• Korean Journal of Materials Research
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• v.31 no.12
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• pp.727-731
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• 2021

In this study, we have investigated a selective emitter using a UV laser on BBr₃ diffusion doping layer. The selective emitter has two regions of high and low doping concentration alternatively and this structure can remove the disadvantages of homogeneous emitter doping. The selective emitters were fabricated by using UV laser of 355 nm on the homogeneous emitters which were formed on n-type Si by BBr₃ diffusion in the furnace and the heavy boron doping regions were formed on the laser regions. In the optimized laser doping process, we are able to achieve a highly concentrated emitter with a surface resistance of up to 43 Ω/□ from 105 ± 6 Ω/□ borosilicate glass (BSG) layer on Si. In order to compare the characteristics and confirm the passivation effect, the annealing is performed after Al₂O₃ deposition using an ALD. After the annealing, the selective emitter shows a better effect than the high concentration doped emitter and a level equivalent to that of the low concentration doped emitter.

• Korean Journal of Optics and Photonics
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• v.5 no.4
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• pp.499-504
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• 1994

Ti-doped BSG (borosilicate glass) soot films on the silicone substrate have been deposited in the mixture of $SiCl_{4}$, TMB, $TiCL_{4}$ by flame hydrolysis deposition technique. The soot films are melted to form integrated fine glass films. We can fabricate thick films of serveral $10{\mu}m$ with deposition rate,more than $0.5{\mu}m$/min. Refractive index difference of BSG films are increased to more than 0.3% as function of the amount of Ti dopant. As a result of the process an optical waveguide which is simmilar with dimmension and refractive difference of optical fiber is produced. $BCl_{3}$ is widely used for B dopant, but we abtained the good results by the use of TMB in place of $BCl_{3}$. The melting point of silica soot glass is reduced to $1200^{\circ}C$ increasing B dopant. From FTIR analysis $B_2O_3$ content up to about lOmol% in BSG films. films.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1791-1793
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• 2000

본 연구에서는 다결정 실리콘 박막 트랜지스터(poly-Si TFTs)에서의 소오스 및 드레인 영역 형성을 위해 PSG (phosphosilicate glass)와 BSG (borosilicate glass) 박막을 도핑 물질(dopant)로 하여 저온에서 엑시머 레이저(eximer laser)로 활성화하는 공정을 제안한다. 이 실험을 통해 소스 가스인 $PH_3$와 $SiH_4$의 유량비, 레이저 에너지 밀도와 레이저 조사 횟수를 변화시키면서 면저항(sheet resistance)과 불순물의 확산 깊이(diffusion depth)를 성공적으로 조절하였다. 불순물의 확산 깊이와 표면 농도는 레이저 에너지 밀도와 조사 횟수를 증가시킴에 따라 증가하였으며 그 결과 최소 면저항 값은 인(P)의 경우 450$\Omega/\square$을 얻었고 붕소(B)의 경우 1100$\Omega/\square$을 얻었다. 이러한 실험결과는 제안된 방법을 통해 poly-Si TFTs 에서 소오스, 드레인 영역의 도핑 공정을 수행할 수 있음을 보여준다.

• Journal of the Microelectronics and Packaging Society
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• v.8 no.3
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• pp.31-36
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• 2001

Dielectric material which is suitably designed for the application of the high-temperature electrostatic chucks(HTESCS) has been developed. Electrical resistivities and dielectric constants of the dielectric layer satisfy the demands for the proper operation of HTESC, and coefficient of thermal expansion(CTE) of the dielectric material matches well that of the bottom insulator so that it secures stable structure. In order to minimize particle contaminations, borosilicate glass(BSG) is selected as a bonding layer between dielectric layer and bottom insulator, and silver is used as a electrode. BSG is solidly bonded between upper dielectric and bottom insulator, and no diffusions or reactions are observed among silver electrode, dielectric, and glass layers. The chucking characteristics of the fabricated HTESC are found to be superior to those of the commercialized one.