• Title/Summary/Keyword: breakdown electric field

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Fabrication of Metal-insulator-metal Capacitors with SiNx Thin Films Deposited by Plasma-enhanced Chemical Vapor Deposition

  • Wang, Cong;Kim, Nam-Young
    • Transactions on Electrical and Electronic Materials
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    • v.10 no.5
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    • pp.147-151
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    • 2009
  • For integrated passive device (IPD) applications, we have successfully developed and characterized metalinsulator-metal (MIM) capacitors with 2000 $\AA$ plasma-enhanced chemical vapor deposition (PECVD) silicon nitride which are deposited with the $SiH_4/NH_3$ gas mixing rate, working pressure, and RF power of PECVD at $250^{\circ}C$. Five PECVD process parameters are designed to lower the refractive index and lower the deposition rate of $Si_3N_4$ films for the high breakdown electric field. For the PECVD process condition of gas mixing rate (0.957), working pressure (0.9 Torr), and RF power (60 W), the atomic force microscopy (AFM) root mean square (RMS) value of about 2000 $\AA$ $Si_3N_4$ on the bottom metal is lowest at 0.862 nm and the breakdown electric field is highest at about 8.0 MV/cm with a capacitance density of 326.5 pF/$mm^2$. A pretreatment of metal electrodes is proposed, which can reduce the peeling of nitride in the harsh test environment of heat, pressure, and humidity.

The Formation and Characteristics of Laser CVD SiON Films (Laser CVD에 의한 SiON막의 형성과 그 특성)

  • Kwon, Bong-Jae;Park, Jong-Wook;Cheon, Young-Il;Lee, Cheol-Jin;Park, Ji-Soon;Sung, Yung-Kwon
    • Proceedings of the KIEE Conference
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    • 1991.11a
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    • pp.241-244
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    • 1991
  • In this paper, we introduced Silicon Oxynitride films deposited by Laser CVD, and evaluated the electrical breakdown of these films by TZDB(Time Zero Dielectric Breakdown) and TDDB(Time Dependent Dielectric Breakdown) test. In addition, high frequency C-V test was done in order to calculate hysterisis and flatband voltage(before and after electric field stress). Failure times against eletric field are examined and electric field accelation factor $\beta$ are obtained, and long term reliability was also described by extrapolating into life time in the operating voltage(5V). In this experiments, the deposited films with increased temperature represented small flatband voltage, hysterisis and favorable breakdown characteristics, this is why the hydrogen in the film was decreased and the film was densified, long term reliability was good in the laser CVD SiON films.

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Decreasing Technique of the Electric-field Intensity on Transmission Conductor Surface using the Hybrid Conductor Bundle (2종소도체 배열방식을 적용한 송전도체 표면전계강도 저감기법)

  • Lee, Dong-Il;Sin, Gu-Yong;Kim, Jeong-Bu
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.48 no.7
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    • pp.542-549
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    • 1999
  • Corona discharges form at the surface of a transmission line conductor when the electric-field intensity on the conductor surface exceeds the breakdown strength of air. In order to decrease the electric-field intensity on the conductor surface, a new 6 conductor bundle has been studied. This bundle, hybrid conductor bundle, consists of using a larger subconductor at the bottom two conductor positions in the 6-conductor bundles of each phase of the line. The electric field on these two larger subconductors is reduced which in turn reduces the corona noise. It is shown that this is a better solution for decreasing the electric-field intensity than ether the conventional bundle or the asymmetric bundle proposed by EPRI.

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Electrical Properties for Micro-and-Nano- Mixture Composites using Electric Field Dispersion (전기장분산법을 이용한 나노와 마이크로 혼합된 콤포지트의 전기적 특성)

  • Cho, Dae-Lyoung;Kim, Jong-Ho;Park, Jae-Jun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.03b
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    • pp.32-32
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    • 2010
  • A epoxy/multilayered silicate nanocomposite was prepared by a new AC electric application method and micro silica particle was poured into the nanocomposite in order to prepare epoxy/micro-and-nano- mixed composites (EMNC). Electric insulation breakdown strength was measured in a sphere-sphere electrode system designed for the prevention of edge breakdown and the data were estimated by Weibull plot. As the exfoliated silicate nano-plates were homogeniously dispersed in the micro silica particles, the insulation property was higherd.

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Analysis of Insulating Reliability in Epoxy Composites using Weibull Distribution Equation (와이블 분포식을 이용한 에폭시 복합체의 절연 신뢰도 분석)

  • Park, No-Bong;Lim, Jung-Kwan;Park, Yong-Pil
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2003.05a
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    • pp.813-816
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    • 2003
  • The dielectric breakdown of epoxy composites used for transformers was experimented and then its data were applied to Weibull distribution probability. First of all, speaking of dielectric breakdown properties, the more hardener increased, the stronger breakdown strength became at low temperature because of cross-linked density by the virtue of ester radical. The breakdown strength of specimens with filler was lower than it of non-filler specimens because it is believed that the adding filler forms interface and charge is accumulated in it, therefore the molecular motility is raised and the electric field is concentrated. In the case of filled specimens with treating silane, the breakdown strength become much higher. Finally, according to Weibull distribution analysis, reducing breakdown probability of equipment insulation lower than 0.1 % level requires the allowable field intensity values to be kept under 21.5 MV/cm.

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A Study on the Electrical Breakdown Characteristics of Air according to Electrode Gap (전극 간격에 따른 공기의 절연파괴 특성에 관한 연구)

  • Kang, Jong O;Lee, Onyou;Kim, Junil;Bang, Seungmin;Lee, Hongseok;Lee, Jong Doug;Kang, Hyoungku
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • v.63 no.4
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    • pp.301-306
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    • 2014
  • Recently in accordance with the rapid development of the industrial society, the accidents caused by dielectric breakdown have been increasing in power grid. It is important to prevent the dielectric breakdown of a high voltage apparatus to reduce the damage from electrical hazards. To establish an electrically reliable database of insulation design criteria for high voltage apparatus, a study on dielectric characteristics test is indispensable. In this study, dielectric characteristics according to field utilization factors (${\xi}$) which are represented as the ratio of mean electric field to maximum electric field are investigated. the dielectric breakdown experiments by using several kinds of electrode systems made with stainless steel are performed by AC breakdown voltage under air-insulation. Also, the experimental results are analyzed by the Weibull distribution. As a result, it is found that the dielectric characteristics of air-insulation are determined by ${\xi}$ as well as arrangement of electrode systems. It is considered that the results of this study would be applicable to designing the air-insulated high voltage apparatuses.

Impulse Breakdown Characteristics of Nonuniform Field Gap in SF_6-N_2 Mixtures ($SF_6-N_2$혼합기체 중에서 불평등전계 갭의 임펄스 절연파괴 특성)

  • Lee, Bok-Hee;Lee, Kyoung-Ok;Kim, Jung-Il
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.49 no.9
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    • pp.533-540
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    • 2000
  • Lightning impulse $(1.2/44[\mus])$ and damped oscillating impulse $(Osc./44[\mus])$ : 0.83[MHz]) breakdown characteristics in sulphur-hexafluoride/nitrogen (SF6-N2) mixtures were investigated. The predischarge currents were observed to clarify the breakdown mechanism. th experiments were carried out under nonuniform electric fields disturbed by a needle-shaped protrusion whose length and diameter are 10[mm] and 1[mm] at total gas pressure up to 0.5[MPa] with nitrogen concentrations varying from 5 to 20[%] in the mixture. The electrical breakdowns of SF6-N2 mixtures for both the positive and negative polarities develop with steplike pulses in leader mechanism and the breakdown voltage -time (V-t) characteristics were affected by the space charge. The voltage-time curves for the negative oscillating impulse voltage were extended over the longer time range. The minimum breakdown voltages for the negative lightning and oscillating impulse voltage were higher than those for the positive ones. in particular the positive breakdown voltages were independent of the gas pressure.

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An Analysis on Optimal Design and Electrical Characteristics of CT-IGBT(Circular Trench IGBT) (CT-IGBT의 최적 설계 및 전기적 특성에 관한 분석)

  • Kwak, Sang-Hyeon;Seo, Jun-Ho;Seo, In-Kon;Sung, Man-Young
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.22-23
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    • 2008
  • The conventional IGBT has two problems to make the device taking high performance. The one is high on state voltage drop associated with JFET region, the other is low breakdown voltage associated with concentrating the electric field on the junction of between p base and n drift. This paper is about the structure to effectively improve both the lower on state voltage drop and the higher breakdown voltage than the conventional IGBT. For the fabrication of the circular trench IGBT with the circular trench layer, it is necessary to perform the only one wet oxidation step for the circular trench layer. Analysis on both the on state voltage drop and the Breakdown voltage show the improved values compared to the conventional IGBT structure. Because the circular trench layer disperses electric field from p base and n drift junction to circular trench, the breakdown voltage increase. The on state voltage drop decrease due to reduction of JFET region and direction change of current path which pass through reversed layer channel.

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Characteristics of lightning impulse preliminary breakdown discharge under non-uniform electric field in $SF_6/CO_2$ mixtures (불평등전장에서 $SF_6/CO_2$ 혼합기체의 뇌임펄스 전구방전특성)

  • Lee, B.H.;Oh, S.K.;Baek, Y.H.;Ahn, C.H.;Jeon, D.K.
    • Proceedings of the KIEE Conference
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    • 2005.07c
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    • pp.2140-2142
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    • 2005
  • This paper presents the experimental results on the preliminary breakdown characteristics under a highly non-uniform electric field in $SF_6/CO_2$ gas mixtures. The impulse preliminary breakdown developments are investigated by the measurements of corona current and light emission images. As a result, the preliminary breakdown development mechanisms for both positive and negative polarities are same. The first streamer corona is initiated at the tip of needle electrode, and the leaders develop with a stepwise propagation and bridge the test gap. The pause time of leader pulses in the positive polarity is significantly shorter than that in the negative polarity. Also, the time interval between the first streamer corona onset and breakdown in the negative polarity was much longer than that in the positive polarity The discharge channel paths in the positive polarity were zigzag. On the other hands, the leader channel in the negative polarity was thicker than that in the positive polarity.

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An Analysis of IGBT(Insulator Gate Bipolar Transistor) Structure with an Additional Circular Trench Gate using Wet Oxidation (습식 산화를 이용한 원형 트렌치 게이트 IGBT에 관한 연구)

  • Kwak, Sang-Hyeon;Kyoung, Sin-Su;Sung, Man-Young
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.11
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    • pp.981-986
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    • 2008
  • The conventional IGBT has two problems to make the device taking high performance. The one is high on state voltage drop associated with JFET region, the other is low breakdown voltage associated with concentrating the electric field on the junction of between p base and n drift. This paper is about the structure to effectively improve both the lower on state voltage drop and the higher breakdown voltage than the conventional IGBT. For the fabrication of the circular trench IGBT with the circular trench layer, it is necessary to perform the only one wet oxidation step for the circular trench layer. Analysis on both the on state voltage drop and the breakdown voltage show the improved values compared to the conventional IGBT structure. Because the circular trench layer disperses electric field from the junction of between p base and n drift to circular trench, the breakdown voltage increase. The on state voltage drop decrease due to reduction of JFET region and direction changed of current path which pass through reversed layer channel. The electrical characteristics were studied by MEDICI simulation results.