• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.338-338
• /
• 2013

Monolithic three-dimensional integrated circuits (3D-ICs) 구현 시 bonding 과정에서 발생되는 aluminum (Al) 이나 copper (Cu) 등의 interconnect metal의 확산, 열적 스트레스, 결함의 발생, 도펀트 재분포와 같은 문제들을 피하기 위해서는 저온 공정이 필수적이다. 지금까지는 polymer 기반의 bonding이나 Cu/Cu와 같은 metal 기반의 bonding 등과 같은 저온 bonding 방법이 연구되어 왔다. 그러나 이와 같은 bonding 공정들은 공정 시 void와 같은 문제가 발생하거나 공정을 위한 특수한 장비가 필수적이다. 반면, 두 물질의 합금을 이용해 녹는점을 낮추는 eutectic bonding 공정은 저온에서 공정이 가능할 뿐만 아니라 void의 발생 없이 강한 bonding 강도를 얻을 수 있다. Aluminum-germanium (Al-Ge) 및 aluminum-indium (Al-In) 등의 조합이 eutectic bonding에 이용되어 각각 $424^{\circ}C$ 및 $454^{\circ}C$의 저온 공정을 성취하였으나 여전히 $400^{\circ}C$이상의 eutectic 온도로 인해 3D-ICs의 구현 시에는 적용이 불가능하다. 이러한 metal 조합들에 비해 indium (In)과 tin (Sn)은 각각 $156^{\circ}C$ 및 $232^{\circ}C$로 굉장히 낮은 녹는점을 가지고 있기 때문에 In-Sn 조합은 약 $120^{\circ}C$ 정도의 상당히 낮은eutectic 온도를 갖는다. 따라서 본 연구팀은 In-Sn 조합을 이용하여 $200^{\circ}C$ 이하에서monolithic 3D-IC 구현 시 사용될 eutectic bonding 공정을 개발하였다. 100 nm SiO2가 증착된 Si wafer 위에 50 nm Ti 및 410 nm In을 증착하고, 다른Si wafer 위에 50 nm Ti 및 500 nm Sn을 증착하였다. Ti는 adhesion 향상 및 diffusion barrier 역할을 위해 증착되었다. In과 Sn의 두께는 binary phase diagram을 통해 In-Sn의 eutectic 온도인 $120^{\circ}C$ 지점의 조성 비율인 48 at% Sn과 52 at% In에 해당되는 410 nm (In) 그리고 500 nm (Sn)로 결정되었다. Bonding은 Tbon-100 장비를 이용하여 $140^{\circ}C$, $170^{\circ}C$ 그리고 $200^{\circ}C$에서 2,000 N의 압력으로 진행되었으며 각각의 샘플들은 scanning electron microscope (SEM)을 통해 확인된 후, 접합 강도 테스트를 진행하였다. 추가로 bonding 층의 In 및 Sn 분포를 확인하기 위하여 Si wafer 위에 Ti/In/Sn/Ti를 차례로 증착시킨 뒤 bonding 조건과 같은 온도에서 열처리하고secondary ion mass spectrometry (SIMS) profile 분석을 시행하였다. 결론적으로 본 연구를 통하여 충분히 높은 접합 강도를 갖는 In-Sn eutectic bonding 공정을 $140^{\circ}C$의 낮은 공정온도에서 성공적으로 개발하였다.

• Transactions of Materials Processing
• /
• v.22 no.8
• /
• pp.463-469
• /
• 2013

In the previous work, a new forging process design, which included incremental upsetting, diffusion bonding and cogging, was suggested as a method to manufacture 1.9wt%C ultrahigh carbon workrolls. The previous study showed that incremental upsetting and diffusion bonding are effective in closing voids and healing of the closed void. In addition, compression tests of the 1.9wt%C ultrahigh carbon steel revealed that new microvoids form within the blocky cementite at temperatures of less than $900^{\circ}C$ and that local melting can occur at temperatures over $1120^{\circ}C$. Thus, the forging temperature should be controlled between 900 and $1120^{\circ}C$. Based on these results, incremental upsetting and diffusion bonding were used to check whether they are effective in closing and healing voids in a 1.9wt%C ultrahigh carbon steel. The incremental upsetting and diffusion bonding were performed using sub-sized specimens of 1.9wt%C ultrahigh carbon steel. The specimen was deformed only in the radial direction during the incremental upsetting until the reduction ratio reached about 45~50%. After deformation the specimens were kept at $1100^{\circ}C$ for the 1 hour in order to obtain a high bonding strength for the closed void. Finally, microstructural observations and tensile tests were conducted to investigate void closure behavior and bonding strength.

• Proceedings of the KWS Conference
• /
• 1999.10a
• /
• pp.110-112
• /
• 1999

• Proceedings of the International Microelectronics And Packaging Society Conference
• /
• 2003.09a
• /
• pp.43-62
• /
• 2003

• Journal of the Microelectronics and Packaging Society
• /
• v.17 no.2
• /
• pp.55-61
• /
• 2010

The device with tantalum silicide heater were bonded by Ag paste and Au SBB(Stud Bump Bonding) onto the Au coated substrate. The shear test after Au ABB and the thermal performance under current stressing were measured. The optimum condition of Au SBB was determined by fractured surface after die shear test and $350^{\circ}C$ for substrate, $250^{\circ}C$ for die during flip chip bonding with bonding load of about 300 g/bump. With applying 5W through heater on the device, the maximum temperature with Ag paste bonding was about $50^{\circ}C$. That with Au SBB on Au coated Si substrate showed $64^{\circ}C$. The difference of maximum temperatures is only $14^{\circ}C$, even though the difference of contact area between Ag paste bonding and Au SBB is by about 300 times and the simulation showed that the contact resistance might be one of the reasons.

• Journal of the Microelectronics and Packaging Society
• /
• v.23 no.4
• /
• pp.69-77
• /
• 2016

We propose nano-scale Cu direct bonding technology using ultra-high density Cu nano-pillar (CNP) with for high stacking yield exascale 2.5D/3D integration. We clarified the joining mechanism of nano-scale Cu direct bonding using CNP. Nano-scale Cu pillar easily bond with Cu electrode by re-crystallization of CNP due to the solid phase diffusion and by morphology change of CNP to minimize interfacial energy at relatively lower temperature and pressure compared to conventional micro-scale Cu direct bonding. We confirmed for the first time that 4.3 million electrodes per die are successfully connected in series with the joining yield of 100%. The joining resistance of CNP bundle with $80{\mu}m$ height is around 30 m for each pair of $10{\mu}m$ dia. electrode. Capacitance value of CNP bundle with $3{\mu}m$ length and $80{\mu}m$ height is around 0.6fF. Eye-diagram pattern shows no degradation even at 10Gbps data rate after the lamination of anisotropic conductive film.

• Journal of the Microelectronics and Packaging Society
• /
• v.7 no.1
• /
• pp.7-12
• /
• 2000

As an essential technology for the FED, VFD and PDP packaging having merits of no glass frit and no glass tube usage, two sodalime glass substrates were electrostatically-bonded in a vacuum environment, and the bond properties were compared with the case of bonding in atmosphere. The glass wafer pairs bonded in vacuum using a-Si interlayer had a relatively lower bond strength than the ones bonded in atmosphere under same bonding conditions (temperature and voltage). And the bond strength was increased in the case of oxygen ambient. Through the XPS and SIMS analyses fur the surface region of a-silicon and bulk glass, it might be concluded that the lower bonding strength was originated from the inactive silicon oxide growth occurred during the electrostatic bonding process due to oxygen deficiency in vacuum.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.294-294
• /
• 2014

Developing magnetic thin films with desirable physical properties is a key step to promote research in spintronics. Organic-based magnetic material is a relatively new kind of materials which has magnetic properties in a molecular and microscopic level. These materials have been constructed by the coordination between 3d transition metal and organic materials producing long-range magnetic orders with a relatively high transition temperature. However, these materials were mostly synthesized as a form of powder, which is difficult to study for their physical properties as well as apply for electronic/spintronic devices. In this study, we have employed physical vapor deposition (PVD) to develop a new organic-based hybrid magnetic film that is achieved by the coordination of Fe and tetracyanoquinodimethane (TCNQ). The IR spectra of the grown film show modified CN vibration modes in TCNQ, which suggest a strong bonding between Fe and TCNQ. The thin film has both ferromagnetic and semiconducting behaviors, which is suitable for molecular spintronic applications. The high resolution photoemission (HRPES) spectra also show shift of 1s peak point of nitrogen and the carbon 1s peaks display traces of charge transfer from Fe to TCNQ as well as shake-up features, which suggest strong bonding and anti-bonding nature of coordination between Fe and TCNQ.

• Textile Coloration and Finishing
• /
• v.25 no.2
• /
• pp.110-117
• /
• 2013

The purpose of this study is to fabricate the flame retardant polyester fabric by thermal bonding with low melting component of flame retardant bicomponent filament(LMFRPC) and to describe the characteristics of thermal bonded fabrics. The fabrics were prepared with flame retardant polyester filaments(FRP) as warp and blended filaments of FRP and LMFRPC as weft. The LMFRPC have a sheath and a core wherein the core comprises a flame retardant polyester and the sheath comprises a thermoplastic polyester of low-melting point. In this study, we investigated the physical properties, melting behavior of filament, the effect of the component of FRP and LMFRPC on the thermal bonding, mechanical properties. Melting peak of LMFRPC showed the double melting peak. The thermal bonding of the fabric formed at lower melting peak temperature of bicomponent filament of LMFRPC. The optimum thermal bonding conditions for fabrics was applied at about $170^{\circ}C$ for 60 seconds by pin tenter. On the other hand, the tensile strength, elongation, and LOI of the fabric increased with an increasing component of FRP of weft.

• Journal of Korea Foundry Society
• /
• v.19 no.5
• /
• pp.410-418
• /
• 1999

To overcome the undesirable deformation, peeling off and geometrical restrictions which were mainly caused by differences in thermal expansion coefficients during the cladding of aluminum strip and stainless strip, new processing method based on vacuum die casting is designed and implemented in fabricating Fe-17wt%Cr steel (stainless steel). To increase cast-bonding ability, the surface of Fe-17wt%Cr steel is electrochemical etched to have optimum pit size (above 0.2 mm) and pit density (above 30%). The implementation of vacuum die casting by using surface treated stainless steel (Fe-17wt%Cr Steel) produces good trial products having acceptable cast-bonding ability. The enabling conditions for cast-bonding are pouring temperature $690^{\circ}C$, filling speed 30 m/sec and casting pressure $800\;kg/cm^2$. The microscopic observation of cast-bonded Al/Fe-17wt%Cr steel does not show any evidence of intermetallic compounds. The bonding strength of trial products is $150-400\;kg/cm^2$ and this is stronger than conventionally cladded metal having $30-70\;kg/cm^2$.