• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.509-510
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• 2007

The Breakdown properties of epoxy composites are used for transformers and sensor, which has been studied. As a result, From the measurements of breakdown voltage, the more hardener is increased the stronger breakdown strength at low temperature because the ester of hardener is increased. Breakdown strength at the high temperature is decreased because the temperature at $110^{\circ}C$ is near at $T_g$. When the filler is added, between epoxy and silica is formed interface. Therefore the charge is accumulated in it, and the electric field is concentrated, and breakdown strength is decreased than non-filled specimens. In the case of specimens, the treated with silane, the breakdown strength becomes much higher since this is suggested that silane coupling agent has been improved chemical bonding in the interfaces and has been relaxed the electric filed concentration.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.8
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• pp.1719-1724
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• 2004

In this paper, we have proposed a new structure of LDMOST, which has been expected as a next generation RF power device, to improve the BV(Breakdown Voltage) characteristics. The proposed structure, named external field ring, is formed around a drift region by the three dimensional structure. The external field ring relieves the electric field in the drift region and improves the BV characteristics. By the three dimensional TCAD simulations, it was found that the BV of LDMOST was increased by the increase of the junction depth and doping concentration of the external field ring. Therefore, the BV characteristics of the LDMOST can be remarkably improved by addition of external field ring using an existing p+ sinker process.

• Progress in Superconductivity and Cryogenics
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• v.15 no.4
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• pp.10-14
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• 2013

We have clearly investigated with respect to the survival of the insulator at cryogenic temperature under the electrical stress. The breakdown and voltage-time characteristics of turn-to-turn models for point contact geometry and surface contact geometry using copper multi wrapped with polyimide film for an HTS transformer were investigated under AC and impulse voltage at 77 K. Polyimide film (Kapton) 0.025 mm thick is used for multi wrapping of the electrode. As expected, the breakdown voltages for the surface contact geometry are lower than that of the point contact geometry, because the contact area of the surface contact geometry is lager than that of the point contact geometry. The time to breakdown t50 decreases as the applied voltage is increased, and the lifetime indices increase slightly as the number of layers is increased. The electric field amplitude at the position where breakdown occurs is about 80 % of the maximum electric field value. The relationship between survival probability and the electrical stress at cryogenic temperature was evident.

• Journal of IKEEE
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• v.23 no.3
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• pp.756-761
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• 2019

In this paper, we propose SC-SJ(Shielding Connected-Super Junction) UMOSFET structure in which p-pillars of conventional 4H-SiC Super Junction UMOSFET structures are placed under the shielding region of UMOSFET. In the case of the proposed SC-SJ UMOSFET, the p-pillar and the shielding region are coexisted so that no breakdown by the electric field occurs in the oxide film, which enables the doping concentration of the pillar to be increased. As a result, the on-resistance is lowered to improve the static characteristics of the device. Through the Sentaurus TCAD simulation, the static characteristics of proposed structure and conventional structure were compared and analyzed. The SC-SJ UMOSFET achieves a 50% reduction in on-resistance compared to the conventional structure without any change in the breakdown voltage.

• 한국연소학회:학술대회논문집
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• 2014.11a
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• pp.191-194
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• 2014

The characteristics of laminar free jet flow with having applied AC electric fields have been investigated experimentally. A single electrode configuration was adopted such that electric fields were applied directly to nozzle and thus the surrounding could be an infinite ground. The experimental results showed that the jet flow with AC was modified significantly. At a certain axial distance, the laminar fuel stem was broken down and subsequently it was separated into three parts when AC electric fields were applied over a certain voltage in a range of frequencies less than 120 Hz. The breakdown point was measured by varying applied AC voltage and frequency. The effect of applying electric fields to jet flow was discussed in detail.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.9
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• pp.456-465
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• 2001

In this paper, breakdown voltages in $SF_6-N_2$ mixtures were experimentally investigated to understand characteristics of dielectric strength and physical phenomena in nonuniform field disturbed by a needle shape protrusion. The test voltages are the lightning impulse$(\pm1.2/44 \mus)$ and the damped oscillatory impulse$(\pm400 ns / 0.83 MHz)$ voltages which can be occurred by the operation of disconnecting switches in gas-insulated switchgears(GIS). The effects of the polarity and wave shape of the test voltages, and the gas pressure on the V-t characteristics were in detail examined. The V-t characteristic curves were measured in different two ways : (1) one is the method by taking the maximum voltage recorded at or prior to breakdown against the time to breakdown, that is, the Procedures recommended in IEC 60060-1, (2) the other is the method by taking the voltage at the instant of chopping against the time to breakdown. As a result, the V-t characteristics of $SF_6-N_2$ mixtures in nonuniform electric field were significantly affected by the polarity and wave shape of the applied voltages. The positive breakdown voltages resulted in lower breakdown voltages in the time ranges considered, and the V-t curves for the negative oscillatory impulse voltage were extended over the longer time range. For the lightning impulse voltages, the V-t curves obtained by IEC Pub. 60060-1 were nearly same with the V-t curves obtained by the voltage at the instant of chopping against the time to breakdown. It is clear that the actual breakdown voltages were much lower than the maximum voltages appearing at or prior to breakdown because of the displacement current produced as a result of the dV/dt during the oscillatory transient voltage app1ication. The scattering of the negative actual breakdown voltages was much larger than that of the positive.

• Progress in Superconductivity and Cryogenics
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• v.14 no.3
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• pp.38-42
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• 2012

Fixtures such as bushings in terminations of high temperature superconducting(HTS) power cable systems are subjected to high voltages, which have to transition from ambient to cryogenic temperatures. As such it is imperative to ensure the integrity of the dielectrics under all operating conditions, including thermal aspects brought about by the passage of current. Gaseous helium(GHe) at high pressure is regarded as a potential coolant for superconducting cables. The dielectric aspects of cryogenic helium gas are both complex and demanding. In this experimental study we looked at the interface between a smooth epoxy surface and high pressure helium gas in a homogeneous electric field. The alternating current(AC) flashover voltages of epoxy samples are presented. The results have been analyzed by using Weibull statistics. In addition to the behavior of the epoxy in gaseous helium as a function of pressure and temperature we also present data of the characteristics of the epoxy in mineral oil and in liquid nitrogen($LN_2$). The breakdown characteristics of a uniform field gap in gaseous helium as a function of pressure and temperature under AC, direct current(DC) and lightning impulse voltages are also given. Electric field calculations have been made for one of the experimental geometries in an attempt to explain some of the anomalies in the experimental results.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.35 no.6
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• pp.583-589
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• 2011

The dielectric breakdown of bone-like materials subject to purely electric fields is investigated. In general, these materials consist of some layers with stronger dielectric strength and others with weaker dielectric strength in a parallel staggered pattern. The growth of the conductive channel is impeded during penetration of the weaker layer in the bone-like material because the electric-field concentration is relieved. The electric-field distribution around the head of the tubular channel is obtained from finite element analysis. The dielectric strength of the bone-like material is evaluated using the J integral, and some parameters affecting the dielectric strength are determined. It is shown that the J-integral values are reduced with an increase in the breakdown area in the weaker layer. It is also found that the ratio of the permittivity of the weaker layer to that of the stronger layer can strongly affect the dielectric breakdown.

• Journal of Korean Vacuum Science & Technology
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• v.4 no.1
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• pp.33-37
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• 2000

Properties of electrical discharge in flames and influence of plasma electrons on gas neutrals are investigated by making use of the ionization cross section of air. Frames have three distinctive features. They are hot, emit light and are weakly ionized. We investigate influence of these three characteristics of flames on the electrical breakdown. It is found that the breakdown electric field in flames is inversely proportional to the flame temperature T$\_$g/, thereby easily generating plasmas in flames. A swarm of low-energy electrons in flames would allow a significant population of electronically excited states of flame molecules to be formed. Therefore, the analysis shows that the electronic excitation of flame molecules may also considerably reduce the breakdown field. Plasma electrons generate atomic oxygen by the electron attachment of oxygen molecules in high-pressure flames. These oxygen atoms are the most reactive radicals in flames for material oxidation.

• Journal of IKEEE
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• v.11 no.4
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• pp.247-251
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• 2007

The recessed gate IGBT has a lower on-state voltage drop compared with the DMOS IGBT, because there is no JFET resistance. But because of the electric field concentration in the corner of the gate edge, the breakdown voltage decreases. This paper is about the new structure to effectively improve the Vce(sat) voltage without breakdown voltage drop in 1700V NPT type recessed gate IGBT with p floating shielding layer. For the fabrication of the recessed gate IGBT with p floating shielding layer, it is necessary to perform the only one implant step for the shielding layer. Analysis on the Breakdown voltage shows the improved values compared to the conventional recessed gate IGBT structures. The result shows the improvement on Breakdown voltage without worsening other characteristics of the device. The electrical characteristics were studied by MEDICI simulation results.