• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 추계학술대회 논문집 학회본부 C
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• pp.540-542
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• 2000

This paper describes the particle-initiated breakdown characteristics of various spacers, which have a ribbed surface, in the presence of a metallic particle. The particle was attached on the surface of each spacer. The breakdown voltages were measured by changing the length and thickness of the rib. Also the electrical field analyses were performed. As a result, the breakdown voltage of the spacer with two ribs was highest, and it was varied by the length and the thickness of the rib. Especially, in case of the rib with round edge, the breakdown voltage was higher than that with rectangular edge, which complied with the result through the field analysis.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 C
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• pp.1921-1923
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• 2000

This paper describes the particle-initiated breakdown characteristics of various spacers, which have a ribbed surface, in the presence of a metallic particle. The particles was attached on the surface of each spacer. The breakdown voltages were measured by changing the particle position on the spacer, the length and thickness of the rib. Also the electrical field analyses were performed. As a result, the breakdown voltage of the spacer with two ribs was highest, and it was varied by the length and the thickness of the rib. Especially, in case of the rib with round edge the breakdown voltage was higher than that with rectangular edge, which complied with the result through the field analysis.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.92-95
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• 2001

The dielectric breakdown of epoxy composites used for transformers was experimented and then its data were simulated by Weibull distribution probability. First of all, speaking of dielectric breakdown properties, the more hardener increased the stronger breakdown strength at low temperature because of cross-linked density by the virtue of ester radical. The breakdown strength of specimens with filler was lower than it of non-filler specimens because it is believed that the adding filler forms interface and charge is accumulated in it, therefore the molecular motility is raised and the electric field is concentrated. In the case of filled specimens with treating silane, the breakdown strength become much higher Finally, from the analysis of weibull distribution, it was confirmed that as the allowed breakdown probability was given by 0.1[%], the applied field value needed to be under 21.5 [Mv/cm].

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.414-419
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• 2002

The dielectric breakdown of epoxy composites used for transformers was experimented and then its data were simulated by Weibull distribution probability. First of all, speaking of dielectric breakdown properties, the more hardener increased the stronger breakdown strength at low temperature because of cross-linked density by the virtue of ester radical. The breakdown strength of specimens with filler was lower than it of non-filler specimens because it is believed that the adding filler forms interface and charge is accumulated in it, therefore the molecular motility is raised and the electric field is concentrated. In the case of (idled specimens with treating silane, the breakdown strength become much higher Finally, from the analysis of weibull distribution, it was confirmed that as the allowed breakdown probability was given by 0.1[%], the applied field value needed to be under 21.5 MV/cm.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 일렉트렛트 및 응용기술
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• pp.212-217
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• 2002

The dielectric breakdown of epoxy composites used for transformers was experimented and then its data were simulated by Weibull distribution probability. First of all, speaking of dielectric breakdown properties, the more hardener increased the stronger breakdown strength at low temperature because of cross-linked density by the virtue of ester radical. The breakdown strength of specimens with filler was lower than it of non-filler specimens because it is believed that the adding filler forms interface and charge is accumulated in it, therefore the molecular motility is raised and the electric field is concentrated. In the case of filled specimens with treating silane, the breakdown strength become much higher Finally, from the analysis of weibull distribution, it was confirmed that as the allowed breakdown probability was given by 0.1[%], the applied field value needed to be under 21.5 MV/cm.

• E2M - 전기 전자와 첨단 소재
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• 제7권2호
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• pp.138-144
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• 1994

Electrical conduction phenomena of $C_{22}$-quinolium(TCNQ) Langmuir- Blodgett(LB) films are reported through a study of current-voltage(I-V) characteristics along a perpendicular direction. The I-V characteristics were investigated by applying a step or a pulse voltage to the specimen as well as changing temperatures in the range of 20-250[.deg. C] It show an ohmic behavior in low-electric field, and a nonohmic behavior in high-electric field. This nonohmic behavior has been interpreted in terms of a conduction mechanism of space-charge limited current and Schottky effect. When the electric field is near the strength of 10$_{6}$ V/cm, there occur anomalous phenomena similar to breakdown. When step or pulse voltage is applied, the breakdown voltage shifts to the higher one as the step or pulse time width becomes shorter. To see the influence of temperature, current was measured as a function of temperature under the several bias voltages, which are lower than that of breakdown. It shows that the current increases to about 103 times near 60-70[.deg. C], and remains constant for a while up to around 150[.deg. C] and then suddenly drops. We have also performed a DSC(differential scanning calorimetry) measurement with $C_{22}$-quinolium(TCNQ) powder in the range of 30-300[.deg. C]. These results imply that the anomalous phenomena occuring in the high electric field are caused by the electrical and internal thermal effect such as a joule heating.ating.

• 한국컴퓨터정보학회논문지
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• 제26권2호
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• pp.53-60
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• 2021

본 논문에서는 전기 전자부품 및 기구의 절연재료로 널리 적용되고 있는 에폭시 복합재료의 절연 특성 및 신뢰도를 파악하고자 한다. 이를 위해 경제적, 기계적 요인에 의해 필수적으로 첨가되어야 하는 충진재의 분포에 따른 전계 변화를 예측하기 위하여 전계해석 시뮬레이터를 이용하여 그 결과를 확인하였다. 또한 직류 전압 인가 조건하에서 주변 온도 변화 및 충진재 분포에 따른 절연파괴시험을 수행하였고 그 변화를 관찰하였다. 시편은 에폭시 수지에 충진재를 0, 50, 100[phr] 첨가하여 3종류가 제작되었으며 모든 시편의 경우에서 온도가 증가함에 따라 절연파괴강도가 저하됨을 확인하였다. 시뮬레이션 결과 및 실제 절연강도시험 결과를 비교 고찰하여 전기 기구의 절연설계에 필요한 기술적 적용 가능성을 확인하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.191-192
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• 2005

The reverse breakdown voltages of 4H-SiC SBD(schottky barrier diode)s with FP(Field Plate) and/or FLR(Field Limiting Ring) as a edge termination, were investigated. The breakdown voltages of SBDs with FP ware investigated varying the overlap width from $1{\mu}m$ to $30{\mu}m$. The maximum average breakdown voltages was 475V. There is no significant changes for the devices with overlap width of between $5{\mu}m\sim30{\mu}m$. It was confirmed that the dielectric breakdown of the thin thermal oxide is main cause of device failure. However, the breakdown voltage of SBD with FLR was 1400V even though the FLR edge termination structure was not optimized.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2001년도 추계종합학술대회
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• pp.724-728
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• 2001

본 연구에서는 에폭시 수지를 시료로 선정, 5 종의 배합비로 제작한 시편에 대해 절연 파괴 실험을 하여 얻어진 데이터를 수명 평가나 파괴 통계에서 주로 활용하는 와이블 분포식을 이용, 임의의 허용 파괴 확률에서의 허용인가 전계값을 추정, 안전성을 판단하기 위해 경년 열화데이터의 통계 처리 방법을 제안하였다. 그 결과, 경화제 비율이 증가하면 에폭시 경화물의 에스터화로 인해 가교 밀도가 증가함으로써 저온에서의 파괴 강도가 높아졌으며, 유리 전이 온도(Tg) 영역인 11$0^{\circ}C$ 부근에서는 분자 운동이 활발해짐으로써 급격히 파괴 강도가 저하하였다. 또한, 충진제를 첨가한 경우 접합 계면에 전자가 가속되어 전반적인 파괴 강도는 무충진에 비해 낮게 나타났으며, 실란 처리를 한 경우에는 계면 접합 상태가 개선되어 충진제만을 첨가한 시료보다 좋은 절연성을 나타냈다. 와이블 분포의 분석으로 부터 기기 절연의 허용 파괴 확률을 0.1 % 이하로 낮추기 위해서는 허용인가 전계값이 21.5 ㎹/cm 이하가 되어야함을 알 수 있었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1989년도 추계학술대회 논문집 학회본부
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• pp.114-118
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• 1989

Due to the increased integration density of VLSI circuits a highly reliable thin oxide film is required to fabricate a small geometry MOS device. The behavior of thermal $SiO_2$ under high electric field and current condition has a major effect on MOS device degration and also the practical use of MOS device under irradiation has cause the degration of thin oxide films. In this paper, in order to evaluate the reliability of thin oxides with no stress applied and stressed by the irradiation under low electric field, the tests of TDDB (Time-dependent-dielectric breakdown) are used. Failure times against electric field are examined and acceleration factor is obtained for each case. Based on the experimental data, breakdown wear out limitation for thin oxide films is characterised.