• 한국전기전자재료학회논문지
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• 제15권3호
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• pp.233-237
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• 2002

A giga-bit DRAM(dynamic random access memory) technology with W/WNx/poly-Si dual gate electrode is presented in 7his papers. We fabricated $0.16\mu\textrm{m}$ CMOS using this technology and succeeded in suppressing short-channel effects. The saturation current of nMOS and surface-channel pMOS(SC-pMOS) with a $0.16\mu\textrm{m}$ gate was observed 330 $\mu\A/\mu\textrm{m}$ and 100 $\mu\A/\mu\textrm{m}$ respectively. The lower salutation current of SC-pMOS is due to the p-doped poly gate depletion. SC-pMOS shows good DIBL(dram-induced harrier lowering) and sub-threshold characteristics, and there was no boron penetration.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 하계종합학술대회논문집
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• pp.323-326
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• 1998

본 연구는 boron-doped 실리콘 기판에 heavy 인온인 비소를 먼저 이온 주입시키고 비소의 주입에 의해 실리콘 표면이 손상된 영역에 다시 인을 이온 주입시켰을때, 인의 확산을 관찰하기 위해 microtec 시뮬레이터를 통해 모의공정실험을 실행하였다. 손상된 비정질의 실리콘 기판에서 열처리 전과 inet(N/sub 2/) 분위기에서 인은 느리게 확산을 하였다. 그렇지만 dry와 wt oxidation 열처리 분위기에서는 의의 확산 속도가 증가됨 (OED:oxidation-enhanced idfusion)을 관찰되었다. 실리콘 기판에서 인의 확산을 관찰하기 위해 ICECREM 시뮬레이터를 사용하여 앞의 경우와 동일하게 먼저 비소를 주입하여 실리콘 표면에 손상을 입히고 그 다음 공정에서 인을 주입하였을 때, 열처리 전과 inet, dry 산화분위기에서는 비정질의 실리콘 기판에 이온 주입한 경우와 동일하게 의의 확산 속도가 증가하였지만, wet 산화분위기에서는 오히려 dry 산화분위기에서 보다 확산이 늦어짐이 관찰되었다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.264-267
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• 2008

Through-doping conditions with higher energies and doses were intentionally chosen to understand reverse annealing behavior. We observed that the implantation condition plays a critical role on dopant activation. We found a certain implantation condition with which the sheet resistance is not changed at all upon activation annealing.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 추계학술대회 논문집 학회본부
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• pp.593-595
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• 1995

X-Ray Diffraction method that gives direct information about the deformation of crystal lattice is used for the determination of profiles of the residual stress along the depth of heavily boron doped silicon. The residual stress distribution is obtained by XRD method as measuring the deformation of the front surface of the $p^+$ silicon layer fabricated through different etch time. It is determined that the compressive residual stress exists in the most region except the font surface.

• 대한전자공학회논문지
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• 제25권9호
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• pp.1060-1067
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• 1988

In this paper, we have investigated the effects of rapid thermal process on the electrical and structural properties of silicon films. It was shown that required times and temperature for the successful activation of dopants (Boron, Phosphorus:5E15atoms/cm\ulcorner were above 1000\ulcorner, 10sec, respectively. The typical resistivities of films deposited below 600\ulcorner were in the range of 1.0 E-3ohm-cm which was 20-30% lower than that of initially polycrystalline silicon depositd above 600\ulcorner. After rapid thermal process at high temperature above 1000\ulcorner, the films did not reveal any change in resistivity due to the dopant segregation, and better electrical conductivity could be obtained by increasing the process time. The grain growth by RTA treatment was more salient in the case of the doped amorphous than that of initially polycrystalline. The surface of the films also preserved the higher structural perfection and surface smoothness.

• 한국결정학회:학술대회논문집
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• 한국결정학회 2003년도 춘계학술연구발표회
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• pp.6-6
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• 2003

Highly crystalline 5H-polytypic form of sp3-bonded boron nitride (BN) was grown by pulsed-laser-vaporization of BN, where synchronous reactive-plasma packets assisted the crystal growth in the vapor phase. The structure of the product crystallites (˙5 micrometers) was confirmed by using transmission electron diffraction and electron energy loss spectroscopy. This material proved to have a sharp and dominant band at 225 nm by cathode luminescence at room temperatures and corresponding monochromatic images revealed that they uniformly emitted the ultraviolet light. Considering that cubic BN has already been doped as p- and n- type semiconductors, this material may be applied to the light-emitting devices working at almost the deepest limit of the UV region that is functional without vacuum.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 하계학술대회 논문집 C
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• pp.1226-1228
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• 1994

Applications of poly-Si layers which are important as sensing and structural material of various sensors were reviewed in this research. A piezoresistive pressure sensor with piezoresistors has sensitivity of $6.93{\mu}$ V/(VmmHg) within 300mmHg. Temperature sensor was studied with measurement range of $-40{\sim}140^{\circ}C$ and $400{\sim}800^{\circ}C$ using boron-doped and undoped poly-Si resistors, respectively. Poly-Si layer was used to transduce volume change of polyimide to stress of silicon diaphragm for humidity sensor.

• 전자공학회논문지A
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• 제32A권7호
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• pp.69-76
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• 1995

A new device structure has been developed for p-i-n switches. In this structure, the phosphorus-diffused n$^{+}$ layter adjacent to the boron-doped anode is used to short the p$^{+}$ anode-channel(i-region). This change in the anode electrode structure results in a significant improvement in the threshold voltage-to-holding voltage($V_{Th}/V_{h}$) ratio, which is due to the suppression of the hold injection from the anode by the n$^{+}$ layer. The shorted anode p-i-n devices of a 100 .mu.m channel length show an extremely high threshold voltage in the 250~300 V range and a low holding voltage in the 5~9 V range. These features of the device are expected to acdelerate their practical application to power switching circuits.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1992년도 춘계학술대회 논문집
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• pp.86-90
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• 1992

We have studied the characteristics of n-and p-channel FETs with submicron channel length fabricated by twin-well process. Threshold voltage variation and potential distribution with channel ion implantation conditions and impurity profile of n-and p-channel region wee simulated using SUPREM-II and MINIMOS 4.0 simulater, P-channel FET had buried-channel in the depth of 0.15 $\mu\textrm{m}$ from surface by counter-doped boron ion implantation for threshold voltage adjustment. As a result of device measurement, we have obtained good drain saturation characteristics for 3.3 [V] opreation, minimized short channel effect with threshold voltage shift below 0.2[V], high punchthrough and breakdown voltage above 10[V] and low subthreshold value.

• 공업화학
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• 제21권1호
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• pp.29-33
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• 2010

본 연구에서는 여러 가지 열처리 온도에서 다성분 도핑에 의한 광촉매의 밴드갭 저감 및 가시광 광분해 효과를 알아보고자 tetraethylammonium tetrafluoroborate (TEATFB)로 B, C, N, F 등이 동시에 도핑된 $TiO_{2}$ 광촉매를 제조하였다. 도핑된 $TiO_{2}$ 광촉매가 가시광선영역에서 분해되는 정도를 확인하기 위해서 태양광에 조사하여 rhodamine B와 acridine orange로 염료분해 실험을 수행하였다. XRD 결과 $800^{\circ}C$ 이하에서 열처리된 $TiO_{2}$ 광촉매는 anatase 구조가 존재하고 있음을 알 수 있었다. XPS 분석을 통하여 광활성에 영향을 미치는 B, C, N, F의 결합구조를 확인하였고 UV-DRS 결과로부터 다성분 도핑된 $TiO_{2}$ 광촉매의 밴드 갭이 2.98 eV로 줄어든 것을 알 수 있었다. 다성분 도핑 $TiO_{2}$의 태양광 조사에 의한 UV-Vis 결과에서 acridine orange에 대한 광분해 효과가 도핑되지 않은 샘플에 비해 1.61배 증가함을 알 수 있었다. 특히, 다성분이 동시 도핑되고 $700^{\circ}C$에서 열처리된 샘플이 acridine orange과 rhodamine B 두 가지 염료 모두에서 가장 좋은 광분해 효과를 보여 주었다.