• Transactions of the Korean Society of Mechanical Engineers A
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• v.35 no.6
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• pp.583-589
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• 2011

The dielectric breakdown of bone-like materials subject to purely electric fields is investigated. In general, these materials consist of some layers with stronger dielectric strength and others with weaker dielectric strength in a parallel staggered pattern. The growth of the conductive channel is impeded during penetration of the weaker layer in the bone-like material because the electric-field concentration is relieved. The electric-field distribution around the head of the tubular channel is obtained from finite element analysis. The dielectric strength of the bone-like material is evaluated using the J integral, and some parameters affecting the dielectric strength are determined. It is shown that the J-integral values are reduced with an increase in the breakdown area in the weaker layer. It is also found that the ratio of the permittivity of the weaker layer to that of the stronger layer can strongly affect the dielectric breakdown.

• Journal of the Korean Vacuum Society
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• v.8 no.1
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• pp.36-42
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• 1999

Field emission behaviors from diamond-like carbon films were investigated. The films were deposited on n-type Si wafer by ion beam sputtering method using 3 cm Kaufman type ion source. Regardless of the film thicknesses and atomic bond structure, the emission current was much enhanced by electrical breakdown between anode and the film surface. The effective work function was estimated to be about 0.1 eV. In order to identify the emission site, tungsten tip was scanned the damaged region damaged region but localized to a specific site. Analysis using Auger electron spectroscopy and SEM shows that SiC compound was not a sufficient condition for the electron emission. This result showed that the enhanced emission was mainly due to the changes in the chemical bond of the damaged region rather than the enhanced electric field caused by the morphological change.

• Journal of the Society of Naval Architects of Korea
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• v.51 no.1
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• pp.16-25
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• 2014

To develop a sailing yacht successfully, systematic engineering information is required including technologies from various companies and know-how about sailing yacht. The engineering information about sailing yacht has a complex and extensive structure. Therefore, a robust and high-level of management system is needed to manage the information. In this paper, we design and propose Generic-YWBS (Generic-Yacht Work Breakdown Structure), a work breakdown structure for sailing yachts. The Generic-YWBS is aimed at constructing sailing yachts and contains contents about product- and process-oriented information of sailing yachts. In addition, the Generic-YWBS plays an important role in managing the engineering information as a basic schema of database and system architecture. The Generic-YWBS is derived from fundamental WBS design processes and various rules about sailing yachts, for example, ISAF (International Sailing Federation) equipment rule and IRC rating rule, and a generic structure concept is applied for flexibility. The Generic-YWBS is applicable for various purposes. We designed a detailed code system in order to apply the Generic-YWBS to contents management system. The series of activities are realized through a web-based RIA(Rich Internet Application) program. This program manages the YWBS structure in an XML schema, and the Generic-YWBS management application offers a customizing function to be adapted in the field.

• Transactions on Electrical and Electronic Materials
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• v.7 no.1
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• pp.16-20
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• 2006

In this paper, we investigated the effects of short-term oxygen plasma treatment of semiconducting silicone layer to improve interfacial performances in joints prepared with a insulating silicone materials. Surface characterizations were assessed using contact angle measurement and x-ray photoelectron spectroscopy (XPS), and then adhesion level and electrical performance were evaluated through T-peel tests and electrical breakdown voltage tests of treated semi-conductive and insulating joints. Plasma exposure mainly increased the polar component of surface energy from $0.21\;dyne/cm^2$ to $47\;dyne/cm^2$ with increasing plasma treatment time and then leveled off. Based on XPS analysis, the surface modification can be mainly ascribed to the creation of chemically active functional groups such as C-O, C=O and COH on semi-conductive silicone surface. This oxidized rubber layer is inorganic silica-like structure of Si bound with three to four oxygen atoms ($SiO_x,\;x=3{\sim}4$). The oxygen plasma treatment produces an increase in joint strength that is maximum for 10 min treatment. However, due to brittle property of this oxidized layer, the highly oxidized layer from too much extended treatment could be act as a weak point, decreasing the adhesion strength. In addition, electrical breakdown level of joints with adequate plasma treatment was increased by about $10\;\%$ with model samples of joints prepared with a semi-conducting/ insulating silicone polymer after applied to interface.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.9
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• pp.671-676
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• 2012

In this paper, TCAD assessment of 30-V class n-channel EDMOS (extended drain metal-oxide-semiconductor) transistors with DWFG (dual work function gate) structure are described. Gate of the DWFG EDMOS transistor is composed of both p- and n-type doped region on source and drain side. Additionally, lengths of p- and n-type doped gate region are varied while keeping physical channel length. Two-dimensional device structures are generated trough TSUPREM-4 and their electrical characteristics are investigated with MEDICI. The DWFG EDMOS transistor shows improved electrical characteristics than conventional device - i.e. higher transconductance ($g_m$), better drain output current ($I_{ON}$), reduced specific on-resistances ($R_{ON}$) and higher breakdown characteristics ($BV_{DSS}$).

• Journal of IKEEE
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• v.22 no.2
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• pp.339-343
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• 2018

Power semiconductors are semiconductors capable of controlling power over 1W and are mainly used as switches. This power semiconductor device has been developed with the goal of reducing power consumption and high breakdown voltage. This research was analyzed electrical characteristics of IGBT(Insulated Gate Biopolar Transistor) according to diffusion length of JFET region. The Diffusion length of JFET region was controlled by temperature and time using T-CAD simulator. As a result of experiments, we could obtain 1.14V low on state voltage drop by fixing 1440V breakdown voltage.

• Journal of Ginseng Research
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• v.16 no.1
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• pp.37-43
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• 1992

Structural changes of the endosperm of Panax ginseng C.A. Meyer from fertilization to germination were investigated by light microscope. The endosperm of the ginseng seed is cellular type. Since endosperm cells adjacent embryo continuously breakdown and disappear with the elongation of embryo, the real of endosperm is gradually decreased. As the anatropous ovules of immature seed with green seed coat developes more and more, ovary cells adjacent ovary cavity become abundant by the periclinal division, their size is decreased, hypotrophy of cell wall discern, and they are gradually differentiated in seed coat. Though embryo responds strongly to basic dye at the stage of completion of endosperm formation, tissue of endosperm responds to acidic dye positively Cell wall of embryo and endosperm are composed of primary cell wall not lignified. Endosperm cells adjacent embryo begin to breakdown in the endosperm tissue of indehiscent seed before the beginning of the after-ripening. Dehiscent seed of which seed coat is opened through after-ripening represent the form as a seedling in the result of embryo developments with the formation of organs; radicle, cotyledon, plumule. Umbilifom layer represents strong positive response to the toluidine blue and the basic function. Umbiliform layer that endosperm cells breakdown and disappear is observed clearly at the periphery of the embryo cotylemon, while slightly at the periphery of the radicle.

• Journal of the Korean Institute of Telematics and Electronics
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• v.20 no.3
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• pp.33-39
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• 1983

New Schottky devices with thin stepped oxide layer (about 1000 ${\AA}$) along the edge of metal-semiconductor junction have been designed and fabricated. The breakdown voltages of these diodes have been compared with those of conventional metal overlap and P guard ring Schottky diode structures. Thin stepped oxide layer has been grown by the process of T.C.E. oxidation. In order to compare and demonstrate the improved down phenomena of these devices, conventional metal overlap diode and P guard ring which have the same dimension with new devices have also been integrated in a same New Schottty devices structured with thin stepped oxide layer have shown significant improvement in breakdown phenomena compared with conventional diodes.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.4
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• pp.225-230
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• 2016

Effect of electrolyte composition and concentration on PEO coating layer were investigated. Mg alloy, Surface of AZ31 and AZ91 were oxidized using PEO with different electrolyte system, Na-P and Na-Si. and applied voltage and concentration. We measured thickness, roughness, X-ray crystallographic analysis and breakdown voltage of the oxidized layer. When increasing concentration of electrolyte, the thickness of oxide layer also increased too. And roughness also increased as concentration of electrolyte increasing. Breakdown voltage of coated layer showed same behavior, the voltage goes high as increasing thickness of coating layer, as increasing concentration of electrolyte, and increasing applied voltage of PEO. $Mg_2SiO_4$ phase were observed as well as MgO.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.941-943
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• 1999

In this paper, the AC breakdown properties to investigate the electrical properties of gate oxide layer in MOSFET was studied. 5 inch arsenic epi-wafer is selected as an experimental specimen, the power MOSFET of a general MOS structure was made. In order to analyze the physical properties of the specimen, the SIMS(secondary ion mass spectroscopy) was used. As the experimental condition, the experiment al of the AC breakdown characteristics was performed when the thickness of gate oxide layer is $600[\AA]$ and $800[\AA]$, the resistivity is $1.2[\Omega{\cdot}cm]$, $1.5[\Omega{\cdot}cm]$ and $1.8[\Omega{\cdot}cm]$, and the diffusion time is 110[min] and 150[min] in temperature $30[^{\circ}C]{\sim}100[^{\circ}C]$. From the analysis result of the SIMS spectrum, it is confirmed that the dielectric strength is decreased by contribution of the impurities ad dition as increasing in thickness of the gate oxide layer in MOSFET.