• Journal of Korean Society on Water Environment
• /
• v.36 no.1
• /
• pp.48-54
• /
• 2020

This paper presents a screening protocol for the selection of solvents available for the solvent extraction desalination process. The desalination solvents hypothetically and theoretically require the capability of (1) Forming hydrogen bonds with water, (2) Absorbing some water molecules into its non-polar solvent layer, (3) Changing solubility for water-solvent separation, and (4) Rejecting salt ions during absorption. Similar to carboxylic acids, amine solvents are solvent chemicals applicable for desalination. The key parameter for selecting the potential solvent was the octanol-water partitioning coefficient (Kow) of which preferable value for desalination was in the range of 1-3. Six of the 30 amine solvents can absorb water and have a variable, i.e., temperature swing solubility with water molecule for water-solvent separation. Also, the hydrogen bonding interaction between solvent and water must be stronger than the ion-dipole interaction between water and salt, which means that the salt ions must be broken from the water and only water molecules absorbed for the desalination. In the final step, three solvents were selected as desalination solvents to remove salt ions and recover water. The water recovery of these three solvents were 15.4 %, 2.8 %, 10.5 %, and salt rejection were 76 %, 98 %, 95 %, respectively. This study suggests a new screening protocol comprising the theoretical and experimental approaches for the selection of solvents for the desalination method which is a new and challenges the desalination process in the future.

• Journal of the Korean Vacuum Society
• /
• v.8 no.1
• /
• pp.20-25
• /
• 1999

The effect of different plasma surface preparation and oxidation processes for the formation of $SiO_2-Si$(100) interfaces was studied using angle resolved uv-photoelectron spectroscopy. The surface preparation processes included ex situ preclean as well as in situ hydrogen plasma, which were compared to the processes of UHV annealing at high temperature. The spectral position of the oxide valence band features, with respect to the Fermi level. Were found to shift according to the different processes of surface preparation and oxidation. The shifts were analyzed in terms of band bending in the Si. Origins of the spectral shifts were considered to include defects at the $SiO_2Si$ interfaces and surface morphology(roughness) dependent on the surface preparation processes. From comparison of the ARUPS results of the various processes, it was concluded that the interface bonding of the silicon oxide-showed the lowest band bending.

• Journal of Powder Materials
• /
• v.21 no.3
• /
• pp.207-214
• /
• 2014

In this study, nano-scale copper powders were reduction treated in a hydrogen atmosphere at the relatively high temperature of $350^{\circ}C$ in order to eliminate surface oxide layers, which are the main obstacles for fabricating a nano/ultrafine grained bulk parts from the nano-scale powders. The changes in composition and microstructure before and after the hydrogen reduction treatment were evaluated by analyzing X-ray diffraction (XRD) line profile patterns using the convolutional multiple whole profile (CMWP) procedure. In order to confirm the result from the XRD line profile analysis, transmitted electron microscope observations were performed on the specimen of the hydrogen reduction treated powders fabricated using a focused ion beam process. A quasi-statically compacted specimen from the nano-scale powders was produced and Vickers micro-hardness was measured to verify the potential of the powders as the basis for a bulk nano/ultrafine grained material. Although the bonding between particles and the growth in size of the particles occurred, crystallites retained their nano-scale size evaluated using the XRD results. The hardness results demonstrate the usefulness of the powders for a nano/ultrafine grained material, once a good consolidation of powders is achieved.

• Journal of Sensor Science and Technology
• /
• v.11 no.1
• /
• pp.54-59
• /
• 2002

This paper describes a new process technique for batch process of SOI(Si-on-Insulator) structures with buried cavities for MEMS(Micro Electro Mechanical System) applications by SDB(Si-wafer Direct Bonding) technology and electrochemical etch-stop. A low-cost electrochemical etch-stop method is used to control accurately the thickness of SOI. The cavities were made on the upper handling wafer by Si anisotropic etching. Two wafers are bonded with an intermediate insulating oxide layer. After high-temperature annealing($1000^{\circ}C$, 60 min), the SDB SOI structure with buried cavities was thinned by electrochemical etch-stop. The surface of the fabricated SDB SOI structure have more roughness that of lapping and polishing by mechanical method. This SDB SOI structure with buried cavities will provide a powerful and versatile substrate for novel microsensors arid microactuators.

• Journal of Surface Science and Engineering
• /
• v.36 no.5
• /
• pp.373-378
• /
• 2003

With increasing environmental concerns, application of lead-free solder and fluxless soldering process have been taken attention from the electronic packaging industry. Plasma treatment is one of the soldering methods for the fluxless soldering, and it can prevent environmental pollution cased by flux. On this study fluxless soldering process under $Ar-H_2$plasma using lead free solders such as Sn-3.5 wt%Ag, Sn-3.5 wt%Ag-0.7 wt%Cu and Sn-37%Pb for a reference was investigated. As the plasma reflow has higher soldering temperature than normal air reflow, the effects of UBM(Under Bump Metallization) thickness on the interfacial reaction and bonding strength can be critical. Experimental results showed in case of the thin UBM, Au(20 nm)/Cu(0.3 $\mu\textrm{m}$)/Ni(0.4 $\mu\textrm{m}$)/Al(0.4 $\mu\textrm{m}$), shear strength of the soldered joint was relatively low as 19-27㎫, and it's caused by the crack observed along the bonded interface. The crack was believed to be produced by the exhaustion of the thin UBM-layer due to the excessive reaction with solder under plasma. However, in case of thick UBM, Au(20 nm)/Cu(4 $\mu\textrm{m}$)/Ni(4 $\mu\textrm{m}$)/Al(0.4 $\mu\textrm{m}$), the bonded interface was sound without any crack and shear strength gives 32∼42㎫. Thus, by increasing UBM thickness in this study the shear strength can be improved to 50∼70%. Fluxed reflow soldering under hot air was also carried out for a reference, and the shear strength was 48∼52㎫. Consequently the fluxless soldering with plasma showed around 65∼80% as those of fluxed air reflow, and the possibility of the $Ar-H_2$ plasma reflow was evaluated.

• The Journal of Advanced Prosthodontics
• /
• v.4 no.3
• /
• pp.139-145
• /
• 2012

PURPOSE. To evaluate the shear bond strength of resin luting agent to dentin surfaces cleansed with different agents like pumice, ultrasonic scaler with chlorhexidine gluconate, EDTA and the influence of these cleansing methods on wetting properties of the dentin by Axisymmetric drop Shape Analysis - Contact Diameter technique (ADSA-CD). MATERIALS AND METHODS. Forty coronal portions of human third molar were prepared until dentin was exposed. Specimens were divided into two groups: Group A and Group B. Provisional restorations made with autopolymerizing resin were luted to dentin surface with zinc oxide eugenol in Group A and with freegenol cement in Group B. All specimens were stored in distilled water at room temperature for 24 hrs and provisional cements were mechanically removed with explorer and rinsed with water and cleansed using various methods (Control-air-water spray, Pumice prophylaxis, Ultrasonic scaler with 0.2% Chlorhexidine gluconate, 17% EDTA). Contact angle measurements were performed to assess wettability of various cleansing agents using the ADSA-CD technique. Bond strength of a resin luting agent bonded to the cleansed surface was assessed using Instron testing machine and the mode of failure noted. SEM was done to assess the surface cleanliness. Data were statistically analyzed by one-way analysis of variance with Tukey HSD tests (${\alpha}$=.05). RESULTS. Specimens treated with EDTA showed the highest shear bond strength and the lowest contact angle for both groups. SEM showed that EDTA was the most effective solution to remove the smear layer. Also, mode of failure seen was predominantly cohesive for both EDTA and pumice prophylaxis. CONCLUSION. EDTA was the most effective dentin cleansing agent among the compared groups.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.28 no.1
• /
• pp.28-33
• /
• 2015

The needle electrode is inserted into the cross-linked polyethylene(XLPE) which is the ultra high voltage cable for electric power. By changing the tilt of the needle electrode, we investigated how the void and the thickness of the insulating layer influence the partial discharge(PD) characteristics and the insulating breakdown. In order to investigate the PD characteristics, The XLPE cable was used to the specimens and the tungsten electrode was used with the needle electrode. And the inner semi-conductive layer material of XLPE cable was used with the negative electrode by bonding with the use of conduction tape. The size of the specimens was manufactured to be $16{\times}40{\times}30[mm^3]$. We confirmed the effect on changing the PD characteristics according to the changing voltage and the tilt of the electrode after applying the voltage on the electrode from 1[kV] to 40[kV] at room temperature. In the PD characteristics, it was confirmed that the PD current of air void specimens with tilt was unstable more than that of no void specimens with tilt. It was also confirmed that the breakdown voltage was decreased because the effect of air void is more active than the change of the needle electrode tilt in the specimen with air void inside the insulation.

• Clean Technology
• /
• v.21 no.4
• /
• pp.235-240
• /
• 2015

In this study, vanadium dioxide was doped with titanium (0~0.5 at %) to improve thermochromic properties. The titanium doped vanadium dioxide (Ti-VO₂) particles were prepared via thermolysis process using vanadyl sulfate, ammonium bicarbonate and titianium chloride as precursors. The crystal structure, morphology, chemical bonding and thermochromic properties were investigated by using XRD, FE-SEM, XPS, DSC and UV-Vis-NIR spectroscopy. It was found that titanium was successfully doped into the crystal lattice of VO₂ and the obtained Ti-VO₂ particles have monoclinic structure. With increasing Ti concentration, the particle size and phase transition temperature of Ti-VO₂ particles decreased and NIR switching efficiency increased.

• Polymer(Korea)
• /
• v.27 no.6
• /
• pp.555-561
• /
• 2003

The self-assembled monolayer coating of octadecyltrichlorosilane (OTS) on the silicon based MEMS was investigated and surface characteristics were considered as a function of coating conditions and reagent composition. The sulfuric peroxide mixture (SPM) solution was used to form -OH group which caused the hydrophilic characteristic on silicon surftce. Highest hydrophilicity was obtained by SPM solution with 85% acid content at room temperature. OTS was applied on the silicon surface by means of self-assembled monolayers (SAMs) coating. It was found that sol-gel reaction was took place between -OH group on the silicon surface and -Cl group in OTS. As a result, the contact angle increased due to the increase of hydrophobicity by Si-O bonding of SAMs. Sol-gel reaction could be controlled by coating conditions as well as reagent composition in OTS coating solution.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.186-186
• /
• 2013

Nitrogen doped Ge-Sb-Te (N-GST) thin films for phase change random access memory (PRAM) applications were investigated by synchrotron-radiation-based x-ray photoelectron spectroscopy and absorption spectroscopy. Nitrogen doping in GST resulted in more favorable N atoms' bonding with Ge atoms rather than with Sb and Te atoms [1,2], which explains the higher phase change transition temperature than that of undoped Ge-Sb-Te thin film. Surprisingly, it was noticed that N atoms also existed in the form of molecular nitrogen, $N_2$, which is detrimental to the stability of the GST performance [3]. N-doped GST experimental features were also supported by ab-initio molecular dynamic calculations [2]. References [1] M.-C. Jung, Y. M. Lee, H.-D. Kim, M. G. Kim, and H. J. Shin, K. H. Kim, S. A. Song, H. S. Jeong, C. H. Ko, and M. Han, "Ge nitride formation in N-doped amorphous Ge2Sb2Te5", Appl. Phys. Lett. 91, 083514 (2007). [2] Zhimei Sun, Jian Zhou, Hyun-Joon Shin, Andreas Blomqvist, and Rajeev Ahuja, "Stable nitride complex and molecular nitrogen in N doped amorphous Ge2Sb2Te5", Appl. Phys. Lett. 93, 241908 (2008). [3] Kihong Kim, Ju-Chul Park, Jae-Gwan Chung, and Se Ahn Song, Min-Cherl Jung, Young Mi Lee, Hyun-Joon Shin, Bongjin Kuh, Yongho Ha, Jin-Seo Noh, "Observation of molecular nitrogen in N-doped Ge2Sb2Te5", Appl. Phys. Lett. 89, 243520 (2006).