• Transactions of the Korean Society of Mechanical Engineers A
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• v.36 no.4
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• pp.395-403
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• 2012

This is direct bonding many of the metal bumps between FPCB and HPCB substrate. By using an ultrasonic horn mounted on an ultrasonic bonding machine, it is possible to bond gold pads onto the FPCB and HPCB at room temperature without an adhesive like ACA or NCA and high heat and solder. This ultrasonic bonding technology minimizes damage to the material. The process conditions evaluated for obtaining a greater bonding strength than 0.6 kgf, which is commercially required, were 40 kHz of frequency; 0.6MPa of bonding pressure; and 0.5, 1.0, 1.5, and 2.0 s of bonding time. The peel off test was performed for evaluating bonding strength, which was found to be more than 0.80 kgf.

• Journal of the Korean Society of Safety
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• v.18 no.2
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• pp.79-85
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• 2003

In this study, the behavior characteristics of specimen strengthened with CFRP plate were analyzed according to the change of temperature. CFRP plate itself has a good resistance at the high temperature, but epoxy used as a adhesive is lost its bonding strength at the relatively low temperature. Therefore, this study carries out experiment on the beams slot-bonded with CFRP plates in order to maintain the successful bonding strength of epoxy at high temperature. It is presented that the range of glass transition temperature is 60-8$0^{\circ}C$ and RC beams slot-bonded with CFRP plate shows more increasing resistance and failure load than that of interface bonded at the high temperature.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2002.10a
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• pp.1033-1036
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• 2002

Wafer bonding methods such as fusion and anodic bonding suffer from high temperature treatment, long processing time, and possible damage to the micro-scale sensor or actuators. In the localized bonding process, beating was conducted locally while the whole wafer is maintained at a relatively low temperature. But previous research of localized heating has some problems, such as non-uniform soldering due to non-uniform heating and micro crack formation on the glass capsule by thermal stress effect. To address this non-uniformity problem, a new heater configuration is being proposed. By keeping several points on the heater strip at calculated and constant potential, more uniform heating, hence more reliable wafer bonding could be achieved. The proposed scheme has been successfully demonstrated, and the result shows that it will be very useful in hermetic packaging. Less than 0.2 ㎫ contact Pressure were used for bonding with 150 ㎃ current input for 50${\mu}{\textrm}{m}$ width, 2${\mu}{\textrm}{m}$ height and 8mm $\times$ 8mm, 5mm$\times$5mm, 3mm $\times$ 3mm sized phosphorus-doped poly-silicon micro heater. The temperature can be raised at the bonding region to 80$0^{\circ}C$, and it was enough to achieve a strong and reliable bonding in 3minutes. The IR camera test results show improved uniformity in heat distribution compared with conventional micro heaters. For gross leak check, IPA (Isopropanol Alcohol) was used. Since IPA has better wetability than water, it can easily penetrate small openings, and is more suitable for gross leak check. The pass ratio of bonded dies was 70%, for conventional localized heating, and 85% for newly developed FP scheme. The bonding strength was more than 30㎫ for FP scheme packaging, which shows that FP scheme can be a good candidate for micro scale hermetic packaging.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.4
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• pp.109-114
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• 2021

We investigated the effects of atmospheric hydrogen plasma treatment on Cu-Cu direct bonding. Hydrogen plasma was effective in reducing the surface oxide layer of Cu thin film, which was confirmed by GIXRD analysis. It was observed that larger plasma input power and longer treatment time were effective in terms of reduction and surface roughness. The interfacial adhesion energy was measured by DCB test and it was observed to decrease as the bonding temperature decreased, resulting in bonding failure at bonding temperature of 200℃. In case of wet treatment, strong Cu-Cu bonding was observed above bonding temperature of 250℃.

• ETRI Journal
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• v.38 no.6
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• pp.1163-1171
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• 2016

Integration technologies involving flexible substrates are receiving significant attention owing the appearance of new products regarding wearable and Internet of Things technologies. There has been a continuous demand from the industry for a reliable bonding method applicable to a low-temperature process and flexible substrates. Up to now, however, an anisotropic conductive film (ACF) has been predominantly used in applications involving flexible substrates; we therefore suggest low-temperature lead-free soldering and bonding processes as a possible alternative for flex-on-flex applications. Test vehicles were designed on polyimide flexible substrates (FPCBs) to measure the contact resistances. Solder bumping was carried out using a solder-on-pad process with Solder Bump Maker based on Sn58Bi for low-temperature applications. In addition, thermocompression bonding of FPCBs was successfully demonstrated within the temperature of $150^{\circ}C$ using a newly developed fluxing underfill material with fluxing and curing capabilities at low temperature. The same FPCBs were bonded using commercially available ACFs in order to compare the joint properties with those of a joint formed using solder and an underfill. Both of the interconnections formed with Sn58Bi and ACF were examined through a contact resistance measurement, an $85^{\circ}C$ and 85% reliability test, and an SEM cross-sectional analysis.

• Geomechanics and Engineering
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• v.18 no.2
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• pp.133-140
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• 2019

Strain-rate and temperature have significant effects on the one-dimensional (1D) compression behavior of soils. This paper focuses on the bonding degradation effect of soil structure on the time and temperature dependent behavior of soft structured clay. The strain-rate and temperature dependency of preconsolidation pressure are investigated in double logarithm plane and a thermal viscoplastic model considering the combined effect of strain-rate and temperature is developed to describe the mechanical behavior of unstructured clay. By incorporating the bonding degradation, the model is extended that can be suitable for structured clay. The extended model is used to simulate CRS (Constant Rate of Strain) tests conducted on structural Berthierville clay with different strain-rates and temperatures. The comparisons between predicted and experimental results show that the extended model can reasonably describe the effect of bonding degradation on the stain-rate and temperature dependent behavior of soft structural clay under 1D condition. Although the model is proposed for 1D analysis, it can be a good base for developing a more general 3D model.

• Journal of Powder Materials
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• v.9 no.3
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• pp.189-198
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• 2002

In this work, transient liquid phase (TLP) bonding of Ni-Cr heat resisted cast alloy (HP) was investigated. And also the behaviors of the solid particles distributed in the interlayer during TLP bonding were investigated. The MBF-60 and solid particles (Ni, Fe, and $Al_2O_3$ powders respectively) added MBF-60 which will be a liquid phase coexisting with solid particles at the bonding temperature were used as insert metal. The effective and sound bonding was possible by spark plasma sinter-bonding due to the differences of electric resistance between base metal and liquid insert layer which creates high temperature region. During the isothermal solidification, $Al_2O_3$ particles and solid particles of liquid phase sintered insert metal have shown no growth, while Ni and Fe particles grow rapidly. In this TLP bonding using the MBF-60 and distributed Fe, Ni particles as insert materials, the whole isothermal solidification process was dominated by the growth rate of the solid particles distributed in the interlayer.

• Journal of the Semiconductor & Display Technology
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• v.15 no.1
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• pp.52-55
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• 2016

GZO film was prepared on p-type Si wafer and then annealed at various temperatures in an air conditions to research the bonding structures in accordance with the annealing processes. GZO film annealed in an atmosphere showed the various bonding structure depending on annealing temperatures and oxygen gas flow rate during the deposition. The difference of bonding structures of GZO films made by oxygen gas flows between 18 sccm and 22 sccm was so great. The bonding structures of GZO films made by oxygen gas flow of 18 sccm were showed the crystal structure, but that of 22 sccm were showed the amorphous structure in spite of after annealing processes. The bonding structure of GZO as oxide-semiconductor was observed the trend of becoming amorphous structures at the temperature of $200^{\circ}C$. Therefore, the characteristics of oxide semiconductor are needed to research the variation near the annealing at $200^{\circ}C$.

• Journal of Welding and Joining
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• v.20 no.6
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• pp.106-106
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• 2002

This study investigated variations of micro-structures and mechanical properties of Ti / STS321L joint with various bonding temperature and time using brazing method. According to increasing bonding temperature and time, it was observed that the thickness of their reaction layer increased due So increasing diffusion rate and time. From the EPMA results, Ti diffused to the STS321L substrate according to increasing bending time to 30min. Hardness of bonded interface increased with increasing bonding temperature and time due to increasing their oxides and intermetallic compounds. XRD data indicated that Ag, Ag-Ti intermetallic compounds, TiAg and Ti₃Ag and titanium oxide, TiO₂were formed in interface. In tensile test, it was found that the tensile strength had a maximum value at the bonding temperature of 900℃ and time of 5min, and tensile strength decreased over bonding time of 5min. The critical thickness of intermetallic compounds was observed to about 30㎛, because of brittleness from their excessive intermetallic compounds and titanium oxide, and weakness from void.

• Journal of Welding and Joining
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• v.20 no.6
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• pp.830-837
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• 2002

This study investigated variations of micro-structures and mechanical properties of Ti / STS321L joint with various bonding temperature and time using brazing method. According to increasing bonding temperature and time, it was observed that the thickness of their reaction layer increased due So increasing diffusion rate and time. From the EPMA results, Ti diffused to the STS321L substrate according to increasing bending time to 30min. Hardness of bonded interface increased with increasing bonding temperature and time due to increasing their oxides and intermetallic compounds. XRD data indicated that Ag, Ag-Ti intermetallic compounds, TiAg and $Ti_3Ag$ and titanium oxide, $TiO_2$ were formed in interface. In tensile test, it was found that the tensile strength had a maximum value at the bonding temperature of $900^{\circ}C$ and time of 5min, and tensile strength decreased over bonding time of 5min. The critical thickness of intermetallic compounds was observed to about $30\mu\textrm{m}$, because of brittleness from their excessive intermetallic compounds and titanium oxide, and weakness from void.