescence spectrum of the $CdIn_{2}Te_{4}$:Cd, while the ($A^{o}$, X) emission completely disappeared in the $CdIn_{2}Te_{4}$:Cd. However, the ($A^{o}$, X) emission in the photoluminescence spectrum of the $CdIn_{2}Te_{4}$:Te was the dominant intensity like in the as-grown $CdIn_{2}Te_{4}$ crystal. These results indicated that the ($D^{o}$, X) is associated with $V_{Te}$ which acted as donor and that the ($A^{o}$, X) emission is related to $V_{Cd}$ which acted as acceptor, respectively. The p-$CdIn_{2}Te_{4}$ crystal was obviously found to be converted into n-type after annealing in Cd atmosphere. The origin of ($D^{o},{\;}A^{o}$) emission and its to phonon replicas is related to the interaction between donors such as $V_{Te}$ or $Cd_{int}$, and acceptors such as $V_{Cd}$ or $Te_{int}$. Also, the In in the $CdIn_{2}Te_{4}$ was confirmed not to form the native defects because it existed in a stable bonding form.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.6
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• pp.535-541
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• 1999

Low-dislocation-density large-diameter GaAs single crystals with low-residual-strain have been strongly required. We have developed dislocation-free 3-inch Si doped GaAs crystals for photonic devices, and low-dislocation-density low-residual-strain 4-inch to 6-inch semi-insulating GaAs crystals for electronic devices by Vertical Bridgman(VB) technique. We confirmed that VB substrates with low-residual-strain have higher resistance against slip-line generation during MBE process. VB-GaAs single crystals show uniform radial profile of resistivity reflecting to the flat solid-liquid interface during the crystal growth. Uniformity of micro-resistivity of VB-GaAs substrate is much better than of the LEC-GaAs substrate, which is due to the low-dislocation-density of VB-GaAs single crystals.

• Journal of the Korean earth science society
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• v.23 no.1
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• pp.52-58
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• 2002

A colorless and transparent zirconium oxide ($Zr_{0.73}Y_{0.27}O_{1.87}$) crystal has been synthesized by the Bridgman-Stockbager method. The gem-quality material is produced by adding 20${\sim}$25 wt.% $Y_2O_3$ (stabilizer) and 0.04 wt.% $Nd_2O_3$ (decolorising agent) to the $ZrO_2$ powder. It shows a vitreous luster with a slight oily appearance. Under a polarizing microscope, it shows isotropic nature with no appreciable anisotropism. Mohs hardness value and specific gravity is measured to be 8${\sim}$$8{\frac{1}{2}}$ and 5.85, respectively. Under ultraviolet light it shows a faint white glow. The crystal structure of yttria-stabilized zirconia with 0.27 at.% Y has been re-investigated, using single crystal X-ray diffraction, and confirmed to be a cubic symmetry, space group $Fm{\overline{3}}m$ ($O^5_h$) with a=5.1552(5) ${{\AA}}$, V=136.99(5) ${{\AA}}^3$, Z=4. The stabilizer atoms randomly occupy the zirconium sites and there are displacements of oxygen atoms with amplitudes of ${\Delta}/a{\sim}$0.033 and 0.11 along <110> and <111> from the ideal positions of the fluorite structure, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.207-213
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• 1996

A ternary compound semiconductor $Al_{x}$-Ga/1-x/Sb crystals which have energy gap from 0.7eV to 1.6ev at room temperature with the composition ratio were grown by using the vertical Bridgman method. The characteristics of $Al_{x}$-Ga/1-x/Sb were investigated in this study. The lattice constants of $Al_{x}$-Ga/1-x/Sb crystals with the composition ratio were appeared from 6.096$\AA$ to 6.135$\AA$ with the composition ratio. The electrical properties of the $Al_{x}$-Ga/1-x/Sb crystals measured the Hall effect by van der Pauw method at the magnetic field of 3 kilogauss and at room temperature. The resistivity of Te-doped $Al_{x}$-Ga/1-x/Sb crystals increased from 0.771 $\Omega$-cm to 5 $\Omega$-cm at room temperature with increasing the composition ratio. The mobility of Te-doped $Al_{x}$-Ga/1-x/Sb crystals varied with the composition ratio x, within the following three different regions, such as GaSb-like (0$\leq$x$\leq$0.3), intermediate (0.3$\leq$x$\leq$0.4) and AlSb-like (0.4$\leq$x$\leq$1).eq$1).

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.1
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• pp.19-31
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• 1996

To invetigate the impurity distribution in GaAs crystal grown by horizontal Bridgman method, we constructd the mathematical model describing heat transfer, mass transfer and fluid flow n transient growth of GaAs. Galerkin finite element method and implicit time integration were used to solve the equations and simulate the transient growth. The concentration distribution is similar to the case of diffusion controlled growth when Gr - 0. With the increase of Gr the concentration profile is distroted and the minimum solute concentration appears near the interface. As solidification prosceeds, interface deflection increases steadily and transverse segregation increases until mixing by flow becomes steady. The axial segregation increases with solidification. But, with high intensity of flow axial segregation becomes steady after short transient. At small and large Gr the result showed a good agreememt with the prediction Smith and Scheil.

• 대한방사선방어학회:학술대회논문집
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• 2010.04a
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• pp.186-187
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• 2010