• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.11a
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• pp.137-140
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• 1993

Electrical properties and thermal annealing effects of $C_{22}$-quinolium(TCNQ) Langmuir-Blodgett(LB) films were studied. Typical current-voltage(I-V) characteristics along the perpendicular direction chow an anomalous behavior of breakdown near the electric-field strength of $10^{6}$V/cm. To see the thermal influence of the specimen, current was measured as a function of temperature(20∼$180^{\circ}C$). It shows that the current increases about 4 orders of magnitude near 60∼$70^{\circ}C$ and remains constant far a while up to ∼$150^{\circ}C$ and then suddenly drops. Such increase of current near 60∼$70^{\circ}C$ seems tn be related to a softness of alkyl chains. Besides the electrical measurements, UV/visible absorption(300∼800 nm) of the thermally annealed sample was measured to see the internal-structure change. It is found that there are four characteristic peaks. At 494 nm, the optical absorption of the thermally annealed specimen at $60^{\circ}C$ starts increase and stays almost constant upto∼ $140^{\circ}C$. And eventually it disappears above $180^{\circ}C$. After heat treatment of the specimen up to $150^{\circ}C$, Uv/visible absorption was measured while cooling.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.1
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• pp.27-30
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• 2004

In this paper, a new small size Lateral Trench Electrode Power MOSFET is proposed. This new structure, called "LTEMOSFET"(Lateral Trench Electrode Power MOSFET), is based on the conventional MOSFET. The entire electrode of LTEMOSFET is placed in trench oxide. The forward blocking voltage of the proposed LTEMOSFET is improved by 1.6 times with that of the conventional MOSFET. The forward blocking voltage of LTEMOSFET is 250V. At the same size, a increase of the forward blocking voltage of about 1.6 times relative to the conventional MOSFET is observed by using TMA-MEDICI which is used for analyzing device characteristics. Because the electrodes of the proposed device are formed in trench oxide, the electric field in the device are crowded to trench oxide. We observed that the characteristics of the proposed device was improved by using TMA-MEDICI and that the fabrication of the proposed device is possible by using TMA-TSUPREM4.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.834-838
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• 2002

In this paper, we have fabricated 4H-SiC schottky diodes utilizing a metal-oxide overlap structure for electric filed termination. The barrier height and Ideality factor were measured by current-voltage, capacitance-voltage characteristics. Schottky barrier height(SBH) were 1.41ev for Ni and 1.35eV for Pt, 1.52eV for Pt/Ti at room temperature and Pt/Ti Schottky diode exhibited Ideality factor was 1.06 to 1.4 in the range of $25^{\circ}C{\sim}200^{\circ}C$. To improve the reverse bias characteristics, an edge termination technique is employed for Pt/Ti/4H-SiC Schottky rectifiers and the device show excellent characteristics with higher blocking voltage up to 780V compared with unterminated devices.

• Proceedings of the Korean Institute of Building Construction Conference
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• 2014.05a
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• pp.18-19
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• 2014

As issued the development of energy resources, EPC work process through the IT technology is essential for efficient business management, and systematic management of data generated in this process is needed. In domestic, the research related to system development for the collection and management of construction data detected in the field has been done continuously, but pipeline business target the long-distance in extreme cold weather, almost no cases have been studied up to now. Therefore, this research is aimed to derive the data item for efficient management in EPC Stage of pipeline business in extreme cold weather. WBS system of EPC work are classified easily at two levels, data items can be divided based on the type of document. In the future I will be expected to be the foundation of the systematic management of data generated in the EPC step-by-step of pipeline business.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.326-329
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• 2002

In this paper, we investigated a feasibility of cerium oxide(CeO$_2$) films as a buffer layer of MFIS(metal ferroelectric insulator semiconductor) type capacitor. CeO$_2$ layer were Prepared by two step process of a low temperature film growth and subsequent RTA (rapid thermal annealing) treatment. By app1ying an ultra thin Ce metal seed layer and N$_2$ Plasma treatment, dielectric and interface properties were improved. It means that unwanted SiO$_2$ layer generation was successfully suppressed at the interface between He buffer layer and Si substrate. The lowest lattice mismatch of CeO$_2$ film was as low as 1.76% and average surface roughness was less than 0.7 m. The Al/CeO$_2$/Si structure shows breakdown electric field of 1.2 MV/cm, dielectric constant of more than 15.1 and interface state densities as low as 1.84${\times}$10$\^$11/ cm$\^$-1/eV$\^$-1/. After N$_2$ plasma treatment, the leakage current was reduced with about 2-order.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.207-209
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• 2004

Currently, for satisfying the needs of scaled MOSFET's a high quality thin oxide dielectric is desired because the properties of conventional $SiO_2$ film are not acceptable for these very small sized transistors. As an alternative gate dielectric have drawn considerable alternation due to their superior performance and reliability properties over conventional $SiO_2$, to obtain the superior characteristics of ultra thin dielectric films, $N_2O$ grown thin oxynitride has been proposed as a dielectric growtuanneal ambient. In this study the authors observed process characteristics of $N_2O$ grown thin dielectric. In view points of the process characteristics of MOS capacitor, the sheet resistance of 4.07$[\Omega/sq.]$, the film stress of $1.009e^{10}[dyne/cm^2]$, the threshold voltage$(V_t)$ of 0.39[V], the breakdown voltage(BV[V]) of 11.45[V] was measured in PMOS. I could achieve improved electrical characteristics and reliability for deep submicron MOSFET devices with $N_2O$ thin oxide.

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.2
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• pp.120-131
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• 2007

A comprehensive short channel analytical model has been proposed for High Electron Mobility Transistor (HEMT) to obtain higher cut-off frequency maintaining the reliability of the device. The model has been proposed to consider generalized doping variation in the directions perpendicular to and along the channel. The effect of field plates and different gate-insulator geometry (T-gate, etc) have been considered by dividing the area between gate and the high band gap semiconductor into different regions along the channel having different insulator and metal combinations of different thicknesses and work function with the possibility that metal is in direct contact with the high band gap semiconductor. The variation obtained by gate-insulator geometry and field plates in the field and channel potential can be produced by varying doping concentration, metal work-function and gate-stack structures along the channel. The results so obtained for normal device structure have been compared with previous proposed model and numerical method (finite difference method) to prove the validity of the model.

• Journal of the Korean Society for Railway
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• v.9 no.6 s.37
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• pp.739-745
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• 2006

The role of maintenance in railway is going to be extended to improve the reliability of railway system in the aspect of Asset management gradually. In this paper, the meaning of reliability and safety in RCM which has been applied in order to improve the efficiency of maintenance is deduced. And the analysis task of reliability and safely which has been recommended in railway standards such as EN50126 and IEC62278 is reviewed in the aspect of RCM. Finally, the several ways are proposed to apply RCM to railway system through the comparison between the RCM procedure and the analysis procedure for the reliability and safety in railway standards. Hereafter, if the analysis of reliability and safety is performed with the concept of RCM in the beginning of railway business, it will be more efficient to improve the reliability and manage the railway asset.

• Proceedings of the Technology Innovation Conference
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• 2003.06a
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• pp.108-115
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• 2003

Government R&D Project Management in Korea has had considerable difficulties because of the lack of project monitoring systems and insufficient communication. The National Program for Tera-level Nanodevices (TND Program) is a ten-year R&D program for commercialization in the area of nano technology. Collaboration and communication among the various participants such as business companies, universities, and government R&D institutes are key success factors in this R&D program. TND Program office has developed a Web-based project management system. This system consists of mostly four sub-management functions: (1) Milestones management of all R&D projects; (2) DR (Design Review) management as the mechanism for checking the performance against milestones; (3) Project activity management using the WBS (Work Breakdown Structure); (4) Budget management. Additionally, it also has many R&D supporting functions such as technology information bulletin board, community management, and visual summary of project progress and performance. This system is effective for monitoring research project as well as measuring project performance of the overall research program. This Web-based system has become the useful tool of R&D moving target mechanism and effective communication and collaboration tool. System features and adoption process of the system are also suggested.

• Proceedings of the Korean Environmental Sciences Society Conference
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• 2005.05a
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• pp.241-244
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• 2005

The aim of this study was to determine the first outbreaks of nontoxic Gonyaulax polygramma Stein in Yeosu waters in place of harmful Cochlodinium polykrikoides Margalef, which has occurred annually in the same coastal region since 1995. The observation of cellular arrangement and structure by electron microscopy showed that G. polygramma isolated from Yeosu waters had a few spines connecting with mem-branes and prominent longitudinal ridges on the cell surface, with a cingular dis-placement 1.5 times their cell width. Furthermore, the location of the nucleus wasposterior of large oval formation according to electron microscopy. On 6 August, 2004,the first bloom of G. pozygramma occurred, the date of own its disappearance was with a maximum cell density of 8,000 cells ml$^{-1}$ on 21 August, 2004. During the period of this study, the horizontal distribution of sea water temperature and salinity showed a strong coastal front, whereas the front of DIN (Dissolved Inoganic Nitrogen) was significantly different between the occurrence and disappearance of G. polygramma blooms. These results suggested that the process of the breakdown of stratification by wind and a low level of inorganic nitrogen play important roles in the rapid growth of G. polygrmma, which is associated with a greater robustness in growth against DIN than that of C.polykrikoides in nature.