• Korean Chemical Engineering Research
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• 제54권1호
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• pp.108-113
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• 2016

A miniaturized lab-scale Cu plating cell for the metallization of electronic devices was fabricated and its deposit uniformity and profile were investigated. The plating cell was composed of a polypropylene bath, an electrolyte ejection nozzle which is connected to a circulation pump. In deposit uniformity evaluation, thicker deposit was found on the bottom and sides of substrate, indicating the spatial variation of deposit thickness was governed by the tertiary current distribution which is related to $Cu^{2+}$ transport. The surface morphology of Cu deposit inside photo-resist pattern was controlled by organic additives in the electrolyte as it led to the flatter top surface compared to convex surface which was observed in the deposit grown without organic additives.

• Journal of Electrical Engineering and Technology
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• 제11권4호
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• pp.961-968
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• 2016

The non-uniform distribution of contamination on insulator surface has appreciable effects on flashover voltage, and corresponding researches are valuable for the better selection of outdoor insulation. In this paper, two typical types of porcelain and glass insulators which are widely used in ac lines were taken as the research subjects, and their corrections of AC flashover voltage under non-uniform pollution were studied. Besides, their flashover characteristics under different ratio (T/B) of top to bottom surface salt deposit density (SDD) were investigated, including the analysis of flashover voltage, surface pollution layer conductivity and critical leakage current. Test results gave the modified formulas for predicting flashover voltage of the two samples, which can be directly applied in the transmission line design. Also, the analysis delivered that, the basic reason why the flashover voltage increases with the decrease of T/B, is due to the decrease of equivalent surface conductivity of the whole surface and the decrease of critical leakage current. This research will be of certain value in providing references for outdoor insulation selection, as well as in proposing more information for revealing pollution flashover mechanism.

• 한국재료학회지
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• 제22권7호
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• pp.374-378
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• 2012

In an effort to overcome the problems which arise when fabricating high-aspect-ratio TSV(through silicon via), we performed experiments involving the void-free Cu filling of a TSV(10~20 ${\mu}m$ in diameter with an aspect ratio of 5~7) by controlling the plating DC current density and the additive SPS concentration. Initially, the copper deposit growth mode in and around the trench and the TSV was estimated by the change in the plating DC current density. According to the variation of the plating current density, the deposition rate during Cu electroplating differed at the top and the bottom of the trench. Specifically, at a current density 2.5 mA/$cm^2$, the deposition rate in the corner of the trench was lower than that at the top and on the bottom sides. From this result, we confirmed that a plating current density 2.5 mA/$cm^2$ is very useful for void-free Cu filling of a TSV. In order to reduce the plating time, we attempted TSV Cu filling by controlling the accelerator SPS concentration at a plating current density of 2.5 mA/$cm^2$. A TSV with a diameter 10 ${\mu}m$ and an aspect ratio of 7 was filled completely with Cu plating material in 90 min at a current density 2.5 mA/$cm^2$ with an addition of SPS at 50 mg/L. Finally, we found that TSV can be filled rapidly with plated Cu without voids by controlling the SPS concentration at the optimized plating current density.

• 한국농공학회:학술대회논문집
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• 한국농공학회 1999년도 Proceedings of the 1999 Annual Conference The Korean Society of Agricutural Engineers
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• pp.169-174
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• 1999

The reclamation area of Saemangeum (Kunsan) located between 126$^{\circ}$10' -126$^{\circ}$50'E and and 35$^{\circ}$35'N -36$^{\circ}$05'N at the western coast of Korea. The construction of the 33km sea dike is building in the Saemangeum area. When the construction of the sea dike in the coastal region takes plase, there exists a certain amount of soil which is diffused by the tidal current. Behavior of the soil diffusion usually depends on its intrinsic characteristics, bathymetry, construction method and used mchinery. The amount of soil at the construction acts as a pollutant which is the cause of changing the marine environment. When the soil material is diffused , it may form a layer which obstructs the light passing into the sea and causes the extinction or alteration of the living beings on the sea bottom. The settlement of soil material could change the sea bottom deposit. The purpose of MITIGATION is to harmonize the development and the conservation of environment, to restrict environmental destruction and to reproduce the enviroment damaged by the construction in the coastal region. The purpose of this study is to find the method by which we minimize the anti-function of development in the coastal region. Tide and tidal current are calculated using a two-dimensional numerical model before the construction of sea dike in Saemangeum Bay. The numerical results are compared well with field observations. On the basis of these results, we caculated the tide and tidal current after the construction of the sea dike in order to investigate the change of the tide and tidal current after the construction of the sea dike. Moreover, we calculated the tide and tidal current after the construction of submerged breakwater in order to preserve the enviornmental condition of creature habitat . We compared the tide and tidal current before and after the construction of submerbed breakwater, to investigate the possbility of MITIGATION in the fisheries.

• 한국지구과학회지
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• 제23권3호
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• pp.259-269
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• 2002

북서태평양과 동해에서 채취된 4개의 코어는 퇴적구조, 생물교란정도와 내부침식면을 기준으로 과거 1만년 부근에서 상부와 하부로 구분된다. 특히, 시코쿠분지의 코어 KT94-10 상부퇴적물은 낮은 퇴적율, 높은 생물교란작용, 내부침식면, 사엽층리 등으로 특징지워지는데, 이러한 퇴적특징의 조합은 저탁류퇴적층이나 반원양성 퇴적물과는 다른 저층류퇴적물로 해석된다. 그러나 하부는 저층류의 영향을 받은 퇴적층이 관찰되지 않고, 생흔화석만 관찰되는 무구조 니질층의 특징을 보인다. 한편 동해 코어(95PC3)에서는 어떠한 저층류 관련 퇴적물도 관찰되지 않는다. 상부는 생물교란 니질층으로, 하부는 엽층리 니질층으로 구성되어 있으며 환원적 환경을 표시하는 황철석을 포함하고 있다. 결과적으로 북서태평양과 동해 코어의 퇴적특징은 심층류순환이 10,000년 전부터 빨라졌음을 표시하고 있다. 또 같은 시기일지라도, 심층수순환은 동해보다 북서태평양이 더 활발함을 보여주고 있다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1119-1122
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• 2005

A selective deposition of Co thin films for thin film transistor gate electrode has been carried out by the growth with combination of micro-contact printing and metal organic chemical vapor deposition (MOCVD). This results in the elimination of optical lithography process. MOCVD has been employed to selectively deposit Co films on preformed OTS gate pattern by using micro-contact printing (${\mu}CP$). A hydrogenated amorphous silicon TFT with a Co gate selectively formed on SAMs patterned structure exhibited a subthreshold slope of 0.88V/dec, and mobility of $0.35cm^2/V-s$, on/off current ratio of $10^6$, and a threshold voltage of 2.5V, and thus demonstrating the successful application of the novel bottom-up approach into the fabrication of a-Si:H TFTs.

• 방사성폐기물학회지
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• 제17권2호
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• pp.127-137
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• 2019

삼불화알루미늄($AlF_3$)이 포함된 염화물-불화물 혼합 용융염에서 ZIRLO 튜브를 이용한 지르코늄 전해정련공정을 실증하였다. 순환 전압전류실험 결과, $AlF_3$의 농도가 증가함에 따라 금속환원의 개시 전위가 일정하게 증가하고 지르코늄-알루미늄 합금형성과 관련된 추가적인 peak의 크기가 점차 증가하는 것으로 나타났다. 전류조절 전착법과 달리, -1.2 V의 일정전위에서 수행한 지르코늄 전해정련에서 방사형 판 구조의 지르코늄 성장이 염의 상단 표면에서 확연하게 나타났으며, 전착물 지름의 크기는 $AlF_3$의 농도에 따라 점차 증가하는 것으로 나타났다. 주사전자현미경(SEM)과 에너지 분산 X선 분광기(EDX)와 X선 광전자 분광기(XPS)를 이용하여 판 구조의 지르코늄 전착물을 분석한 결과, 극미량의 알루미늄이 지르코늄-알루미늄 합금 형태로 존재하며, 전착물의 상단과 하단 간에 서로 다른 화학성분구조를 갖는 것으로 나타났다. $AlF_3$의 첨가는 전착물 내 잔류염 양을 줄이고, 지르코늄 회수를 위한 전류효율을 향상시키는 데 효과적인 것으로 나타났다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.570-573
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• 2002

Pb(Zr0.52Ti0.48)O3 (PZT) thin films were deposited on the Pt/Ti bottom electrode by rf magnetron sputtering method from target containing 5%, 25% and 50% Pb excess for applying ferroelectric random access memory (FRAM). PZT films were deposited at $300^{\circ}C$ and then they were crystallized by rapid thermal annealing (RTA) at $700^{\circ}C$. After RTA treatment, our results showed that all PZT films indicated perovskite polycrystalline structure with preferred orientation (110) and no pyrochlore phase was observed by X-ray diffraction (XRD) and by Scanning electron microscopy (SEM). A well-fabricated PZT film of excess Pb 25% capacitor showed a leakage current density in the order of $2.63{\times}10^{-7}A/cm^2$ at 100kV/cm, a remanent polarization of $3.385{\mu}C/cm^2$ and a coercive field of 41.32 kV/cm. The results showed that Pb excess of target affects to electrical properties of PZT thin film.

• 한국전기전자재료학회논문지
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• 제16권6호
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• pp.471-476
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• 2003

Au/oxide/n-InP Schottky diodes were fabricated from heteroepitaxial InP layers grown on GaAs substrates by the metalorganic vapor phase epitaxy (MOVPE) method from a new combination of source materials: ethyldimethylindium (EDMIn) and tertiarybutylphosphine (TBP). Anodic oxidation technique by using a solution of 10 g of ammonium pentaborate in 100 cc of ethylene glycole as the electrolyte was used to deposit a thin oxide layer. The barrier heights determined from three different techniques, current-voltage (I-V) measurements at room temperature and in the temperature range of 273 K - 373 K, and room temperature capacitance-voltage (C-V) measurements are in good agreement, 0.7 - 0.9 eV which is considerably high as compared to the 0.45 - 0.55 eV in Au/n-InP Schottky diode without a Passivation layer. The ideality factors of 1.1 - 1.3 of the Schottky diodes were also determined from the I-Y characteristics. Deep level transient spectroscopy (DLTS) studies revealed only one shallow electron state at 92.6 meV below the bottom of the conduction band and no deep state in the heteroepitaxial InP layers grown from EDMIn and TBP.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.207.2-207.2
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• 2013

Oxide-based thin film transistors have been attempted as powerful candidates for driving circuits for active-matrix organic light-emitting diodes and transparent electronics. The oxide TFTs are based on the amorphous multi-component oxides involving zinc, indium, and/or tin elements as main cation sources. The current work employed RF sputtering in order to deposit zinc-tin oxide thin films applicable to transparent oxide thin film transistors. The deposited thin film was characterized and probed in terms of materials and devices. The physical/chemical characterizations were performed using X-ray diffraction, Atomic Force Microscopy, Spectroscopic Ellipsometry, and X-ray Photoelectron Spectroscopy. The thin film transistors were fabricated using a bottom-gated structure where thermally-grown silicon oxide layers were applied as gate-dielectric materials. The inherent properties of oxide thin films are combined with the corresponding device performances with the aim to fabricating the multi-component oxide thin films being optimized towards transparent electronics.